CMPT6517 NPN CMPT6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS SOT-23 CASE MAXIMUM RATINGS (Ta=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO Ic lB PD Ty. Tstg OJA Central . Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT6517, CMPT6520 types are complementary _ silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage driver and amplifier applications. Marking Codes are C1Z and C2Z Respectively. ELECTRICAL CHARACTERISTICS (T,=25C unless otherwise noted) SYMBOL ICBO lEBO lEBO BVCBO BYVCEO BVEBO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) TEST CONDITIONS Vop=250V VEp=5.0V (CMPT6517) Vep=4.0V (CMPT6520) Io=100nA Ic=1.0mA le=10nA (CMPT6517) ie=10nA (CMPT6520) IG=t0mA, IB=1.0mA IG=20mA, I_=2.0mA Io=30MA, Ip=3.0mMA ic=50mA, IR=5.0mA Ic=10mA, Ip=1.0mA Ic=20mA, Ip=2.0mA 232 UNITS 350 V 350 V 5.0 Vv 500 mA 250 mA 350 mW -65 to +150 oC 357 OC/wW MIN MAX UNITS 50 nA 50 nA 50 nA 350 Vv 350 Vv 6.0 Vv 5.0 Vv 0.30 Vv 0.35 Vv 0.50 Vv 1.0 Vv 0.75 Vv 0.85 VvSYMBOL TEST CONDITIONS MIN MAX UNITS VBE(SAT) Ic=30mA, Ip=3.0mA 0.90 Vv VBE(ON) Vce=1 OV, Ic=100mA 2.0 V NEE VcE=10V, Ic=1.0mA 20 DFE VCE=10V, Io=10mA 30 NEE VOE=10V, I=30mA 30 200 Ree VoE=10V, Io=50mA 20 200 NrE VCE=10V, Io=100mA 15 iT Vop=20V, Ic=10mA, f=20MHz 40 200 MHz Cob Vop=20v, Ic=0, f=1.0MHz 6.0 pF Cep VEB=O0.5V, le=0, f=1.0MHz (CMPT6517) 80 pF Ceb Vep=0.5V, le=0, f=1.0MHz (CMPT6520) 100 pF All dimensions in inches (mm). -003(0.08} -006(0.18) -110(2.80) -118(3.00) -983(2.10) NOMINAL +041(14.05) -106(2.70) -047(1.19 MAXIMUM ) -983(1.60) -914(0.35) -020(0.50) -005(0.13) MAXIMUM 4 -037(0.94} -050(1.28) LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 233