2N7002KT1H - ON Semiconductor L.L.C.

February, 2012 − Rev. 9

1Publication Order Number:

2N7002K/D

2N7002K

Small Signal MOSFET

60 V, 380 mA, Single, N−Channel, SOT−23

Features

•ESD Protected

•Low RDS(on)

•Surface Mount Package

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

•Low Side Load Switch

•Level Shift Circuits

•DC−DC Converter

•Portable Applications i.e. DSC, PDA, Cell Phone, etc.

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Rating Symbol Value Unit

Drain−to−Source Voltage VDSS 60 V

Gate−to−Source Voltage VGS ±20 V

Drain Current (Note 1)

Steady State 1 sq in Pad TA = 25°C

TA = 85°C

ID380

270

Drain Current (Note 2)

Steady State Minimum Pad TA = 25°C

TA = 85°C

ID320

230

Power Dissipation

Steady State 1 sq in Pad

Steady State Minimum Pad

PD420

300

Pulsed Drain Current (tp = 10 ms) IDM 1.5 A

Operating Junction and Storage

Temperature Range

TJ, TSTG −55 to

+150

°C

Source Current (Body Diode) IS300 mA

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL260 °C

Gate−Source ESD Rating

(HBM, Method 3015)

ESD 2000 V

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Junction−to−Ambient − Steady State (Note 1) RqJA 300 °C/W

Junction−to−Ambient − t ≤ 5 s (Note 1) 92

Junction−to−Ambient − Steady State (Note 2) 417

Junction−to−Ambient − t ≤ 5 s (Note 2) 154

1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.

2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

Device Package Shipping†

ORDERING INFORMATION

2N7002KT1G 3000/Tape & Reel

SIMPLIFIED SCHEMATIC

SOT−23

CASE 318

STYLE 21

704 MG

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

Gate

Source

http://onsemi.com

SOT−23

(Pb−Free)

60 V 1.6 W @ 10 V

RDS(on) MAX

380 mA

ID MAXV(BR)DSS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

2.5 W @ 4.5 V

Gate

Source

Drain

(Top View)

704 = Specific Device Code*

M = Date Code*

G= Pb−Free Package

2N7002KT1H 3000/Tape & ReelSOT−23

(Pb−Free)

*Specific Device Code, Date Code or overbar

orientation and/or location may vary depend-

ing upon manufacturing location. This is a

representation only and actual devices may

not match this drawing exactly.

(Note: Microdot may be in either location)

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ71 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = 60 V

TJ = 25°C 1 mA

TJ = 125°C 500

VGS = 0 V,

VDS = 50 V

TJ = 25°C 100 nA

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±10 mA

VDS = 0 V, VGS = ±10 V 450 nA

VDS = 0 V, VGS = ±5.0 V 150 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.0 2.3 V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ4.0 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.19 1.6 W

VGS = 4.5 V, ID = 200 mA 1.33 2.5

Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS

CHARGES AND CAPACITANCES

Input Capacitance CISS

VGS = 0 V, f = 1 MHz,

VDS = 20 V

24.5 pF

Output Capacitance COSS 4.2

Reverse Transfer Capacitance CRSS 2.2

Total Gate Charge QG(TOT)

VGS = 4.5 V, VDS = 10 V;

ID = 200 mA

0.7 nC

Threshold Gate Charge QG(TH) 0.1

Gate−to−Source Charge QGS 0.3

Gate−to−Drain Charge QGD 0.1

SWITCHING CHARACTERISTICS, VGS = V (Note 4)

Turn−On Delay Time td(ON)

VGS = 10 V, VDD = 25 V,

ID = 500 mA, RG = 25 W

12.2 ns

Rise Time tr9.0

Turn−Off Delay Time td(OFF) 55.8

Fall Time tf29

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

IS = 200 mA

TJ = 25°C 0.8 1.2 V

TJ = 85°C 0.7

3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

4. Switching characteristics are independent of operating junction temperatures

2N7002K

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TYPICAL CHARACTERISTICS

5.0 V

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

6420

0.4

0.8

1.2

1.6

6420

0.4

0.8

1.2

Figure 3. On−Resistance vs. Drain Current and

Temperature

Figure 4. On−Resistance vs. Drain Current and

Temperature

ID, DRAIN CURRENT (A)

1.21.00.80.60.40.20

0.4

0.8

1.2

1.6

2.0

3.2

Figure 5. On−Resistance vs. Gate−to−Source

Voltage

Figure 6. On−Resistance Variation with

Temperature

VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)

108642

0.4

0.8

1.6

2.4

1251007550250−25−50

0.6

1.0

1.4

1.8

2.2

ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

VGS = 10 V

7.0 V

8.0 V

9.0 V 4.5 V

4.0 V

6.0 V

3.5 V

3.0 V

2.5 V

TJ = −55°C

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 125°C

TJ = 25°C

TJ = 85°C

VGS = 4.5 V

ID, DRAIN CURRENT (A)

1.21.00.80.60.40.20

0.8

1.6

2.4

3.2

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

TJ = −55°C

TJ = 125°C

TJ = 25°C

TJ = 85°C

VGS = 10 V

ID = 500 mA

ID = 200 mA

150

ID = 0.2 A

VGS = 4.5 V

VGS = 10 V

1.2

2.0

2.4

2.8

0.4

1.2

2.0

2.8

2N7002K

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Qg, TOTAL GATE CHARGE (nC)

0.80.60.40.20

Figure 9. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

1.21.00.80.60.4

0.01

VGS, GATE−TO−SOURCE VOLTAGE (V)

IS, SOURCE CURRENT (A)

TJ = 25°C

ID = 0.2 A

201612840

C, CAPACITANCE (pF)

Ciss

Coss

Crss

TJ = 25°C

VGS = 0 V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°CTJ = 85°C

VGS = 0 V

0.1

Figure 10. Threshold Voltage with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

1251007550250−25−50

0.5

0.7

0.9

1.1

1.3

VGS(TH), THRESHOLD VOLTAGE (V)

150

ID = 250 mA

0.6

0.8

1.0

1.2

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TYPICAL CHARACTERISTICS

0.1

100

0.000001 0.00001 0.0001 0.001 0.01 0.1 1000

Figure 11. Thermal Response − 1 sq in pad

t, PULSE TIME (s)

RqJC(t) (°C/W) EFFECTIVE TRANSIENT

THERMAL RESISTANCE

0.02

0.2

0.01

0.05

Duty Cycle = 0.5

SINGLE PULSE

0.1

1 10 100

1000

0.1

100

0.000001 0.00001 0.0001 0.001 0.01 0.1 1000

Figure 12. Thermal Response − minimum pad

t, PULSE TIME (s)

RqJC(t) (°C/W) EFFECTIVE TRANSIENT

THERMAL RESISTANCE

0.02

0.2

0.01

0.05

Duty Cycle = 0.5

SINGLE PULSE

0.1

1 10 100

1000

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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2N7002K/D

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