MOTOROM Order this document by 2CW9HWD SEMICONDUCTOR TECHNICAL DATA o ft. b-. ,.;y.,;~,?... .,,,.,,~, .', , Ill. ,,$tlt , il[ill' y, 2C3439HV Chip NPN Silicon Srnall+ignal Transistor .. designed ~o for highvoltage, higburrent appliostions in switching and amplifier service. V(BR)CEO =350 Vdc `Min [c= 1.0 Adc, Max . hFE =40 Min @ iC =20 mAdc . VCE(sat) = 0.5 Vdc MSX@ Ic = 50 mAdc MAXIMUM RATINGS Symbol Colleotor-EmittsrVobge Ooll-or+aee VCBO Em'tier=ase Vohge VEBO ~llmor Current Power Dissi~tion @ TA = 25C Derate above 25C o ,,! ,. ~@<::*>p,,F VCEO Vo~e ELECTRICAL CHARACTERISTICS Vdc V* ,!ftk...:">"> ":, bb.o Vdo Ado PD Watts mW/4C -65 to +200 `c nlessothe~ise noted.) CharactariWc OFF CHARACTERISTIC $$ 45@+, Ic Ta#:g$, .J,i. ?,. $ .,,,$. *I:!..,..,. ,.$+,i ., . ..! ,k ~>,::.:-,:\' ,.> *$>, Storageand Jution Temprsture Range Mln I M= Unit Physical Characteristics: ,;+:~$a@ V(BR)CEO 350 -- Vti ~?::t,* tilleotor CutoffCurrent,i,$%k~tfl~' .l.+ ~cE = 300 V&) "'$:.:~.%. ,~l~t,, lCBO -- 20 @do OollsctorCutoffC* ~cE . ~~o v*~;;,$$ lc~ -- -- -- 20 500 1.0 @& @dc mAdc -- -- 500 N -- 20 Colieotor+mtier Breakdown,a~~ ~cE = e~w;. ~CE ` 3~:~, :,:*1 Operation :~1, `~kaK181 PlwTechnologies ,t,% `y;>;j4 $. `..~..>,i::*~ ,,;.$:. ~\x, \,>,,.1+ ,,+$:,'" ~$, x.,,,.A&4:,,3$~ t>,:.:!, ,\.,, .>.\ .... ,:?P. "' ,,...,,, \$. ,,,>.., .!!' +,<:, >+t, ,,., value $p>k''?~>+ Unit Rating , `""' ~ ~A = 150C) @dc iCEx b Vdc, VBE = 1.5Vdc) lEBO Die Size -- 45x 45 roils Die Thickness -- 7-11 roils Bond Pad S1= Emitter -- 4.0x 7.0 roils *se -- 4.0x 7.0 roils Back Metal 20 ~ Gold (Nom) Top Metal 15 ~ Alum. (Nom) Back Side Collwtor @do (continu@ o R-O 91es @ Motorola,Im. 19W M-ROLA @ 2C3439HV ELECTRICAL CHARACTERISTICS --oontinud CA =25C unless othetisenoted.) Charaotetidc I S~boI Mln Mu I Unit ON CHARAWERISTIOS DC Current Gain* (1c = 0.2 tide, VCE .10 Vdc) (!C = 2,0 mAdc, VCE .10 Vdc) (1C= 20 ~dc, vcE .10 Vdc) (1c = 20 Wdc, VCE = 10 Vdc, TA = - 650C) -- hFE 40 15 -- -- 160 -- 0.5 10 30 Collector-Emitter Saturation Vohge* (IC = 50 mAdc, iB = 4.0 tidC) VCE(~) - Bas-Emitter Saturation Vokge' (IC = 50 tide, IB = 4.0 mAdc) VBE(~at) -- SmeiWgnd Current Gain (1c = 5.0 tide, VCE = 10 Vdc) he - Smal%ignal Current Transfer Ratio, Magnitude (ic = 10 rnAdc, VCE = 10 Vdc, f = 5.0 MHz) Ihfel 3.0 SMALL41GNAL CHARACTERI=ICS output Cmnce ~CB=lOVdc, cob f=100kHz-1.OMHz) Input CapactiM WBE = 5.0 Vdc, f = 100kHz - 1.0 MHz) q~ ,@& ${.<. ,:t':.~ ~$ ,.,.:,+ ,, ,tl.gi$,\\ ,.,, , ,$. >>&,.::+ ` .,.?, ,.~~ ~.,,.1:.',' Input Resistance ~CE = 10 Vdc, IC = 5.0 rnAdc, f = 1.0 MHz) Re ~~1 `" ..:/,., ,~,.>as:$,,, `~ .:,~.~!~. SWITCHING CHARACTERISTICS (IC = 20 Wdc, iB .2.0 mAdc) `t,}\?,,3$ ~. ~l,.+, :+:\<,f\:y:;. Tu@n Tme F, ~*%n *J* Tuti mme %ff ,,>,$~. J.,,:. ASSURANCE TESTING (PrdPoa BurnAn) -- -.?/s 10 pF 75 pF -- 300 ohms - 1.0 w - 10 @ "a .,R>.,,-..$, ,.?4,:,,. ,.`:... Y*,S.**,. Initial and End Point Llmlte Charaoterlstice Tested \ `*\\t,, ,~., $>~ ,+., -~ *i*. `. %}.>* ;.$ ~1 :,,\:~f\ ,.. ; :, ~:, 2pP(.y~,a DC Current Gain" (Ic = 20 mAdc, VCE = 10 V~J,,,~:, :] .i,j:. V,$:i Collector Cutoff Cuwent ~CE = 300 Vdc) Unit Mln M= iCEO -- 20 ~dc hFE 40 160 -- YOof Intial Value @dc YO COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA of Initial Value 2C3439HV Lltereture Dlstibutfa @ntem. USA Motorola Litetiure Dietnbutfow P.O. Box 20912 Pbnix, Arizona WOW, EUROPE Motorola Ltd.; Europ Lherature Oentrq SSTanners Drive, Bl&efands, Mikon Keynes, MK14 5BP, England. JAPAN Mppon Motorola Ltd.; =-1, Nishffiotende, ShinagewaAu, To~o 141, Japan. ASIA PACIFIC Motorola Semimndudore H.K. Ltd.; Sifii Htiur Oenter, No. 2 Dai King Street Td Po Industrid Estate, Tai Po, N.T., Hong KOW. M~ROLA @ 1PHX241011-2 PRINTED IN USA WW MPWPOD CPTO YDACAA 2C~9WlD lllllllllllllllllllllllllllllllllllllllillllllllll