600V 16A APT6040BVFR 0.40 APT6040SVFR APT6040BVFRG*APT6040SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V(R) FREDFET BVFR D3PAK Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. TO-247 SVFR * Faster Switching * Avalanche Energy Rated * Lower Leakage * FAST RECOVERY BODY DIODE D G * TO-247 or Surface Mount D3PAK Package S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT6040B_SVFR(G) UNIT 600 Volts Drain-Source Voltage 16 Continuous Drain Current @ TC = 25C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 250 Watts Linear Derating Factor 2.0 W/C PD TJ,TSTG 1 64 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 16 1 Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 30 4 mJ 960 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 8A) TYP MAX UNIT Volts 0.400 Ohms Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A 3-2006 Characteristic / Test Conditions 050-7270 Rev B Symbol APT6040B_SVFR(G) DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX 2600 3120 Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V 305 425 Reverse Transfer Capacitance f = 1 MHz 125 180 Crss Qg 3 Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time VGS = 10V 115 170 VDD = 300V 15 25 ID = 16A @ 25C 52 75 VGS = 15V 10 20 VDD = 300V 9 18 ID = 16A @ 25C 38 50 RG = 1.6 6 12 TYP MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol IS ISM MIN 16 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) 64 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -16A) 1.3 Volts dv/ Peak Diode Recovery 15 V/ns dt dv/ dt 5 t rr Reverse Recovery Time (IS = -16A, di/dt = 100A/s) Tj = 25C 250 Tj = 125C 500 Q rr Reverse Recovery Charge (IS = -16A, di/dt = 100A/s) Tj = 25C 1.9 Tj = 125C 6 IRRM Peak Recovery Current (IS = -16A, di/dt = 100A/s) Tj = 25C 15 Tj = 125C 26 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.50 RJC Junction to Case RJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 40 0.5 0.2 0.1 0.05 0.01 0.005 0.02 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7270 Rev B 3-2006 D=0.5 0.05 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 C/W 4 Starting Tj = +25C, L = 7.50mH, RG = 25, Peak IL = 16A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID16A di/dt 700A/s VR 600V TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves 24 5.5V 18 12 5V 6 4.5V 4V 0 VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 18 12 TJ = +125C 6 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 12 8 4 5.5V 18 12 5V 6 4.5V 4V 1.5 NORMALIZED TO V = 10V @ 8A GS 1.4 1.3 1.2 VGS=10V 1.1 VGS=20V 1.0 0.9 0 6 12 18 24 30 36 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 25 GS -50 1.2 = 8A = 10V 2.0 1.5 1.0 0.5 0.0 -50 0.95 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 1.1 1.0 0.9 0.8 3-2006 V D 1.00 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7270 Rev B I 1.05 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 2.5 1.10 0.90 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VGS=7V, 10V 24 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 16 0 6V 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 30 VGS=15V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 24 APT6040B_SVFR(G) 30 VGS=6V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 30 10S OPERATION HERE LIMITED BY RDS (ON) 5,000 100S 10 Ciss C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 50 1mS 5 10mS 1 100mS TC =+25C TJ =+150C SINGLE PULSE 0.5 D 50 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE = 8A VDS=120V 16 Crss 50 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I Coss 500 100 1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 1,000 DC 0.1 VDS=300V 12 VDS=480V 8 4 0 APT6040B_SVFR(G) 10,000 100 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE TJ =+150C 10 TJ =+25C 5 1 .5 .1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 3 D PAK (SVFR) Package Outline e1 SAC: Tin, Silver, Copper e3 100% Sn 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) TO-247 (BVFR) Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 4.50 (.177) Max. 3-2006 Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 050-7270 Rev B 13.41 (.528) 13.51(.532) 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Drain Source 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated