DSEP29-12A HiPerFRED VRRM = 1200 V I FAV = 30 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP29-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160921b DSEP29-12A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C 1200 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1200 V V VR = 1200 V TVJ = 25C 250 A VR = 1200 V TVJ = 150C 1 mA IF = 30 A TVJ = 25C 2.75 V IF = 60 A 3.30 V IF = 30 A 1.81 V IF = 60 A TVJ = 150 C TC = 120 C rectangular 2.34 V T VJ = 175 C 30 A TVJ = 175 C 1.12 V 16.6 m d = 0.5 for power loss calculation only 0.9 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C VR = 600 V f = 1 MHz TVJ = 25C 12 pF TVJ = 25 C 8.5 A TVJ = 100 C 13 A TVJ = 25 C 60 ns TVJ = 100 C 170 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.50 TC = 25C IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 30 A; VR = 600 V -di F /dt = 200 A/s 165 200 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20160921b DSEP29-12A Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 C -55 150 C 150 C 2 Weight MD mounting torque FC mounting force with clip g 0.4 0.6 Nm 20 60 N Product Marking Part Number XXXXXX Logo Assembly Line Lot # Zyyww abcdef Date Code Ordering Standard Ordering Number DSEP29-12A Similar Part DSEP29-12B DSEP30-12A DSEP30-12AR DSEP30-12B Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP29-12A Package TO-220AC (2) TO-247AD (2) ISOPLUS247 (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 477125 Voltage class 1200 1200 1200 1200 T VJ = 175 C Fast Diode V 0 max threshold voltage 1.12 V R0 max slope resistance * 13.3 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20160921b DSEP29-12A Outlines TO-220 A = supplier option H1 OP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 OP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20160921b DSEP29-12A Fast Diode 70 5 60 TVJ = 100C VR = 600 V 60 TVJ = 150C 50 50 4 IF = 60 A 100C 25C IF = 60 A 30 A 15 A Qr 3 IF 40 30 A 15 A 40 IRM 30 [A] 30 [A] [C] 2 20 20 1 10 10 0 0 1 2 3 0 100 4 TVJ = 100C VR = 600 V 0 1000 0 200 -diF /dt [A/s] VF [V] Fig. 1 Forward current IF versus VF 220 TVJ = 100C 100 IF = 60 A 1.0 IF = 30 A 1.5 80 0.8 60 0.6 40 0.4 VFR 30 A 15 A Kf 1.0 1000 1.2 VR = 600 V 180 800 120 TVJ = 100C 200 trr 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 400 -diF /dt [A/s] tfr [s] [V] [ns] 160 IRM 0.5 140 QR 20 0.2 trr VFR 0.0 120 0 40 80 120 TVJ [C] 160 0 0 Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 200 400 600 800 -diF /dt [A/s] 1000 0 200 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 1 0.1 Constants for ZthJC calculation: ZthJC [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 i Rthi (K/W) ti (s) 1 0.030 0.001 2 0.080 0.030 3 0.300 0.006 4 0.490 0.060 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160921b