TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 5 May 2009
AG303-86
InGaP HBT Gain Block
Product Features
• DC – 6000 MHz
• 20.5 dB Gain @ 900 MHz
• +14 dBm P1dB @ 900 MHz
• +26 dBm OIP3 @ 900 MHz
• Single Voltage Supply
• Internally matched to 50 Ω
• Robust 1000V ESD, Class 1C
• Lead-free/RoHS-compliant SOT-
86 package
Applications
• Mobile Infrastru cture
• CATV / FTTX
• WLAN / ISM
• RFID
• WiMAX / WiBro
Product Description
The AG303-86 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG303-86 typically provides
20.5 dB gain, +26 dBm OIP3, and +14 dBm P1dB. The
device combines dependable performance with consistent
quality to maintain MTTF values exceeding 1000 years at
mounting temperatures of +85 °C and is housed in a lead-
free/RoHS-compliant SOT-86 (micro-X) industry-standard
SMT package.
The AG303-86 consists of a Darlington-pair amplifier
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG303-86 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and WiMAX.
Functional Diagram
Function Pin No.
Input 1
Output/Bias 3
Ground 2, 4
Specifications (1)
Parameter Units Min Typ Max
Operational Bandwidth MHz DC 6000
Test Frequency MHz 900
Gain dB 20.4
Input Return Loss dB 22
Output Return Loss dB 20
Output P1dB dBm +14
Output IP3 (2) dBm +26.1
Output IP2 dBm +34
Noise Figure dB 3
Test Frequency MHz 1900
Gain dB 16.9 18.1 18.9
Output P1dB dBm +12.7
Output IP3 (2) dBm +24.8
Device Voltage V 4.23
Device Current mA 35
1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Rbias = 22.1 Ω, 50 Ω System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Storage Temperature -55 to +125 °C
DC Voltage +5 V
RF Input Power (continuous) +10 dBm
Thermal Resistance, Rth 335°C/W
Junction Temperature +177°C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameter Units Typical
Frequency MHz 500 900 1900 2140
S21 dB 21.1 20.4 18.1 17.5
S11 dB -21 -22 -26 -25
S22 dB -22 -20 -16 -16
Output P1dB dBm +14.0 +14.0 +12.7 +12.4
Output IP3 dBm +26.4 +26.1 +24.8 +24.4
Noise Figure dB 2.9 3.0 3.2 3.2
Ordering Information
Part No. Description
AG303-86G InGaP HBT Gain Block
(lead-free/RoHS-compliant SOT-86 Package)
AG303-86PCB 700 – 2400 MHz Fully Assembled Eval. Board
Standard tape / reel size = 3000 pieces on a 13” reel
RF OutRF In
GND
GND
1
2
3
4
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 2 of 5 May 2009
AG303-86
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 22.1 Ω, Icc = 35 mA
Frequency MHz 100 500 900 1900 2140 2400 3500 5800
S21 dB 21.4 21.1 20.4 18.1 17.5 16.9 14.9 11.4
S11 dB -25 -21 -22 -26 -25 -25 -25 -25
S22 dB -19 -22 -20 -16 -16 -15 -15 -14
Output P1dB dBm +14.2 +14.0 +14.0 +12.7 +12.4 +12.1 +9.3
Output IP3 dBm +26.5 +26.4 +26.1 +24.8 +24.4 +23.9
Noise Figure dB 2.9 2.9 3.0 3.2 3.2 3.2
1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 Ω, Icc = 35 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
12
14
16
18
20
22
24
01234
Frequency (GHz)
Gain
(
dB
)
-40 C +25 C +85 C
Return Loss
-40
-30
-20
-10
0
0123456
Frequency (GH z)
S11, S22
(
dB
)
S11 S22
I-V Cu r v e
0
10
20
30
40
50
60
3.0 3.5 4.0 4.5
D evice V oltage (V)
Device Current
(
mA
)
O ptim al operating point
O utput IP3 vs. Frequency
10
15
20
25
30
00.511.522.53
Frequency (G Hz)
OIP3
(
dBm
)
-4 0 C +25 C +85 C
Ou tp ut IP2 v s . Fre qu e n c y
20
25
30
35
40
0 200 400 600 800 1000
Frequency (MH z)
OIP2
(
dBm
)
-40c +25c +85c
Noise Figure vs. Frequency
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
NF
(
dB
)
-40 C +25 C +85 C
P1dB vs. Frequency
0
5
10
15
20
00.511.522.533.54
Frequency (G Hz)
P1dB
(
dBm
)
-4 0 C +25 C +85 C
Output Power / Gain vs. Input Power
frequ ency = 900 MHz
12
14
16
18
20
22
-20 -16 -12 -8 -4 0 4
Inpu t Power (dBm)
Gain
(
dB
)
0
4
8
12
16
20
Out
p
ut Pow er
(
dBm
)
Output Power
Gain
Output Power / Gain vs. Input Power
frequen c y = 2000 MHz
8
10
12
14
16
18
-20 -16 -12 -8 -4 0 4
Inpu t Power (dBm)
Gain
(
dB
)
-4
0
4
8
12
16
Out
p
ut Pow er
(
dBm
)
Output Power
Gain
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 3 of 5 May 2009
AG303-86
InGaP HBT Gain Block
Typical Device RF Performance (cont’d)
Supply Bias = +6 V, Rbias = 51 Ω, Icc = 35 mA
Gain vs. Frequency
12
14
16
18
20
22
24
01234
Frequency (GHz)
Gain
(
dB
)
-40 C +25 C +85 C
O utput IP3 vs. Frequency
10
15
20
25
30
00.511.522.53
Frequency (G Hz)
OIP3
(
dBm
)
-4 0 C +25 C +85 C
O utput IP 2 vs. Frequency
20
25
30
35
40
0 200 400 600 800 1000
Frequency (MH z)
OIP2
(
dBm
)
-40c +25c +85c
P1dB vs. Frequency
0
5
10
15
20
00.511.522.533.54
Frequency (GH z)
P1dB
(
dBm
)
-4 0 C +25 C +85 C
Noise Figure vs. Frequency
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
NF
(
dB
)
-40 C +25 C +85 C
Typical Device RF Performance
Supply Bias = +8 V, Rbias = 108 Ω, Icc = 35 mA
Gain vs. Frequency
12
14
16
18
20
22
24
01234
Frequency (GHz)
Gain
(
dB
)
-40 C +25 C +85 C
O utput IP3 vs. Frequency
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
Frequency (GH z)
OIP3
(
dBm
)
-40 C +25 C +85 C
O utput IP2 vs. Frequency
20
25
30
35
40
0 200 400 600 800 1000
Frequency (MH z)
OIP2
(
dBm
)
-40c +25c +85c
P1dB vs. Frequency
0
5
10
15
20
00.511.522.533.54
Frequency (GH z)
P1dB
(
dBm
)
-4 0 C +25 C +85 C
Noise Figure vs. Frequency
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
NF
(
dB
)
-40 C +25 C +85 C
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 4 of 5 May 2009
AG303-86
InGaP HBT Gain Block
Application Circuit
Recommended Component Values
Reference Frequency (MHz)
Designator 50 500 900 1900 2200 2500 3500
L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH
C1, C2, C4 .018 µF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF
1. The proper values for the c omponents are dependent upon the in tended frequency of operation.
2. The follow ing values are contained on the evalua tion board to achieve opt imal broadband performance:
Ref. Desig. Value / Type Size
L1 39 nH wirewound inductor 0603
C1, C2 56 pF chip capacitor 0603
C3 0.018 μF chip capacitor 0603
C4 Do Not Place
R1 22.1 Ω 1% tolerance 0603
Recommended Bias Resistor Values
Supply
Voltage R1 value Size
5 V 22.1 ohms 0603
6 V 51 ohms 0805
7 V 80 ohms 1206
8 V 108 ohms 1210
9 V 137 ohms 1210
10 V 166 ohms 1210
12 V 223 ohms 2010
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +5 V. A
1% tolerance resistor is recommended.
Typical Device Data
S-Parameters (Vdevice = +4.23 V, ICC = 35 mA, T = 25 °C, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -25.41 -178.61 21.90 177.08 -24.39 2.68 -19.43 -6.66
250 -24.87 155.73 21.78 166.27 -24.78 2.50 -19.45 -23.90
500 -21.45 140.47 21.52 152.92 -24.79 0.95 -22.15 -58.28
750 -21.60 121.87 21.11 140.36 -24.66 -0.65 -20.82 -83.69
1000 -22.37 104.08 20.62 128.55 -24.69 -0.47 -19.91 -103.53
1250 -22.85 90.28 20.09 117.05 -24.39 0.10 -18.42 -120.77
1500 -23.73 71.50 19.48 106.85 -23.69 0.62 -17.78 -130.98
1750 -25.75 49.04 18.90 96.96 -23.87 -1.60 -16.51 -140.18
2000 -25.80 20.48 18.25 87.61 -23.36 -1.98 -16.04 -146.19
2250 -20.60 4.51 17.68 79.42 -23.35 -1.35 -14.44 -135.98
2500 -21.35 -10.34 17.27 73.31 -23.42 -5.50 -14.66 -143.15
2750 -21.07 -27.85 16.73 64.91 -22.38 -6.48 -14.71 -151.02
3000 -20.28 -38.57 16.22 57.01 -22.30 -5.72 -15.40 -161.21
3250 -20.61 -43.39 15.75 49.56 -22.06 -7.56 -16.08 -172.88
3500 -21.43 -46.83 15.30 42.14 -21.79 -9.98 -16.63 172.37
3750 -23.21 -45.68 14.83 34.70 -21.14 -14.32 -16.45 152.74
4000 -25.23 -33.68 14.43 27.45 -21.01 -19.42 -15.95 135.04
4250 -27.97 -14.82 14.02 20.33 -20.54 -19.39 -14.63 121.85
4500 -28.62 21.21 13.56 13.29 -19.99 -23.59 -13.70 110.85
4750 -28.24 50.04 13.16 5.94 -19.74 -27.50 -12.98 104.47
5000 -27.40 61.17 12.84 -0.90 -19.45 -32.13 -12.53 101.02
5250 -32.61 78.84 12.46 -7.21 -19.53 -34.94 -12.98 97.98
5500 -38.22 144.81 12.12 -13.47 -19.19 -37.72 -13.34 99.21
5750 -28.58 -149.36 11.86 -19.80 -18.83 -41.09 -14.62 100.79
6000 -24.71 -137.35 11.61 -26.11 -18.61 -44.88 -15.38 100.73
Device S-parameters are available for download from the website at: http://www.Triquint.com
C1
Blocking
Capacitor
RF OUT
L1
RF Choke
C3
0.018 µF
R1
Bias
Resisto
r
RF IN
C4
Bypass
Capacito
r
C2
Blocking
Ca
acito
Vcc
Icc = 35 m
A
A
G303-86
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 5 of 5 May 2009
AG303-86
InGaP HBT Gain Block
AG303-86G (Lead-free Sot-86 Package) Mechanical Information
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering proces s es . The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Land Pattern
Product Marking
The component will be marked with a “P”
designator followed by a two-digit numeric lot
code on the top surface of the package. The
obsolete tin-lead package is marked with an
“E” designator followed by a two-digit numeric
lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating: Class 1C
Value: Passes ≥ 1000V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes ≥ 1000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection r eflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated thru
diameter of .25 mm (.010”).
2. Add as much copper as possib le to inner and outer layers
near the part to ensure optimal therm al performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. En sure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backsi de of the PC board in
the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.