SKiM 300GD063D Absolute Maximum Ratings Symbol Conditions IGBT = )8 0.-2 > = )8 0.-2 > = / @ B 0"2 SKiM 4 Units #-)7- 0/5-2 75- 0+#-2 A ) 7- 666 C /8- 0/)82 ( ( > > )8-- )77 0/582 75- 0+#-2 ( ( )F-- ( ( / 6 Inverse diode D IGBT Modules SKiM 300GD063D Preliminary Data D@ = @ Features ! ! " # $ % & ' (!)*+ , ,, #-.)/++ 0 , 12 ! +3.4 +) , #56/ 0! 2 7-4/)848# Typical Applications 9 /-- :;< , " ! !, ):;< = )8 0.-2 > = )8 0.-2 > = / = /- E 6E B = /8- > D@ = )8 > ! , Characteristics Symbol Conditions IGBT = E = 5 ( = -E = E B = )8 > B = )8 > B = )8 02 > 02 Values $6 " ! (R) = )8> ! , * = )-- (E min. typ. 78 88 max. #8 -+ - F 0- 52 ) F 0+ F2 = /8 / 8 0/ #2 Units ( G /. )- D D D ; B = )8 0/)82 > !! H 9ICI ! = )8 0/)82 > ,02 ,02 = +-- = +-- ( 9 = 9 = 5 G B = /)8 > 02 02 = -E = )8 E = / @;< = -E = )8 E = / @;< = -E = )8 E = / @;< )+ )8 /8 A /8 / 8 0/ #2 G /+.8 .-8- /# 8 0/7 82 J 3; #E B = > = E J =( Inverse diode D = L D = )-- (E = - E B = )8 0/)82 > B = )8 0/)82 > B = )8 0/)82 > D = +-- (E B = /)8 > = - , 4, = +.-- (4M 9 * 99@ =9 =5G / )8 0/ )2 /7 0- 582 0/ #2 ))8 +- 0- F2 0) .82 K ( M 8 J Thermal characteristics 90B2 90B2 DN% -) 34N - )58 34N Temperature Sensor 9 = )8 0/--2 > / 0/ #.2 :G ! = )8 0/--2 > + 0)2 O Mechanical data @/ @) : 0@82 ! 0@#2 ) 7 + 8 +/- " GD 1 19-03-2004 SCT (c) by SEMIKRON SKiM 300GD063D Fig. 1 Output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG) Fig. 5 Transfer characteristic Fig. 6 Gate charge characteristic 2 19-03-2004 SCT (c) by SEMIKRON SKiM 300GD063D Fig. 7 Switching times vs. IC Fig. 8 Switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zth(j-s) = f (tp); D = tp/tc = tp * f Zth(j-s) = f (tp); D = tp/tc = tp * f Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE' Fig. 12 CAL diode peak reverse recovery current 3 19-03-2004 SCT (c) by SEMIKRON SKiM 300GD063D Fig. 13 Typ. CAL diode recovered charge Dimensions in mm % % % This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 19-03-2004 SCT (c) by SEMIKRON