TEMIC Semiconductors PAD/JPAD/SSTPAD Series Low-Leakage Pico-Amp Diodes PAD1 JPADS5 SSTPADS5 PADS5 JPAD50 SSTPAD100 PAD50 Product Summary Part Number Ip Max (pA) PADI ~1 PADS/JPADS/SSTPADS ~5 PADSO/IPADSO 50 SSTPAD100 -100 Features Benefits Applications @ Ultralow Leakage: PADI <I pA @ Two-Leaded Package @ Negligible Circuit Leakage Contribution @ Ultralow Capacitance: PADI <0.8 pF Circuit Transparent Except to Shunt High-Frequency Spikes Op Amp Input Protection @ Multiplexer Overvoltage Protection @ Simplicity of Operation Description The PADAPAD/SSTPAD series of extremely low-leakage diodes provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. They feature leakage currents ranging from -] pA (PAD) to -100 pA (SSTPAD 100) to support a wide range of applications. These devices are well suited for use in applications such as input protection for operational amplifiers. TO-206AF (TO-72) Modified TO-206AA (TO-18) Modified c Case Cc eH By A A A and Case Top View Top View PADI PADSO PADS The hermetically sealed TO-206AF (TO-72) package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both J and SST series are available in tape-and-reel for automated assembly. (See Packaging Information.) TO-226AA (TO-92) Modified TO-236 (SOT-23) Sys Top View Top View SSTPADS (05)* SSTPAD100 (O01) JPADS JPADSO *Marking Code for TO-236 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70339. Siliconix -52424Rev. G, 14-Apr-97 5-1 Low-Leakage Diodes BPAD/JPAD/SSTPAD Series TEMIC Absolute Maximum Ratings? Forward Current: (PAD 2.00.0. . eeeee 50 mA Lead Temperature ('/1 from case for {0 sec.)............. 300C (JPAD/SSTPAD ) ............- 10 mA Total Device Dissipation: (PAD) 0.2.00. 00... eee. 300 mW Notes: UPAD/SSTPAD)? ..... .... 350 mW a Ta = 25C unless otherwise noted. : 5 5 b. Derate 2 mW/C above 25C. Operation Junction Temp: (PAD)................ -55 to 175C 5 , 2.8 mW/C a C, (UPADISSTPAD Jf... .. -5510 150C Dente 2.8 MWC above 25C Specifications Limits Parameter Symbol Test Conditions Min | Typ? | Max | Unit Static PADI 9.3 -1 PADS/JPADS/SSTPADS -l -5 Reverse Current Ip VR=-20V pA PADSO/JPADSO 5 30 SSTPADIO0O -10 ~100 PADI/PADS 45 ~60 Reverse Breakdown Voltage BVep Ip=-l uA SSTPADS/100 -30 55 Vv All Others ~35 ~35 Forward Voltage Drop Ve Ip= tl mA 0.8 1.5 Dynamic PADI/PADS 0.5 0.8 Reverse Capacitance Cr Vp =-SV. f= 1 MHz pF All Others LS 2 Notes: a. Ta = 25C unless otherwise noted. NT/NPA b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. . ge Typical Characteristics 1000 Reverse Current vs. Reverse Voltage 100 Reverse Current vs. Temperature R=-20V @ 125 -100 -10 < < & 10 Sy me ~ - 0.1 ~0.4 0.01 a ~6 -12 ~18 24 ~30 ~5 -35 -15 5 25 45 68 85 105 125 Vp (V) Ta ~ Temperature (C) 5-2 Siliconix S-52424Rev. G, 14-Apr-97