DATA SH EET
Product specification
Supersedes data of 1999 Jun 29 2000 Jan 05
DISCRETE SEMICONDUCTORS
BF862
N-channel junction FET
book, halfpage
M3D088
2000 Jan 05 2
NXP Semiconductors Product specification
N-channel junction FET BF862
FEATURES
High transition frequency for excellent sensitivity in
AM car radios
High transfer admitt ance.
APPLICATIONS
Pre-amplifiers in AM car radios.
DESCRIPTION
Silicon N-channel s ymme trical junction field-effect
transistor in a SOT23 package. Drain and source are
interchangeable.
PINNING SOT23
PIN DESCRIPTION
1source
2drain
3gate
handbook, halfpage
s
d
g
21
3MAM036
Top view
Fig.1 Simplified outline and symbol.
Marking code: 2Ap.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 20 V
VGSoff gate-source c ut-off voltage 0.3 0.8 1.2 V
IDSS drain-source current 10 25 mA
Ptot total power dissipation Ts90 C300 mW
yfstransfer admittance 35 45 mS
Tjjunction temperature 150 C
CAUTION
This product is supplied in anti-s tatic packing to prevent dama ge ca used by electrostatic dis charge during transpor t
and handling.
2000 Jan 05 3
NXP Semiconductors Product specification
N-channel junction FET BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTE RISTI CS
Note
1. Soldering point of the gate lead.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 20 V
VDG drain-gate voltage 20 V
VGS gate-source v oltage 20 V
IDS drain-source current 40 mA
IGforward gate current 10 mA
Ptot total power dissipation Ts90 C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tjjunction temperature 150 C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering
point note 1 200 K/W
handbook, halfpage
040 Ts (°C)
Ptot
(mW)
80 160
400
300
100
0
200
120
MCD808
Fig.2 Power derating curve.
2000 Jan 05 4
NXP Semiconductors Product specification
N-channel junction FET BF862
STATIC CH ARA CTERISTICS
Tj=25C; unless otherwise specified.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25C; VGS =0; V
DS = 8 V; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)GSS gate-source br eakdown voltage IGS =1A; VDS =0 20 V
VGS gate-source forward voltage VDS =0; I
G=1mA 1V
VGSoff gate-source c ut-off voltage VDS =8V; I
D=1A0.3 0.8 1.2 V
IGSS reverse gate current VGS =15 V; VDS =0 1nA
IDSS drain-source current VGS =0; V
DS =8V 10 25 mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
yfscommon source fo rward transfer
admittance Tj=25C3545mS
gos common source output conductance Tj=25C180 400 S
Ciss input capacitance f = 1 MHz 10 pF
Crss reverse transfer capacitance f = 1 MHz 1.9 pF
enequivalent noise input voltage f = 100 kHz 0.8 nV/Hz
fTtransition frequency 715 MHz
2000 Jan 05 5
NXP Semiconductors Product specification
N-channel junction FET BF862
handbook, halfpage
0−0.5 −1VGSoff (V)
IDSS
(mA)
−1.5
40
30
10
0
20
MCD809
Fig.3 Drain saturation current as a fu nction of
gate-sourc e cut-off voltage; typical values.
VDS =8V; T
j=25C.
handbook, halfpage
0
300
200
100
010 20 30
MCD810
IDSS (mA)
gos
(μS)
Fig.4 Common-source ou tput conductanc e as a
function of drain saturation current;
typical values.
VDS =8V; T
j=25C.
handbook, halfpage
01020
IDSS (mA)
yfs
(mS)
30
60
50
30
20
40
MCD811
Fig.5 Forward transfer admittance as a function
of drain saturation current; typ i cal values.
VDS =8V; T
j=25C.
handbook, halfpage
0
60
40
20
010 20 30
MCD812
ID (mA)
yfs
(mS)
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
VDS =8V; T
j=25C.
2000 Jan 05 6
NXP Semiconductors Product specification
N-channel junction FET BF862
handbook, halfpage
−1
30
20
10
0−0.8 0
typ
min
−0.6 −0.4 −0.2
MCD813
VGS (V)
ID
(mA)
max
Fig.7 Drain current as a function of gate-source
voltage; typical values.
VDS =8V; T
j=25C.
handbook, halfpage
20
04 12
08
4
8
12
16
MCD814
VDS (V)
ID
(mA)
VGS = 0 V
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
Fig.8 Drain current as a function of drain-source
voltage; typical values.
VDS =8V; T
j=25C.
handbook, halfpage
250 51015 VDG (V)
IG
(nA)
20
−104
−102
−1
−10−2
−10−4
MCD815
10 mA
1 mA
0.1 mA
IGSS
ID = 20 mA
Fig.9 Gate current as a function of drain-gate
voltage; typical values.
VDS =8V; T
j=25C.
handbook, halfpage
−8−6−40
Cis
Crs
VGS (V)
C
(pF)
12
0
4
8
−2
MCD816
Fig.10 Input and reverse transfer capacitance as
functions of gate-sou rce voltage; typical
values.
VDS = 8 V; f = 1 MHz; Tj=25C.
2000 Jan 05 7
NXP Semiconductors Product specification
N-channel junction FET BF862
handbook, halfpage
102
10
1
10−1
10−2
MCD817
10−1110 f (MHz)
yis
(mS)
102103
gis
bis
Fig.11 Common- so urce input admittance as a
function of frequency; typical values.
VDS =8V; V
GS =0; T
amb =25C.
handbook, halfpage
10
1
10−1
MCD818
10−1
−102
−10
110 f (MHz)
yrs
(mS)
ϕrs
(deg)
102
−103
103
ϕrs
yrs
Fig.12 Common-source re verse admittance as a
function of frequency; typical values.
VDS =5V; V
G2 =4V.
ID=15mA; T
amb =25C.
handbook, halfpage
102
10
1
MCD819
10−1
−10
−1
110 f (MHz)
yfs
(mS)
ϕfs
(deg)
102
−102
103
yfs
ϕfs
Fig.13 Common-sourc e forward transfe r
admittance as a function of frequency;
typical values.
VDS =8V; V
GS =0; T
amb =25C.
handbook, halfpage
102
10
1
10−1
MCD820
10−1110 f (MHz)
yos
(mS)
102103
gos
bos
Fig.14 Common-source output admittance as a
function of frequency; typical values.
VDS =8V; V
GS =0; T
amb =25C.
2000 Jan 05 8
NXP Semiconductors Product specification
N-channel junction FET BF862
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
2000 Jan 05 9
NXP Semiconductors Product specification
N-channel junction FET BF862
DATA SHEET STATUS
Notes
1. Please consult the most recently issued documen t b efore initiating or completing a design.
2. The product status of device (s) described in this document may have changed since this document was publishe d
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This doc ume nt contains data from the objective specification for pro duc t
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
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2000 Jan 05 10
NXP Semiconductors Product specification
N-channel junction FET BF862
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values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
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Characteristics sections of this document is not warranted.
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Printed in The Netherlands R77/03/pp11 Date of release: 2000 Jan 05