ZXMN10A11G Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET BVDSS Features and Benefits ID RDS(on) TA = +25C 350m @ VGS = 10V 2.4A 450m @ VGS = 6.0V 2.1A 100V Fast Switching Speed Low Gate Drive Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control DC-DC Converters Power Management Functions Uninterrupted Power Supply Case: SOT223 Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) SOT223 D G S Equivalent Circuit Pin Out - Top View Top View Ordering Information (Note 4) Product ZXMN10A11GTA Notes: Marking See Below Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT223 ZXMN 10A11 ZXMN10A11G Document Number DS32056 Rev. 8 - 2 YWW ADVANCE INFORMATION Product Summary ZXMN10A11 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 8 www.diodes.com March 2015 (c) Diodes Incorporated ZXMN10A11G Maximum Ratings (@TA = +25C unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V Pulsed Drain Current VGS= 10V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (Note 6) TA = +70C (Note 6) (Note 5) (Note 7) (Note 6) (Note 7) ID IDM IS ISM Value 100 20 2.4 1.9 1.7 7.9 4.6 7.9 Unit V V Value 2.0 16 3.9 31 62.5 32.0 9.8 -55 to 150 Unit A A A A Thermal Characteristics (@TA = +25C unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: Symbol (Note 5) PD (Note 6) (Note 5) (Note 6) (Note 8) RJA RJL TJ, TSTG W mW/C C/W C/W C 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t 10 seconds. 7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMN10A11G Document Number DS32056 Rev. 8 - 2 2 of 8 www.diodes.com March 2015 (c) Diodes Incorporated ZXMN10A11G Max Power Dissipation (W) ID Drain Current (A) 10 RDS(on) Limited 1 DC 100m 1s 100ms 10ms 10m 1ms Single Pulse T amb=25C 1 100s 10 100 2.0 1.6 1.2 0.8 0.4 0.0 VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 Temperature (C) Derating Curve Safe Operating Area 70 Maximum Power (W) Thermal Resistance (C/W) ADVANCE INFORMATION Thermal Characteristics T amb=25C 60 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 0 100 D=0.1 1m 10m 100m 1 10 100 1k 100 10 1 100 Pulse Width (s) Document Number DS32056 Rev. 8 - 2 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ZXMN10A11G Single Pulse T amb=25C Pulse Power Dissipation 3 of 8 www.diodes.com March 2015 (c) Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G Electrical Characteristics (@TA = +25C unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 100 V ID = 250A, VGS = 0V Zero Gate Voltage Drain Current IDSS 1 A VDS = 100V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V VGS(th) 2.0 4.0 V ID = 250A, VDS = VGS ON CHARACTERISTICS Gate Threshold Voltage VGS = 10V, ID = 2.6A RDS (ON) Forward Transconductance (Notes 9 & 10) gfs 4 S VDS = 15V, ID = 2.6A Diode Forward Voltage (Note 9) VSD 0.85 0.95 V IS = 1.85A, VGS = 0V Reverse Recovery Time (Note 10) trr 26 ns Reverse Recovery Charge (Note 10) Qrr 30 nC Input Capacitance Ciss 274 pF Output Capacitance Coss 21 pF Reverse Transfer Capacitance Crss 11 pF Total Gate Charge (Note 11) Qg 3.5 nC Total Gate Charge (Note 11) Qg 5.4 nC Gate-Source Charge (Note 11) Qgs 1.4 nC Gate-Drain Charge (Note 11) Qgd 1.5 nC Turn-On Delay Time (Note 11) tD(on) 2.7 ns Turn-On Rise Time (Note 11) tr 1.7 ns Turn-Off Delay Time (Note 11) tD(off) 7.4 ns tf 3.5 ns Static Drain-Source On-Resistance (Note 9) 0.35 0.45 VGS = 6V, ID = 1.3A IF = 1.0A, di/dt = 100A/s DYNAMIC CHARACTERISTICS (Note 6) Turn-Off Fall Time (Note 11) Notes: VDS = 50V, VGS = 0V f = 1MHz VGS = 6.0V VGS = 10V VDS = 50V ID = 2.5A VDD = 50V, VGS = 10V ID = 1A, RG 6.0 9. Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. ZXMN10A11G Document Number DS32056 Rev. 8 - 2 4 of 8 www.diodes.com March 2015 (c) Diodes Incorporated ZXMN10A11G 10 10 10V 4.5V 1 4V VGS 0.1 3.5V 0.1 1 1 1 10 3.5V 0.1 3V VGS 2.5V 0.1 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150C VDS = 10V 3 4 5 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 VGS Gate-Source Voltage (V) VGS = 10V ID = 2.6A RDS(on) VGS(th) VGS = VDS ID = 250uA 0 50 100 150 Tj Junction Temperature (C) Typical Transfer Characteristics Normalised Curves v Temperature 3.5V 4V VGS 4.5V 10 5V 1 10V T = 25C 0.1 1 ID Drain Current (A) On-Resistance v Drain Current ZXMN10A11G Document Number DS32056 Rev. 8 - 2 10 ISD Reverse Drain Current (A) 10 100 0.1 0.01 4V VDS Drain-Source Voltage (V) T = 25C 0.1 5V 4.5V 0.01 Normalised RDS(on) and VGS(th) ID Drain Current (A) 0.01 10V T = 150C 5V ID Drain Current (A) ID Drain Current (A) T = 25C RDS(on) Drain-Source On-Resistance ADVANCE INFORMATION Typical Characteristics T = 150C 1 T = 25C 0.1 0.01 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com March 2015 (c) Diodes Incorporated ZXMN10A11G ADVANCE INFORMATION Typical Characteristics (cont.) Test Circuits ZXMN10A11G Document Number DS32056 Rev. 8 - 2 6 of 8 www.diodes.com March 2015 (c) Diodes Incorporated Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0 -1 0 e A A1 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm 7 7 ADVANCE INFORMATION ZXMN10A11G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X ZXMN10A11G Document Number DS32056 Rev. 8 - 2 C 7 of 8 www.diodes.com March 2015 (c) Diodes Incorporated ZXMN10A11G ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2015, Diodes Incorporated www.diodes.com ZXMN10A11G Document Number DS32056 Rev. 8 - 2 8 of 8 www.diodes.com March 2015 (c) Diodes Incorporated