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GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
MDS170L
170 Watts, 36 Volts, Pulsed
Avionics 1030/1090 MHz
GENERAL DESCRIPTION
The MDS170L is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030 - 1090 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
high est MTTF. Low thermal resistance Sol der Sealed Package red uces
junction temperature, extends life.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 350 Watts
o2
Maximum Voltage and Current
BVces Collector to Base Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 15 Amps
Maximu m Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1030 - 1090 MHz
Vcc = 36 Volts
PW = Note 1
DF = Note 1
F = 1030 MHz
170
740
34
10:1
Watts
Watts
dB
%
BVebo
BVces
hFE
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdo wn
DC - Current Gain
Thermal Resistance
Ie = 20 mA
Ic = 20 mA
Ic = 20 mA, Vce = 5 V 20 0.5
Volts
Volts
C/W
o
Note 1: MODE- S Pulse Burst, 120 µs at 50% Duty, Long term duty = 5%.
2: At rated pulse conditions
Initial Issue January, 1996
MDS170L
