NE C ELECTRONICS INC 94 ye | b4y2@7s25 oo19074 O JU Fu 43-257 -PRELIMINARY SPECIFICATION MOS FIELD- EFFECT POWER TRANSISTOR ARBA- #PAI520 WG BLECTACN GEVICS . /- FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY FEATURES PACKAGE DIMENSIONS : eSultable for switching power supplies, in silliseters actuater controls,and pulse circuits Low RDSCon) No second breakdown wa VA UA E * lil Oo E ABSOLUTE MAXIMUM RATINGS ( Tae25 ) "98,5 MAX 4. a J ase 1.4 Drain to Source Voltage VOSS SCY 14 0.789,2 -* anne 620.1 " Gate to Source Voltage VGSS #ZCV qasanaanua Continuous Drain Current {DCDC)= ZA 123486 Fao Total Pover Dissipation PT 3.5 2,4,88:Cate Total Power Dissipation PT? 28V 3,5,7,9:0rain Channel Tezperature Teh 150C 1,10Source Storage Tezperature Tstg *ES~150 C . aTczST _ ELECTRICAL CHARACTERISTICS ( Tae28TC ) CHARACTERISTIC SYMBOL |MIN. | TYP. | MAX. [UNIT] TEST CONDITIONS MO Drain Leakage Current 10SS 10) 2A | YOS= 30V, VGS=9 Gate to Source Leakage Current ~ IGsS 100 | nA | VGS=220V,V0S=) Gate to Source Cutoff Voltage VGSCoff) | 1.0 | 2.5 V' | VDS=10V, [DelrA Forward Transfer Adzittance lyfs! | 1.0 S |VOSsi0V, ID=lA Orain to Source On-State Resistance | RDSCon) 0.11] 0.17) Q& | VGSsiov, ID=lA 0.20] 0.25 QQ }VGSe4, {D=0.8A Input Capacitance Ciss 500 pF |[VDS=!0V Output Capacitance Coss 20]. | pF Hives=o Reverse Transfer Cspaci tance Crss 30 pF iif=ihitz Turn-Cn Delay Tice tuCon) 10 ns |{Ib=iA , Yoosl0 Rise Tize tr 20 ns [/VG3Con)=16V Turn-Of? Celay Tise tuCoff) 80 rs }/RL=10 Q Fall Tine if 20 ns Mar.28.19&6 - (0-1778 Te ee NEC Corpcreticn NEC reserves the ght ts mane enarges at any time without Motice in ercer toN C ELECTRONICS INC 48 dey b4@?7SeS 0014080 7 , TY a N TURN-ON AND TURN-CFF TIME TEST CIRCUIT 6 RL OUT a K<z i , = ec Ri 1h Cc rei) Rinw 10 2 oe ae 7 Vin .- | j=! col ys Duty Cyciesi % OERATING CURVE OF SAFE OPERATING AREA | ! aT (28) 1 DERATING 6 Ly 100. 150 TC-Case Tesperature-C TOTAL POWES DISSIPATION vs. CASE TEMPERATURE i { 3 UNIT UNIT UNIT | PT-Total Poser Nisstpatton- G 2s ss 100 Zs 159 CASE TEMPERATURE (Cr G1 PT-Total Power Dissipation- t Vas Gate Py Wee 80 9g Vaita GS vy Wares 6 10 gob Can) form | ip sc 3 7 20% rain , , Current 0 10 fs'5 + 10 26 Wave form | | ta(on) ite *acotti5 ts ton toft FORWARD BIAS SAFe OPERATING AREA es wn in x . Ino { ( 5 {ti & Hi 5 1 oS = a tas = Ss Ty mis C Single Pulse 40 VDS-Drain to Source Yoltage- TOTAL POWER DISSIPATICN vs. AMBIENT TEYPERATURE NEC uPAISOOH 4 UNIT 3 UNIT 2 UT 1 UNIT 1G Ta-Aubient Tesperature-T 160 eaeN & C ELECTRONICS INC 48 DEB eyarses colds. 9 ff T-Y3-25 NEC SLECTRON DEVICE PF toe. FORWARD TRANSFER ADYITTANCE SOURCE TO DRAIN DIODE vs. DRAIN CURRE\T FORSARD VOLTAGE Wie Vos2l0 V Puised J yfs t -Forward Transfer Adutttance-S 1SN-Roverse Drain Current-A 0.0 Hil 0.01 0.2 t 1 0 6 1D-Drain Current-A VSD-Source to Drain Voltage- CAPACITANCE vs. DRAIN TO DRAIN TO SOURCE ON-STATE RESISTANCE SOURCE YOLTAGE vs, GATE TO SOURCE VOLTAGE 10000 Vom V luml A (=l Mis Pulsed a fa O. | . Qe se ! loo s 8 gs 43 5 =a -_ ~~ a 100 as . & s NI eee, T . 7 2 t @.2 = Et a) | | 0 LUE | 2! 1 10 100 6 10 26 YDS-Drain to Source Yoltage- VGS-Gate to Source Yoltage-Y DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE vs. DRAIN CURRENT 0.3 Ves@lo lata e 0.6 2 gc Se aes Ss? ae BE o, = e t fied gs, $s | vseey a PTs) rt eg pe es) My = | 2 Fe _ as | | wma = = 0.1 Be 032 . S= | i! ee oUhL ze | ae | | ce - ~ LETT y 7 Lit : by qla 2 0.3 i Q 20 4a 60 6 0 10160 Tch-Channel Teaperature-C . 10-Drain Currens-!NE C ELECTRONICS INC 494 Dey b427525 0019082 o Ef T1325 ee Nic ELESTRON SEsiCS GATE TO SOURCE CUTOFF VOLTAGE TRANSFER CHARACTERISTICS . WS. CHANNEL TEMPERATURE Vosm@ic | | Vos #10 V Puised 1 foal 2a a SG rs 3 | & 2 s= = 3 g= as e =e & ~~ E BE e > 6 5 0 a ee ee VGS-Gate to Source Voltage- . Tch-Channe! Tesperature-C . DRAIN CURRENT vs. DRAIN 70 : SOURCE YOLTAGE SWITCHING CHARACTERISTICS 3 wv Wf, |_| |_| Paar | Ae 3 = LAT ITT j E a LT TPE Rae _ 2 {PETTITTE has 2 PITT & tii ttiith DRAIN CURRENT Tv (A? YDS-Drain to Source Yoltage- NEC Corporation INTERNATIONAL ELECTAON DEVICES DIV. NEC Suiiding, 33-1, Shiba Gochome Minato-ku, Tokyo 10@, Japan Tel: Tokyo 454=11171 . Telex Address: NECTOK J22685 Cable Address: MICACPHONE TOKYO Printed in Jacan ve