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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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MBR3035PT - MBR3060PT — 30 A Schottky Barrier Rectif iers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR3035PT - MBR3060PT Rev. 1.8
May 2015
MBR3035PT - MBR3060PT
30 A Schottky Barrier Rectifiers
Features
Low Power Loss, High Efficiency
High Surge Capacity
Metal Silicon Junction, Majority Carrier Conduction
High Current Capacity, Low Forward Voltage Drop
Guard Ring for Over-V oltage Protection (OVP)
Applications
Low-Voltage
High-Frequency Inverters
Free Wheeling
Polarity Prot e cti on
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Marking Package Packing Method
MBR3035PT MBR3035PT
TO-247 3L Rail
MBR3045PT MBR3045PT
MBR3050PT MBR3050PT
MBR3060PT MBR3060PT
Symbol Parameter Value Unit
MBR
3035PT MBR
3045PT MBR
3050PT MBR
3060PT
VRRM Maximum Repetitive Reverse Voltage 35 45 50 60 V
IF(AV) Average Rectified Forward Current
.375-inch Lead Length 30 A
IFSM Non-Repetitive Peak Forward Surge
Current: 8.3 ms Single Half-Sine Wave 200 A
TSTG Storage Temperature Ra nge -65 to +175 °C
TJOperating Junction Temperature Ran ge -65 to +150 °C
Description
This center-tap Schottky rectifier is optimal for secondary
rectification and free-wheeling applications for high-effi-
ciency DC-DC convertor de sign, which fe atures very low
forward voltage drop and low leakage current.
TO-3P/TO-247AD
123
+
PIN1
PIN3 CASE
PIN2
MBR3035PT - MBR3060PT — 30 A Schottky Barrier Rectif iers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR3035PT - MBR3060PT Rev. 1.8 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
PDPower Dissipation 3.0 W
RθJC Thermal Resistance, Junction to Case 1.4 °C/W
Symbol Parameter Value Unit
MBR
3035PT MBR
3045PT MBR
3050PT MBR
3060PT
VFMaximum Forward Voltage,
per Leg
IF = 20 A, TC = 25°C0.75
V
IF = 20 A, TC = 125°C 0.60 0.65
IF = 30 A, TC = 25°C0.76
IF = 30 A, TC = 125°C0.72
IRMaximum Reverse Current
at Rated VRRM, per Leg TA = 25°C0.15.0
mA
TA = 125°C 60.0 100.0
IRRM Peak Repetitive Reverse Surge Current, per Le g
2.0 μs Pulse Width, f = 1.0 kHz 1.0 0.5 A
MBR3035PT - MBR3060PT — 30 A Schottky Barrier Rectif iers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR3035PT - MBR3060PT Rev. 1.8 3
Typical Performance Characteristics
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs. Reverse Voltage
Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics
0 25 50 75 100 125 150 175
0
6
12
18
24
30
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.00mm) LOAD
LENGTHS
MBR3035PT-MBR3045PT
MBR3050PT-MBR3060PT
12 51020 50100
0
50
100
150
200
250
300
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
0 0.2 0.4 0.6 0.8 1 1.2
0.01
0.1
1
10
50
Forward Voltage, VF [V]
Forward Current, IF [A]
Pulse Width = 300μ
μμ
μS
2% Duty Cycle
T = 25 C
º
A
T = 150 C
º
A
MBR3035PT-MBR3045PT
MBR3050PT-MBR3060PT
0 20406080100120140
0.001
0.01
0.1
1
10
50
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C º
A
T = 75 C
º
A
T = 125 C
º
A
MBR3035PT-MBR3045PT
MBR3050PT-MBR3060PT
MBR3050PT-MBR3060PT
MBR3035PT-MBR3045PT
0.01 0.1 1 10 100
0.1
1
10
100
Pulse Duration [s]
Transient Thermal Impedance [ºC/W]
MBR3035PT - MBR3060PT — 30 A Schottky Barrier Rectif iers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR3035PT - MBR3060PT Rev. 1.8 4
Physical Dimensions
Figure 7. TO-247, MOLDED, 3 LEADS, JEDEC OPTION AD
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I74
®
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1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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