AP03N40AJ-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement G RoHS Compliant & Halogen-Free BVDSS 400V RDS(ON) 2.6 ID 2.7A S Description G D The AP03N40A provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. S TO-251(J) The TO-251 package is widely preferred for commercial-industrial throughhole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 400 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, V GS @ 10V 2.7 A 10 A 44.6 W 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 2.8 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data & specifications subject to change without notice 1 201009201 AP03N40AJ-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 400 - - V VGS=10V, ID=1.3A - - 2.6 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=1.3A - 2 - S IDSS Drain-Source Leakage Current VDS=320V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=1A - 11 17.5 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=320V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 5 - nC 2 td(on) Turn-on Delay Time VDD=200V - 8 - ns tr Rise Time ID=1A - 4.5 - ns td(off) Turn-off Delay Time RG=3.3 - 17 - ns tf Fall Time VGS=10V - 10 - ns Ciss Input Capacitance VGS=0V - 370 600 pF Coss Output Capacitance VDS=25V - 45 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 9 - pF Rg Gate Resistance f=1.0MHz - 3.2 6.4 Min. Typ. IS=1.3A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=1A, VGS=0V, - 150 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 820 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP03N40AJ-HF 6 3 10V 8.0V 7.0V T C =25 C ID , Drain Current (A) 5 4 6.0V 3 2 10V 8.0V 7.0V 6.0V T C =150 o C ID , Drain Current (A) o 2 V G =5.0V 1 V G =5.0V 1 0 0 0 8 16 24 0 32 V DS , Drain-to-Source Voltage (V) 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 I D =1mA I D =1.3A V G =10V Normalized RDS(ON) Normalized BVDSS (V) 1.1 1 2 1 0.9 0 0.8 -50 0 50 100 -50 150 0 50 100 150 T j , Junction Temperature ( o C ) o T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.6 2 I D =250uA 1.6 Normalized VGS(th) (V) IS (A) 1.2 1.2 T j = 150 o C T j = 25 o C 0.8 0.8 0.4 0.4 0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP03N40AJ-HF 12 10 500 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 600 I D =1A V DS =320V 8 400 6 300 4 200 2 100 0 C iss C oss C rss 0 0 4 8 12 16 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 10us ID (A) 10 Operation in this area limited by RDS(ON) 100us 1 1ms o T c =25 C Single Pulse 10ms 100ms DC 0.1 1 10 100 1000 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4