MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
2
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Rev.2.1,2014-06-27Final Data Sheet
(enlarged source interconnection)
TSDSON-8FL
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
1Description
Features
•Optimizedforsynchronousrectification
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel,logiclevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilitywithenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 40 V
RDS(on),max 2.5 mΩ
ID40 A
QOSS 33 nC
QG(0V..10V) 37 nC
Type/OrderingCode Package Marking RelatedLinks
BSZ025N04LS PG-TSDSON-8 FL 025N04L -
1) J-STD20 and JESD22
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Rev.2.1,2014-06-27Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Rev.2.1,2014-06-27Final Data Sheet
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID
-
-
-
-
-
-
-
-
-
-
40
40
40
40
22
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=60K/W1)
Pulsed drain current2) ID,pulse - - 160 A TC=25°C
Avalanche current, single pulse3) IAS - - 20 A TC=25°C
Avalanche energy, single pulse EAS - - 130 mJ ID=20A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot -
-
-
-
69
2.1 WTC=25°C
TA=25°C,RthJA=60K/W1)
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;
DIN IEC 68-1: 55/150/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - 1.1 1.8 K/W -
Device on PCB,
6 cm2 cooling area1) RthJA - - 60 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Rev.2.1,2014-06-27Final Data Sheet
4Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA
Zero gate voltage drain current IDSS -
-
0.1
10
1
100 µA VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
2.4
2.0
3.2
2.5 mΩVGS=4.5V,ID=20A
VGS=10V,ID=20A
Gate resistance1) RG- 1.1 2.2 Ω-
Transconductance gfs 55 110 - S |VDS|>2|ID|RDS(on)max,ID=20A
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance1) Ciss - 2630 3680 pF VGS=0V,VDS=20V,f=1MHz
Output capacitance1) Coss - 750 1050 pF VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance1) Crss - 60 120 pF VGS=0V,VDS=20V,f=1MHz
Turn-on delay time td(on) - 6 - ns VDD=20V,VGS=10V,ID=20A,
RG,ext,ext=1.6Ω
Rise time tr- 7 - ns VDD=20V,VGS=10V,ID=20A,
RG,ext,ext=1.6Ω
Turn-off delay time td(off) - 27 - ns VDD=20V,VGS=10V,ID=20A,
RG,ext,ext=1.6Ω
Fall time tf- 5 - ns VDD=20V,VGS=10V,ID=20A,
RG,ext,ext=1.6Ω
1) Defined by design. Not subject to production test
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Rev.2.1,2014-06-27Final Data Sheet
Table6Gatechargecharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 6.3 - nC VDD=20V,ID=20A,VGS=0to10V
Gate charge at threshold Qg(th) - 4.2 - nC VDD=20V,ID=20A,VGS=0to10V
Gate to drain charge2) Qgd - 6.0 8.4 nC VDD=20V,ID=20A,VGS=0to10V
Switching charge Qsw - 8.1 - nC VDD=20V,ID=20A,VGS=0to10V
Gate charge total2) Qg- 37 52 nC VDD=20V,ID=20A,VGS=0to10V
Gate plateau voltage Vplateau - 2.4 - V VDD=20V,ID=20A,VGS=0to10V
Gate charge total2) Qg- 19 27 nC VDD=20V,ID=20A,VGS=0to4.5V
Gate charge total, sync. FET Qg(sync) - 32 - nC VDS=0.1V,VGS=0to10V
Output charge2) Qoss - 33 46 nC VDD=20V,VGS=0V
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - 40 A TC=25°C
Diode pulse current IS,pulse - - 160 A TC=25°C
Diode forward voltage VSD - 0.8 1 V VGS=0V,IF=20A,Tj=25°C
Reverse recovery time2) trr - 24 48 ns VR=20V,IF=20A,diF/dt=400A/µs
Reverse recovery charge2) Qrr - 20 - nC VR=20V,IF=20A,diF/dt=400A/µs
1) See ″Gate charge waveforms″ for parameter definition
2) Defined by design. Not subject to production test
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Rev.2.1,2014-06-27Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 40 80 120 160
0
10
20
30
40
50
60
70
80
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 40 80 120 160
0
10
20
30
40
50
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Rev.2.1,2014-06-27Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0.0 0.2 0.4 0.6 0.8 1.0
0
20
40
60
80
100
120
140
160
3.5 V
4 V
4.5 V
5 V
10 V 3.2 V
3 V
2.8 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 40 80 120 160
0
1
2
3
4
5
2.8 V
3 V
3.2 V
3.5 V
4 V 4.5 V
5 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
01234
0
40
80
120
160
150 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 10 20 30 40
0
40
80
120
160
gfs=f(ID);Tj=25°C
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Rev.2.1,2014-06-27Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140 180
0
1
2
3
4
5
max
typ
RDS(on)=f(Tj);ID=20A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 10 20 30 40
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5
100
101
102
103
25 °C
150 °C
25 °C max
150 °C max
IF=f(VSD);parameter:Tj
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Rev.2.1,2014-06-27Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
100101102103
100
101
102
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 10 20 30 40
0
2
4
6
8
10
12
8 V 32 V
20 V
VGS=f(Qgate);ID=20Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140
30
32
34
36
38
40
42
44
46
VBR(DSS)=f(Tj);ID=1mA
Gate charge waveforms
11
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Rev.2.1,2014-06-27Final Data Sheet
6PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
12
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Rev.2.1,2014-06-27Final Data Sheet
RevisionHistory
BSZ025N04LS
Revision:2014-06-27,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2014-06-27 Rev. 2.1
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