TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
1
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
LP PACKAGE
(TOP VIEW)
MDC1AA
G
A
K
1
2
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
MDC1AB
G
A
K
1
2
3
●2 A Continuous On-State Current
●15 A Surge-Current
●Glass Passivated Wafer
●400 V to 600 V Off-State Voltage
●Max IGT of 200 µA
●Package Options
PACKAGE PACKING PART # SUFFIX
LP Bulk (None)
LP with fomed leads Tape and Reel R
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 25°C derate linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1) TICP106D
TICP106M VDRM
400
600 V
Repetitive peak reverse voltage TICP106D
TICP106M VRRM
400
600 V
Continuous on-state current at (or below) 25°C case temperature (see Note 2) IT(RMS) 2 A
Surge on-state current (see Note 3) ITSM 15 A
Peak positive gate current (pulse width ≤ 300 µs) IGM 0.2 A
Average gate power dissipation (see Note 4) PG(AV) 0.3 W
Operating case temperature range TC-40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 3.2 mm from case for 10 seconds TL230 °C
OBSOLETE
TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
2
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTE 5: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current VD = rated VDRM RGK = 1 kΩ20 µA
IRRM
Repetitive peak
reverse current VR= rated VRRM IG = 0 200 µA
IGT Gate trigger current VAA = 12 V RL= 100Ωtp(g) ≥ 20 µs 5 200 µA
VGT Gate trigger voltage VAA = 12 V RL= 100Ω
RGK =1kΩtp(g) ≥ 20 µs 0.4 1 V
IHHolding current VAA = 12 V RGK =1kΩInitiating IT = 10 mA 5mA
VTOn-state voltage IT=1A (see Note 5) 1.5 V
OBSOLETE
