SIEMENS BRT 21, BRT 22, BRT 23 SITAC AC Switches Without Zero Voltage Switch e AC switch without zero-voltage detector e Electrically insulated between input and output circuit Microcomputer-compatible by very ow trigger current UL-tested (file no. E 52744), code letter J" e Available with the following options: Option 1: VDE 0884-approved Option 6: Option 7: Pins in 10.16 mm spacing Pins for sourface mounting VPDOSO22 Type Opt. |Vopm |Aams |r |dwdt, Marking | Odering Code BRT 21H |- 400V |300mA |2mA | 10kV/is | BRT 21H |C67079-A1020-A6 BRT 21H |1+6 |400V |300mA |2mA |10kV/is |BRT 21H |C67079-A1050-A16 BRT 22H |- 600V | 300mA |2mA | 10kV/is | BRT 22H | C67079-A1021-A6 BRT 22H |1 600V | 300mA |2mA | 10kV/us | BRT 22H |C67079-A1051-A5 BRT 22H |7 600V |300mA |2mA | 10kV/us | BRT 22H | C67079-A1051-A11 BRT 22H |1+6 |600V |300mA [2mA |10kV/us | BRT 22H |C67079-A1051-A16 BRT 22H |1+7 |600V |300mA [2mA | 10kV/us | BRT 22H | C67079-A1051-A17 BRT 22 M | - 600V | 300mA |3mA | 10kV/us | BRT 22M | C67079-A1021-A10 BRT 22 M | 1 600V | 300mA |3mA | 10kV/s | BRT 22M | C67079-A1051-A6 BRT 23H |- 800V |300mA |2mA | 10kV/us | BRT 23H | C67079-A1022-A6 BRT 23H |6 B00V | 300mA [2mA | 10kV/us | BRT 23H | C67079-A1052-A8 BRT 23H |7 800V |300mA |2mA | 10kV/us | BRT 23H |C67079-A1052-A11 BAT 23H |1+6 |800V |300mA |2mA | 10KV/Is | BRT 23H | C67079-A1052-A14 BRT 23 M | - 800 V | 300mA | 3mA | 10kV/us | BRT 23M | C67079-A1022-A10 Information Package Pin Configuration 1 2 3 4 5 6 50 pes per tube | P-DIP-6 | Anode | Kathode | not Ai do not A2 connected connect Semiconductor Group 596 09.96SIEMENS BRT 21, BRT 22, BRT 23 Maximum Ratings, at 7 = 25 C, unless otherwise specified. AC Switch Parameter Symbol Value Unit Max. Power dissipation Prot 630 mw Chip or operating temperature 7 -40 ...4 100 C Storage temperature Tetg -40 ...+ 150 Insulation test voltage 1) Vis 300 Vamos between input/output circuit (climate in acc. with DIN 40 046, part 2, Nov. 74) Reference voltage in acc. with VDE 0110 b Viet 500 Vams (insulation group C) 600 Voc Creepage tracking resistance Cr; 175 (group Illa (in acc. with DIN IEC 112/VDE 0303, part 1) acc. to Di VDE 0109 Insulation resistance Ris Q Vio = 500 V, Ta = 25C 210 10 = 500 V, Ta = 100 C >101! DIN humidity category, DIN 40 040 F Creepage distance (input/output circuit) - 27.2 mm Clearance (input/output circuit) - 27.2 Input Circuit Parameter Symbol Value Unit Param VR Vp 6 Vv Continuous forward current ir 20 mA Surge forward current, fesmu) 15 A Max. power dissipation, f < 10 ys Prot 30 mw Output Circuit Parameter Symbol! | BRT | BRT | BRT | Unit 21 22 23 Repetitive peak off-state voltage Vorm 400 |600 | 800 |v RMS on-state current Hrus | 300 mA Single cycle surge current (50 Hz) Asm() 3 A Max. power dissipation Prot 600 mw Semiconductor Group 597tt eNO RET ERE TERT came SIEMENS BRT 21, BRT 22, BRT 23 Characteristics at Tj = 25 C, unless otherwise specified. Input Circuit Parameter Symbol Values Unit min. | typ. | max. Forward Voltage, f/ = 10 mA Ve - 1.1.) 1.35 7V Reverse current, Va =6V Ip - - 10 [pA Thermal resistance 1) Finda - - 750 | K/W junction - ambient Output Circuit Parameter Symbol Values Unit min. | typ. | max. Critical rate of rise of off-state voltage dwdt, kV/us Vp = 0.67 Vorm T,= 25C 10 | - - 7j,= 80C 5 - - Critical rate of rise of voltage at current dvidirg commutation Vp = 0.67 Vor, didicrg = 15 A/ms T=25C 10} - - T= 80C 5 - - Critical rate of rise of on-state current did&, 8 - - | Alus Pulse current hp - - 2 1A 6 =5HS, f= 100, dip/dt=8 A/us On-state voltage, 4 = 300 mA Vy - - 2.3 |V Reverse current, Vorn lb pA T= 25 C - 7 30 T= 80C - 12 | 100 Holdin current, Vp = 10 V hy 80 | 500 Thermal resistance 2) Ainga - - | 125 | K/W junction - ambient Semiconductor Group 598SIEMENS BRT 21, BRT 22, BRT 23 Response Characteristics at 7, = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. Trigger current 1 lev1 mA Vp=6V type H 0.4 - 2.0 type M 0.4 - 3.0 Trigger current 2 lero Vop = 220 V, f= 50 Hz, Fj = 100 C hF > 10 ms type H - - 6.0 type M - - 9.0 Trigger current temperature gradient AleqV/ATj | - 7 14 | pAK AletofAT; Inhibit voltage, fe = iey4 VbINH - 8 12 |v Inhibit voltage temperature gradient Vb - -20 - |mvVK Off-state current in inhibit state foINH 200 | yA f= fet1; VoRM 7 | 50 Capacitance between input and output circuit Cio ~ - 2.0 | pF Va = 0, f= 1kHz 1)Static air, SITAC soldered in pcb or base plate. 2) Test AC voltage in acc. with DIN 57883, June 1980. 3) The SITAC zero voltage switch can be triggered only in the hatched area below the Fj curves 4) The SITAC switch is soldered in pcb or base plate. 5) Thermocouple measurement has to be performed potentially separated to A1 and A2. The measuring junction should be as near as possible at the case. Semiconductor Group 599SIEMENS BRT 21, BRT 22, BRT 23 Package Outline P-DIP-6 6 4 GP005022 { Q.15max 1) Clearance/creepage distance 7.5.0.2 7 7.2min for SIPMOS Devices index Marking 2) 8.792 for SIPMOS Devices Option 6 + 8lgpp x 7.894 pe wy [Lin | ah65 9 ote -( & 02 i| Jie 3 wa E, ba _ oe TIT [st Yd | 3 0.457 8 | ors" ey a! 10.1620.2 be GPDOS355 -Clearance~/creepage distance 8.0 min. Option 7 =) B.7.92 7 7.62 fp =~ He Hy 6.5 gate tits lb Lye oS o 2 = i -et B.Omin he 0.45.94 . || 0.4min >! 84min} 2.54 1 10.3max |= CPDDS3S6 -Clearance-/creepage distonce 8.0 min. Dimensions in mm Clearance and creepage distances must be taken into account for the solder powl design. Semiconductor Group 600SIEMENS BRT 21, BRT 22, BRT 23 Characteristics at Tj = 25C, unless otherwise specified. Typical input characteristics fe = f(Ve) 192 OL" sicao001 ty oma | 10"! 0.9 1.0 1 42 Current reduction Armays = f(Ta) Pinga = 125 KAW 9) Rae '25 K/W) 0 20 40 60 80 C 100 + |, Semiconductor Group Typical output characteristics f= f(y) 193 RE sico0o02 tt oma 107 5 10 5 10 0 1 2 3 .oVvO4 . Current reduction Arras = f(7pins) PRiy-pins = 16,5 KW Raueren= 16.5 6/8) 400 f TS a 300 200 100 0 30 60 70 80 90 C 100 ~ Tons 601SIEMENS BRT 21, BRT 22, BRT 23 Typ trigger delay time ig = f( iF / fFT25 C) Vb = 200 V 193 ORT 2/2225 $i00008 gd i BS be 10! 3 1 5 10 5 10 = Ie/ Irrase Power dissipation Aict = f( rams) for 40 ... 60 Hz line operation BRT 21/22/23 SHC00011 | 05 7 0.4 7 0.2 A 0.1 SAA + 0.0 0 100 200 mA 300 ied Treus Semiconductor Group Typ. inhibit current finn = f(//feT25C) Vp = 800 V SIC00010 0 2 4 6 8 10 12 14 16 18 20 > A/Trrasec Typ. static inhibit voltage limit 2) VoinHmin = f(/F/feresec), parameter: Tj BRT sicooot2 12 Vonitenin v 10 9 8 t 5 10 5 10? w fi Tprasec 602