2C3439HV - Motorola / Freescale Semiconductor

MOTOROM

SEMICONDUCTOR TECHNICAL DATA Order this document

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2C3439HV Chip ft.

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Srnall+ignal Transistor ,$tlt Ill.

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●V(BR)CEO =350 Vdc ‘Min

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●[c= 1.0 Adc, Max ,t,%‘y;>;j4

.hFE =40 Min @iC =20 mAdc $‘..~..>,i::*~

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.VCE(sat) =0.5 Vdc MSX@Ic =50 mAdc \,>,,.1+,,+$:,’”

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MAXIMUM RATINGS ,,...,,, \$.

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Rating Symbol value $p>k’’?~>+ Unit

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Colleotor-EmittsrVobge VCEO ~@<::*>p,,F Vdc

Ooll-or+aee Vo~e VCBO $$ 45@+, V*

Em’tier=ase Vohge VEBO “:, bb.o

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~llmor Current Ic Ado

PowerDissi~tion @TA=25°C PD Watts

Derateabove25°C

mW/4C

StorageandJution Ta#:g$, -65 to+200 ‘c

Temprsture Range .J,i.?,

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ELECTRICAL CHARACTERISTICS nlessothe~ise noted.)

CharactariWc Mln IM= Unit

OFF CHARACTERISTIC ,;+:~$a@

Colieotor+mtier Breakdown,a~~ V(BR)CEO 350 —Vti

tilleotor CutoffCurrent,i,$%k~tfl~’

~?::t,* lCBO —20 @do

~cE =300 V&) .l.+

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OollsctorCutoffC* ‘“”’ lc~

~cE .~~ov*~;;,$$ —20 @&

~cE =e~w;. ~—500 @dc

~CE ‘3~:~, ~A =150°C) —1.0 mAdc

iCEx

bVdc, VBE =1.5Vdc) @dc

—500

—N

lEBO —20 @do

Physical

Characteristics:

Die Size —

45x 45 roils

Die Thickness —

7-11 roils

Bond Pad S1=

Emitter —4.0x 7.0 roils

*se —4.0x 7.0 roils

Back Metal

20 ~Gold (Nom)

Top Metal

15 ~Alum. (Nom)

Back Side ❑Collwtor

(continu@

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@M-ROLA

@Motorola,Im. 19W

2C3439HV

ELECTRICAL CHARACTERISTICS —oontinud CA=25°C unless othetisenoted.)

Charaotetidc IS~boI Mln IMu Unit

ON CHARAWERISTIOS ●

DC Current Gain* hFE

(1c=0.2 tide, VCE .10 Vdc) —

(!C =2,0 mAdc, VCE .10 Vdc) —

(1C=20 ~dc, vcE .10 Vdc) —

40 160

(1c=20 Wdc, VCE =10 Vdc, TA =-650C) 15 —

Collector-Emitter Saturation Vohge* VCE(~) –0.5

(IC =50 mAdc, iB =4.0 tidC)

Bas-Emitter Saturation Vokge’ VBE(~at) —

(IC =50 tide, IB =4.0 mAdc)

SMALL41GNALCHARACTERI=ICS

SmeiWgnd Current Gain he –

(1c=5.0 tide, VCE =10 Vdc)

Smal%ignal Current Transfer Ratio, Magnitude Ihfel 3.0

(ic =10 rnAdc, VCE =10 Vdc, f=5.0 MHz) —

output Cmnce cob -.?/s

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~CB=lOVdc, f=100kHz-1.OMHz) 10 pF

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Input CapactiM

WBE =5.0 Vdc, f=100kHz -1.0 MHz) q~ ,$. ‘

>>&,.::+ 75 pF

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Input Resistance Re ~~1 ‘“ —

~CE =10 Vdc, IC =5.0 rnAdc,f=1.0 MHz) 300 ohms

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SWITCHING CHARACTERISTICS (IC =20 Wdc, iB.2.0 mAdc) .:,~.~!~.

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Tu@n Tme F, ~*%n –

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Tuti mme *J* %ff –10 @

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ASSURANCE TESTING (PrdPoa BurnAn) .,R>.,,-

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Initial and End Point Llmlte

Charaoterlstice Tested Unit

Mln M=

Collector Cutoff Cuwent $>~\‘*\\t,,

,~., ,+.,-~ iCEO —20 ~dc

~CE =300 Vdc) *i*. ‘.

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~1:,,\:~f\

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DC Current Gain” ;:, ~:,

2pP(.y~,a hFE 40 160 —

(Ic =20 mAdc, VCE =10 V~J,,,~:, :]

V,$:i

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YOof Intial Value

@dc

YO of Initial Value

COMMERCIAL PLUSAND MIUAERO SMALL SIGNAL TRANSISTOR DATA

2C3439HV

Lltereture Dlstibutfa @ntem.

USA Motorola Litetiure Dietnbutfow P.O.Box 20912 Pbnix, Arizona WOW,

EUROPE Motorola Ltd.; Europ Lherature Oentrq SSTanners Drive, Bl&efands, Mikon Keynes, MK14 5BP,England.

JAPAN Mppon Motorola Ltd.;=-1, Nishffiotende, ShinagewaAu, To~o 141,Japan.

ASIA PACIFIC Motorola Semimndudore H.K. Ltd.; Sifii Htiur Oenter,No. 2Dai King Street Td Po Industrid Estate,TaiPo, N.T.,Hong KOW.

@M~ROLA

1PHX241011-2 PRINTEDIN USA WW MPWPOD CPTO YDACAA 2C~9WlD

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