SEMICONDUCTOR BF421 TECHNICAL DATA SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. B C FEATURES A High Voltage : VCEO>-300V Complementary to BF420. N K E G ) RATING UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V IC -50 ICP -100 Collector Power Dissipation PC 625 mW Base Current IB -50 mA Junction Temperature Tj 150 Tstg -65 150 DC Collector Current Peak Storage Temperature Range 1 2 3 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ) SYMBOL ICBO Collector Cut-off Current F mA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC H F C SYMBOL MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC L MAXIMUM RATING (Ta=25 J D DIM A B C D E F G H J K L M N TEST CONDITION MIN. TYP. MAX. UNIT VCB=-200V, IE=0 - - -10 nA VCB=-200V, IE=0, Tj=150 - - -10 A - - -50 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 DC Current Gain hFE VCE=-20V, IC=-25mA 50 - - - VCE(sat) IC=-30mA, IB=-5mA - - -0.6 V Base-Emitter Voltage VBE VCE=-20V, IC=-25mA - -0.75 - V Transition Frequency fT VCE=-10V, IC=-10mA 60 - - MHz Reverse Transfer Capacitance Cre VCB=-30V, IE=0, f=1MHz - - 1.6 pF Collector-Emitter Saturation Voltage 2002. 6. 25 Revision No : 3 1/3 BF421 I C - VCE (LOW VOLTAGE REGION) 0.6 0.4 -40 0.2 0.15 -20 0.1 I B =0.05mA -10 VCE =-20V 100 50 -4 -8 -12 -16 -20 -24 -10 30 -5 10 0 0 COMMON EMITTER Ta=25 C 300 0.3 -30 0 500 COMMON EMITTER Ta=25 C 5 -0.3 -28 COLLECTOR-EMITTER VOLTAGE VCE (V) -1 Ta=25 C Ta=-25 C 50 30 10 5 -0.3 -1 -3 -10 -30 -100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE Ta=100 C 100 -5 -1 -0.5 -0.3 I C/I B -0.1 -0.05 -0.3 -1 -25 -3 -10 25 -30 COLLECTOR CURRENT IC (mA) 2002. 6. 25 Revision No : 3 -100 -40 -100 (mA) -30 00 C -0.3 -1 -30 COMMON EMITTER VCE =10V -20 Ta=1 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.05 -0.3 -10 I C - V BE -50 -0.1 5 2 COLLECTOR CURRENT I C COMMON EMITTER I C /IB =5 0 C Ta=10 =10 -3 VCE(sat) - I C -3 -100 COMMON EMITTER Ta=25 C -3 COLLECTOR CURRENT I C (mA) -5 -30 V CE(sat) - I C COMMON EMITTER V CE =-10V 300 -10 COLLECTOR CURRENT I C (mA) h FE - I C 500 -3 Ta=-25 C 1.0 Ta=25 C 3.0 -50 1.6 h FE - I C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) -60 -10 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 2/3 BF421 10 f T - IC TRANSITION FREQUENCY f T (MHz) COLLECTOR OUTPUT CAPACITANCE Cob (pF) REVERSE TRANSFER CAPACITANCE C re (pF) C ob .C re - V CB I E =0 f=1MHz Ta=25 C 8 6 4 C ob 2 0 C re 0 -40 -80 -120 -160 -200 -240 -280 500 COMMON EMITTER Ta=25 C 300 VCE =-20V 100 VCE =-10V 50 30 10 -0.3 -1 COLLECTOR-BASE VOLTAGE V CB (V) -100 600 400 200 80 120 160 AMBIENT TEMPERATURE Ta ( C) 200 COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) 800 I C MAX.(PULSED) * 1 10 0ms 0m s * * s 1m -200 40 -30 SAFE OPERATING AREA 1000 0 -10 COLLECTOR CURRENT I C (mA) P C - Ta 0 -3 I C MAX.(CONTINUOUS) -50 -30 DC OP ER -10 AT IO * N -5 -3 * CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. -1 -0.5 SINGLE NONREPETITIVE PULSE Ta=25 C -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE V CE (V) 2002. 6. 25 Revision No : 3 3/3