DESCRIPTION
Document No. 480 7113-001.B00 04/22/15 Page 1
SPECIFICATIONS
*Power will vary depending on the SDRAM used.
HX316C9SR/4
4GB (4GB 512M x 64-Bit)
DDR3-1600 CL9 240-Pin DIMM
Continued >>
kingston.com/hyperx
FEATURES
HyperX HX316C9SR/4 is a 512M x 64-bit (4GB) DDR3-1600
CL9 SDRAM (Synchronous DRAM) 1Rx8, memory module,
based on eight 512M x 8-bit FBGA components per module.
Each module supports Intel® XMP (Extreme Memory
Profiles). Each module has been tested to run at DDR3-1600
at a low latency timing of 9-9-9 at 1.5V. The SPDs are
programmed to JEDEC standard latency DDR3-1600
timing of 11-11-11 at 1.5V. Each 240-pin DIMM uses gold
contact fingers. The JEDEC standard electrical and
mechanical specifications are as follows:
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal banks
• Programmable CAS latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write (either on the fly using A12 or
MRS)
• Bi-directional Differential Data Strobe
• Internal (self) calibration: Internal self calibration through ZQ
pin (RZQ: 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°Cº
• Asynchronous Reset
• Height 1.311” (33.30mm), w/heatsink, single sided component
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command T ime (tRFCmin)
Row Active T ime (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
11 cycles
48.125ns(min.)
260ns(min.)
35ns(min.)
TBD W*
94 V - 0
0o C to +85o C
-55o C to +100o C
XMP TIMING PARAMETERS
•JEDEC: DDR3-1600 CL11-11-11 @1.5V
•XMP Profile #1: DDR3-1600 CL9-9-9 @1.5V