Document Number: 86005 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 105
Fast Avalanche Sinterglass Diode
BY268, BY269
Vishay Semiconductors
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
• High voltage fast rectification diode
949539
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BY268 VR = 1400 V; IFAV = 0.8 A SOD-57
BY269 VR = 1600 V; IFAV = 0.8 A SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Peak reverse voltage, non repetitive BY268 VRSM 1600 V
BY269 VRSM 1800 V
Reverse voltage See electrical characteristics BY268 VR1400 V
BY269 VR1600 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 20 A
Average forward current IFAV 0.8 A
Non repetitive reverse avalanche
energy I(BR)R = 0.4 A ER10 mJ
Junction and storage temperature
range Tj = Tstg - 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 45 K/W
On PC board with spacing 25 mm RthJA 100 K/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86005
106 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 25-Aug-10
BY268, BY269
Vishay Semiconductors Fast Avalanche Sinterglass Diode
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 0.4 A VF--1.25V
Reverse current
VR = 1400 V BY268 IR-12μA
VR = 1600 V BY269 IR-12μA
VR= 1400 V, Tj = 100 °C BY268 IR- - 15 μA
VR= 1600 V, Tj = 100 °C BY269 IR- - 15 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 400 ns
0 5 10 15 20 25 30
0
20
40
60
80
120
RthJA - Thermal Resist. Junction/Ambeint (K/W)
I - Lead Length (mm)
949090
100
ll
TL= constant
IF - Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1.0 1.5 2.0 2.5
VF - Forward Voltage (V)
16412
T
j
= 25 °C
T
j
= 175 °C
16413
I
FAV
- Average Forward Current (A)
0 20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
0.9
0.7
0.5
0.8
0.6
0.4
0.3
0.2
0.1
0
V
R
= V
RRM
half sinewave
R
thJA
= 100 K/W
PCB: d = 25 mm
R
thJA
= 45 K/W
I = 10 mm
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16414
I
R
- Reverse Current (μA)
V
R
= V
RRM
BY268, BY269
Fast Avalanche Sinterglass Diode Vishay Semiconductors
Document Number: 86005 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 107
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
100
500
200
600
300
700
400
800
900
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16415
P
R
- Reverse Power Dissipation (mW)
V
R
= V
RRM
P
R
-Limit
at 100 % V
R
P
R
-Limit
at 80 % V
R
0
5
10
15
20
25
30
35
0.1 1 10 100
VR - Reverse Voltage (V)
16416
CD - Diode Capacitance (pF)
f = 1 MHz
20543
3.6 (0.142) max.
26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
0.82 (0.032) max.
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Revision: 12-Mar-12 1Document Number: 91000
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