PESD5Z7.0,115 - NXP Semiconductors / Philips Semiconductors

1. Product proﬁle

1.1 General description

Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in a

SOD523 (SC-79) ultra small and ﬂat lead Surface-Mounted Device (SMD) plastic package

designed to protect one signal line from the damage caused by ESD and other transients.

1.2 Features

1.3 Applications

PESD5Zx series

Low capacitance unidirectional ESD protection diodes

Rev. 02 — 4 April 2008 Product data sheet

Table 1. Product overview

Type number Package Conﬁguration

NXP JEITA

PESD5Z2.5 SOD523 SC-79 single

PESD5Z3.3

PESD5Z5.0

PESD5Z6.0

PESD5Z7.0

PESD5Z12

nESD protection of one line nLow leakage current: IRM <1nA

nLow diode capacitance nESD protection up to 30 kV

nMax. peak pulse power: PPP = 260 W nIEC 61000-4-2; level 4 (ESD)

nLow clamping voltage: VCL =15V nIEC 61000-4-5 (surge); IPP =20A

nComputers and peripherals nPortable electronics

nAudio and video equipment nSubscriber Identity Module (SIM) card

protection

nCellular handsets and accessories nFireWire

n10/100/1000 Mbit/s Ethernet nHigh-speed data lines

nCommunication systems

Product data sheet Rev. 02 — 4 April 2008 2 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

1.4 Quick reference data

2. Pinning information

[1] The marking bar indicates the cathode.

3. Ordering information

Table 2. Quick reference data

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage

PESD5Z2.5 - - 2.5 V

PESD5Z3.3 - - 3.3 V

PESD5Z5.0 - - 5.0 V

PESD5Z6.0 - - 6.0 V

PESD5Z7.0 - - 7.0 V

PESD5Z12 - - 12.0 V

Cddiode capacitance f = 1 MHz; VR=0V

PESD5Z2.5 - 229 300 pF

PESD5Z3.3 - 172 200 pF

PESD5Z5.0 - 89 150 pF

PESD5Z6.0 - 78 150 pF

PESD5Z7.0 - 69 150 pF

PESD5Z12 - 35 75 pF

Table 3. Pinning

Pin Description Simpliﬁed outline Symbol

1 cathode [1]

2 anode 21

006aaa152

Table 4. Ordering information

Type number Package

Name Description Version

PESD5Z2.5 SC-79 plastic surface-mounted package; 2 leads SOD523

PESD5Z3.3

PESD5Z5.0

PESD5Z6.0

PESD5Z7.0

PESD5Z12

Product data sheet Rev. 02 — 4 April 2008 3 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

4. Marking

5. Limiting values

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1 to 2.

Table 5. Marking codes

Type number Marking code

PESD5Z2.5 N7

PESD5Z3.3 N8

PESD5Z5.0 N9

PESD5Z6.0 NA

PESD5Z7.0 NB

PESD5Z12 NC

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

PPP peak pulse power tp= 8/20 µs[1][2]

PESD5Z2.5 - 260 W

PESD5Z3.3 - 260 W

PESD5Z5.0 - 180 W

PESD5Z6.0 - 180 W

PESD5Z7.0 - 180 W

PESD5Z12 - 200 W

IPP peak pulse current tp= 8/20 µs[1][2]

PESD5Z2.5 - 20 A

PESD5Z3.3 - 20 A

PESD5Z5.0 - 10 A

PESD5Z6.0 - 10 A

PESD5Z7.0 - 10 A

PESD5Z12 - 6 A

Per device

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Product data sheet Rev. 02 — 4 April 2008 4 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

[1] Device stressed with ten non-repetitive ESD pulses.

[2] Measured from pin 1 to 2.

Table 7. ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

Per diode

VESD electrostatic discharge voltage

PESD5Zx series IEC 61000-4-2

(contact discharge) [1][2] -30kV

machine model - 400 V

MIL-STD-883 (human

body model) -10kV

Table 8. ESD standards compliance

Standard Conditions

Per diode

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model) > 4 kV

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (µs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 µs

50 % IPP; 20 µs

001aaa631

IPP

100 %

90 %

30 ns 60 ns

10 %

tr = 0.7 ns to 1 ns

Product data sheet Rev. 02 — 4 April 2008 5 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

6. Characteristics

Table 9. Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage

PESD5Z2.5 - - 2.5 V

PESD5Z3.3 - - 3.3 V

PESD5Z5.0 - - 5.0 V

PESD5Z6.0 - - 6.0 V

PESD5Z7.0 - - 7.0 V

PESD5Z12 - - 12.0 V

IRM reverse leakage current

PESD5Z2.5 VRWM = 2.5 V - 0.5 6 µA

PESD5Z3.3 VRWM = 3.3 V - 8 50 nA

PESD5Z5.0 VRWM = 5.0 V - 5 50 nA

PESD5Z6.0 VRWM = 6.0 V - 2 10 nA

PESD5Z7.0 VRWM = 7.0 V - < 1 10 nA

PESD5Z12 VRWM = 12.0 V - < 1 10 nA

VBR breakdown voltage IR=1mA

PESD5Z2.5 4 - - V

PESD5Z3.3 5 - - V

PESD5Z5.0 6.2 - - V

PESD5Z6.0 6.8 - - V

PESD5Z7.0 7.5 - - V

PESD5Z12 14.1 - - V

Cddiode capacitance f = 1 MHz; VR=0V

PESD5Z2.5 - 229 300 pF

PESD5Z3.3 - 172 200 pF

PESD5Z5.0 - 89 150 pF

PESD5Z6.0 - 78 150 pF

PESD5Z7.0 - 69 150 pF

PESD5Z12 - 35 75 pF

VCL clamping voltage IPP =5A [1][2]

PESD5Z2.5 - 8 9 V

PESD5Z3.3 - 8 10 V

PESD5Z5.0 - 12 13 V

PESD5Z6.0 - 12 13 V

PESD5Z7.0 - 14 15 V

PESD5Z12 - 27 30 V

Product data sheet Rev. 02 — 4 April 2008 6 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1 to 2.

VCL clamping voltage [1][2]

PESD5Z2.5 IPP =20A --15V

PESD5Z3.3 IPP =20A --18V

PESD5Z5.0 IPP =10A --18V

PESD5Z6.0 IPP =10A --18V

PESD5Z7.0 IPP =10A --19V

PESD5Z12 IPP =6A --35V

rdif differential resistance IR=5mA

PESD5Z2.5 - - 60 Ω

PESD5Z3.3 - - 10 Ω

PESD5Z5.0 - - 15 Ω

PESD5Z6.0 - - 15 Ω

PESD5Z7.0 - - 15 Ω

PESD5Z12 - - 40 Ω

Table 9. Characteristics

…continued

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Tamb =25°C

(1) PESD5Z2.5; PESD5Z3.3

(2) PESD5Z5.0; PESD5Z6.0; PESD5Z7.0; PESD5Z12

Fig 3. Peak pulse power as a function of exponential

pulse duration; typical values Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

006aab056

tp (µs)

110

103

10 102

102

103

104

PPP

(W)

(1)

(2)

Tj (°C)

0 20015050 100

001aaa193

0.4

0.8

1.2

PPP

PPP(25°C)

Product data sheet Rev. 02 — 4 April 2008 7 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

f = 1 MHz; Tamb =25°C

(1) PESD5Z2.5

(2) PESD5Z3.3

(3) PESD5Z5.0

f = 1 MHz; Tamb =25°C

(1) PESD5Z6.0

(2) PESD5Z7.0

(3) PESD5Z12

Fig 5. Diode capacitance as a function of reverse

voltage; typical values Fig 6. Diode capacitance as a function of reverse

voltage; typical values

PESD5Z2.5; VRWM = 2.5 V

PESD5Z3.3; VRWM = 3.3 V

IR is less than 50 nA at 150 °C for:

PESD5Z5.0; VRWM = 5.0 V

PESD5Z6.0; VRWM = 6.0 V

PESD5Z7.0; VRWM = 7.0 V

PESD5Z12; VRWM = 12.0 V

Fig 7. Relative variation of reverse current as a

function of junction temperature; typical values Fig 8. V-I characteristics for a unidirectional

ESD protection diode

VR (V)

054231

006aab057

100

150

200

250

(pF)

(1)

(2)

(3)

006aab058

VR (V)

01284

100

(pF)

(1)

(2)

(3)

006aab059

IR(25°C)

10−1

Tj (°C)

−100 150100050−50

006aaa407

−VCL −VBR −VRWM −IRM

−IR

−IPP

P-N

−+

Product data sheet Rev. 02 — 4 April 2008 8 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

Fig 9. ESD clamping test setup and waveforms for PESD5Z2.5

006aab060

50 Ω

CZDUT

(DEVICE

UNDER

TEST)

GND

450 ΩRG 223/U

50 Ω coax

ESD TESTER

acc. to IEC 61000-4-2

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

GND

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 10 A/div

horizontal scale = 15 ns/div

vertical scale = 20 V/div

horizontal scale = 100 ns/div

GND

unclamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 10 A/div

horizontal scale = 15 ns/div

GND

clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 20 V/div

horizontal scale = 100 ns/div

Product data sheet Rev. 02 — 4 April 2008 9 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

Fig 10. PESD5Z3.3: Clamped +8 kV ESD pulse

waveform (IEC 61000-4-2 network) Fig 11. PESD5Z3.3: Clamped −8 kV ESD pulse

waveform (IEC 61000-4-2 network)

Fig 12. PESD5Z5.0: Clamped +8 kV ESD pulse

waveform (IEC 61000-4-2 network) Fig 13. PESD5Z5.0: Clamped −8 kV ESD pulse

waveform (IEC 61000-4-2 network)

006aab061

vertical scale = 20 V/div

horizontal scale = 100 ns/div

GND

006aab062

vertical scale = 20 V/div

horizontal scale = 100 ns/div

GND

006aab063

vertical scale = 20 V/div

horizontal scale = 100 ns/div

GND

006aab064

vertical scale = 20 V/div

horizontal scale = 100 ns/div

GND

Product data sheet Rev. 02 — 4 April 2008 10 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

Fig 14. PESD5Z6.0: Clamped +8 kV ESD pulse

waveform (IEC 61000-4-2 network) Fig 15. PESD5Z6.0: Clamped −8 kV ESD pulse

waveform (IEC 61000-4-2 network)

Fig 16. PESD5Z7.0: Clamped +8 kV ESD pulse

waveform (IEC 61000-4-2 network) Fig 17. PESD5Z7.0: Clamped −8 kV ESD pulse

waveform (IEC 61000-4-2 network)

006aab065

vertical scale = 20 V/div

horizontal scale = 100 ns/div

GND

006aab066

vertical scale = 20 V/div

horizontal scale = 100 ns/div

GND

006aab067

vertical scale = 20 V/div

horizontal scale = 100 ns/div

GND

006aab068

vertical scale = 20 V/div

horizontal scale = 100 ns/div

GND

Product data sheet Rev. 02 — 4 April 2008 11 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

Fig 18. PESD5Z12: Clamped +8 kV ESD pulse

waveform (IEC 61000-4-2 network) Fig 19. PESD5Z12: Clamped −8 kV ESD pulse

waveform (IEC 61000-4-2 network)

006aab069

vertical scale = 20 V/div

horizontal scale = 100 ns/div

GND

006aab070

vertical scale = 20 V/div

horizontal scale = 100 ns/div

GND

Product data sheet Rev. 02 — 4 April 2008 12 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

7. Application information

The PESD5Zx series is designed for the protection of one unidirectional data or signal line

from the damage caused by ESD and surge pulses. The device may be used on lines

where the signal polarities are either positive or negative with respect to ground. The

PESD5Zx series provides a surge capability of 260 W per line for an 8/20 µs waveform.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the PESD5Zx as close to the input terminal or connector as possible.

2. The path length between the PESD5Zx and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

vias.

Fig 20. Application diagram

006aab071

ground

line to be protected

(positive signal polarity)

PESD5Zx

unidirectional protection of one line

ground

line to be protected

(negative signal polarity)

PESD5Zx

Product data sheet Rev. 02 — 4 April 2008 13 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

8. Package outline

9. Packing information

[1] For further information and the availability of packing methods, see Section 13.

Fig 21. Package outline SOD523 (SC-79)

02-12-13Dimensions in mm

1.65

1.55 1.25

1.15

0.17

0.11

0.34

0.26

0.65

0.58

0.85

0.75

Table 10. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 8000 10000

PESD5Z2.5 SOD523 2 mm pitch, 8 mm tape and reel - -315 -

4 mm pitch, 8 mm tape and reel -115 - -135

PESD5Z3.3 SOD523 2 mm pitch, 8 mm tape and reel - -315 -

4 mm pitch, 8 mm tape and reel -115 - -135

PESD5Z5.0 SOD523 2 mm pitch, 8 mm tape and reel - -315 -

4 mm pitch, 8 mm tape and reel -115 - -135

PESD5Z6.0 SOD523 2 mm pitch, 8 mm tape and reel - -315 -

4 mm pitch, 8 mm tape and reel -115 - -135

PESD5Z7.0 SOD523 2 mm pitch, 8 mm tape and reel - -315 -

4 mm pitch, 8 mm tape and reel -115 - -135

PESD5Z12 SOD523 2 mm pitch, 8 mm tape and reel - -315 -

4 mm pitch, 8 mm tape and reel -115 - -135

Product data sheet Rev. 02 — 4 April 2008 14 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

10. Soldering

Reﬂow soldering is the only recommended soldering method.

Dimensions in mm

Fig 22. Reﬂow soldering footprint SOD523 (SC-79)

mgs343

1.80

1.90

0.30

0.40

0.50

1.20 0.60

2.15

solder lands

solder resist

occupied area

solder paste

Product data sheet Rev. 02 — 4 April 2008 15 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD5ZX_SER_2 20080404 Product data sheet - PESD5ZX_SER_1

Modiﬁcations: •Table 10: Type number updated to PESD5Z12

PESD5ZX_SER_1 20070813 Product data sheet - -

Product data sheet Rev. 02 — 4 April 2008 16 of 17

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors PESD5Zx series

Low capacitance unidirectional ESD protection diodes

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 4 April 2008

Document identifier: PESD5ZX_SER_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Application information. . . . . . . . . . . . . . . . . . 12

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13

9 Packing information. . . . . . . . . . . . . . . . . . . . . 13

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13 Contact information. . . . . . . . . . . . . . . . . . . . . 16

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17