DATA SHEET MICRONAS Edition April 23, 2004 6251-345-2DS HAL300 Differential Hall Effect Sensor IC MICRONAS HAL300 DATA SHEET Contents Page Section Title 3 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.2.1. 1.3. 1.4. 1.5. 1.6. Introduction Features Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability Pin Connections 5 2. Functional Description 6 6 11 11 11 11 12 13 14 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics 19 19 19 19 20 4. 4.1. 4.2. 4.3. 4.4. Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC and ESD 22 5. Data Sheet History 2 Micronas HAL300 DATA SHEET Differential Hall Effect Sensor IC in CMOS technology 1.1. Features: Release Notes: Revision bars indicate significant changes to the previous edition. - operates from 4.5 V to 24 V supply voltage 1. Introduction - overvoltage protection The HAL 300 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperaturecompensated Hall plates (2.05 mm apart) with active offset compensation, a differential amplifier with a Schmitt trigger, and an open-drain output transistor (see Fig. 2-1). The HAL 300 is a differential sensor which responds to spatial differences of the magnetic field. The Hall voltages at the two Hall plates, S1 and S2, are amplified with a differential amplifier. The differential signal is compared with the actual switching level of the internal Schmitt trigger. Accordingly, the output transistor is switched on or off. The sensor has a bipolar switching behavior and requires positive and negative values of B = BS1 - BS2 for correct operation. The HAL 300 is an ideal sensor for applications with a rotating multi-pole-ring in front of the branded side of the package (see Fig. 3-1, Fig. 3-2 and Fig. 3-3), such as ignition timing and revolution counting. - distance between Hall plates: 2.05 mm - switching offset compensation at 62 kHz - reverse-voltage protection at VDD-pin - short-circuit protected open-drain output by thermal shutdown - operates with magnetic fields from DC to 10 kHz - output turns low with magnetic south pole on branded side of package and with a higher magnetic flux density in sensitive area S1 as in S2 - on-chip temperature compensation circuitry minimizes shifts of the magnetic parameters over temperature and supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of hysteresis - EMC corresponding to ISO 7637 1.2. Marking Code Type Temperature Range A For applications in which a magnet is mounted on the back side of the package (back-biased applications), the HAL320 is recommended. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature. The sensor is designed for industrial and automotive applications and operates with supply voltages from 4.5 V to 24 V in the ambient temperature range from -40 C up to 150 C. The HAL 300 is available in the SMD-package SOT89B-2 and in the leaded versions TO92UA-3 and TO92UA-4. HAL300 300A K 300K 1.2.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. 1.3. Operating Junction Temperature Range (TJ) A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C The relationship between ambient temperature (TA) and junction temperature (TJ) is explained in section 4.1. on page 19. Micronas 3 HAL300 DATA SHEET 1.4. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A or K Package: SF for SOT89B-2, UA for TO92UA Type: 300 Example: HAL300UA-K Type: 300 Package: TO92UA Temperature Range: TJ = -40 C to +140 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling". 1.5. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. 1.6. Pin Connections VDD 1 3 OUT 2 GND Fig. 1-1: Pin configuration 4 Micronas HAL300 DATA SHEET HAL300 2. Functional Description This Hall effect sensor is a monolithic integrated circuit with 2 Hall plates 2.05 mm apart that switches in response to differential magnetic fields. If magnetic fields with flux lines perpendicular to the sensitive areas are applied to the sensor, the biased Hall plates force Hall voltages proportional to these fields. The difference of the Hall voltages is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the differential magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The builtin hysteresis eliminates oscillation and provides switching behavior of the output without oscillation. Magnetic offset caused by mechanical stress at the Hall plates is compensated for by using the "switching offset compensation technique": An internal oscillator provides a two phase clock (see Fig. 2-2). The difference of the Hall voltages is sampled at the end of the first phase. At the end of the second phase, both sampled differential Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The amount of time that elapses from crossing the magnetic switch level to the actual switching of the output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to -15 V. VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hall Plate S1 Short Circuit & Overvoltage Protection Hysteresis Control Comparator Switch OUT Output 3 Hall Plate S2 Clock GND 2 Fig. 2-1: HAL300 block diagram fosc t DB DBON t VOUT VOH VOL t IDD 1/fosc = 16 s tf t Fig. 2-2: Timing diagram Micronas 5 HAL300 DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3-1: SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas Weight approximately 0.039 g 6 Micronas DATA SHEET HAL300 Fig. 3-2: TO92UA-4: Plastic Transistor Standard UA package, 3 leads, not spread, with two sensitive areas Weight approximately 0.105 g Micronas 7 HAL300 DATA SHEET Fig. 3-3: TO92UA-3: Plastic Transistor Standard UA package, 3 leads, spread, with two sensitive areas Weight approximately 0.105 g 8 Micronas DATA SHEET HAL300 Fig. 3-4: TO92UA-4: Dimensions ammopack inline, not spread Micronas 9 HAL300 DATA SHEET Fig. 3-5: TO92UA-3: Dimensions ammopack inline, spread 10 Micronas HAL300 DATA SHEET 3.2. Dimensions of Sensitive Area 0.08 mm x 0.17 mm 3.3. Positions of Sensitive Areas (nominal values) SOT89B-2 TO92UA-3/-4 x1 = -1.025 mm x2 = 1.025 mm x1 - x2 = 2.05 mm y = 0.95 mm y = 1.0 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Limit Values Min. Max. Unit VDD Supply Voltage 1 -15 281) V VO Output Voltage 3 -0.3 281) V IO Continuous Output On Current 3 - 30 mA TJ Junction Temperature Range -40 -40 150 1702) C 1) as long as 2) t < 1000h TJmax is not exceeded 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%. Micronas 11 HAL300 DATA SHEET 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions" of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol 12 Parameter Pin No. Limit Values Min. Max. Unit VDD Supply Voltage 1 4.5 24 V IO Continuous Output On Current 3 - 20 mA VO Output Voltage 3 - 24 V Micronas HAL300 DATA SHEET 3.6. Characteristics at TJ = -40 C to +170 C , VDD = 4.5 V to 24 V, GND = 0 V at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 12 V Symbol Parameter Pin No. Limit Values Min. Typ. Max. Unit Conditions TJ = 25 C IDD Supply Current 1 4.0 5.5 6.8 mA IDD Supply Current over Temperature Range 1 2.5 5 7.5 mA VDDZ Overvoltage Protection at Supply 1 - 28.5 32.5 V IDD = 25 mA, TJ = 25 C, t = 20 ms VOZ Overvoltage Protection at Output 3 - 28 32.5 V IOL = 25 mA, TJ = 25 C, t = 20 ms VOL Output Voltage over Temperature Range 3 - 180 400 mV IO = 20 mA IOH Output Leakage Current over Temperature Range 3 - 0.06 10 A VOH = 4.5 V... 24 V, DB < DBOFF , TJ 150 C fosc Internal Oscillator Chopper Frequency - - 62 - kHz ten(O) Enable Time of Output after Setting of VDD 3 - 35 - s VDD = 12 V, DB > DBON + 2mT or DB < DBOFF - 2mT tr Output Rise Time 3 - 80 400 ns VDD = 12 V, RL = 820 , CL = 20 pF tf Output Fall Time 3 - 45 400 ns VDD = 12 V, RL = 820 , CL = 20 pF RthJSB case SOT89B-2 Thermal Resistance Junction to Substrate Backside - 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5 mm, pad size see Fig. 3-7 RthJS case TO92UA-3, TO92UA-4 Thermal Resistance Junction to Soldering Point - 150 200 K/W Micronas 13 HAL300 DATA SHEET 3.7. Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4.5 V to 24 V Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points (Condition: -10 mT < B0 < 10 mT) Positive flux density values refer to the magnetic south pole at the branded side ot the package. B = BS1 - BS2 -40 C Parameter 25 C 140 C Min. Typ. Max. Min. Typ. Max. On point BON B > BON 0.2 1.2 2.2 0 1.2 2.2 Off point BOFF B < BOFF -2.2 -1.0 -0.2 -2.2 -1.0 0 1.2 2.2 3.0 1.2 2.2 -1.1 0.1 1.1 -1.1 0.1 Hysteresis BHYS = BON - BOFF Offset BOFFSET = (BON + BOFF)/2 Min. 170 C Typ. Max. -1.8 0.6 2.8 -2.8 -1.2 3.0 0.9 1.1 -2.2 Min. Unit Typ. Max. -2.0 0.5 3.0 mT 1.8 -3.0 -1.2 2.0 mT 1.8 3.0 0.8 1.7 3.0 mT -0.3 2.2 -2.5 -0.5 2.5 mT 5.0 Output Voltage VOH 2.0 VOL 2.0 DBOFF min DBOFF 0 DBHYS DBON DBON max B = BS1 - BS2 Fig. 3-6: Definition of switching points and hysteresis 14 1.0 Fig. 3-7: Recommended pad size SOT89B-2 Dimensions in mm Micronas HAL300 DATA SHEET mT 2.5 mT 2.5 2.0 DBON DBOFF 1.5 2.0 DBON DBOFF 1.5 DBON 1.0 DBON 1.0 TA = -40 C 0.5 VDD = 4.5 V 0.5 TA = 25 C 0.0 -0.5 VDD = 24 V -0.5 -1.0 -1.5 -2.0 -2.0 0 5 10 15 DBOFF -1.0 DBOFF -1.5 -2.5 VDD = 12 V 0.0 TA = 150 C 20 25 -2.5 -50 30 V 0 50 100 VDD 150 200 C TA Fig. 3-8: Typical magnetic switch points versus supply voltage Fig. 3-10: Typical magnetic switch points versus ambient temperature mT 2.5 mA 25 2.0 DBON DBOFF 1.5 20 DBON TA = -40 C IDD TA = 25 C 15 1.0 TA = 150 C 10 0.5 TA = -40 C TA = 25 C 0.0 5 TA = 150 C -0.5 0 DBOFF -1.0 -5 -1.5 -10 -2.0 -2.5 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 3-9: Typical magnetic switch points versus supply voltage Micronas -15 -15 -10 -5 0 5 10 15 20 25 30 V VDD Fig. 3-11: Typical supply current versus supply voltage 15 HAL300 DATA SHEET mV 500 mA 7 IO = 20 mA TA = -40 C 6 IDD VOL 400 TA = 25 C 5 TA = 150 C 300 TA = 150 C 4 3 TA = 25 C 200 TA = -40 C 2 100 1 0 1 2 3 4 5 6 7 8 V 0 0 5 10 15 20 25 30 V VDD VDD Fig. 3-12: Typical supply current versus supply voltage Fig. 3-14: Typical output low voltage versus supply voltage mA 7 mV 500 IO = 20 mA 6 IDD VOL 400 VDD = 24 V 5 VDD = 4.5 V VDD = 12 V 300 4 VDD = 24 V VDD = 4.5 V 3 200 2 100 1 0 -50 0 50 100 150 TA Fig. 3-13: Typical supply current versus ambient temperature 16 200 C 0 -50 0 50 100 150 200 C TA Fig. 3-15: Typical output low voltage versus ambient temperature Micronas HAL300 DATA SHEET kHz 70 kHz 70 TA = 25 C 60 VDD = 12 V 60 fosc fosc 50 50 40 40 30 30 20 20 10 10 0 0 5 10 15 20 25 0 -50 30 V 0 50 100 Fig. 3-16: Typical internal chopper frequency versus supply voltage Fig. 3-18: Typical internal chopper frequency versus ambient temperature A 2 10 kHz 70 TA = 25 C 60 fosc IOH 1 10 50 0 10 40 -1 10 30 -2 10 20 -3 10 10 -4 10 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 3-17: Typical internal chopper frequency versus supply voltage Micronas 200 C TA VDD 0 150 -5 10 -50 VOH = 24 V VDD = 5 V 0 50 100 150 200 C TA Fig. 3-19: Typical output leakage current versus ambient temperature 17 HAL300 A 2 10 IOH DATA SHEET VDD = 5 V 1 10 0 10 TA = 125 C -1 10 -2 10 TA = 75 C -3 10 -4 10 -5 10 20 TA = 25 C 22 24 26 28 30 V VOH Fig. 3-20: Typical output leakage current versus output voltage 18 Micronas HAL300 DATA SHEET 4. Application Notes 4.2. Extended Operating Conditions Mechanical stress can change the sensitivity of the Hall plates and an offset of the magnetic switching points may result. External mechanical stress to the package can influence the magnetic parameters if the sensor is used under back-biased applications. This piezo sensitivity of the sensor IC cannot be completely compensated for by the switching offset compensation technique. All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 12). For back-biased applications, the HAL 320 is recommended. In such cases, please contact our Application Department. They will provide assistance in avoiding applications which may induce stress to the ICs. This stress may cause drifts of the magnetic parameters indicated in this data sheet. Supply Voltage Below 4.5 V Typically, the sensors operate with supply voltages above 3 V, however, below 4.5 V some characteristics may be outside the specification. Note: The functionality of the sensor below 4.5 V is not tested on a regular base. For special test conditions, please contact Micronas. 4.1. Ambient Temperature 4.3. Start-up Behavior Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 13). TJ = TA + T Under static conditions and continuous operation, the following equation applies: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. TAmax = TJmax - T WARNING: DO NOT USE THESE SENSORS IN LIFESUPPORTING SYSTEMS, AVIATION, AND AEROSPACE APPLICATIONS! Micronas 19 HAL300 4.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 4-1). For automotive applications, a 220 W series resistor to pin 1 is recommended. Because of the IDD peak at 4.1 V, the series resistor should not be greater than 270 . The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. DATA SHEET RV 220 1 VEMC VP OUT 3 4.7 nF 20 pF 2 Applications with this arrangement passed the EMC tests according to the product standard ISO 7637. 1.2 k RL VDD GND Fig. 4-1: Test circuit for EMC investigations Please contact Micronas for the detailed investigation reports with the EMC and ESD results. 20 Micronas DATA SHEET Micronas HAL300 21 HAL300 DATA SHEET 5. Data Sheet History 1. Final data sheet: "HAL 300 Differential Hall Effect Sensor IC", July 15, 1998, 6251-345-1DS. First release of the final data sheet. 2. Final data sheet: "HAL 300 Differential Hall Effect Sensor IC", April 23, 2004, 6251-345-2DS. Second release of the final data sheet. Major changes: - temperature range "C" removed - additional temperature range "K" - new package diagrams for SOT89-2 and TO92UA-4 - package diagram for TO92UA-3 added - ammopack diagrams for TO92UA-3/-4 added Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-345-2DS 22 All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. Micronas