AUTOMOTIVE GRADE AUIRF7103Q HEXFET(R) Power MOSFET Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 V(BR)DSS 50V RDS(on) max. 130m ID Top View 3.0A Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. SO-8 AUIRF7103Q Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified. Parameter Max. Units ID @ TA = 25C Continuous Drain Current, VGS @ 4.5V 3.0 ID @ TA = 70C Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2.5 IDM PD @TA = 25C Power Dissipation 2.4 W VGS 16 20 W/C V EAS Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) 22 mJ IAR Avalanche Current EAR dv/dt TJ TSTG c e c h Peak Diode Recovery dv/dt g A 25 f See Fig. 16c, 16d, 19, 20 Repetitive Avalanche Energy Operating Junction and A mJ V/ns C 12 -55 to + 175 Storage Temperature Range Thermal Resistance Typ. Max. Units RJL Junction-to-Drain Lead Parameter --- 20 C/W RJA Junction-to-Ambient --- 62.5 fg HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 December 5, 2012 AUIRF7103Q Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 50 --- --- --- 0.057 --- --- --- 130 --- --- 200 1.0 --- 3.0 3.4 --- --- --- --- 2.0 --- --- 25 --- --- -100 --- --- 100 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 3.0A m VGS = 4.5V, ID = 1.5A V VDS = VGS, ID = 250A S VDS = 15V, ID = 3.0A VDS = 40V, VGS = 0V A VDS = 40V, VGS = 0V, TJ = 55C VGS = 20V nA VGS = -20V d d Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- --- --- --- --- --- --- --- 10 1.2 2.8 5.1 1.7 15 2.3 255 69 29 15 --- --- --- --- --- --- --- --- --- ID = 2.0A nC VDS = 40V VGS = 10V VDD = 25V ID = 1.0A ns RG = 6.0 RD = 25 VGS = 0V pF VDS = 25V = 1.0MHz d Diode Characteristics Parameter IS Continuous Source Current VSD trr Qrr (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time ISM c Min. Typ. Max. Units --- --- 3.0 A --- --- 12 --- --- --- --- 35 45 1.2 53 67 Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. V TJ = 25C, IS = 1.5A, VGS = 0V ns TJ = 25C,IF = 1.5A nC di/dt = 100A/s d d Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in square Cu board. Starting TJ = 25C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Figure 12). ISD 2.0A, di/dt 155A/s, VDD V(BR)DSS, TJ 175C. Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance. 2 December 5, 2012 www.irf.com AUIRF7103Q Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD RoHS Compliant Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 Class M1A (+/- 50V) AEC-Q101-002 Human Body Model Class H0 (+/- 250V) AEC-Q101-001 Charged Device Model Class C5 (+/- 1125V) AEC-Q101-005 Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage. www.irf.com 3 December 5, 2012 AUIRF7103Q 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 4.5V 10 20s PULSE WIDTH Tj = 25C 1 10 1 20s PULSE WIDTH Tj = 175C 0.1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 T J = 175C T J = 25C VDS = 25V 20s PULSE WIDTH 1.00 3.0 6.0 9.0 12.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 December 5, 2012 10 100 Fig 2. Typical Output Characteristics 100.00 10.00 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID, Drain-to-Source Current ) 4.5V 15.0 ID = 3.0A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRF7103Q 10000 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd 1000 Ciss Coss 100 Crss 6 3 10 1 10 0 100 0 3 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ID, Drain-to-Source Current (A) TJ = 175 C 1 TJ = 25 C V GS = 0 V 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 9 12 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 0.1 0.4 6 QG, Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) VDS = 40V VDS = 25V VDS = 10V 9 VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) Coss = Cds + Cgd I D = 2.0A OPERATION IN THIS AREA LIMITED BY R DS(on) 10 1 100sec 1msec 0.1 Tc = 25C Tj = 175C Single Pulse 0.01 0 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 December 5, 2012 AUIRF7103Q RD VDS 3.0 V GS ID , Drain Current (A) 2.4 D.U.T. RG + -VDD 1.8 VGS Pulse Width s Duty Factor 1.2 Fig 10a. Switching Time Test Circuit 0.6 0.0 25 50 75 100 125 150 VDS 175 90% TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response ( Z thJA ) C/W D = 0.50 0.20 0.10 0.05 10 0.02 0.01 1 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient 6 December 5, 2012 www.irf.com 0.15 RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to -Source On Resistance () AUIRF7103Q 0.14 0.13 0.12 ID = 3.0A 0.11 0.10 0.09 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 2.500 2.000 1.000 0.500 VGS = 10V 0.000 0 -V GS, Gate -to -Source Voltage (V) 5 10 15 20 25 30 35 40 ID , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current Fig 12. Typical On-Resistance Vs. Gate Voltage 2.0 70 60 1.8 50 ID = 250A Power (W) V GS(th) Gate threshold Voltage (V) VGS = 4.5V 1.500 1.5 40 30 20 1.3 10 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) Fig 14. Typical Threshold Voltage Vs. Junction Temperature www.irf.com 0 1.00 10.00 100.00 1000.00 Time (sec) Fig 15. Typical Power Vs. Time 7 December 5, 2012 AUIRF7103Q EAS , Single Pulse Avalanche Energy (mJ) 60 TOP 48 BOTTOM ID 1.2A 2.5A 3.0A 15V 36 D.U.T RG 24 DRIVER L VDS + - VDD IAS 20V tp A 0.01 12 0 Fig 16c. Unclamped Inductive Test Circuit 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 16a. Maximum Avalanche Energy Vs. Drain Current V(BR)DSS tp I AS Fig 16d. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50K 12V VGS .2F .3F D.U.T. QGS + V - DS QGD VG VGS 3mA IG ID Current Sampling Resistors Fig 17. Gate Charge Test Circuit 8 December 5, 2012 Charge Fig 18. Basic Gate Charge Waveform www.irf.com AUIRF7103Q 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 10 1 0.01 0.1 0.05 0.10 0.01 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 tav (sec) Fig 19. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 25 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 3.0A 20 15 10 5 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 20. Maximum Avalanche Energy Vs. Temperature www.irf.com 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = t av *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave) *tav 9 December 5, 2012 AUIRF7103Q SO-8 Package Outline Dimensions are shown in millimeters (inches) ' ',0 % $ $ + >@ ( ;E >@ $ $ 0,//,0(7(56 0,1 0$; $ E F ' ( H %$6,& %$6,& H + %$6,& %$6,& . / \ $ ; H H ,1&+(6 0,1 0$; .[ & \ >@ & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;/ ;F )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 December 5, 2012 www.irf.com AUIRF7103Q SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. www.irf.com 11 December 5, 2012 AUIRF7103Q Ordering Information Base part number Package Type Standard Pack AUIRF7103Q SO-8 Form Tube Tape and Reel 12 December 5, 2012 Complete Part Number Quantity 95 4000 AUIRF7103Q AUIRF7103QTR www.irf.com AUIRF7103Q IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 13 December 5, 2012