UNISONIC TECHNOLOGIES CO., LTD
MMBTA56 PNP SILICON TRANSISTOR
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Copyright © 2005 Unisonic Technologies Co., Ltd QW-R206-090,B
AMPLIFIER TRANSISTOR
FEATURES
* Collector-Emitter Voltage: VCEO=-80V
* Collector Dissipation: PD=350mW
SOT-23
1
2
3
ORDERING INFORMATION
Ordering Number Pin Assignment
Lead Free Halogen Free Package 1 2 3 Packing
MMBTA56L-AE3-R MMBTA56G-AE3-R SOT-23 E B C Tape Reel
MARKING
MMBTA56 PNP SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -80 V
Emitter-Base Voltage VEBO -4 V
Collector Current - Continuous IC -500 mA
Total Device Dissipation(Note 1)
Derate Above 25℃ PD 350
2.8
mW
mW/℃
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note 1. Device mounted on FR-4=1.6×1.6×0.06 in
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL MAX UNIT
Thermal Resistance, Junction to Ambient θJA 357 ℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note 1) BVCEO IC=-1.0mA, IB=0 -80 V
Emitter-Base Breakdown Voltage BVEBO IE=-100μA, Ic=0 -4 V
Collector Cutoff Current ICES V
CE=-60V, IB=0 -0.1 μA
Collector Cutoff Current ICBO V
CB=-80V, IE=0 -0.1 μA
ON CHARACTERISTICS
DC Current Gain hFE IC=-10mA, VCE=-1V
IC=-100mA, VCE=-1V
100
100
Collector-Emitter Saturation Voltage VCE(SAT) IC=-100mA, IB=-10mA -0.25 V
Base-Emitter on Voltage VBE(ON) IC=-100mA, VCE=-1V -1.2 V
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(Note2) fT IC=-10mA, VCE=-2V,
f=100MHz 100 MHz
Note 1: Pulse test: PW≤300μs, Duty Cycle≤2%
2: f
T is defined as the frequency at which IhfeI extrapolates to unity.
MMBTA56 PNP SILICON TRANSISTOR
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SWITCHING TIME TEST CIRCUITS
MMBTA56 PNP SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
Current-Gain Bandwidth
Product, fT(MHz)
Capacitance, C (pF)
Time, t (ns)
-5.0
10
-7.0 -20 -30-50 -100-200-300-500
20
30
70
300
1.0K
Switching Time
50
500
tf
-10 -70
Collector Current, IC (mA)
100
200
700
ts
tr
VCC=-40V
IC/IB=10
IB1=IB2
TJ=25℃td@VBE(off)=-0.5V
Collector-Emitter Voltage, VCE (V)
Collector Current, IC (mA)
-700
-1.0 -5.0 -20
Active-Region Safe Operating Area
TA=25℃
Current Limit
Thermal Limit
Second Breakdown Limit
MMBTA55
MMBTA56
TC=25℃
1.0ms
100µs
-2.0-3.0 -7.0-10 -30 -50-70-100
-10
-20
-30
-50
-70
-100
-200
-300
-500
-1.0K
1.0s
DC Current Gain, hFE
Voltage, V
MMBTA56 PNP SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
Collector-Emitter Voltage, VCE (V)
Temperature Coefficient, RθVB (mV/℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
