SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. 1$$193 Unit in mm FEATURES: astaa - ae Small Package SOT-23M0D ietaie Low Forward Voltage : Vp=0.9V(Typ.) rH { 3a - , +1 . Fast Reverse Recovery Time trr=l.6ns (Typ. ) 2 S| 2 3 3 3 Small Total Capacitance Crt=0.9pF (Typ. ) By o o of a 3 3 1 1 7 4 338 Qe | +i MAXIMUM RATINGS (Ta=25C) $7 ! 4 3 CHARACTERISTIC SYMBOL RATING UNIT fF | r a Maximum (Peak) Reverse Voltage VRM 85 Vv 5 2 OQ R Volt Vv 80 Vv everse Voltage R yah Maximum (Peak) Forward Current Ip 300 mA ic Average Forward Current Io 100 mA LNA, Surge Current (1Oms) TFSM 2 A 2. ANODE 3 CATHODE Power Dissipation P 150 mW - > JRDRC - Junction Temperature Tj 125 c RIAl SC59 Storage Temperature Range Tstg -55 ~125 C TOSHIBA 1-301B Weight Q.012g ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Vr(i) | Ir=lma - |0.60 | ~ Forward Voltage VF(2) Ip=lOmA - 10.72 ~ V VF(3) ITp=100mA - 0.90 {1.20 Reverse Current Ip Vp=80V - - 0.5 na Total Capacitance Cy Vp=0, =1MHz - 0.9 3.0 pF f Reverse Recovery Time trr If=10mA, Fig.1 - 1.6 4.0 ns Marking oil a1$S193 Tr ~ Vr IR VR < 2 g EY fs ow HH he | al u a a g a E z oD oO a a os) "2 = EI Ta=25C a > O i<3} fe ina 0 20 40 60 80 a2 a4 6 as 10 L2 REVERSE VOLTAGE Vp (Vv) FORWARD VOLTAGE Vp (Vv) Cr VR os 50 a Ta=28C my # ~ f= 1 Miz g 30 Ww & & E10 ff qq D ced od RR Ow 5 4 el Q Mb 3 i mb < a a > 2 a l a oO By 05 OR 1 3 10 30 100 200 al a3 1 3 10 30 50 REVERSE VOLTAGE Vp (V) FORWARD CURRENT Ip (mA) Fig. 1. REVERSE RECOVERY TIME (ty,;) TEST CIRCUIT INPUT 3 OUTPUT WAVEFO WAVEFORM Iwpur a01aF DUT UTPUT WAVEFORM 0 OUTPUT 3 G Tp=loma 1 ~6V a a % SAMPLING 0 4 o Cc yOl Ip 3 c OSCILLOSCOPE wn E (Ryy=500) IR 50ne PULSE GENERATOR (Rour=500) tr 1130