Optocoupler, Phototransistor Output,
with Base Connection
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 81864
1Rev. 1.0, 11-Mar-08
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Vishay Semiconductors
DESCRIPTION
The 4N25 family is an Industry Standard Single Channel
Phototransistor Coupler. This family includes the
4N25/4N26/4N27/4N28. Each optocoupler consists of
gallium arsenide infrared LED and a silicon NPN
phototransistor.
These couplers are Underwriters Laboratories (UL) listed to
comply with a 5300 VRMS isolation test voltage. This isolation
performance is accomplished through special Vishay
manufacturing process.
Compliance to DIN EN 60747-5-2 (VDE 0884)/
DIN EN 60747-5-5 pending partial discharge isolation
specification is available by ordering option 1.
These isolation processes and the Vishay ISO9001 quality
program results in the highest isolation performance
available for a commercial plastic phototransistor
optocoupler.
The devices are also available in lead formed configuration
suitable for surface mounting and are available either on
tape and reel, or in standard tube shipping containers.
Note
For additional design information see application note 45 normalized curves
FEATURES
Isolation test voltage 5300 VRMS
Interfaces with common logic families
Input-output coupling capacitance < 0.5 pF
Industry standard dual-in-line 6-pin package
Lead (Pb)-free component
Component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
AC mains detection
Reed relay driving
Switch mode power supply feedback
Telephone ring detection
Logic ground isolation
Logic coupling with high frequency noise rejection
AGENCY APPROVALS
UL1577, file no. E52744 system code H or J, double
protection
DIN EN 60747-5-2 (VDE 0884)
DIN EN 60747-5-5 pending
available with option 1
Note
For additional information on the available options refer to option information.
i179004
1
2
3
6
5
4
B
C
E
A
C
NC
ORDER INFORMATION
PART REMARKS
4N25-X000 CTR > 20 %, DIP-6
4N26-X000 CTR > 20 %, DIP-6
4N27-X000 CTR > 10 %, DIP-6
4N28-X000 CTR > 10 %, DIP-6
4N25-X006 CTR > 20 %, DIP-6 400 mil (option 6)
4N25-X007 CTR > 20 %, SMD-6 (option 7)
4N25-X009 CTR > 20 %, SMD-6 (option 9)
4N26-X006 CTR > 20 %, DIP-6 400 mil (option 6)
4N26-X007 CTR > 20 %, SMD-6 (option 7)
4N26-X009 CTR > 20 %, SMD-6 (option 9)
4N27-X007 CTR > 10 %, SMD-6 (option 7)
4N27-X009 CTR > 10 %, SMD-6 (option 9)
4N28-X009 CTR > 10 %, SMD-6 (option 9)
Document Number: 81864 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.0, 11-Mar-08 2
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Optocoupler, Phototransistor Output,
with Base Connection Vishay Semiconductors
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Forward current IF60 mA
Surge current t 10 µs IFSM 2.5 A
Power dissipation Pdiss 100 mW
OUTPUT
Collector emitter breakdown voltage VCEO 70 V
Emitter base breakdown voltage VEBO 7V
Collector current IC50 mA
t 1.0 ms IC100 mA
Power dissipation Pdiss 150 mW
COUPLER
Isolation test voltage VISO 5300 VRMS
Creepage 7.0 mm
Clearance 7.0 mm
Isolation thickness between emitter and
detector 0.4 mm
Comparative tracking index DIN IEC 112/VDE0303, part 1 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj100 °C
Soldering temperature (2)
max.10 s dip soldering:
distance to seating plane
1.5 mm
Tsld 260 °C
ELECTRICAL CHARACTERISTICS (1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage (2) IF = 50 mA VF1.3 1.5 V
Reverse current (2) VR = 3.0 V IR0.1 100 µA
Capacitance VR = 0 V CO25 pF
OUTPUT
Collector base breakdown voltage (2) IC = 100 µA BVCBO 70 V
Collector emitter breakdown voltage(2) IC = 1.0 mA BVCEO 30 V
Emitter collector breakdown voltage (2) IE = 100 µA BVECO 7V
ICEO(dark) (2) VCE = 10 V, (base open)
4N25 5 50 nA
4N26 5 50 nA
4N27 5 50 nA
4N28 10 100 nA
ICBO(dark) (2) VCB = 10 V,
(emitter open) 2.0 20 nA
Collector emitter capacitance VCE = 0 CCE 6.0 pF
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 81864
3Rev. 1.0, 11-Mar-08
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27 and 4N28 respectively.
Note
Indicates JEDEC registered values.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Forward Voltage vs. Forward Current Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
COUPLER
Isolation test voltage (2) Peak, 60 Hz VIO 5300 V
Saturation voltage, collector emitter ICE = 2.0 mA, IF = 50 mA VCE(sat) 0.5 V
Resistance, input output (2) VIO = 500 V RIO 100 GΩ
Capacitance, input output f = 1 MHz CIO 0.5 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
DC current transfer ratio VCE = 10 V, IF = 10 mA
4N25 CTRDC 20 50 %
4N26 CTRDC 20 50 %
4N27 CTRDC 10 30 %
4N28 CTRDC 10 30 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Rise and fall times VCE = 10 V, IF = 10 mA, RL = 100
Ωtr, tf2.0 µs
ELECTRICAL CHARACTERISTICS (1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
i4n25_01
1001010.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current (mA)
VF -Forward Voltage (V)
TA = - 55 °C
TA = 25 °C
TA = 85 °C
i4n25_02
0.0
0.5
1.0
1.5
0 10 100
I
F
- LED Current (mA)
NCTR
NCTR(SAT)
NCTR - Normalized CTR
CTR
CE(sat)
= 0.4 V
V
CE
= 10 V, I
F
= 10 mA, T
A
= 25 °C
T
A
= 25 °C
Normalized to:
1
Document Number: 81864 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.0, 11-Mar-08 4
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Optocoupler, Phototransistor Output,
with Base Connection Vishay Semiconductors
Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 4 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 5 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 6 - Collector Emitter Current vs.
Temperature and LED Current
Fig. 7 - Collector Emitter Leakage Current vs. Temperature
Fig. 8 - Normalized CTRcb vs. LED Current and Temperature
i4n25_03
1001010.1
0.0
0.5
1.0
1.5
I
F
- LED Current (mA)
NCTR - Normalized CTR
CTRCE(sat) VCE = 0.4 V
NCTR
NCTR(SAT)
TA = 50 °C
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
i4n25_04
1001010.1
0.0
0.5
1.0
1.5
IF - LED Current (mA)
NCTR - Normalized CTR
NCTR
NCTR(SAT)
TA = 70 °C
Normalized to:
CTRCE(sat) VCE = 0.4 V
VCE = 10 V, IF = 10 mA, TA = 25 °C
i4n25_05
1001010.1
0.0
0.5
1.0
1.5
IF - LED Current (mA)
NCTR - Normalized CTR
NCTR
NCTR(SAT)
TA = 85 °C
Normalized to:
CTRCE(sat) VCE = 0.4 V
VCE = 10 V, IF = 10 mA, TA = 25 °C
i4n25_06
6050403020100
0
5
10
15
20
25
30
35
50 °C
70 °C
85 °C
IF - LED Current (mA)
ICE - Collector Current (mA)
25 °C
i4n25_07
100806040200- 20
10- 2
10- 1
100
101
102
103
104
105
Tamb- Ambient Temperature (°C)
ICEO - Collector Emitter (nA)
Typical
VCE = 10 V
i4n25_08
0.0
0.5
1.0
1.5
25 °C
50 °C
70 °C
IF - LED Current (mA)
NCTRcb - Normalized CTRcb
0.1 1 10 100
Normalized to:
VCB = 9.3 V, IF = 10 mA, TA = 25 °C
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 81864
5Rev. 1.0, 11-Mar-08
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
Fig. 9 - Normalized Photocurrent vs. IF and Temperature
Fig. 10 - Normalized Non-Saturated hFE vs.
Base Current and Temperature
Fig. 11 - Normalized hFE vs. Base Current and Temperature
Fig. 12 - Propagation Delay vs. Collector Load Resistor
Fig. 13 - Switching Timing
Fig. 14 - Switching Schematic
i4n25_09
0.
0.01
1
1
10
IF - LED Current (mA)
Normalized Photocurrent
0.1 1 10 100
IF = 10 mA, TA = 25 °C
Nib, TA = - 20 °C
Normalized to:
Nib, TA = 20 °C
Nib, TA = 50 °C
Nib, TA = 70 °C
i4n25_10
0.4
0.6
1.0
1.2
Ib - Base Current (µA)
1101001000
IB = 20 µA, VCE = 10 V,
TA = 25 °C
25 °C
70 °C
- 20 °C
NHFE - Normalized HFE
0.8
Normalized to:
i4n25_11
0.0
0.5
1.0
1.5
25 °C
- 20 °C
50 °C
70 °C
NHFE(sat) - Normalized Saturated HFE
1 10 100 1000
VCE = 10 V, Ib = 20 µA
TA = 25 °C
VCE = 0.4 V
Ib - Base Current (µA)
Normalized to:
i4n25_12
1
10
100
1000
RL - Collector Load Resistor (kΩ)
tPLH- Propagation Delay (µs)
2.5
2.0
1.5
1.0
0.1 1 10 100
IF = 10 mA, TA = 25 °C
VCC = 5.0 V, Vth = 1.5 V
tPLH
tPHL
tPHL - Propagation Delay (µs)
i4n25_13
I
F
t
R
= 1.5 V
V
O
t
D
t
S
t
F
t
PHL
t
PLH
V
TH
i4n25_14
V
CC
= 5.0 V
F = 10 kHz
DF = 50 %R
L
V
O
I
F
= 10 mA
Document Number: 81864 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.0, 11-Mar-08 6
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Optocoupler, Phototransistor Output,
with Base Connection Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
For 4N25/26/27..... see DIL300-6 Package dimension in the Package Section.
For 4N28 and for products with an option designator (e.g. 4N25-X001 or 4N26-X007)..... see DIP-6 Package dimensions in the
Package Section.
DIL300-6 Package Dimensions
DIP-6 Package Dimensions
14770
6.4 max.
7.62 ± 0.1
B
0.4 B
technical drawings
according to DIN
specifications
Weight: ca. 0.50 g
Creepage distance: > 6 mm
Air path: > 6 mm
after mounting on PC board
1 2 3
6 5 4
8.8 max.
8.6 max.
1.54
4.2 ± 0.1
2.54 nom.
5.08 nom.
0.58 max.
3.3
0.5 min.
0.3 A
A
9 ± 0.6
0.3 max.
i178004
0.010 (0.25)
typ.
0.114 (2.90)
0.130 (3.0)
0.130 (3.30)
0.150 (3.81)
0.031 (0.80) min.
0.300 (7.62)
typ.
0.031 (0.80)
0.035 (0.90)
0.100 (2.54) typ.
0.039
(1.00)
min.
0.018 (0.45)
0.022 (0.55)
0.048
0.022 (0.55)
0.248 (6.30)
0.256 (6.50)
0.335 (8.50)
0.343 (8.70)
Pin one ID
6
5
4
12
3
18°
3° to 9°
0.300 to 0.347
(7.62 to 8.81)
typ.
ISO method A
(0.45)
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 81864
7Rev. 1.0, 11-Mar-08
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
min.
0.315 (8.00)
0.020 (0.51 )
0.040 (1.02 )
0.300 (7.62)
ref.
0.375 (9.53)
0.395 (10.03 )
0.012 (0.30 ) typ.
0.0040 (0.102)
0.0098(0.249)
15° max.
Option 9
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
0.307 (7.8)
0.291 (7.4)
0.407 (10.36)
0.391 (9.96)
Option 6
0.315 (8.0)
min.
0.300 (7.62)
typ.
0.180(4.6)
0.160 (4.1)
0.331 (8.4)
min.
0.406 (10.3)
max.
0.028(0.7)
Option 7
18450
Document Number: 81864 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.0, 11-Mar-08 8
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Optocoupler, Phototransistor Output,
with Base Connection Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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