Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Feb.1999
FS70KMJ-06 OUTLINE DRAWING Dimensions in mm
TO-220FN
MITSUBISHI Nch POWER MOSFET
FS70KMJ-06
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
123
q GATE
w DRAIN
e SOURCE
E
w
q
e
V
V
A
A
A
A
A
W
°C
°C
V
g
60
±20
70
280
70
70
280
35
–55 ~ +150
–55 ~ +150
2000
2.0
VGS = 0V
VDS = 0V
L = 100µH
AC for 1minute, Terminal to case
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
¡4V DRIVE
¡VDSS ................................................................................. 60V
¡rDS (ON) (MAX) ................................................................7mΩ
¡ID ........................................................................................ 70A
¡Integrated Fast Recovery Diode (TYP.) ............ 90ns
¡Viso ............................................................................... 2000V
Feb.1999
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
MITSUBISHI Nch POWER MOSFET
FS70KMJ-06
HIGH-SPEED SWITCHING USE
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
60
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
5.4
6.5
0.19
65
8200
1600
860
54
150
800
380
1.0
—
90
—
±0.1
0.1
2.0
7.0
8.4
0.25
—
—
—
—
—
—
—
—
1.5
3.57
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 35A, VGS = 10V
ID = 35A, VGS = 4V
ID = 35A, VGS = 10V
ID = 35A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 35A, VGS = 10V, RGEN = RGS = 50Ω
IS = 35A, VGS = 0V
Channel to case
IS = 70A, dis/dt = –100A/µs
PERFORMANCE CURVES
0
10
20
30
40
50
0 20050 100 150
6V
0
20
40
60
80
100
0 0.4 0.8 1.2 1.6 2.0
V
GS
= 10V
T
C
= 25°C
Pulse Test
4V
5V
3V
P
D
= 35W
100
3
5
7
101
2
3
5
7
102
2
3
2
3
5
7
100210
1
357357 2 10
2
357 23
T
C
= 25°C
Single Pulse
tw = 10ms
100ms
1ms
10ms
DC
100ms
5V
0
10
20
30
40
50
0 0.2 0.4 0.6 0.8 1.0
V
GS
= 10V
T
C
= 25°C
Pulse Test
4V
2.5V
3.5V P
D
= 35W
3V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS70KMJ-06
HIGH-SPEED SWITCHING USE
0
20
40
60
80
100
0246810
TC = 25°C
VDS = 10V
Pulse Test
10
0
10
1
23 57 10
2
23 57
10
0
10
1
2
3
5
7
10
2
2
3
5
7
TC = 25°C75°C
125°C
VDS = 10V
Pulse Test
0
0.2
0.4
0.6
0.8
1.0
0246810
ID = 100A
TC = 25°C
Pulse Test
70A
30A
10
3
3
5
7
10
4
2
3
5
7
10
5
2
3
2
5
7
10
0
210
1
357357 2 10
2
357 23
2
Ciss
Crss
Coss
Tch = 25°C
f = 1MHZ
VGS = 0V
10
0
10
1
23 57 10
2
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
td(off)
tr
Tch = 25°C
VDD = 30V
VGS = 10V
RGEN = RGS = 50Ω
tf
td(on)
0
2.0
4.0
6.0
8.0
10.0
10
0
357 2 10
1
357 2 10
2
357 23
VGS = 4V
TC = 25°C
Pulse Test
10V
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS70KMJ-06
HIGH-SPEED SWITCHING USE
0
20
40
60
80
100
0 0.4 0.8 1.2 1.6 2.0
T
C
= 125°C
75°C
25°C
V
GS
= 0V
Pulse Test
0
2
4
6
8
10
0 40 80 120 160 200
V
DS
= 10V
20V
40V
T
ch
= 25°C
I
D
= 70A
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
0
0.8
1.6
2.4
3.2
4.0
–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
