AP4509GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D2 D1 D2 D1 D1 D1 Low On-resistance Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 30V RDS(ON) 14m ID S1 G2 S2G2 G1S2 S1 G1 10A P-CH BVDSS Description -30V RDS(ON) 20m ID -8.4A Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D2 D1 The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Units P-channel 30 -30 V +20 +20 V 3 10 -8.4 A 3 7.9 -6.7 A 30 -30 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation 2.0 Linear Derating Factor 0.016 W W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 /W 1 201204033 AP4509GM N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance VGS=0V, ID=250uA 2 Min. Typ. Max. Units 30 - - V VGS=10V, ID=9A - - 14 m VGS=4.5V, ID=5A - - 20 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=9A - 14 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V - - 100 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=9A - 23 65 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 14 - nC VDS=15V - 14 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 10 - ns td(off) Turn-off Delay Time RG=3.3 - 36 - ns tf Fall Time VGS=10V - 17 - ns Ciss Input Capacitance VGS=0V - 1770 2830 pF Coss Output Capacitance VDS=25V - 430 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 350 - pF Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Min. Typ. Max. Units IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=9A, VGS=0V - 31 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 25 - nC 2 AP4509GM P-CH Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. -30 - - V VGS=-10V, ID=-8A - - 20 m VGS=-4.5V, ID=-4A - - 30 m VGS=0V, ID=-250uA 2 Static Drain-Source On-Resistance Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-8A - 14 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -10 uA Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -100 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=-8A - 27 45 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 18 - nC VDS=-15V - 16 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 11 - ns td(off) Turn-off Delay Time RG=3.3 - 40 - ns tf Fall Time VGS=-10V - 25 - ns Ciss Input Capacitance VGS=0V - 1580 2530 pF Coss Output Capacitance VDS=-25V - 540 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 450 - pF Min. Typ. IS=-1.7A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-8A, VGS=0V - 40 - ns Qrr Reverse Recovery Charge dI/dt=-100A/s - 32 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4509GM N-Channel 160 140 T A = 25 o C 10V 7.0V 120 100 80 5.0V 60 4.5V T A = 150 o C 120 ID , Drain Current (A) ID , Drain Current (A) 140 10V 7.0V 100 80 60 5.0V 40 4.5V 40 20 20 V G =3.0V V G =3.0V 0 0 0 1 2 3 0 4 1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3 4 Fig 2. Typical Output Characteristics 18 1.6 ID=9A V G =10V ID=5A T A =25 o C 1.4 Normalized RDS(ON) RDS(ON) (m ) 2 V DS , Drain-to-Source Voltage (V) 15 12 1.2 1.0 0.8 9 0.6 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 10 VGS(th) (V) 8 IS(A) 6 T j =150 o C T j =25 o C 2.0 4 1.5 2 0 1.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4509GM N-Channel f=1.0MHz 10000 I D =9A V DS =24V 10 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 C iss 1000 4 C oss C rss 2 0 100 0 10 20 30 40 50 1 5 9 Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 10 1ms 10ms 1 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.01 Normalized Thermal Response (Rthja) 1 100us ID (A) 13 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135o C/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 5 AP4509GM P-Channel 120 160 -10V o T A = 25 C 140 -10V T A = 150 o C 120 -ID , Drain Current (A) -ID , Drain Current (A) 100 -7.0V 100 80 -5.0V -4.5V 60 -7.0V 80 -5.0V 60 -4.5V 40 40 20 V G =-3.0V 20 0 V G =-3.0V 0 0 1 2 3 4 5 6 7 0 1 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3 4 5 6 Fig 2. Typical Output Characteristics 33 1.6 I D =- 8 A V G =-10V ID=-4A 30 T A =25 o C Normalized RDS(ON) 1.4 27 RDS(ON) (m) 2 -V DS , Drain-to-Source Voltage (V) 24 21 1.2 1.0 0.8 18 0.6 15 2 4 6 8 10 -50 0 50 100 150 o -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 2.5 6 T j =150 o C 4 -VGS(th) (V) -IS(A) 2 T j =25 o C 1.5 2 1 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4509GM P-Channel f=1.0MHz -VGS , Gate to Source Voltage (V) 12 10000 I D =- 8 A V DS =-24V 10 C (pF) 8 6 C iss 1000 C oss C rss 4 2 100 0 0 10 20 30 40 50 1 60 5 9 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 100us 10 1ms 10ms 1 100ms 1s 0.1 o T A =25 C Single Pulse DC Normalized Thermal Response (Rthja) 100 -ID (A) 13 -V DS , Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W 0.01 0.001 0.1 1 10 100 0.0001 0.001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 7