TICP106 SERIES SILICON CONTROLLED RECTIFIERS 2 A Continuous On-State Current 15 A Surge-Current Glass Passivated Wafer A 400 V to 600 V Off-State Voltage K Max IGT of 200 A Package Options LP PACKAGE (TOP VIEW) G 1 2 3 MDC1AA PACKAGE PACKING PART # SUFFIX LP Bulk (None) LP with fomed leads Tape and Reel R LP PACKAGE WITH FORMED LEADS (TOP VIEW) G 1 2 3 A K E T E L O S B O MDC1AB absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TICP106D Repetitive peak off-state voltage (see Note 1) Repetitive peak reverse voltage SYMBOL TICP106M TICP106D TICP106M Continuous on-state current at (or below) 25C case temperature (see Note 2) VDRM VRRM VALUE 400 600 400 600 UNIT V V IT(RMS) 2 A Surge on-state current (see Note 3) ITSM 15 A Peak positive gate current (pulse width 300 s) IGM 0.2 A PG(AV) 0.3 W Operating case temperature range TC -40 to +110 C Storage temperature range Tstg -40 to +125 C TL 230 C Average gate power dissipation (see Note 4) Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k. 2. These values apply for continuous dc operation with resistive load. Above 25C derate linearly to zero at 110C. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 4. This value applies for a maximum averaging time of 20 ms. MARCH 1988 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TICP106 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT VGT Repetitive peak off-state current Repetitive peak reverse current Gate trigger current TEST CONDITIONS TYP MAX UNIT VD = rated VDRM RGK = 1 k 20 A VR = rated VRRM IG = 0 200 A VAA = 12 V RL = 100 200 A 1 V 5 mA 1.5 V RL = 100 Gate trigger voltage VAA = 12 V IH Holding current VAA = 12 V RGK = 1 k VT On-state voltage IT = 1 A (see Note 5) NOTE MIN RGK = 1 k tp(g) 20 s 5 tp(g) 20 s 0.4 Initiating IT = 10 mA 5: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. E T E L O S B O 2 MARCH 1988 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.