CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
November 2009
CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M, MOC8107M
Phototransistor Optocouplers
Features
■
UL recognized (File # E90700, Vol. 2)
■
VDE recognized
– Add option V (e.g., CNY17F2VM)
– File #102497
■
Current transfer ratio in select groups
■
High BV
CEO
: 70V minimum (CNY17XM, CNY17FXM,
MOC810XM)
■
Closely matched current transfer ratio (CTR)
minimizes unit-to-unit variation.
■
Very low coupled capacitance along with no chip to
pin 6 base connection for minimum noise
susceptability (CNY17FXM, MOC810XM)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
■
Appliance sensor systems
■
Industrial controls
Description
The CNY17XM, CNY17FXM and MOC810XM devices
consist of a Gallium Arsenide IRED coupled with an NPN
phototransistor in a dual in-line package.
Schematics
CNY17F1M/2M/3M/4M
MOC8106M/7M
CNY171M/2M/3M/4M
1
2
6
5 COLLECTOR COLLECTOR
4 EMITTERNC NC
NC
ANODE
CATHODE
3
1
2
6
5
4 EMITTER
BASE
ANODE
CATHODE
3
Package Outlines
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 2
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameters Value Units
TOTAL DEVICE
T
STG
Storage Temperature -40 to +150 °C
T
OPR
Operating Temperature -40 to +100 °C
T
J
Junction Temperature -40 to +125 ºC
T
SOL
Lead Solder Temperature 260 for 10 sec °C
P
D
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
250 mW
2.94 mW/°C
EMITTER
I
F
Continuous Forward Current 60 mA
V
R
Reverse Voltage 6 V
I
F
(pk) Forward Current – Peak (1µs pulse, 300pps) 1.5 A
P
D
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
120 mW
1.41 mW/°C
DETECTOR
I
C
Continuous Collector Current 50 mA
V
CEO
Collector-Emitter Voltage 70 V
V
ECO
Emitter Collector Voltage 7 V
P
D
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
150 mW
1.76 mW/°C
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 3
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
(1)
Individual Component Characteristics
Isolation Characteristics
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
(3)
*All typicals at T
A
= 25°C
Symbol Parameters Test Conditions Device Min. Typ. Max. Units
EMITTER
V
F
Input Forward Voltage I
F
= 60mA CNY17XM,
CNY17FXM
1.0 1.35 1.65 V
I
F
= 10mA MOC810XM 1.0 1.15 1.50
C
J
Capacitance V
F
= 0 V, f = 1.0MHz All 18 pF
I
R
Reverse Leakage
Current
V
R
= 6V All 0.001 10 µA
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter I
C
= 1.0mA, I
F
= 0 All 70 100 V
BV
CBO
Collector to Base I
C
= 10µA, I
F
= 0 CNY171M/2M/3M/4M 70 120
BV
ECO
Emitter to Collector I
E
= 100µA, I
F
= 0 All 7 10
I
CEO
Leakage Current
Collector to Emitter V
CE
= 10 V, I
F
= 0 All 1 50 nA
I
CBO
Collector to Base V
CB
= 10 V, I
F
= 0 CNY171M/2M/3M/4M 20 nA
C
CE
Capacitance
Collector to Emitter V
CE
= 0, f = 1MHz All 8 pF
C
CB
Collector to Base V
CB
= 0, f = 1MHz CNY171M/2M/3M/4M 20 pF
C
EB
Emitter to Base V
EB
= 0, f = 1MHz CNY171M/2M/3M/4M 10 pF
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage f = 60 Hz, t = 1 sec.,
I
I-O
≤
2µA
(4)
7500 Vac(pk)
R
ISO
Isolation Resistance V
I-O
= 500 VDC
(4)
10
11
Ω
C
ISO
Isolation Capacitance V
I-O
= Ø, f = 1MHz
(4)
0.2 pF
Symbol DC Characteristics Test Conditions Min. Typ.* Max. Units
COUPLED
(CTR)
(2)
Output Collector
Current
MOC8106M I
F
= 10mA, V
CE
= 10V 50 150 %
MOC8107M 100 300
CNY17F1M I
F
= 10mA, V
CE
= 5V 40 80
CNY17F2M 63 125
CNY17F3M 100 200
CNY17F4M 160 320
CNY171M 40 80
CNY172M 63 125
CNY173M 100 200
CNY174M 160 320
V
CE(sat)
Collector-Emitter
Saturation Voltage
CNY17XM/FXM I
C
= 2.5mA, I
F
= 10mA 0.4 V
MOC8106M/7M I
C
= 500µA, I
F
= 5.0mA
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 4
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Electrical Characteristics
(Continued) (T
A
= 25°C Unless otherwise specified.)
(1)
Transfer Characteristics
(Continued)
(3)
*All typicals at T
A
= 25°C
Notes:
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
3. For test circuit setup and waveforms, refer to Figures 10 and 11.
4. For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common.
Symbol AC Characteristics
(4)
Test Conditions Min. Typ.* Max. Units
NON-SATURATED SWITCHING TIME
t
on
Turn-On Time All Devices I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
210µs
t
off
Turn-Off Time All Devices I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
310µs
t
d
Delay Time CNY17XM/XFM I
F
= 10mA, V
CC
= 5V, R
L
= 75
Ω
5.6 µs
t
r
Rise Time All Devices I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
1µs
CNY17XM/FXM IF = 10mA, VCC = 5V, RL = 75Ω4.0
tsStorage Time CNY17XM/FXM IF = 10mA, VCC = 5V, RL = 75Ω4.1 µs
tfFall Time All Devices IC = 2.0mA, VCC = 10V, RL = 100Ω2µs
CNY17XM/FXM IF = 10mA, VCC = 5V, RL = 75Ω3.5
SATURATED SWITCHING TIMES
ton Turn-on Time CNY171M/F1M IF = 20mA, VCC = 5V, RL = 1kΩ5.5 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
IF = 10mA, VCC = 5V, RL = 1kΩ8.0
trRise Time CNY171M/F1M IF = 20mA, VCC = 5V, RL = 1kΩ4.0 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
IF = 10mA, VCC = 5V, RL = 1kΩ6.0
tdDelay Time CNY171M/F1M IF = 20mA, VCC = 5V, RL = 1kΩ5.5 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
IF = 10mA, VCC = 5V, RL = 1kΩ8.0
toff Turn-off Time CNY171M/F1M IF = 20mA, VCE = 0.4V 34 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
IF = 10mA, VCE = 0.4V 39
tfFall Time CNY171M/F1M IF = 20mA, VCC = 5V, RL = 1kΩ20.0 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
IF = 10mA, VCC = 5V, RL = 1kΩ24.0
tsStorage Time CNY171M/F1M IF = 20mA, VCC = 5V, RL = 1kΩ34.0 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
IF = 10mA, VCC = 5V, RL = 1kΩ39.0
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 5
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms I-IV
For Rated Main voltage < 300Vrms I-IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
VPR Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594 Vpeak
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275 Vpeak
VIORM Max. Working Insulation Voltage Vpeak 850 Vpeak
VIOTM Highest Allowable Over Voltage Vpeak 6000 Vpeak
External Creepage 7 mm
External Clearance 7 mm
Insulation Thickness 0.5 mm
RIO Insulation Resistance at Ts, VIO = 500V 109Ω
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 6
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Typical Performance Characteristics
Fig. 1 Normalized CTR vs. Forward Current
IF – FORWARD CURRENT (mA)
02468101214161820
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 5.0V
TA = 25˚C
Normalized to
IF = 10mA
Fig. 2 Normalized CTR vs. Ambient Temperature
TA – AMBIENT TEMPERATURE (˚C)
-60 -40 -20 020 40 60 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5mA
IF = 10mA
IF = 20mA
Normalized to:
IF = 10mA
TA = 25˚C
Fig. 3 CTR vs. RBE (Unsaturated)
RBE – BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 5.0V
IF = 20mA
IF = 10mA IF = 5mA
Fig. 4 CTR vs. RBE (Saturated)
SWITCHING SPEED (µs)
Fig. 5 Switching Speed vs. Load Resistor
R – LOAD RESISTOR (kΩ)
0.1 1 10 100
0.1
1
10
100
1000
Toff
Ton
Tf
IF = 10mA
VCC = 10V
TA = 25˚C
Tr
RBE – BASE RESISTANCE (kΩ)
RBE – BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20mA
IF = 10mA
IF = 5mA
VCE = 0.3V
NORMALIZED t
on
– (t
on(RBE)
/ t
on(open)
)
Fig. 6 Normalized ton vs. RBE
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC = 10V
IC = 2mA
RL = 100Ω
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 7
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Typical Performance Characteristics (Continued)
Figure 10. Switching Time Test Circuit Figure 11. Switching Time Waveforms
10 100 1000 10000 100000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VCC = 10V
IC = 2mA
RL = 100Ω
NORMALIZED t
off
– (t
off(R
BE
)
/ t
off(open)
)
RBE – BASE RESISTANCE (k Ω)
Fig. 7 Normalized toff vs. RBE
IF – LED FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (V)
Fig. 8 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 25°C
TA = -55°C
TA = 100°C
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
IF = 5mA
IF = 20mA
IF = 10mA
Fig. 9 Collector-Emitter Saturation Voltage vs Collector Current
IC - COLLECTOR CURRENT (mA)
VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)
IF = 2.5mA
TA = 25
˚C
RL
IFIC
VCC
OUTPUT (VCE)INPUT
INPUT PULSE
OUTPUT PULSE
ton toff
tr
td
tf
ts
10%
90%
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 8
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Package Dimensions
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
7.62 (Typ.)
15° (Typ.)
0.20–0.30
0.20–0.30
10.16–10.80
Through Hole 0.4" Lead Spacing
Surface Mount
Rcommended Pad Layout
(1.78)
(2.54)
(1.52)
(7.49)
(10.54)
(0.76)
8.13–8.89
Note:
All dimensions in mm.
6.10–6.60
8.43–9.90
Pin 1
64
13
0.25–0.36
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
0.38 (Min.)
3.28–3.53
5.08
(Max.) 0.20–0.30
0.16–0.88
(8.13)
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 9
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Ordering Information
Marking Information
Option
Order Entry Identifier
(Example) Description
No option CNY171M Standard Through Hole Device
S CNY171SM Surface Mount Lead Bend
SR2 CNY171SR2M Surface Mount; Tape and Reel
T CNY171TM 0.4" Lead Spacing
V CNY171VM IEC60747-5-2
TV CNY171TVM IEC60747-5-2, 0.4" Lead Spacing
SV CNY171SVM IEC60747-5-2, Surface Mount
SR2V CNY171SR2VM IEC60747-5-2, Surface Mount, Tape and Reel
CNY17-1
1
2
6
43 5
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘7’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
V X YY
Q
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 10
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Carrier Tape Specification
Reflow Profile
4.0 ± 0.1
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
24.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
21.0 ± 0.1
4.5 ± 0.20
0.1 MAX 10.1 ± 0.20
9.1 ± 0.20
Ø1.5 ± 0.1/-0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
360
1.822°C/Sec Ramp up rate
33 Sec
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 11
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intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
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CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
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Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter®*
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
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and (c) whose failure to perform when properly used in accordance
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
First Production
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
