NSVBC848BWT1G - ON SEMICONDUCTOR

April, 2015 − Rev. 12 1Publication Order Number:

BC846AWT1/D

BC846, BC847, BC848

General Purpose

Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

Features

•S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage BC846

BC847

BC848

VCEO 65

Collector-Base Voltage BC846

BC847

BC848

VCBO 80

Emitter-Base Voltage BC846

BC847

BC848

VEBO 6.0

6.0

5.0

Collector Current − Continuous IC100 mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°C PD200 mW

Thermal Resistance,

Junction−to−Ambient RqJA 620 °C/W

Junction and Storage Temperature TJ, Tstg −55 to

+150 °C

1. FR−5 = 1.0 x 0.75 x 0.062 in.

www.onsemi.com

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

XX = Specific Device Code

M = Month Code

G= Pb−Free Package

(Note: Microdot may be in either location)

XX MG

COLLECTOR

BASE

EMITTER

See detailed ordering, marking and shipping information in the

package dimensions section on page 12 of this data sheet.

ORDERING INFORMATION

BC846, BC847, BC848

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage BC846 Series

(IC = 10 mA) BC847 Series

BC848 Series

V(BR)CEO 65

−

Collector−Emitter Breakdown Voltage BC846 Series

(IC = 10 mA, VEB = 0) BC847 Series

BC848 Series

V(BR)CES 80

−

Collector−Base Breakdown Voltage BC846 Series

(IC = 10 mA) BC847 Series

BC848 Series

V(BR)CBO 80

−

Emitter−Base Breakdown Voltage BC846 Series

(IE = 1.0 mA) BC847 Series

BC848 Series

V(BR)EBO 6.0

6.0

5.0

−

Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO −

−−

−15

5.0 nA

ON CHARACTERISTICS

DC Current Gain BC846A, BC847A, BC848A

(IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B

BC847C, BC848C

(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A

BC846B, BC847B, BC848B

BC847C, BC848C

hFE −

−

110

200

420

150

270

180

290

520

−

220

450

800

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) −

−−

−0.25

0.6 V

Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) −

−0.7

0.9 −

−V

Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580

−660

−700

770 mV

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 − − MHz

Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF

Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB

BC846, BC847, BC848

www.onsemi.com

BC846A, BC847A, BC848A

Figure 1. DC Current Gain vs. Collector

Current Figure 2. DC Current Gain vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.10.010.001

100

200

300

0.10.010.0010.0001

0.02

0.18

Figure 3. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

hFE, DC CURRENT GAIN

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

VCE = 1 V

150°C

−55°C

25°C

IC/IB = 20 150°C

−55°C

25°C

0.4

0.9 IC/IB = 20

150°C

−55°C

25°C

0.4

0.7

1.1 VCE = 5 V

150°C

−55°C

25°C

0.04

0.06

0.08

0.10

0.12

0.14

0.16

Figure 5. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.10.010.001

100

200

300

hFE, DC CURRENT GAIN

VCE = 5 V

150°C

−55°C

25°C

BC846, BC847, BC848

www.onsemi.com

BC846A, BC847A, BC848A

Figure 6. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 7. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02 1.0 10

020

0.1

0.4

0.8

VCE, COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

0.2 1.0 10 100

-55°C to +125°CTA = 25°C

IC = 50 mA IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

Figure 8. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 9. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

0.4 0.6 1.0 10 20

1.0 2.0 6.0 40

100

200

300

400

7.0

5.0

3.0

2.0

0.7 1.0 10 202.0 50

307.05.03.00.5

VCE = 10 V

TA = 25°C

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

0.8 4.0 8.0

TA = 25°C

Cob

Cib

BC846, BC847, BC848

www.onsemi.com

BC846B

Figure 10. DC Current Gain vs. Collector

Current Figure 11. DC Current Gain vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.10.010.001

100

200

300

400

600

0.10.010.0010.0001

0.15

0.30

Figure 12. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 13. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

1.1

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

hFE, DC CURRENT GAIN

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

VCE = 1 V

150°C

−55°C

25°C

IC/IB = 20 150°C

−55°C

25°C

0.4

0.9

IC/IB = 20

150°C

−55°C

25°C

0.4

0.7

1.1 VCE = 5 V

150°C

−55°C

25°C

500

0.25

0.20

0.05

0.10

Figure 14. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.10.010.001

100

200

300

400

600

hFE, DC CURRENT GAIN

VCE = 5 V

150°C

−55°C

25°C

500

BC846, BC847, BC848

www.onsemi.com

BC846B

Figure 15. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 16. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

1.0

1.2

1.6

2.0

0.02 1.0 10

020

0.1

0.4

0.8

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

0.2 2.0 10 200

1.0

TA = 25°C

200 mA

50 mA

IC =

10 mA

0.05 0.2 0.5 2.0 5.0

100 mA

20 mA

1.4

1.8

2.2

2.6

3.0

0.5 5.0 20 50 100

-55°C to 125°C

qVB for VBE

Figure 17. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 18. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

0.1 0.2 1.0 50

2.0 2.0 10 100

100

200

500

6.0

4.0

1.0 10 50 100

5.0

VCE = 5 V

TA = 25°C

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT

0.5 5.0 20

TA = 25°C

Cob

Cib

BC846, BC847, BC848

www.onsemi.com

BC847B, BC848B

Figure 19. DC Current Gain vs. Collector

Current Figure 20. DC Current Gain vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.10.010.001

100

200

600

0.10.010.0010.0001

0.05

0.30

Figure 21. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 22. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.1

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

hFE, DC CURRENT GAIN

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

VCE = 1 V

150°C

−55°C

25°C

IC/IB = 20

150°C

−55°C

25°C

0.4

0.9

IC/IB = 20

150°C

−55°C

25°C

0.4

0.7

1.1 VCE = 5 V

150°C

−55°C

25°C

0.10

0.15

0.20

0.25

300

400

500

1.0

Figure 23. Base Emitter Voltage vs. Collector

Current

0.10.010.001

100

200

600

hFE, DC CURRENT GAIN

VCE = 5 V

150°C

−55°C

25°C

300

400

500

IC, COLLECTOR CURRENT (A)

BC846, BC847, BC848

www.onsemi.com

BC847B, BC848B

Figure 24. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 25. Base−Emitter Temperature

Coefficient

IC, COLLECTOR CURRENT (mA)

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02 1.0 10

020

0.1

0.4

0.8

VCE, COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

0.2 1.0 10 100

-55°C to +125°CTA = 25°C

IC = 50 mA IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

Figure 26. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 27. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

0.4 0.6 1.0 10 20

1.0 2.0 6.0 40

100

200

300

400

7.0

5.0

3.0

2.0

0.7 1.0 10 202.0 50

307.05.03.00.5

VCE = 10 V

TA = 25°C

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

0.8 4.0 8.0

TA = 25°C

Cob

Cib

BC846, BC847, BC848

www.onsemi.com

BC847C, BC848C

Figure 28. DC Current Gain vs. Collector

Current Figure 29. DC Current Gain vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.10.010.001

100

200

1000

0.10.010.0010.0001

0.05

0.30

Figure 30. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 31. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.1

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

hFE, DC CURRENT GAIN

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

VCE = 1 V

150°C

−55°C

25°C

IC/IB = 20

150°C

−55°C

25°C

0.4

0.9

IC/IB = 20

150°C

−55°C

25°C

0.4

0.7

1.1 VCE = 5 V

150°C

−55°C

25°C

0.10

0.15

0.20

0.25

300

400

500

1.0

600

700

800

900

Figure 32. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.10.010.001

100

200

1000

hFE, DC CURRENT GAIN

VCE = 5 V

150°C

−55°C

25°C

300

400

500

600

700

800

900

BC846, BC847, BC848

www.onsemi.com

BC847C, BC848C

Figure 33. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 34. Base−Emitter Temperature

Coefficient

IC, COLLECTOR CURRENT (mA)

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02 1.0 10

020

0.1

0.4

0.8

VCE, COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

0.2 1.0 10 100

-55°C to +125°CTA = 25°C

IC = 50 mA IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

Figure 35. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 36. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

0.4 0.6 1.0 10 20

1.0 2.0 6.0 40

100

200

300

400

7.0

5.0

3.0

2.0

0.7 1.0 10 202.0 50

307.05.03.00.5

VCE = 10 V

TA = 25°C

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

0.8 4.0 8.0

TA = 25°C

Cob

Cib

BC846, BC847, BC848

www.onsemi.com

1 mS

Thermal Limit

1 S

Figure 37. Safe Operating Area for

BC846A, BC846B Figure 38. Safe Operating Area for

BC847A, BC847B, BC847C

VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)

100101

0.001

0.01

0.1

1001010.1

0.001

0.01

0.1

Figure 39. Safe Operating Area for

BC848A, BC848B, BC848C

VCE, COLLECTOR EMITTER VOLTAGE (V)

1001010.1

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

100 mS 10 mS 1 mS

Thermal Limit

1 S

100 mS 10 mS

1 mS

Thermal Limit

1 S

100 mS 10 mS

BC846, BC847, BC848

www.onsemi.com

DEVICE ORDERING AND SPECIFIC MARKING INFORMATION

Device Specific Marking Code Package Shipping†

BC846BWT1G 1B

SC−70 (SOT−323)

(Pb−Free)

3,000 / Tape & Reel

SBC846BWT1G*

BC847AWT1G 1E 3,000 / Tape & Reel

SBC847AWT1G*

BC847BWT1G 1F 3,000 / Tape & Reel

SBC847BWT1G*

BC847CWT1G 1G 3,000 / Tape & Reel

SBC847CWT1G*

BC847CWT3G 1G 10,000 / Tape & Reel

SBC847CWT3G*

BC848BWT1G 1K 3,000 / Tape & Reel

NSVBC848BWT1G*

BC848CWT1G 1L

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-

cifications Brochure, BRD8011/D.

*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified

and PPAP Capable.

SC−70 (SOT−323)

CASE 419−04

ISSUE N

DATE 11 NOV 2008

SCALE 4:1

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

STYLE 2:

PIN 1. ANODE

2. N.C.

3. CATHODE

STYLE 1:

CANCELLED

STYLE 5:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 6:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

STYLE 7:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

AA2

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

STYLE 8:

PIN 1. GATE

2. SOURCE

3. DRAIN

STYLE 9:

PIN 1. ANODE

2. CATHODE

3. CATHODE-ANODE

STYLE 10:

PIN 1. CATHODE

2. ANODE

3. ANODE-CATHODE

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

XX MG

XX = Specific Device Code

M = Date Code

G= Pb−Free Package

GENERIC

MARKING DIAGRAM

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.70 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.38

0.028 REF

0.026 BSC

0.015

0.20 0.56 0.008 0.022

STYLE 11:

PIN 1. CATHODE

2. CATHODE

3. CATHODE

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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SC−70 (SOT−323)

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