SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR30100CT
MBRB30100CT
MBR30100CT-1
Technical Data
Data Sheet 2928, Rev.C
MBR30100CT/MBRB30100CT/MBR30100CT-1
SCHOTTKY RECTIFIER
Applications:
•
••
• Switching power suppl y •
••
• Conve rt ers •
••
• Free-Wheeling diodes •
••
• Reverse battery protection
Features:
• 150 °
°°
°C TJ operation
• Cent e r tap conf iguration
• Low forwar d voltage dr op
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• Hig h fr e quenc y operation
• Guard ring for enhanced ruggedness and long term reliability
Mechanical Dimensions: In Inches / mm
TO-220AB
Case styles
MBR30100CT
TO-220AB
MBRB30100CT
D2PAK
MBR30100CT-1
TO-262
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR30100CT
MBRB30100CT
MBR30100CT-1
Data Sheet 2928, Rev. C
D2PAK
1.17(0.046)
1.37(0.054)
1.30(0.051)
1.70(0.067)
10.16(0.400)
REF.
15.49(0.610)
14.73(0.580)
1.40(0.055)
1.14(0.045)
3
×
8.90(0.350)
8.50(0.335)
2
×
0.93(0.037)
0.69(0.027)
4.69(0.185)
4.20(0.165)
1.32(0.052)
1.22(0.048)
5.28(0.208)
4.78(0.188)
5.08(0.200)REF.
0.55(0.022)
0.46(0.018)
BASE
COMMON
CATHODE
ANODE 1 ANODE 2
CATHODE
COMMON
TO-262
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR30100CT
MBRB30100CT
MBR30100CT-1
Data Sheet 2928, Rev. C
Maximum Ratings:
Characteristics Symbol Condition Max. Units
Peak Inverse Voltage VRWM - 100 V
Max. Average Forward IF(AV) 50% duty cycle @TC = 133°C,
rectangular wave form 30 A
Peak Repetitive Forward
Current(per leg) IFRM Rated VR square w av e,
20KHz TC = 133°C 20 A
Max. Peak One Cycle Non-
Repetiti ve Surge Current
(per leg)
IFSM Surge applied at rated load
conditions halfwave, single
phase,60Hz
150
A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop
(per leg) * VF1 @ 15 A, Pulse, TJ = 25 °C
@ 30 A, Pulse, TJ = 25 °C 0.85
1.05 V
V
F2 @ 15 A, Pul se, TJ = 125 °C
@ 30 A, Pulse, TJ = 125 °C 0.70
0.85 V
Max. Reverse Current (per
leg) * IR1 @VR = rated VR
TJ = 25 °C 1.00 mA
I
R2 @VR = rated VR
TJ = 125 °C 6.0 mA
Max. Junction Capacitance
(per leg) CT @VR = 5V, TC = 25 °C
fSIG = 1MHz 400 pF
Typica l Series Inductance
(per leg) LS Measured lead to lead 5 mm from
package body 8.0 nH
Max. Voltage Rate of Change dv/dt - 10,000 V/µs
* Pulse Width < 300µs, Duty Cycle <2%
Thermal -Mec hanic al Spe cif ica tions:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature TJ - -55 to +150
°C
Max. Storage Temperature Tstg - -55 to +150
°C
Maximum Thermal
Resistance Junction to Case
RθJC DC operation 2.0 °C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθJA DC operation 50 °C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS Mounting surface,
smooth and greased 0.50 °C/W
Approximate Weight wt - 2 g
Mounting Torque TM - 6(Min.)
12(Max.) Kg-cm
Case Style TO-220AB D2PAK TO-262
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR30100CT
MBRB30100CT
MBR30100CT-1
Data Sheet 2928, Rev. C
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet (s) .
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipm ent ,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users ’ f ail-s a fe precaut ions or other arrangem ent .
3- In no event shall Sensitr on Sem i conduc t or be liable for any damages that may result from an acc i dent or any other cause during
operation of the user’s unit s acc ordi ng to the datas heet( s ). Sens i tr on Semi c onduc t or ass um es no respons i bil i ty for any intell ectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting
from us e at a value exceeding the absolute m aximum rat i ng.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) m ay not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permiss i on of
Sensit ron S em i conduc tor .
7- The products (tec hnolo gies) descr ibed in the datas heet( s) are not to be provided to any party whose purpose in their application will
hinder maint enanc e of int ernat ional peac e and safety nor are they to be applied to that purpose by their direct purcha s ers or any third
party. When exporting these products (t echnologi es ), the nec ess ary procedures are to be taken in accor dance with related laws and
regulations.
