2SK2595
Silicon N-Channel MOS FET
UHF Power Amplifier
ADE-208-1366 (Z)
1st. Edition
Mar. 2001
Features
• High power output, High gain, High efficiency
PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz)
• Compact package capable of surface mounting
Outline
1
23
RP8P
1. Gate
2. Source
3. Drain
D
G
S
This Device is sensitive to Elector Static Discharge.
An Adequate handling procedure is requested.
2SK2595
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 17 V
Gate to source voltage VGSS ±10 V
Drain current ID1.1 A
Drain peak current ID(pulse)*15A
Channel dissipation Pch*220 W
Channel temperature Tch 150 °C
Storage temperature Tstg –45 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min. Typ Max. Unit Test Conditions
Zero gate voltage drain
current IDSS ——10µAV
DS = 12 V, VGS = 0
Gate to source leak current IGSS ——±5.0 µAV
GS = ±10V, VDS = 0
Gate to source cutoff voltage VGS(off) 0.6 — 1.3 V ID = 6mA, VDS = 12V
Input capacitance Ciss — 68 — pF VGS = 5V, VDS = 0
f = 1MHz
Output capacitance Coss — 27 — pF VDS = 12V, VGS = 0
f = 1MHz
Output Power Pout 37.3 38.45 — dBm VDS = 12V,
f = 836.5MHz
Pin = 29.5dBm
Drain Rational ηD5060—%V
DS = 12V
Pout = 37.3dBm
f = 836.5MHz
Pin = 29.5dBm
2SK2595
3
Main Characteristics
32
24
16
8
050 100 150 200
10
8
6
4
2
0246810
4 V
3 V
V = 2 V
GS
5 V
6 V
10 V
8 V
5
4
3
2
1
012345
Tc = –25°C
25°C
75°C
0.1
10
2
5
1
0.2
0.5
0.1
Tc = –25°C25°C
75°C
0.2 0.5 12 510
Channel Power Dissipation Pch (W)
Case Temperature Tc (°C)
Maximum Channel Power
Dissipation Curve
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Pulse Test
V = 12 V
Pulse Test
DS
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance
vs. Drain Current
V = 12 V
Pulse Test
DS
2SK2595
4
0.1
10
2
1
5
0.2
0.5
0.1
0.02
0.05
0.01
0.1 0.2 0.5 12 510
Tc = –25°C
25°C75°C
1.2
1.0
0.8
0.6
0.4
0.2
–25
00 25 50 75 100 125
1 mA
10 mA
I = 0.1 mA
D
V = 12 V
DS
70
–10 –6 –2 2 6 10
50
60
V = 0
f = 1 MHz
DS
100
20
10
50
0.1 0.2 0.5 1 2 5 10 20 50
V = 0
f = 1 MHz
GS
Drain to Source Saturation Voltage
vs. Drain Current
Drain Current I (A)
DAmbient Temperature Ta (°C)
Gate to Source Cutoff Voltage
Gate to Source Cutoff Voltage vs.
Ambient Temperature
GS(off)
GS
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage V (V)
Input Capacitance Ciss (pF)
DS
Drain to Source V (V)
Output Capacitance Coss (pF)
Drain to Source Saturation Voltage
DS(sat)
V (V)
V = 10 V
Pulse Test
DS
V (V)
Output Capacitance vs.
Drain to Source Voltage
2SK2595
5
10
2
1
5
0.1 0.2 0.5 1 2 5 10 20 50
V = 0
f = 1 MHz
GS 10
8
6
4
2
0
100
80
60
40
20
0
10.80.60.40.2
V = 28 V
I = 500 mA
f = 836.5MHz
DS
DO
Po
ηD
Output Power, Drain Rational
vs. Input Power
Output Power Po (W)
Input power Pin (W)
Drain Rational (%)
ηD
Reverse Transfer Capacitance vs.
Gate to Source Votage
Gate to Source Voltege VGS (V)
Reverse Transfer Capacitance Crss (pF)
2SK2595
6
Package Dimensions
5.2 ± 0.15
0.5+0.1
–0.05
3.4 ± 0.15
2.54 ± 0.2
0.16+0.1
–0.06
0.6
0.2
1.0
2.0 Max
4.5 Max
1.325 ± 0.15
1.1
5.6 +0.7
–0.5
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
RP8P
—
—
0.08 g
As of January, 2001
Unit: mm
2SK2595
7
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
URL NorthAmerica : http://semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia : http://sicapac.hitachi-asia.com
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
Colophon 2.0
