2002. 6. 25 1/3
SEMICONDUCTOR
TECHNICAL DATA BF421
SILICON PNP TRIPLE DIFFUSED TYPE
Revision No : 3
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATIONS.
FEATURES
High Voltage : VCEO>-300V
Complementary to BF420.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO
VCB=-200V, IE=0 - - -10 nA
VCB=-200V, IE=0, Tj=150 - - -10 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -50 nA
DC Current Gain hFE VCE=-20V, IC=-25mA 50 - - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-30mA, IB=-5mA - - -0.6 V
Base-Emitter Voltage VBE VCE=-20V, IC=-25mA --0.75 - V
Transition Frequency fTVCE=-10V, IC=-10mA 60 - - MHz
Reverse Transfer Capacitance Cre VCB=-30V, IE=0, f=1MHz - - 1.6 pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -300 V
Collector-Emitter Voltage VCEO -300 V
Emitter-Base Voltage VEBO -5 V
Collector Current DC IC-50 mA
Peak ICP -100
Collector Power Dissipation PC625 mW
Base Current IB-50 mA
Junction Temperature Tj150
Storage Temperature Range Tstg -65 150
2002. 6. 25 2/3
BF421
Revision No : 3
0
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V (LOW VOLTAGE REGION)
0
COLLECTOR CURRENT I (mA)
C
0
BASE-EMITTER VOLTAGE V (V)
BE
BEC
I - V
10
DC CURRENT GAIN h FE
-3 -10-1-0.3
COLLECTOR CURRENT I (mA)
C
h - I
CE(sat)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
C
V - I
-4 -8 -12 -16 -20 -24 -28
-10
-20
-30
-40
-50
-60
COMMON
EMITTER
1.6 1.0 0.6
0.4
0.3
0.2
0.15
I =0.05mA
0
B
0.1
FE C
-30 -100
5
30
50
100
300
500
C
COLLECTOR CURRENT I (mA)
CFE
h - I
-0.3
5
DC CURRENT GAIN h FE
100
10
50
30
300
500
-1 -3 -10 -100-30
COMMON EMITTER
Ta=25 C
V =-20V
-10
-5
CE
COMMON EMITTER
V =-10V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
CE(sat) C
VOLTAGE V (V)
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-10
-20
-30
-40
-50
COMMON EMITTER
V =10V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
3.0
Ta=25 C
-10-0.3
-0.05
-0.1
-0.5
-0.3
-1
-5
-3
-1 -3
COMMON EMITTER
Ta=25 C
-30 -100
I /I =10
CB
5
2
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATION
C
COLLECTOR CURRENT I (mA)
CE(sat)
-0.05
-0.3
-0.1
-0.5
-0.3
-1
-1 -3 -10 -100-30
I /I =5
COMMON EMITTER
-5
-3
CE(sat)
V - I C
CB
Ta=100 C
25
-25
2002. 6. 25 3/3
BF421
Revision No : 3
C
P (mW)
COLLECTOR POWER DISSIPATION COLLECTOR OUTPUT CAPACITANCE C (pF)
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
TRANSITION FREQUENCY f (MHz)
T
COLLECTOR CURRENT I (mA)
C
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
C
CE
re
REVERSE TRANSFER CAPACITANCE C (pF)
1000
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
I MAX.(PULSED)
I MAX.(CONTINUOUS)
DC OPERATION
COMMON EMITTER
0
0
0
re
ob
C .C - V
-3 -10-1-0.3
0
C
P - Ta
f - I
-3 -10
SAFE OPERATING AREA
CB
-40 -80 -120 -160 -200 -240 -280
2
4
6
8
10
I =0
f=1MHz
Ta=25 C
E
Cob
Cre
40 80 120 160 200
200
400
600
800
-30 -100 -300
-0.5
-1
-3
-5
-10
-30
-50
-100
-200
*
C
C
*
100ms
10ms
1ms
*
*
*
TC
-30
10
30
50
100
300
500
Ta=25 C
V =-20V
CE
V =-10V
CE
