Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM (1024 x 8) 82S181A a FEATURES DESCRIPTION The 828181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic | Input loading: -150nA max fusing procedure. The 828181A is supplied with all outputs at a On-chip address decoding logical Low. Outputs are programmed to a logic High level at any specified address by fusing the Ni-Cr link matrix. @ Address access time: 55ns max Four chip enable inputs P P This device includes on-chip decoding and 4 chip enable inputs for Outputs: 3-State ease of memory expansion. It features 3-State outputs for @ No separate fusing pins optimization of word expansion in bused organizations. Unprogrammed outputs are Low level ORDERING INFORMATION Fully TT! ti uly TTL compatbie DESCRIPTION ORDER CODE | pracnaroR: APPLICATIONS 24-pin Ceramic DIP Prototyping/volume production (600mit-wide) 825181 ANBJA GDIP1-T24 @ Sequential controllers 24-pin Ceramic Flat Pack 82S181A/BKA GDFP2-F24 Microprogramming 28-Pin Ceramic LLCC 828181A/B3A CQCC2-N28 Hardwired algorithms * MIL-STD 1835 or Appendix A of 1995 Military Data Handbook Control store @ Random logic Code conversion ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING Vv Supply voltage +7 Vv Input voltage 45.5 Vv Off-State +6.5 T, Operating temperature -55 to +125 T, -65 to +150 PIN CONFIGURATION LLCC LEAD CONFIGURATION As Ag Az NC Vcc Ag Ag v . a4 [5] Ey 8 hy aa [6] CEQ a Ag [7] CEg ne | 3] NC CEQ Ay [9 ce, Oz Og GND NC a4 05 06 8 BLES 9410826 0085876 760 = uctober 14, 1987 1090 853-0263 F00187Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM (1024 x 8) 82S181A BLOCK DIAGRAM mo AboREss | 1:64 LINES DECODER roi} LL | 64 x 128 MATRIX | &y 116 | 216 | 1:16 | 1:16 1:16 | 1:16 | 1:16 | 1:16 Ag 0} Mux | Mux | MUX { Mux | Mux | Mux | Mux | MUX ee 1 ee T ) 8 3-STATE ORIVERS a | 1 O02 03 04 O05 Og 7 Og OUTPUT LINES DC ELECTRICAL CHARACTERISTICS -55C < Ty < +125C, 4.5V< Voc < .5V SYMBOL PARAMETER TEST CONDITIONS! 2 LIMITS UNIT Min | Typ | Max input voltage? Vit Low 0.8 v Vin High 2.0 Vv Vik Clamp Voc = 4.5V, || = -18MA -0.8 -1.2 v Output voltage? Voc = 4.5V, CE, 2 = Low, CE3 4 = High Vor Low lo =9.6mA 05 Vv Vou High lo = -2MA 2.4 Vv Input current? Veco = 5.5V i Low V) = 0.45V -150 HA NH High V,=5.5V 40 pA Output current? Veo = 5.5V loz Hi-Z state CE, 2= High, CE34 = Low, Vo =5.5V 40 pA CE, 2= High, CEs 4 = Low, Vo = 0.4V -40 HA los Short circuit? CE; 2 = Low, CE3 4 = High, Vo = OV -15 -85 mA Voc = 5.5V, High stored Supply current ioc |__CE12=High, CEs.4= Low, Voo=5.5V__| | 125 | 185 | ma Capacitance CE, 25 High, Voc = 5.0V Cin Input Vi =2.0V 5 10 pF Court Output Vo = 2.0V 8 13 pF October 14 1987 1091 M@@ 7110826 0085877 LT?Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM (1024 x 8) 825181A AC ELECTRICAL CHARACTERISTICS -55C < Ta < +125 C, 4.5V < Voc < 5.5V SYMBOL PARAMETER TO FROM LIMITS UNIT Min Typ? Max taa Access time* Output Address 45 55 ns tce Access time4 Output Chip Enable 25 40 ns top Disable time Output Chip Disable 25 40 ns NOTES: 1. Positive current is defined as into the terminal referenced. 2. All voltages with respect to network ground. 3. Duration of short circuit should not exceed 1 second. 4. Tested at an address cycle time of ips. | 5. Typical values are at Voc = SV, Ta = +25 C. 6. Guaranteed, but not tested. TEST LOAD CIRCUITS VOLTAGE WAVEFORMS Yoc 27 w ay OY I necarve \ vy vu Ay 0.3V 0.3 wv oO") aa le TTHL(th mune) | Le Oo] ay 5.0V Oo Ag oto TTLH(tr) trun > K- nov Oo" Ag Ry 27 27V POSITIVE O*1 45 pur | PULSE VM VM Oo AG o2 tw 0.3V ov O*1 az cL Oo Ag Rg aoa {INCLUDES SCOPE Input Pulse Definitions O*|cte, EAI AND JI cE, cEq CAPACITANCE) 7 INPUT PULSE CHARACTERISTICS = ~ Vu Rep. Rate | Pulse Width} = try true 1.5V 1MHz 500ns <5ns <5ns NOTE: Ry = 4700, Rg = 1K, CL = 50pF MB 7110826 0085878 533 October 14, 1987 1092Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM (1024 x 8) 82S181A TIMING DIAGRAMS 3.0V ADDRESS * vu ov cE ov Vou Yu Vou re Vig = 1.5V 3.0V ADDRESS ov \ 3.0V cE ~ YM Ym 4 ov You HLZ Vet HHZ Vou < tcE >| nt Vou vu You * 'ceE Vig = 1.5V M8 7110826 00854879 47T October 14, 1987 1093