MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
TYPE
NAME
DESCRIPTION
ML9XX11, ML9XX16 and ML9XX22 series are DFB
(Distributed Feedback) laser diodes emitting light
beam with emission wavelength of 1470 ~ 1610 nm.
They are well suited for light source in long
distance digital transmission application of coarse
WDM.
They are hermetically sealed devices with the photo
diode for optical output monitoring.
APPLICATION
·~1.25Gbps digital transmission system
· Coarse WDM application
FEATURES
· Homogeneous grating (AR/HR facet coating) structure
DFB
·
Wide temperature range operation ( 0 to 85ºC )
· Low threshold current (typical 8mA)
· High speed response (typical 0.1nsec)
· 8 wavelength with 20nm space at 1470 ~ 1610nm
· φ5.6mm TO-CAN package
· Flat window cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
Po Light output power CW 10 mW
If Forward current (Laser diode) --- 150 mA
V
RL
Reverse voltage (Laser diode) --- 2 V
V
RD
Reverse voltage (Photo diode) --- 20 V
I
FD
Forward current (Photo diode) --- 2 mA
Tc Case temperature --- 0 to +85
ºC
Tstg Storage temperature --- -40 to +100
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ]
Symbol Parameter Test conditions Min. Typ. Max. Unit
CW --- 8 15 Ith Threshold current
CW, Tc=85
ºC
--- 30 50 mA
CW, Po=5mW --- 25 40 Iop Operation current
CW, Po=5mW, Tc=85
ºC
--- 60 80 mA
Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V
η Slope efficiency CW, Po=5mW 0.20 0.28 --- mW/mA
λp Peak wavelength CW, Po=5mW <**> nm
θ // Beam divergence angle (parallel) CW, Po=5mW --- 25 35 deg.
θ
┴
Beam divergence angle
(perpendicular) CW, Po=5mW --- 35 45 deg.
SMSR Side mode suppression ratio CW, Po=5mW
Tc= 0 to +85
ºC
35 40 --- dB
tr,tf Rise and Fall time Ib=Ith, 20-80% <*> --- 0.1 0.2 ns
Im Monitoring output current (PD) CW, Po=5mW 0.05 0.2 --- mA
Id Dark current (PD) V
RD
=5V --- --- 0.1 µA
Ct Capacitance (PD) V
RD
=5V --- 10 20 pF
<*> Except influence of the 18mm lead.
ML925B11F / ML925B16F / ML925B22F
ML920J11S / ML920J16S / ML920J22S
ML925J11F / ML925J16F / ML925J22F
ML920L11S / ML920L16S / ML920L22S
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[Aspherical lens cap ; ML925J11F/ML925J16F/ML925J22F/ ML920L11S/ML920L16S/ ML920L22S]
Symbol Parameter Test conditions Min. Typ. Max. Unit
CW --- 8 15 Ith Threshold current
CW, Tc=85
ºC
--- 30 50 mA
CW, Po=5mW --- 25 40 Iop Operation current
CW, Po=5mW, Tc=85
ºC
--- 60 80 mA
Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V
η Slope efficiency CW, Po=5mW 0.20 0.28 --- mW/mA
λp Peak wavelength CW, Po=5mW <**> nm
SMSR Side mode suppression ratio CW, Po=5mW
Tc= 0 to +85
ºC
35 40 --- dB
Pf Fiber coupling power CW, Po=5mW, SMF 1.5 2.0 --- mW
Df Focul length CW, Po=5mW, SMF 6.5 7.5 8.5 mm
tr,tf Rise and Fall time Ib=Ith, 20-80% <*> --- 0.1 0.2 ns
Im Monitoring output current (PD) CW, Po=5mW 0.05 0.2 --- mA
Id Dark current (PD) V
RD
=5V --- --- 0.1 µA
Ct Capacitance (PD) V
RD
=5V --- 10 20 pF
<*> Except influence of the 18mm lead.
<**> Peak wavelength
Limits
Type Symb
ol
Test
condition Min. Typ. Max.
Unit
ML925B16F-04 / ML920J16S-04 / ML925J16F-04 / ML920L16S-04 1467 1470 1473
ML925B16F-05 / ML920J16S-05 / ML925J16F-05 / ML920L16S-05 1487 1490 1493
ML925B11F-04 / ML920J11S-04 / ML925J11F-04 / ML920L11S-04 1507 1510 1513
ML925B11F-05 / ML920J11S-05 / ML925J11F-05 / ML920L11S-05 1527 1530 1533
ML925B11F-06 / ML920J11S-06 / ML925J11F-06 / ML920L11S-06 1547 1550 1553
ML925B22F-04 / ML920J22S-04 / ML925J22F-04 / ML920L22S-04 1567 1570 1573
ML925B22F-05 / ML920J22S-05 / ML925J22F-05 / ML920L22S-05 1587 1590 1593
ML925B22F-06 / ML920J22S-06 / ML925J22F-06 / ML920L22S-06
λp
CW
Po=5mW
Tc=25
ºC
1607 1610 1613
nm
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
OUTLINE DRAWINGS
(1)
φ3.75±0.1
φ5.6
+0
-0.03
1.27
±0.03
18
±1
3.97
±0.15
1.2
±0.1
4-φ0.45
±0.05
(2)
Ｘ
1±0.1
2-90°
Ｙ
φ2.0
±0.25
(P.C.D.)
φ4.3
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
Ｚ
Top View
(7.51)
ML925B11F
ML925B16F
ML925B22F
ML920J11S
ML920J16S
ML920J22S
Dimension : m
m
(1)
φ1.0Min.
φ2.0Min.
φ3.5 5±0. 1
φ5.6
+0
-0.03
1.27
±0.0 3
0.25
±0.03
18
±1
2.1
±0.1 5
1.2
±0.1
4-φ0.45
±0.05
(2)
Ｘ
1
±0.1
2-90°
Ｙ
φ2.0
±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(Glass)
ML925B11F,ML925B16F,ML925B22F
Case
(1)
(1)(1)
(1) (2)
(2)(2)
(2)
(3)
(3)(3)
(3)
(4)
(4)(4)
(4)
PD
LD
Pi n Connectio n
( Top view )
Case
(1)
(1)(1)
(1) (2)
(2)(2)
(2)
(3)
(3)(3)
(3)
(4)
(4)(4)
(4)
PD
LD
ML920J11S,ML920J16S,ML920J22S
ML925J11F
ML925J16F
ML925J22F
ML920L11S
ML920L16S
ML920L22S
Dimension : m
m
ML925J11F,ML925J16F,ML925J22F
Case
(1)
(1)(1)
(1) (2)
(2)(2)
(2)
(3)
(3)(3)
(3)
(4)
(4)(4)
(4)
PD
LD
Pi n Connection
( To p view )
Case
(1)
(1)(1)
(1) (2)
(2)(2)
(2)
(3)
(3)(3)
(3)
(4)
(4)(4)
(4)
PD
LD
ML920L11S,ML920L16S,ML920L22S
