Welcome to the Web site of THOMSON-CSF Laser Diodes (TLD) your partner in Optoelectronic. TLD offers
a large variety of High Power Laser Diodes (795 - 980nm), specific
optoelectronic functions, and laser diode components
for gas sensors. Developped and hosted by Webnet.
TLD,Laser Diode Manufacturer,Optoelectronic Company,Infra Red Laser Diode,Semiconductor Laser Diode, Power Laser Diode,Laser Diode Bar Array,Linear Diode
Bar Array,Laser Diode Stack,Laser Diode Pumping,Solid State Laser, Collimated Laser Diode Bar,Fiber Coupling Laser Diode,Optoelectronic modules,Optoelectronic
Transmitter, Optoelectronic Receiver,Laser Diode Gas Sensor,Laser Diode Driver
Welcome to Thomson-CSF Laser Diodes' site
Company
profile References Products News Contacts
Contacts
FRANCE
THOMSON-CSF Laser Diodes (TLD)
Route Départementale 128
BP 46 - 91401 ORSAY Cedex
FRANCE
Tel: 33 (0) 1 69 33 06 61
Fax: 33 (0)1 69 33 06 62
E-Mail: infotld@tld.thomson-csf.com Access map (57 Kb)
U.K.
GB ENTREPRISES
George W. BAILEY
Reeds Cottage
Appleshaw
ANDOVER, SP11 9AA
UNITED KINGDOM
Tel: 44 (0) 1264 772680
Fax: 44 (0) 1264 771590
E-mail: gbeldbl@globalnet.co.uk
TLD : Contacts
JAPAN
Kazuo CHOH
2 - 16 - 2 Minami - Kamata
Ohta - ku
TOKYO 144
JAPAN
Tel: (81 3) 3734 5020
Fax: (81 3) 3734 5021
E-Mail: kazuocho@cb.mbn.or.jp
KOREA
KASCO
#RA- 201, Daeduk High-Tech
Distribution Center
399-8 Do Ryong-Dong
Yu Sung-Ku
TAEJON
KOREA
Tel: (82 42) 862 7082
Fax: (82 42)862 7242
E-Mail: kasco@soback.kornet.nm.kr
INDIA
THOMSON TUBES ELECTRONIQUES
M-56 Commercial Complex
Greater Kailash-II Market
NEW DELHI - 110 048
Tel: (91 11) 644 7883
Fax: (91 11) 621 3357
E-Mail: duggal@giasdl01.vsnl.net.in
TLD : Contacts
Company
profile References Products News Contacts
Company profile
THOMSON-CSF Laser Diodes (T.L.D.), a 100% subsidary of THOMSON-CSF Group, has over
20 years experience in design and development of Laser Diode components.
T.L.D. produce and commercialize a broad range of high power
laser diodes, laser diodes for gas sensors and association of
complex optoelectronic functions. Our leading expertise is
supported by the mastery of all the basic technologies, a strong
effort in research and a good patent coverage.
Based upon a strong R&D expertise, T.L.D. started to
commercialize laser diode module in 1982, proposed the first
1300nm diode module in 1985 with a full MOCVD technology
and developed power laser diodes since 1987.
Our goal is to design and manufacture large quantity of highly
reliable products at the state of the art in performance.
T.L.D. activity covers 3 main domains:
Power Laser Diodes designed for CW or Quasi-CW applications. Based upon the 1cm bar
array, products are proposed on passive or actively cooled package with single bar and
Stacked arrays configurations, other versions are with fast axis collimation and fiber
coupled,
●
Specific single mode laser diodes modules for gas sensors and laser diodes for
instrumentation,
●
Integration of Optoelectronic devices with specific electronic design to realize Custom
Optoelectronic Functions for space and avionics applications.
●
Manufacturing facilities
T.L.D. is located at ORSAY, 15 miles from center of Paris, France in a high technology area.
T.L.D. is surrounded by major High Schools of Engineers (Polytechnique, Optics School,
Electronics School,...) and the University of Sciences of Paris.
TLD : Company Profile
We manage all the technological aspects in-house: epitaxy, semi-conductor process, packaging,
electronic design, couplings (fibers and lenses), characterizations, burn-in and selection. The
manufacturing facilities, including clean rooms, extends over 30,000 square-foot.
Joint programs with Thomson Corporate Research Laboratories allows mastery of advanced
components design and reliability improvements to propose state of the art products in
performance and quality.
TLD : Company Profile
Company
profile References Products News Contacts
References
Specific optoelectronic functions
Very high speed optoelectronic functions for high data rate communications
between satellites
Georges Folcke, Jean Marc Defrancq and Dominique Geffroy, Thomson CSF
Laser Diodes (Orsay) France
Bernard Roy, Matra Marconi Space (Toulouse) France
TLD expertise in the optoelectronic functions.
Laser diodes for gas sensors
Laser Diode Spectrometer system
Power laser diodes
Air cooled diode-end-pumped frequency quadrupled Nd:YAG Laser
G. Feugnet, A. Brignon, J.P. Pocholle
Advanced Solid State Conference (Feb.,1998)
High efficiency intracavity doubled diode-end-pumped Nd:YVO4 laser
G. Feugnet, C. Bussac, Ch. Larat, M. Schwarz, J.P. Pocholle
OE'Lase Conf. proceedings, SPIE Vol.2698/105, 1996
Gain-Switched Solid State Laser pumped by High Brightness Laser Diode
Ch. Larat, G. Feugnet, M. Schwarz, J.P. Pocholle
CLEO Europe Conference,1996
Auto-stacking of high power laser diodes arrays: a cost effective approach for
delivering 10 kW/cm2
T. Fillardet, E. Brousse, J.P. Duchemin, G. Volluet, J.P. Hirtz
CLEO Europe Conference,1996
High repetition rate solid-state laser for space communications
TLD : References
CH. Larat, M. Schwarz, J.P. Pocholle, G. Feugnet, M. Papuchon
SPIE Cof. proceedings, Vol. 2381, 256, 1995
High efficiency TEMoo Nd:YVO4 laser longitudinally pumped by a high power
laser diode array
G. Feugnet, C. Bussac, Ch. Larat, M. Schwarz, J.P. Pocholle
Optics Letters, Vol. 20, No2, January 15,1995
TEMoo surface emitting laser diode longitudinally pumped Nd:YVO4 laser
G. Feugnet, M. Schwarz, Ch. Larat, J.P. Pocholle
Optics Letters, Vol. 18, No 24, December 15, 1993
Efficient monolithic surface emitting laser diode 2D arrays side-pumped
Nd:YAG slab
Ch. Larat, M. Schwarz, G. Feugnet, J.P. Pocholle
Advanced Solid State Laser, 1993
High power surface emitting laser diode pumping of Nd:YAG slab
Ch. Larat, M. Schwarz, J.P. Pocholle
Electronics Letters, Vol. 28, No 17, 13th August 1992
TLD : References
Company
profile References Products News Contacts
Products
Our products families :
Products not available for U.S. market
Power Laser Diodes●
Laser Diodes for Gas Sensors●
Specific optoelectronic functions●
Power Laser Diodes
T.L.D. proposes a broad range of Power Laser Diode products in the 795nm to
980nm wavelength for solid state laser pumping and direct use of high power.
Standard products, single diode bar or stacked arrays, are conductively or
actively cooled packaged.
Bare bars can also be supplied for custom applications.
Request information
Laser Diodes for Gas Sensors
These Laser Diode products emit accurate wavelength and can be designed for
ppm measurements of a large range of Gas species.
Request information
Specific optoelectronic functions
A long expertise in the design of complex optoelectronic functions qualified
for a wide range of environments allows to propose customized Transmitters
and Receivers for professional applications.
Request information
TLD : Products
TLD : Products
TLD : News
Bienvenue sur le site Web de THOMSON-CSF Laser Diodes (TLD) votre partenaire en
Optoélectronique. TLD offre une gamme complète de Diodes Laser de Puissance (795-980nm), un
service de conception de fonctions Optoélectroniques spécifiques et des composants diode laser pour
la détection de gaz. Développé et hébergé par Webnet.
TLD,Fabricant de Diodes Laser,Compagnie Optoelectronique,Diodes laser Infra-Rouges, Diodes laser a Semi-conducteur,Diodes Laser de Puissance,Diode Laser
Barrette,Diode Laser Barrette a Reseau Lineaire, Stack, Empilement de Diodes Laser,Pompage par Diode Laser,Lasers Solides,Diode Laser barrette Collimatee,
Couplage de Diode Laser dans une Fibre Optique,Modules Optoelectroniques,Emetteur Optoelectronique Recepteur Optoelectronique,Diodes Laser pour Capteur de
Gaz,Circuit de Commande de Diode Laser
Bienvenue sur le site de Thomson-CSF Laser Diodes
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Contacts
FRANCE
THOMSON-CSF Laser Diodes (TLD)
Route Départementale 128
BP 46 - 91401 ORSAY Cedex
FRANCE
Tel: 33 (0) 1 69 33 06 61
Fax: 33 (0)1 69 33 06 62
E-Mail: infotld@tld.thomson-csf.com Plan d'accès (57 Ko)
U.K.
GB ENTREPRISES
George W. BAILEY
Reeds Cottage
Appleshaw
ANDOVER, SP11 9AA
UNITED KINGDOM
Tel: 44 (0) 1264 772680
Fax: 44 (0) 1264 771590
E-mail: gbeldbl@globalnet.co.uk
TLD : Contacts
JAPAN
Kazuo CHOH
2 - 16 - 2 Minami - Kamata
Ohta - ku
TOKYO 144
JAPAN
Tel: (81 3) 3734 5020
Fax: (81 3) 3734 5021
E-Mail: kazuocho@cb.mbn.or.jp
KOREA
KASCO
#RA- 201, Daeduk High-Tech
Distribution Center
399-8 Do Ryong-Dong
Yu Sung-Ku
TAEJON
KOREA
Tel: (82 42) 862 7082
Fax: (82 42)862 7242
E-Mail: kasco@soback.kornet.nm.kr
INDIA
THOMSON TUBES ELECTRONIQUES
M-56 Commercial Complex
Greater Kailash-II Market
NEW DELHI - 110 048
Tel: (91 11) 644 7883
Fax: (91 11) 621 3357
E-Mail: duggal@giasdl01.vsnl.net.in
TLD : Contacts
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Présentation
THOMSON-CSF Laser Diodes (T.L.D.), filiale à 100%
du Groupe THOMSON-CSF possède plus de 20 ans d'expérience
dans l'étude et le développement de composants à Diode Laser.
T.L.D. développe et commercialise une gamme complète de
Diodes Laser de Puissance, de Diodes Laser pour la détection de
gaz et de fonctions Optoélectroniques complexes. T.L.D., qui
maîtrise toutes les technologies de l'Optoélectronique, a acquis
une position de Leader International. Cette position est consolidée
grâce à un portefeuille de brevet important et par un effort de
recherche constant.
La commercialisation des premiers modules à Diode Laser a été
lancée en 1982 à partir du savoir-faire de R&D acquis au
Laboratoire Central de Recherches (LCR). Les premiers modules
à Diodes 1300nm en technologie MOCVD ont été proposés par THOMSON dès 1985. A partir de
1987 T.L.D. développe les technologies de Diodes Laser de Puissance.
La vocation de T.L.D. est de maîtriser une large gamme de composants et modules
Optoélectroniques et de fabriquer des produits qualifiés suivant des procédés assurant un haut
niveau de fiabilité.
L'activité de T.L.D. concerne trois domaines essentiels:
Diodes Laser de Puissance réalisées pour des applications nécessitant des
fonctionnements Continu (CW) et Quasi-continu (QCW). Ces produits sont définis à partir
de Diodes Laser Barrettes de 1cm de large. La gamme d'assemblages proposés: embases à
refroidissement passif ou actif, empilements de barrettes en Stack, barrette à faisceau
collimaté ou version fibrée, permet de répondre à la large diversité des applications ;
●
La détection de gaz et l'instrumentation à partir de Modules à Diode Laser monofréquence
adaptés ;
●
La réalisation de Fonctions Optoélectroniques Spécifiques destinées à des applications,
entre autres, dans les domaines du Spatial et de l'Avionique.
●
Moyens Industriels
Les moyens Industriels de T.L.D. sont localisés à Orsay, c'est à dire à 25 kilomètres du centre de
Paris dans un environnement de hautes technologies. On trouve en effet dans un rayon de quelques
TLD : Presentation Institutionnelle
kilomètres différentes Ecoles d'Ingénieurs prestigieuses (Ecole Polytechnique, Ecole Supérieure
d'Electricité, Ecole Sup'Optique,...) et l'Université des Sciences de Paris.
Toutes les technologies du métier de l'Optoélectronique sont maîtrisées par T.L.D. : croissance
épitaxiale, procédés semi-conducteur, assemblages, conception électronique, couplages optiques
(fibres et lentilles), caractérisations, tests et sélections. Les moyens de fabrication, essentiellement
en salles blanches, s'étendent sur 3000 m2.
Des programmes d'études en association avec le Laboratoire Central de Recherches (L.C.R.) de
THOMSON-CSF permettent d'adapter les performances des composants pour proposer des Diodes
Laser à l'état de l'art au point de vue performances avec des technologies assurant un niveau de
fiabilité élevé.
TLD : Presentation Institutionnelle
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Références
Specific optoelectronic functions
Very high speed optoelectronic functions for high data rate communications
between satellites
Georges Folcke, Jean Marc Defrancq and Dominique Geffroy, Thomson CSF
Laser Diodes (Orsay) France
Bernard Roy, Matra Marconi Space (Toulouse) France
TLD expertise in the optoelectronic functions.
Laser diodes for gas sensors
Laser Diode Spectrometer system
Power laser diodes
Air cooled diode-end-pumped frequency quadrupled Nd:YAG Laser
G. Feugnet, A. Brignon, J.P. Pocholle
Advanced Solid State Conference (Feb.,1998)
High efficiency intracavity doubled diode-end-pumped Nd:YVO4 laser
G. Feugnet, C. Bussac, Ch. Larat, M. Schwarz, J.P. Pocholle
OE'Lase Conf. proceedings, SPIE Vol.2698/105, 1996
Gain-Switched Solid State Laser pumped by High Brightness Laser Diode
Ch. Larat, G. Feugnet, M. Schwarz, J.P. Pocholle
CLEO Europe Conference,1996
Auto-stacking of high power laser diodes arrays: a cost effective approach for
delivering 10 kW/cm2
T. Fillardet, E. Brousse, J.P. Duchemin, G. Volluet, J.P. Hirtz
CLEO Europe Conference,1996
High repetition rate solid-state laser for space communications
CH. Larat, M. Schwarz, J.P. Pocholle, G. Feugnet, M. Papuchon
SPIE Cof. proceedings, Vol. 2381, 256, 1995
High efficiency TEMoo Nd:YVO4 laser longitudinally pumped by a high power laser
diode array
TLD : References
G. Feugnet, C. Bussac, Ch. Larat, M. Schwarz, J.P. Pocholle
Optics Letters, Vol. 20, No2, January 15,1995
TEMoo surface emitting laser diode longitudinally pumped Nd:YVO4 laser
G. Feugnet, M. Schwarz, Ch. Larat, J.P. Pocholle
Optics Letters, Vol. 18, No 24, December 15, 1993
Efficient monolithic surface emitting laser diode 2D arrays side-pumped Nd:YAG
slab Ch. Larat, M. Schwarz, G. Feugnet, J.P. Pocholle
Advanced Solid State Laser, 1993
High power surface emitting laser diode pumping of Nd:YAG slab
Ch. Larat, M. Schwarz, J.P. Pocholle
Electronics Letters, Vol. 28, No 17, 13th August 1992
TLD : References
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Produits
Nos familles de produits :
Produits non commercialisable sur le marché des Etats Unis
Diodes laser de puissance●
Diodes laser pour la détection de gaz●
Fonctions optoélectroniques spécifiques●
Diodes laser de puissance
T.L.D. offre une gamme complète de produits Diodes Laser de Puissance
couvrant une large fenêtre infrarouge de 795nm à 980nm, destinés à la fois
aux applications de pompage de lasers solides et aux utilisations de sources en
'direct'.
Les produits standards sont la diode laser 'barrette' sur embase et les
assemblages en Stack. La gestion thermique pouvant être assurée à travers des
boîtiers à refroidissement passif ou actif.
Des diodes Barrettes non montées peuvent aussi être proposées pour des
applications spécifiques.
Pour plus d'informations...
Diodes laser pour la détection de gaz
Les Modules à Diodes Laser proposés sont des sources émettant à une
longueur d'onde très précise adaptée pour permettre de détecter différents
types de Gaz.
Pour plus d'informations...
Fonctions optoélectroniques spécifiques
T.L.D. possède une très forte expérience dans la réalisation de fonctions
Optoélectroniques associant des composants d'émission et de réception à leur
électronique de commande. Ces fonctions mettent en oeuvre des technologies
qualifiées dans des environnements sévères adaptés à la conception et au
développement d'Emetteurs et de Récepteurs Spécifiques pour des
applications professionnelles
Pour plus d'informations...
TLD : Produits
TLD : Produits
TLD : Nouveautés
http://www.laser-diodes.thomson-csf.com/images/carte_tld.gif
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Nouveautés
23/08/1999
Performances des barrettes fibrées
Les barrettes fibrées de la série TH-C17xx-Fy sont des sources fibrées à forte densité
de puissance émettant en régime continu.
Ces puissances sont disponibles dans les deux fenêtres de longueur d'onde, 795 à
860nm et 940 à 985nm
TH-C1715-F4 15W dans une fibre de 400µm de diamètre de coeur avec une
ouverture numérique de 0.22
TH-C1720-F6 20W dans une fibre de 600µm de diamètre de coeur avec une
ouverture numérique de 0.22
TH-C1722-F9 22W dans une fibre de 940µm de diamètre de coeur avec une
ouverture numérique de 0.22
TLD : Nouveautés
TLD : Nouveautés
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Nouveautés
12/05/1998
940nm - 980nm
TLD starts to offer 940nm - 980nm power laser diode bar arrays. Products are
proposed for 20W CW to 30W CW with overall efficiency over 40%. Standard
operating currents are 30A @ 20W CW and 42A @ 30W CW with operating voltage
of 1.5V. The bars can be mounted on conductively cooled package ('S' type) or on
actively cooled package: 'P' type or 'R' type for linear associations.
Pulsed diodes operating QCW can also be proposed for 60W to 80W QCW. These
bars can be assembled in all the stack configurations.
Specific operating conditions can be discussed and designed.
TLD : Nouveautés
TLD : Nouveautés
TLD : Nouveautés
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Diodes Laser de Puissance
CW PRODUCTS
20W to 30W CW Linear bar array on conductively cooled package
TH-C1420-S
TH-C1725-S / TH-C1730-S
TH-C5520-S / TH-C5530-S (915 nm to 980 nm)
Pour plus d'informations
20W to 30W CW Linear bar array with actively cooled package
TH-C1420-R(n)
TH-C1420-P
TH-C1725-R(n) / TH-C1730-R(n)
TH-C1725-P / TH-C1730-P
TH-C5520-P / TH-C5530-P (915 nm to 980 nm)
Pour plus d'informations
Collimated diode bar
TH-C1417-PO
TH-C1725-PO
Pour plus d'informations
Fiber-coupled
TH-C1310-F
TH-C1315-F
Pour plus d'informations
QCW PRODUCTS
TLD : Produits - Diodes Laser de Puissance
60W to 100W QCW Diode bar on conductively cooled package
TH-Q1201-A
TH-Q1301-A
TH-Q1401-A
Pour plus d'informations
360W to 600W QCW Conductively cooled Stacked array
TH-Q1206-A
TH-Q1306-A
TH-Q1406-A
Pour plus d'informations
600W to 1kW QCW Conductively cooled Stacked array
TH-Q1210-B
TH-Q1310-B
TH-Q1410-B
Pour plus d'informations
300W to 2kW QCW Actively cooled Stacked array
TH-Q12xx-C
TH-Q13xx-C
Pour plus d'informations
500W to 2.5kW QCW Actively stacked array
TH-Q14xx-C
Pour plus d'informations
High temperature stacked array
TH-Q1324-D
Pour plus d'informations
1kW QCW High brightness Stack array
TH-Q1312-AS
TH-Q1410-AS
Pour plus d'informations
TLD : Produits - Diodes Laser de Puissance
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Demande d'informations
Version PDF
Retour liste
TH-C1420-S
20W CW LINEAR BAR ARRAY
DESCRIPTION
The TH-C1420-S is a high optical power laser diode source
operating at 20 Watt in CW mode. This linear bar array is ideal
for applications which request high output power like pumping
solid state lasers , illuminators , beacons ,...
The TH-C1420-S structure is multiple emitters spaced on a
monolithic 1cm "bar". The bar is mounted with the active zone (
P-side ) towards a high conductivity submount to minimize the thermal resistance.
The quality of the epitaxial quantum well structure and of the process leads to high electrical
to optical conversion efficiency and reliability.
The compact and rugged package allows easy connection to an efficient heat exchanger. So
the submount temperature can be adjusted to tune the emission wavelength. With this open
package the optical beam can be directly used to achieve efficient coupling.
MAIN FEATURES
20 W CW optical power●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
Quantum well design●
Very high conversion efficiency●
SPECIFICATIONS
Case temperature: 25°C
Thomson LaserDiodes - Produit : th-c1420-s
PARAMETERS TH-C1420-S UNITS
CW output power 20 Watt
Emitting area 10 x 0.001 mm x mm
Threshold current 7 Amp.
Operating current 27 Amp.
Operating voltage 1.85 Volt
Total efficiency 42 %
Beam divergence (FWHM) 10 x 35 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/oC●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 3nm●
Spectral width is <= 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1420-S UNITS
CW output power 24 Watt
Reverse voltage 3 Volt
Operating temperature +5 to +35 °C
Storage temperature -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
Demande d'information Retour liste Version Pdf
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Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-c1420-s
Demande d'information
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informations.
(Vous pouvez fermer cette fenêtre pour annuler votre demande)
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TH-C1420-S
20W CW LINEAR BAR ARRAY
DESCRIPTION
The TH-C1420-S is a high optical power laser
diode source operating at 20 Watt in CW mode.
This linear bar array is ideal for applications
which request high output power like pumping
solid state lasers , illuminators , beacons ,...
The TH-C1420-S structure is multiple emitters
spaced on a monolithic 1cm "bar". The bar is
mounted with the active zone ( P-side ) towards
a high conductivity submount to minimize the
thermal resistance.
The quality of the epitaxial quantum well
structure and of the process leads to high
electrical to optical conversion efficiency and
reliability.
The compact and rugged package allows easy
connection to an efficient heat exchanger. So
the submount temperature can be adjusted to
tune the emission wavelength. With this open
package the optical beam can be directly used
to achieve efficient coupling.
MAIN FEATURES
• 20 W CW optical power
• Monolithic linear array
• 795 to 860nm wavelength range
• Highly reproducible MOCVD process
• Quantum well design
• Very high conversion efficiency
TH-C1420-S
SPECIFICATIONS
Case temperature: 25°C
PARAMETERS TH-C1420-S UNITS
CW output power 20 Watt
Emitting area 10 x 0.001 mm x mm
Threshold current 7 Amp.
Operating current 27 Amp.
Operating voltage 1.85 Volt
Total efficiency 42 %
Beam divergence (FWHM) 10 x 35 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 3nm
- Spectral width is < 3nm FWHM
- Other wavelength selections are available in the range of 795nm to 860nm
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-C1420-S UNITS
CW output power 24 Watt
Reverse voltage 3 Volt
Operating temperature +5 to +35 °C
Storage temperature -40 to +85 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the consequences of use of such inf orm ation nor for any infringem ent of patents or other r ights of thir d
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Demande d'informations
Version PDF
Retour liste
TH-C1725-S / TH-C1730-S
CONDUCTIVELY COOLED 25W / 30W CW
LINEAR BAR ARRAY
DESCRIPTION
The TH-C17XX-S products are highly performing 25W CW and
30W CW Laser Diode Bar Arrays. The Laser Diode structure is
multiple emitters spaced on a monolithic 1cm "bar".The bar is
mounted with the active zone (P side) towards a conductively
cooled submount.
The quality of the improved epitaxial quantum well structure and
of the process leads to a strong increase in electrical to optical
conversion efficiency and reliability.
The conductively cooled package has a specific design for efficient thermal management. This
product is an unique solution to implement powerfull solid state laser pumping, illuminators....
MAIN FEATURES
25 W and 30W CW optical power●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
Very high conversion efficiency●
SPECIFICATIONS
Case temperature: 25°C
PARAMETERS TH-C1725-S TH-C1730-S UNITS
CW output power 25 30 Watt
Emitting area 10 x 0.001 10 x 0.001 mm x mm
Threshold current 9 9 Amp.
Thomson LaserDiodes - Produit : th-c17xx-s
Operating current 34 39 Amp.
Operating voltage 1.9 1.95 Volt
Total efficiency 39 to 45 41 to 47 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Note: Variation of wavelength is approximately 0.28 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is <= 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-S TH-C1730-S UNITS
CW output power 27 32 Watt
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-c17xx-s
Demande d'information
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TH-C1725-S / TH-C1730-S
CONDUCTIVELY COOLED 25W / 30W CW LINEAR BAR
ARRAY
DESCRIPTION
The TH-C17XX-P products are highly
performing 25W CW and 30W CW Laser Diode
Bar Arrays. The Laser Diode structure is
multiple emitters spaced on a monolithic 1cm
"bar".The bar is mounted with the active zone
(P side ) towards an conductively cooled
submount.
The quality of the improved epitaxial
quantum well structure and of the process
leads to a strong increase in electrical to optical
conversion efficiency and reliability.
The conductively cooled package has a
specific design for efficient thermal
management. This product is an unique
solution to implement powerfull solid state laser
pumping, illuminators....
MAIN FEATURES
• 25 W and 30W CW optical power
• Monolithic linear array
• 795 to 860nm wavelength range
• Highly reproducible MOCVD process
• Very high conversion efficiency
TH-C1725-S / TH-C1730-S
SPECIFICATIONS
Case temperature: 25°C
PARAMETERS TH-C1725-S TH-C1730-S UNITS
CW output power 25 30 Watt
Emitting area 10 x 0.001 10 x 0.001 mm x mm
Threshold current 9 9 Amp.
Operating current 34 39 Amp.
Operating voltage 1.9 1.95 Volt
Total efficiency 39 to 45 41 to 47 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Note:
• Variation of wavelength is approximately 0.28 nm/°C
• Standard wavelength is 808nm
• Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
• Spectral width is < 3nm FWHM
• Other wavelength selections are available in the range of 795nm to 860nm
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-S TH-C1730-S UNITS
CW output power 27 32 Watt
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :
• Operation at temperature below dew point requests to use dry N2 environment
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Demande d'informations
Version PDF
Retour liste
TH-C5520-S / TH-C5530-S
TH-C5520-P / TH-C5530-P
940nm CW LINEAR BAR ARRAY
DESCRIPTION
The TH-C5520-S and TH-C5530-S products are a highly
performing 20W CW and 30W CW, 940nm Laser Diode Bar
Array assembled on a conductively cooled package. An actively
cooled package is also available ('P' type). The Laser Diode
structure is multiple emitters spaced on a monolithic 1cm
"bar".The bar is mounted with the active zone (P side) towards an
actively cooled submount.
The quality of the epitaxial quantum well structure and of the
process leads to high electrical to optical conversion efficiency
and reliability.
The compact and rugged package allows easy connection to an efficient heat exchanger. So
the submount temperature can be adjusted to tune the emission wavelength. With this open
package the optical beam can be directly used to achieve efficient coupling.
MAIN FEATURES
20W CW to 30 W CW optical power●
915 to 980nm wavelength range●
Highly reproducible MOCVD process●
Conductively cooled package●
High conversion efficiency●
Possibility of actively cooled package 'P' or 'R' type●
SPECIFICATIONS
Thomson LaserDiodes - Produit : th-c5530-s
Case temperature: 25°C
PARAMETERS TH-C5520-S TH-C5530-S UNITS
CW output power 20 30 Watt
Emitting area 10 x 0.001 10 x 0.001 mm x mm
Threshold current 8 8 Amp.
Operating current 30 42 Amp.
Operating voltage 1.5 1.6 Volt
Total efficiency 42 45 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Flow rate : 1 l/mn for 'P' package.
Note:
Variation of wavelength is approximately 0.26 to 0.3 nm/oC●
Standard wavelength is 940nm●
Tolerance on wavelength is +/- 5nm●
Spectral width is <= 5nm FWHM●
Other wavelength selections are available in the range of 915nm to 980nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C5520-S TH-C5530-S UNITS
CW output power 22 32 Watt
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 oC
Storage temperature -40 to +85 -40 to +85 oC
Note :Operation at temperature below dew point requests to use dry N2 environment●
COOLING for the 'P' package : Water
Flow : 1 l/mn●
Pressure : 0.5 bar●
Temperature : 25 oC●
Thomson LaserDiodes - Produit : th-c5530-s
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-c5530-s
Demande d'information
SVP, remplissez attentivement ce formulaire pour que nous vous communiquions vos
informations.
(Vous pouvez fermer cette fenêtre pour annuler votre demande)
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TH-C5520-S / TH-C5530-S
TH-C5520-P / TH-C5530-P
940nm CW LINEAR BAR ARRAY
DESCRIPTION
The TH-C5520-S and TH-C5530-S
products are a highly performing 20W CW and
30W CW, 940nm Laser Diode Bar Array
assembled on a conductively cooled package.
An actively cooled package is also available (‘P’
type). The Laser Diode structure is multiple
emitters spaced on a monolithic 1cm "bar".The
bar is mounted with the active zone ( P side )
towards an actively cooled submount.
The quality of the epitaxial quantum well
structure and of the process leads to high
electrical to optical conversion efficiency and
reliability.
The compact and rugged package allows easy
connection to an efficient heat exchanger. So
the submount temperature can be adjusted to
tune the emission wavelength. With this open
package the optical beam can be directly used
to achieve efficient coupling.
MAIN FEATURES
• 20W CW to 30 W CW optical power
• 915 to 980nm wave length range
• Highly reproducible MOCVD process
• Conductively cooled package
• High conversion efficiency
• Possibility of actively cooled pa ckage ‘P’ or ‘R’ type
TH-C5520-S / TH-C5530-S TH-C5520-P / TH-C5530-P
SPECIFICATIONS
Fluid temperature: 25°C
PARAMETERS TH-C5520-S
TH-C5520-P TH-C5530-S
TH-C5530-P UNITS
CW output power 20 30 Watt
Emitting area 10 x 0.001 10 x 0.001 mm x mm
Threshold current 8 8 Amp.
Operating current 30 42 Amp.
Operating voltage 1.5 1.6 Volt
Total efficiency 42 45 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Flow rate : 1 l/mn for ‘P’ package
Note:
• Variation of wavelength is approximately 0.26 to 0.3 nm/°C
• Standard wavelength is 940nm
• Tolerance on wavelength is +/- 5nm
• Spectral width is < 5nm FWHM
• Other wavelength selections are available in the range of 915nm to 980nm
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-C5520-S TH-C5530-S UNITS
CW output power 22 32 Watt
Reverse voltage 3 3 Volt
Operating
temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :
• Operation at temperature below dew point requests to use dry N2 environment
TH-C5520-S / TH-C5530-S TH-C5520-P / TH-C5530-P
COOLING (for the ‘P’ Package) : Water
• Flow : 1 l/mn
• Pressure : 0.5 bar
• Temperature : 25 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the consequences of use of such inf orm ation nor for any infringem ent of patents or other r ights of thir d
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Demande d'information
SVP, remplissez attentivement ce formulaire pour que nous vous communiquions vos
informations.
(Vous pouvez fermer cette fenêtre pour annuler votre demande)
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20w_to_30w_CW_Linear_bar_array_on_conductively_cooled_package
Australia
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Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Demande d'informations
Version PDF
Retour liste
TH-C1420-R(n)
ACTIVELY COOLED 20W CW LINEAR BAR
ARRAY
DESCRIPTION
Series association
TH-C1420-R5 (5 elements)
The TH-C1420-R(n) product is based upon a highly performing
20W CW Laser Diode Bar Array. The Laser Diode structure is
multiple emitters spaced on a monolithic 1cm "bar".The bar is
mounted with the active zone (P-side ) towards an actively
cooled submount.
The quality of the epitaxial quantum well structure and of the
process leads to high electrical to optical conversion efficiency
and reliability.
The actively cooled package has a unique design (*) for easy
association in series from n=2 to 7 TH-C1420-R elements. So, up
to 140W CW are emitted over a line of 9 cm This compact association is an ideal solution to
implement powerful solid state laser pumping, illuminators...
(*) CEA- COGEMA Patent
MAIN FEATURES
20 W CW optical power per element●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
Actively cooled package●
Specific assembly design for high packing density●
SPECIFICATIONS
Fluid temperature: 25°C
Thomson LaserDiodes - Produit : th-c1420-r
Flow rate : 1 l/mn.
PARAMETERS TH-C1420-R(n) UNITS
CW output power 20 x n Watt
Emitting area 12 n x 0.001 mm x mm
Threshold current 7 Amp.
Operating current 27 Amp.
Operating voltage 1.85 x n Volt
Total efficiency 42 %
Beam divergence (FWHM) 10 x 35 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 3nm
- Spectral width is < 3nm FWHM
- Other wavelength selections are available in the range of 795nm to 860nm
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1420-R UNITS
CW output power 24 Watt
Reverse voltage 3 Volt
Operating temperature +5 to +35 °C
Storage temperature -40 to +85 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
COOLING : Water
Flow : 0.5 - 1 l/mn●
Pressure : 1 - 4 bar●
Temperature : 25 °C●
Demande d'information Retour liste Version Pdf
Thomson LaserDiodes - Produit : th-c1420-r
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-c1420-r
Demande d'information
SVP, remplissez attentivement ce formulaire pour que nous vous communiquions vos
informations.
(Vous pouvez fermer cette fenêtre pour annuler votre demande)
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Australia
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TLD : Demande d'information
TH-C1420-R
(
n
)
ACTIVELY COOLED 20W CW LINEAR BAR ARRAY
DESCRIPTION
The TH-C1420-R(n) product is based
upon a highly performing 20W CW Laser Diode
Bar Array. The Laser Diode structure is
multiple emitters spaced on a monolithic 1cm
"bar".The bar is mounted with the active zone
(P-side ) towards an actively cooled submount.
The quality of the epitaxial quantum well
structure and of the process leads to high
electrical to optical conversion efficiency and
reliability.
The actively cooled package has a
unique design
(*)
for easy association in series
from n=2 to 7 TH-C1420-R elements. So, up to
140W CW are emitted over a line of 9cm This
compact association is an ideal solution to
implement powerfull solid state laser pumping,
illuminators....
Series association
TH-C1420-R
5
(5 elements)
MAIN FEATURES
• 20 W CW optical power per element
• Monolithic linear array
• 795 to 860nm wavelength range
• Highly reproducible MOCVD process
• Actively cooled package
• Specific assembly design for high packing density
(*) CEA- COGEM A Patent
TH-C1420-R(n)
SPECIFICATIONS
Fluid temperature: 25°C Flow rate : 1 l/mn.
PARAMETERS TH-C1420-R(n) UNITS
CW output power 20 x n Watt
Emitting area 12 n x 0.001 mm x mm
Threshold current 7 Amp.
Operating current 27 Amp.
Operating voltage 1.85 x n Volt
Total efficiency 42 %
Beam divergence (FWHM) 10 x 35 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 3nm
- Spectral width is < 3nm FWHM
- Other wavelength selections are available in the range of 795nm to 860nm
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-C1420-R UNITS
CW output power 24 Watt
Reverse voltage 3 Volt
Operating temperature +5 to +35 °C
Storage temperature -40 to +85 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
TH-C1420-R
(
n
)
COOLING : Water
• Flow : 0.5 - 1 l/mn
• Pressure : 1 - 4 bar
• Temperature : 25 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the consequences of use of such inf orm ation nor for any infringem ent of patents or other r ights of thir d
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Demande d'informations
Version PDF
Retour liste
TH-C1420-P / TH-C1417-PO
ACTIVELY COOLED 20W CW LINEAR BAR
ARRAY(17W CW COLLIMATED)
DESCRIPTION
TH-C1417-PO (collimated)
The TH-C1420-P product is a highly performing 20W CW Laser
Diode Bar Array assembled on a water cooled package. The
Laser Diode structure is multiple emitters spaced on a monolithic
1cm "bar".The bar is mounted with the active zone (P side)
towards an actively cooled submount.
The quality of the epitaxial quantum well structure and of the
process leads to high electrical to optical conversion efficiency
and reliability.
The actively cooled package has a specific design for efficient
thermal management. Fast axis collimation is also proposed,
TH-C1417-PO, with the adjonction of a compact optics. This
product is an unique solution for flexible integrations to
implement powerful solid state laser pumping, illuminators...
MAIN FEATURES
20 W CW optical power●
A collimated beam version●
Actively cooled package●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
SPECIFICATIONS
Thomson LaserDiodes - Produit : th-c1420-p
Fluid temperature: 25°C
Flow rate : 1 l/mn.
PARAMETERS TH-C1420-P TH-C1417-PO
collimated UNITS
CW output power 20 17 Watt
Emitting area 10 x 0.001 10 x 0.7 mm x mm
Threshold current 7 7 Amp.
Operating current 27 29 Amp.
Operating voltage 1.85 1.85 Volt
Total efficiency 42 33 %
Beam divergence (FWHM) 10 x 35 10 x 2 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 3nm●
Spectral width is < 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1420-P TH-C1417-PO UNITS
CW output power 24 20 Watt
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
COOLING : Water
Flow : 1 l/mn●
Pressure : 0.5 bar●
Temperature : 25 °C●
Demande d'information Retour liste Version Pdf
Thomson LaserDiodes - Produit : th-c1420-p
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-c1420-p
Demande d'information
SVP, remplissez attentivement ce formulaire pour que nous vous communiquions vos
informations.
(Vous pouvez fermer cette fenêtre pour annuler votre demande)
Produit
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TH-C1420-P / TH-C1417-PO
ACTIVELY COOLED 20W CW LINEAR BAR ARRAY
(17W CW COLLIMATED)
DESCRIPTION
The TH-C1420-P product is a highly
performing 20W CW Laser Diode Bar Array
assembled on a water cooled package.
The Laser Diode structure is multiple
emitters spaced on a monolithic 1cm "bar".The
bar is mounted with the active zone ( P side )
towards an actively cooled submount.
The quality of the epitaxial quantum well
structure and of the process leads to high
electrical to optical conversion efficiency and
reliability.
The actively cooled package has a
specific design for efficient thermal
management. Fast axis collimation is also
proposed, TH-C1417-PO, with the adjonction of
a compact optics. This product is an unique
solution for flexible integrations to implement
powerful solid state laser pumping,
illuminators....
TH-C1417-PO (collimated)
MAIN FEATURES
• 20 W CW optical power
• A collimated beam version
• Actively cooled package
• Monolithic linear array
• 795 to 860nm wavelength range
• Highly reproducible MOCVD process
TH-C1420-P / TH-C1417-PO
SPECIFICATIONS
Fluid temperature: 25°C Flow rate : 1 l/mn.
PARAMETERS TH-C1420-P TH-C1417-PO
collimated UNITS
CW output power 20 17 Watt
Emitting area 10 x 0.001 10 x 0.7 mm x mm
Threshold current 7 7 Amp.
Operating current 27 29 Amp.
Operating voltage 1.85 1.85 Volt
Total efficiency 42 33 %
Beam divergence (FWHM) 10 x 35 10 x 2 degree
Note:
• Variation of wavelength is approximately 0.26 to 0.3 nm/°C
• Standard wavelength is 808nm
• Tolerance on wavelength is +/- 3nm
• Spectral width is < 3nm FWHM
• Other wavelength selections are available in the range of 795nm to 860nm
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-C1420-P TH-C1417-PO UNITS
CW output power 24 20 Watt
Reverse voltage 3 3 Volt
Operating
temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :
• Operation at temperature below dew point requests to use dry N2 environment
TH-C1420-P / TH-C1417-PO
COOLING : Water
• Flow : 1 l/mn
• Pressure : 0.5 bar
• Temperature : 25 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the consequences of use of such inf orm ation nor for any infringem ent of patents or other r ights of thir d
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Demande d'informations
Version PDF
Retour liste
TH-C1725-R(n) / TH-C1730-R(n)
ACTIVELY COOLED 25W / 30W CW LINEAR
BAR ARRAYS
DESCRIPTION
Series association
TH-C1730-R5
(5 elements)
The TH-C17XX-R(n) products are based upon highly performing
25W CW and 30W CW Laser Diode Bar Arrays. The Laser
Diode structure is multiple emitters spaced on a monolithic 1cm
"bar".The bar is mounted with the active zone (P-side ) towards
an actively cooled submount.
The quality of the improved epitaxial quantum well structure and
of the process leads to a strong increase in electrical to optical
conversion efficiency and reliability.
The actively cooled package has a unique design (*) for easy
association in series from n=2 to 7 TH-C17xx-R elements. So, up
to 175W CW (for TH-C1725-R7 association) or 210W CW (for
TH-C1730-R7 association) are emitted over a line of 9cm This compact association is an ideal
solution to implement powerfull solid state laser pumping, illuminators...
(*) CEA- COGEMA Patent
MAIN FEATURES
25 W CW and 30W CW optical power per element●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
Actively cooled package●
Specific assembly design for high packing density●
SPECIFICATIONS
Fluid temperature: 25°C
Flow rate : 1 l/mn.
Thomson LaserDiodes - Produit : th-c17xx-r
PARAMETERS TH-C1725-R(n) TH-C1730-R(n) UNITS
CW output power 25 x n 30 x n Watt
Emitting area 12n x 0.001 12n x 0.001 mm x mm
Threshold current 9 9 Amp.
Operating current 34 39 Amp.
Operating voltage 1.9 x n 1.95 x n Volt
Total efficiency 39 to 45 41 to 47 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Note: Variation of wavelength is approximately 0.28 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is < 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-R(n) TH-C1730-R(n) UNITS
CW output power 27 32 Watt
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
COOLING : Water
Flow : 1 l/mn●
Pressure : 1 - 4 bar●
Temperature : 25 °C●
Demande d'information Retour liste Version Pdf
Thomson LaserDiodes - Produit : th-c17xx-r
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-c17xx-r
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TH-C1725-R
(
n
)
/ TH-C1730-R
(
n
)
ACTIVELY COOLED 25W / 30W CW LINEAR BAR ARRAYS
DESCRIPTION
The TH-C17XX-R(n) products are based
upon highly performing 25W CW and 30W CW
Laser Diode Bar Arrays. The Laser Diode
structure is multiple emitters spaced on a
monolithic 1cm "bar".The bar is mounted with
the active zone (P-side) towards an actively
cooled submount.
The quality of the improved epitaxial
quantum well structure and of the process
leads to a strong increase in electrical to optical
conversion efficiency and reliability.
The actively cooled package has a
unique design
(*)
for easy association in series
from n=2 to 7 TH-C17xx-R elements. So, up to
175W CW (for TH-C1725-R7 association) or
210W CW (for TH-C1730-R7 association) are
emitted over a line of 9cm This compact
association is an ideal solution to implement
powerfull solid state laser pumping,
illuminators....
Series association
TH-C1730-R
5
(5 elements)
MAIN FEATURES
• 25 W CW and 30W CW optical power per element
• Monolithic linear array
• 795 to 860nm wavelength range
• Highly reproducible MOCVD process
• Actively cooled package
• Specific assembly design for high packing density
(*) CEA- COGEM A Patent
TH-C1725-R(n) / TH-C1730-R(n)
SPECIFICATIONS
Fluid temperature: 25°C Flow rate : 1 l/mn.
PARAMETERS TH-C1725-R(n) TH-C1730-R(n) UNITS
CW output power 25 x n 30 x n Watt
Emitting area 12n x 0.001 12n x 0.001 mm x mm
Threshold current 9 9 Amp.
Operating current 34 39 Amp.
Operating voltage 1.9 x n 1.95 x n Volt
Total efficiency 39 to 45 41 to 47 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Note:
• Variation of wavelength is approximately 0.28 nm/°C
• Standard wavelength is 808nm
• Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
• Spectral width is < 3nm FWHM
• Other wavelength selections are available in the range of 795nm to 860nm
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-R(n) TH-C1730-R(n) UNITS
CW output power 27 32 Watt
Reverse voltage 3 3 Volt
Operating
temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :
• Operation at temperature below dew point requests to use dry N2 environment
TH-C1725-R
(
n
)
/ TH-C1730-R
(
n
)
COOLING : Water
• Flow : 1 l/mn
• Pressure : 1 - 4 bar
• Temperature : 20 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the consequences of use of such inf orm ation nor for any infringem ent of patents or other r ights of thir d
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Demande d'informations
Version PDF
Retour liste
TH-C1725-P / TH-C1730-P
ACTIVELY COOLED 25W / 30W CW LINEAR
BAR ARRAY
DESCRIPTION
The TH-C17XX-P products are highly performing 25W CW and
30W CW Laser Diode Bar Arrays. The Laser Diode structure is
multiple emitters spaced on a monolithic 1cm "bar".The bar is
mounted with the active zone (P side ) towards an actively cooled
submount.
The quality of the improved epitaxial quantum well structure and
of the process leads to a strong increase in electrical to optical
conversion efficiency and reliability.
The actively cooled package has a specific design for efficient
thermal management. This product is an unique solution to
implement powerfull solid state laser pumping, illuminators....
MAIN FEATURES
25 W and 30W CW optical power●
Actively cooled package●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
SPECIFICATIONS
Fluid temperature: 25°C
Flow rate : 1 l/mn.
PARAMETERS TH-C1725-P TH-C1730-P UNITS
CW output power 25 30 Watt
Thomson LaserDiodes - Produit : th-c17xx-p
Emitting area 10 x 0.001 10 x 0.001 mm x mm
Threshold current 9 9 Amp.
Operating current 34 39 Amp.
Operating voltage 1.9 1.95 Volt
Total efficiency 39 to 45 41 to 47 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Note: Variation of wavelength is approximately 0.28 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is <= 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-P TH-C1730-P UNITS
CW output power 27 32 Watt
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
COOLING : Water
Flow : 1 l/mn●
Pressure : 0.5 bar●
Temperature : 25 °C●
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Thomson LaserDiodes - Produit : th-c17xx-p
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-c17xx-p
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TH-C1725-P / TH-C1730-P
ACTIVELY COOLED 25W / 30W CW LINEAR BAR ARRAY
DESCRIPTION
The TH-C17XX-P products are highly
performing 25W CW and 30W CW Laser Diode
Bar Arrays. The Laser Diode structure is
multiple emitters spaced on a monolithic 1cm
"bar".The bar is mounted with the active zone
(P side ) towards an actively cooled submount.
The quality of the improved epitaxial
quantum well structure and of the process
leads to a strong increase in electrical to optical
conversion efficiency and reliability.
The actively cooled package has a
specific design for efficient thermal
management. This product is an unique
solution to implement powerfull solid state laser
pumping, illuminators....
MAIN FEATURES
• 25 W and 30W CW optical power
• Actively cooled package
• Monolithic linear array
• 795 to 860nm wavelength range
• Highly reproducible MOCVD process
TH-C1725-P / TH-C1730-P
SPECIFICATIONS
Fluid temperature: 25°C Flow rate : 1 l/mn.
PARAMETERS TH-C1725-P TH-C1730-P UNITS
CW output power 25 30 Watt
Emitting area 10 x 0.001 10 x 0.001 mm x mm
Threshold current 9 9 Amp.
Operating current 34 39 Amp.
Operating voltage 1.9 1.95 Volt
Total efficiency 39 to 45 41 to 47 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Note:
• Variation of wavelength is approximately 0.28 nm/°C
• Standard wavelength is 808nm
• Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
• Spectral width is < 3nm FWHM
• Other wavelength selections are available in the range of 795nm to 860nm
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-P TH-C1730-P UNITS
CW output power 27 32 Watt
Reverse voltage 3 3 Volt
Operating
temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :
• Operation at temperature below dew point requests to use dry N2 environment
TH-C1725-P / TH-C1730-P
COOLING : Water
• Flow : 1 l/mn
• Pressure : 0.5 bar
• Temperature : 20 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the consequences of use of such inf orm ation nor for any infringem ent of patents or other r ights of thir d
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Demande d'information
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Australia
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TH-C1725-PO
25W CW COLLIMATED LINEAR BAR ARRAY
DESCRIPTION
The TH-C1725-PO product is a highly performing 25W CW
Laser Diode Bar Array assembled on a water cooled package.
The Laser Diode structure is multiple emitters spaced on a
monolithic 1cm "bar".The bar is mounted with the active zone (P
side) towards an actively cooled submount.
The quality of the epitaxial quantum well structure and of the
process leads to high electrical to optical conversion efficiency
and reliability.
The actively cooled package has a specific design for efficient
thermal management. Fast axis collimation is achieved with the
adjonction of a compact optics. This product is an unique
solution for flexible integrations to implement powerful solid state laser pumping,
illuminators...
MAIN FEATURES
25 W CW collimated optical power●
Actively cooled package●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
SPECIFICATIONS
Fluid temperature: 25°C
Thomson LaserDiodes - Produit : th-c1725-po
Flow rate : 1 l/mn.
PARAMETERS TH-C1725-PO UNITS
CW output power 25 Watt
Emitting area 10 x 0.7 mm x mm
Threshold current 9 Amp.
Operating current 40 Amp.
Operating voltage 1.95 Volt
Total efficiency 33 %
Beam divergence (FWHM) 10 x 2 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 3nm●
Spectral width is < 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-PO UNITS
CW output power 27 Watt
Reverse voltage 3 Volt
Operating temperature +5 to +35 °C
Storage temperature -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
COOLING : Water
Flow : 1 l/mn●
Pressure : 0.5 bar●
Temperature : 25 °C●
Demande d'information Retour liste Version Pdf
Contactez nous
Thomson LaserDiodes - Produit : th-c1725-po
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-c1725-po
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informations.
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TH-C1725-PO
25W CW COLLIMATED LINEAR BAR ARRAY
DESCRIPTION
The TH-C1725-PO product is a highly
performing 25W CW Collimated Laser Diode
Bar Array assembled on a water cooled
package. The Laser Diode structure is
multiple emitters spaced on a monolithic 1cm
"bar".The bar is mounted with the active zone
(P side ) towards an actively cooled submount.
The quality of the epitaxial quantum well
structure and of the process leads to high
electrical to optical conversion efficiency and
reliability.
The actively cooled package has a
specific design for efficient thermal
management. Fast axis collimation is achieved
with the adjonction of a compact optics. This
product is an unique solution for flexible
integrations to implement powerful solid state
laser pumping, illuminators....
MAIN FEATURES
• 25 W CW collim ated optical power
• A collimated beam version
• Actively cooled package
• Monolithic linear array
• 795 to 860nm wavelength range
• Highly reproducible MOCVD process
TH-C1725-PO
SPECIFICATIONS
Fluid temperature: 25°C Flow rate : 1 l/mn.
PARAMETERS TH-C1725-PO UNITS
CW output power 25 Watt
Emitting area 10 x 0.7 mm x mm
Threshold current 9 Amp.
Operating current 40 Amp.
Operating voltage 1.95 Volt
Total efficiency 33 %
Beam divergence (FWHM) 10 x 2 degree
Note:
• Variation of wavelength is approximately 0.26 to 0.3 nm/°C
• Standard wavelength is 808nm
• Tolerance on wavelength is +/- 3nm
• Spectral width is < 3nm FWHM
• Other wavelength selections are available in the range of 795nm to 860nm
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-PO UNITS
CW output power 27 Watt
Reverse voltage 3 Volt
Operating temperature +5 to +35 °C
Storage temperature -40 to +70 °C
Note :
• Operation at temperature below dew point requests to use dry N2 environment
TH-C1725-PO
COOLING : Water
• Flow : 1 l/mn
• Pressure : 0.5 bar
• Temperature : 25 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Demande d'information
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TH-C1310- F /TH-C1315-F
HIGH POWER FIBER COUPLED LASER
DIODES
DESCRIPTION
The TH-C13xx-F series are high optical power fiber coupled laser
diode sources . CW power delivery from 10W to 15W are ideal
for applications which request high brightness sources like for
efficient pumping solid state lasers, illuminators, beacons,...
The optical power is delivered through a fiber bundle terminated
in a SMA connector. The diode bar is actively cooled to control
the emission wavelength.
The diode bar structure use quantum well technology which gives high efficiency and
reliability.
MAIN FEATURES
10W CW and 15W CW optical power●
Optical delivery through SMA connector●
Optical fiber 1m long, 0.2 N.A.●
798 to 820nm wavelength range●
Highly reproducible MOCVD process●
SPECIFICATIONS
Fluid temperature: 20°C
Flow rate: 1 l/mn.
PARAMETERS TH-C1310-F TH-C1315-F UNITS
CW output power 10 15 Watt
Fiber diameter F 900 900 µm
Thomson LaserDiodes - Produit : th-c13xx-f
Numerical Aperture 0.2 0.2
Operating current < 30 < 35 Amp.
Operating voltage 2 2.1 Volt
Total efficiency 24 26 %
Note:
- Variation of wavelength is approximately 0.28 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
- Spectral width is < 3nm for TH-C1310-F and < 4nm FWHM for TH-C1315-F
- Other wavelength selections are available in the range of 798nm to 820nm
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1310-F TH-C1315-F UNITS
CW output power 11 16 Watt
Reverse voltage 3 3 Volt
Case Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -30 to +80 -30 to +80 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
COOLING : Water
Flow : 0.5 - 1 l/mn●
Pressure : 0.5 bar typical●
Temperature : 20 °C●
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-c13xx-f
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TH-C1310- F /TH-C1315-F
HIGH POWER FIBER COUPLED LASER DIODES
DESCRIPTION
The TH-C13xx-F series are high optical
power fiber coupled laser diode sources . CW
power delivery from 10W to 15W are ideal for
applications which request high brightness
sources like for efficient pumping solid state
lasers , illuminators , beacons ,...
The optical power is delivered through a
fiber bundle terminated in a SMA connector.
The diode bar is actively cooled to control the
emission wavelength.
The diode bar structure use quantum well
technology which gives high efficiency and
reliability.
MAIN FEATURES
• 10W CW and 15W CW optical power
• Optical delivery through SMA connector
• Optical fiber 1m long, 0.2 N.A.
• 795 to 860nm wavelength range
• Highly reproducible MOCVD process
TH-C1310- F / TH-C1315-F
SPECIFICATIONS
Fluid temperature: 20°C Flow rate: 1 l/mn.
PARAMETERS TH-C1310-F TH-C1315-F UNITS
CW output power 10 15 Watt
Fiber diameter Φ900 900 µm
Numerical Aperture 0.2 0.2
Operating current < 30 < 35 Amp.
Operating voltage 2 2.1 Volt
Total efficiency 24 26 %
Note:
- Variation of wavelength is approximately 0.28 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
- Spectral width is < 3nm for TH-C1310-F and < 4nm FWHM for TH-C1315-F
- Other wavelength selections are available in the range of 795nm to 860nm
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-C1310-F TH-C1315-F UNITS
CW output power 11 16 Watt
Reverse voltage 3 3 Volt
Case Operating
temperature +5 to +35 +5 to +35 °C
Storage temperature -30 to +80 -30 to +80 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
TH-C1310-F / TH-C1315-F
COOLING : Water
• Flow : 0.5 - 1 l/mn
• Pressure : 0.5 bar typical
• Temperature : 20 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
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TH-Q1201-A / TH-Q1301-A / TH-Q1401-A
60W / 80W / 100W QUASI-CW LINEAR BAR
ARRAYS
DESCRIPTION
The TH-Q1X01-A products are a high optical power laser diode
sources for quasi-CW operation. The 'X' index stands for the type
of diode bar: X=2, 3, 4 respectively for 60W, 80W, 100W QCW
peak optical power.
These products are based upon MOCVD quantum well design to
realize highly efficient 1cm linear bar arrays.The quality of the
process of these GaAlAs laser diodes leads to longer lifetime and
improved reliability.
Assembly in a compact and rugged package allows easy connection to a heat exchanger to get
good temperature control.
MAIN FEATURES
60W / 80W / 100W peak optical power●
Standard QCW operation (200µs/100Hz)●
12mJ / 16mJ / 20 mJ energy per pulse●
795 to 860nm wavelength range●
High conversion efficiency●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Case temperature: 25° C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
PARAMETERS TH-Q1201-A TH-Q1301-A TH-Q1401-A UNITS
QCW output power 60 80 100 Watt
Thomson LaserDiodes - Produit : th-q1x01-a
Energy per pulse 12 16 20 mJ
Emitting area 10 x 0.001 10 x 0.001 10 x 0.001 mm x mm
Threshold current 17 20 22 Amp.
Operating current 76 100 120 Amp.
Operating voltage 1.9 2 2.1 Volt
Total efficiency 40 to 46 40 to 46 40 to 46 %
Beam divergence (FWHM) 10 x 40 10 x 40 10 x 40 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is < 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
TH-Q1201-A can operate at higher duty cycle, up to 1kHz for 60W QCW.●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1201-A TH-Q1301-A TH-Q1401-A UNITS
QCW output power 65 85 105 Watt
Reverse voltage 3 3 3 Volt
Operating temperature +5 to +50 +5 to +50 +5 to +50 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 °C
Note: Operation at temperature below dew point requests to use dry N2 environment●
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-q1x01-a
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TH-Q1201-A / TH-Q1301-A / TH-Q1401-A
60W / 80W / 100W QUASI-CW LINEAR BAR ARRAYS
DESCRIPTION
The TH-Q1X01-A products are a high optical
power laser diode sources for quasi-CW
operation. The ‘X’ index stands for the type of
diode bar: X=2, 3, 4 respectively for 60W, 80W,
100W QCW peak optical power.
These products are based upon MOCVD
quantum well design to realize highly efficient
1cm linear bar arrays.The quality of the process
of these GaAlAs laser diodes leads to longer
lifetime and improved reliability.
Assembly in a compact and rugged package
allows easy connection to a heat exchanger to
get good temperature control.
MAIN FEATURES
• 60W / 80W / 100W peak optical power
• Standard QCW operation (200µs/100Hz)
•12mJ / 16mJ / 20 mJ energy per pulse
• 795 to 860nm wavelength range
• High conversion efficiency
• Highly reproducible MOCVD process
• GaAlAs quantum well design
TH-Q1X01-A / TH-Q1301-A / TH-Q1401-A
SPECIFICATIONS
Case temperature: 25° C
Quasi-continuous mode: pulse width = 200µs
repetition = 100Hz
PARAMETERS TH-Q1201-A TH-Q1231-A TH-Q1401-A UNITS
QCW output power 60 80 100 Watt
Energy per pulse 12 16 20 mJ
Emitting area 10 x 0.001 10 x 0.001 10 x 0.001 mm x mm
Threshold current 17 20 22 Amp.
Operating current 76 100 120 Amp.
Operating voltage 1.9 2 2.1 Volt
Total efficiency 40 to 46 40 to 46 40 to 46 %
Beam divergence (FWHM) 10 x 40 10 x 40 10 x 40 degree
Note:
• Variation of wavelength is approximately 0.26 to 0.3 nm/°C
• Standard wavelength is 808nm
• Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
• Spectral width is < 3nm FWHM
• Other wavelength selections are available in the range of 795nm to 860nm
• TH-Q1201-A can operate at higher duty cycle, up to 1kHz for 60W QCW.
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1201-A TH-Q1301-A TH-Q1401-A UNITS
QCW output power 65 85 105 Watt
Reverse voltage 3 3 3 Volt
Operating temperature +5 to +50 +5 to +50 +5 to +50 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 °C
Note:
• Operation at temperature below dew point requests to use dry N2 environment
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
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TH-Q1206-A / TH-Q1306-A / TH-Q1406-A
360W / 480W / 600W QUASI-CW STACKED
ARRAYS
DESCRIPTION
TH-Q1X06-A are high optical power laser diode sources.
These products are based upon 6 highly efficient 1cm linear bar
arrays which are piled up to form a stack operating in Quasi-CW
mode. 'X' value in TH-Q1X06-A stands for the type of diode bars
which are assembled. For X= 2, 3, 4 respectively, peak optical
power are 360W, 480W, 600W with power density from 1.8 to
3kW/cm2.
The quality of the process of these GaAlAs laser diodes leads to
longer lifetime and improved reliability. So the TH-Q1X06-A stacked arrays are ideal for
different applications : pumping solid state lasers, illuminators,...
Assembly in a compact and rugged package allows easy connection to a heat exchanger to get
good temperature control.
MAIN FEATURES
360W / 480W / 600W peak optical power●
Standard QCW operation (200µs/100Hz)●
72mJ / 96mJ / 120 mJ energy per pulse●
795 to 860nm wavelength range●
High conversion efficiency●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Case temperature: 25° C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
Thomson LaserDiodes - Produit : th-q1x06-a
PARAMETERS TH-Q1206-A TH-Q1306-A TH-Q1406-A UNITS
QCW output power 360 480 600 Watt
Energy per pulse 72 96 120 mJ
Emitting area 10 x 2 10 x 2 10 x 2 mm x mm
Threshold current 17 20 22 Amp.
Operating current 76 100 120 Amp.
Operating voltage 11.5 12 12.5 Volt
Total efficiency 40 to 46 40 to 46 40 to 46 %
Beam divergence (FWHM) 10 x 40 10 x 40 10 x 40 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is < 3nm FWHM ( < 4nm for TH-Q1406-A model)●
Other wavelength selections are available in the range of 795nm to 860nm●
Specifications are for nominal lifetime 109 pulses (for 200µs pulse width)●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1206-A TH-Q1306-A TH-Q1406-A UNITS
QCW output power 370 490 610 Watt
Reverse voltage 3 3 3 Volt
Operating temperature +5 to +50 +5 to +50 +5 to +50 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 °C
Note:Operation at temperature below dew point requests to use dry N2 environment●
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
Thomson LaserDiodes - Produit : th-q1x06-a
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-q1x06-a
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TH-Q1206-A / TH-Q1306-A / TH-Q1406-A
360W / 480W / 600W QUASI-CW STACKED ARRAYS
DESCRIPTION
TH-Q1X06-A are high optical power laser diode
sources.
These products are based upon 6 highly
efficient 1cm linear bar arrays which are piled
up to form a stack operating in Quasi-CW
mode. ‘X’ value in TH-Q1X06-A stands for the
type of diode bars which are assembled. For
X= 2, 3, 4 respectively, peak optical power are
360W, 480W, 600W with power density from
1.8 to 3kW/cm².
The quality of the process of these GaAlAs
laser diodes leads to longer lifetime and
improved reliability. So the TH-Q1X06-A
stacked arrays are ideal for different
applications : pumping solid state lasers ,
illuminators, ...
Assembly in a compact and rugged package
allows easy connection to a heat exchanger to
get good temperature control.
MAIN FEATURES
• 360W / 480W / 600W peak optical power
• Standard QCW operation (200µs/100Hz)
• 72mJ / 96mJ / 120 mJ energy per pulse
• 795 to 860nm wavelength range
• High conversion efficiency
• Highly reproducible MOCVD process
• GaAlAs quantum well design
TH-Q1206-A / TH-Q1306-A / TH-Q1406-A
SPECIFICATIONS
Case temperature: 25° C
Quasi-continuous mode: pulse width = 200µs
repetition = 100Hz
PARAMETERS TH-Q1206-A TH-Q1306-A TH-Q1406-A UNITS
QCW output power 360 480 600 Watt
Energy per pulse 72 96 120 mJ
Emitting area 10 x 2 10 x 2 10 x 2 mm x mm
Threshold current 17 20 22 Amp.
Operating current 76 100 120 Amp.
Operating voltage 11.5 12 12.5 Volt
Total efficiency 40 to 46 40 to 46 40 to 46 %
Beam divergence (FWHM) 10 x 40 10 x 40 10 x 40 degree
Note:
• Variation of wavelength is approximately 0.26 to 0.3 nm/°C
• Standard wavelength is 808nm
• Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
• Spectral width is < 3nm FWHM ( < 4nm for TH-Q1406-A model)
• Other wavelength selections are available in the range of 795nm to 860nm
• Specifications are for nominal lifetime 109 pulses (for 200µs pulse width)
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1206-A TH-Q1306-A TH-Q1406-A UNITS
QCW output power 370 490 610 Watt
Reverse voltage 3 3 3 Volt
Operating temperature +5 to +50 +5 to +50 +5 to +50 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 °C
Note:
• Operation at temperature below dew point requests to use dry N2 environment
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
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TH-Q1210-B / TH-Q1310-B / TH-Q1410-B
600W / 800W / 1000W QUASI-CW STACKED
ARRAYS
DESCRIPTION
TH-Q1X10-B are high optical power laser diode sources.
These Products are based upon 10 highly efficient 1cm linear bar
arrays which are piled up to form a stack operating in Quasi-CW
mode. 'X' value in TH-Q1X10-B stands for the type of diode bars
which are assembled. For X=2, 3, 4 respectively, peak optical
power are 600W, 800W, 1000W with power density from 1.7 to
2.8kW/cm2.
The quality of the process of these GaAlAs laser diodes leads to
longer lifetime and improved reliability. So the TH-Q1X10-B
stacked arrays are ideal for different applications : pumping solid state lasers, illuminators,...
Assembly in a compact and rugged package allows easy connection to a heat exchanger to get
good temperature control.
MAIN FEATURES
600W / 800W / 1000W peak optical power●
Standard QCW operation (200µs/100Hz)●
120mJ / 160mJ / 200 mJ energy per pulse●
795 to 860nm wavelength range●
High conversion efficiency●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Case temperature: 25° C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
Thomson LaserDiodes - Produit : th-q1x10-b
PARAMETERS TH-Q1210-B TH-Q1310-B TH-Q1410-B UNITS
QCW output power 600 800 1000 Watt
Energy per pulse 120 160 200 mJ
Emitting area 10 x 3.6 10 x 3.6 10 x 3.6 mm x mm
Threshold current 17 20 22 Amp.
Operating current 76 100 120 Amp.
Operating voltage 19 20 21 Volt
Total efficiency 40 to 46 40 to 46 40 to 46 %
Beam divergence (FWHM) 10 x 40 10 x 40 10 x 40 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is < 3nm FWHM ( < 4nm for TH-Q1410-B model)●
Other wavelength selections are available in the range of 795nm to 860nm●
Specifications are for nominal lifetime 109 pulses (for 200µs pulse width)●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1210-B TH-Q1310-B TH-Q1410-B UNITS
QCW output power 630 840 1050 Watt
Reverse voltage 3 3 3 Volt
Operating temperature +5 to +50 +5 to +50 +5 to +50 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 °C
Note:Operation at temperature below dew point requests to use dry N2 environment●
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Thomson LaserDiodes - Produit : th-q1x10-b
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-q1x10-b
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TH-Q1210-B / TH-Q1310-B / TH-Q1410-B
600W / 800W / 1000W QUASI-CW STACKED ARRAYS
DESCRIPTION
TH-Q1X10-B are high optical power laser diode
sources.
These Products are based upon 10 highly
efficient 1cm linear bar arrays which are piled
up to form a stack operating in Quasi-CW
mode. ‘X’ value in TH-Q1X10-B stands for the
type of diode bars which are assembled. For
X=2, 3, 4 respectively, peak optical power are
600W, 800W, 1000W with power density from
1.7 to 2.8kW/cm².
The quality of the process of these GaAlAs
laser diodes leads to longer lifetime and
improved reliability. So the TH-Q1X10-B
stacked arrays are ideal for different
applications : pumping solid state lasers ,
illuminators, ...
Assembly in a compact and rugged package
allows easy connection to a heat exchanger to
get good temperature control.
MAIN FEATURES
• 600W / 800W / 1000W peak optical power
• Standard QCW operation (200µs/100Hz)
•120mJ / 160mJ / 200 mJ energy per pulse
• 795 to 860nm wavelength range
• High conversion efficiency
• Highly reproducible MOCVD process
• GaAlAs quantum well design
TH-Q1210-B / TH-Q1310-B / TH-Q1410-B
SPECIFICATIONS
Case temperature: 25° C
Quasi-continuous mode: pulse width = 200µs
repetition = 100Hz
PARAMETERS TH-Q1210-B TH-Q1310-B TH-Q1410-B UNITS
QCW output power 600 800 1000 Watt
Energy per pulse 120 160 200 mJ
Emitting area 10 x 3.6 10 x 3.6 10 x 3.6 mm x mm
Threshold current 17 20 22 Amp.
Operating current 76 100 120 Amp.
Operating voltage 19 20 21 Volt
Total efficiency 40 to 46 40 to 46 40 to 46 %
Beam divergence (FWHM) 10 x 40 10 x 40 10 x 40 degree
Note:
• Variation of wavelength is approximately 0.26 to 0.3 nm/°C
• Standard wavelength is 808nm
• Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
• Spectral width is < 3nm FWHM ( < 4nm for TH-Q1410-B model)
• Other wavelength selections are available in the range of 795nm to 860nm
• Specifications are for nominal lifetime 109 pulses (for 200µs pulse width)
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1210-B TH-Q1310-B TH-Q1410-B UNITS
QCW output power 630 840 1050 Watt
Reverse voltage 3 3 3 Volt
Operating temperature +5 to +50 +5 to +50 +5 to +50 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 °C
Note:
• Operation at temperature below dew point requests to use dry N2 environment
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
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TH-Q12xx-C / TH-Q13xx-C
300W to 1.5kW QUASI-CW
STACKED ARRAYS
DESCRIPTION
The TH-Q12xx-C and TH-Q13xx-C series are high optical power
laser diodes stacks assembled on a liquid cooled heatsink.
These stacks are based upon highly efficient 1cm linear bar
arrays. According to the number of assembled bars "xx" , a large
range of optical power are available from 300W QCW to 2kW
QCW.
Low thermal impedance liquid cooled package allows easy
control of the central wavelength. So the TH-Q12xx-C and
TH-Q13xx-C stacks are ideal for different applications : pumping rod or slab solid state lasers,
illuminators...
Assembly in a compact and rugged package allows easy connection.
MAIN FEATURES
300W to 2000W peak optical power●
Standard QCW operation (200µs/100Hz)●
Up to 400 mJ energy per pulse●
795 to 860nm wavelength range●
Liquid cooled package●
High conversion efficiency●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Fluid temperature: 25°C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
Thomson LaserDiodes - Produit : th-q12xx-c
Products are designed with 5 to 25 linear bar arrays.
Characteristics presented in the following table are respectively for 10 bars( TH-Q1210-C or
TH-Q1310-C ) and for 25 bars( TH-Q1225-C or TH-Q1325-C ).
PARAMETERS TH-Q1210-C TH-Q1225-C TH-Q1310-C TH-Q1325-C UNITS
QCW output power 600 1500 800 2000 Watt
Energy per pulse 120 300 160 600 mJ
Emitting area 10 x 3.6 10 x 9.6 10 x 3.6 10 x 9.6 mm x mm
Threshold current 17 17 20 20 Amp.
Operating current 76 76 100 100 Amp.
Operating voltage 19 48 20 50 Volt
Total efficiency 40 to 46 440 to 46 40 to 46 40 to 46 %
Beam divergence 10 x 40 10 x 40 10 x 40 10 x 40 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
- Spectral width is < 4nm FWHM ( < 3nm on request )
- Other wavelength selections are available in the range of 795nm to 860nm
- Specifications are for nominal lifetime 109 pulses ( for 200µs pulse width )
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1210-C TH-Q1225-C TH-Q1310-C TH-Q1325-C UNITS
QCW output power 630 1570 840 2100 Watt
Pulse width 400 400 300 300 µs
Reverse voltage 3 3 3 3 Volt
Operating temperature +5 to +35 +5 to +35 +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 -40 to +85 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
COOLING : Water
Flow : 0.5 - 1 l/mn●
Pressure : 1 - 3 bar●
Temperature : 25 °C●
Thomson LaserDiodes - Produit : th-q12xx-c
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-q12xx-c
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TH-Q12xx-C / TH-Q13xx-C
300W to 1.5kW QUASI-CW STACKED ARRAYS
DESCRIPTION
The TH-Q12xx-C and TH-Q13xx-C series are
high optical power laser diodes stacks
assembled on a liquid cooled heatsink.
These stacks are based upon highly efficient
1cm linear bar arrays. According to the number
of assembled bars "xx" , a large range of optical
power are available from 300W QCW to 2kW
QCW .
Low thermal impedance liquid cooled package
allows easy control of the central wavelength.
So the TH-Q12xx-C and TH-Q13xx-C stacks
are ideal for different applications : pumping rod
or slab solid sta t e lasers , illuminators...
Assembly in a compact and rugged package
allows easy connection.
MAIN FEATURES
• 300W to 2000W peak optical power
• Standard QCW operation (200µs/100Hz)
•Up to 400 mJ energy per pulse
• 795 to 860nm wavelength range
• Liquid cooled package
• High conversion efficiency
• Highly reproducible MOCVD process
• GaAlAs quantum well design
TH-Q12xx-C / TH-Q13xx-C
SPECIFICATIONS
Fluid temperature: 25°C
Quasi-continuous mode: pulse width = 200µs
repetition = 100Hz
Products are designed with 5 to 25 linear bar arrays .
Characteristics presented in the following table are respective ly for 10 bars( TH-Q1210-C or TH-
Q1310-C ) and for 25 bars( TH-Q1225-C or TH-Q1325-C ).
PARAMETERS TH-Q1210-C TH-Q1225-C TH-Q1310-C TH-Q1325-C UNITS
QCW output power 600 1500 800 2000 Watt
Energy per pulse 120 300 160 600 mJ
Emitting area 10 x 3.6 10 x 9.6 10 x 3.6 10 x 9.6 mm x mm
Threshold current 17 17 20 20 Amp.
Operating current 76 76 100 100 Amp.
Operating voltage 19 48 20 50 Volt
Total efficiency 40 to 46 40 to 46 40 to 46 40 to 46 %
Beam divergence 10 x 40 10 x 40 10 x 40 10 x 40 degree
Note:
- Variation of wavelength is approximately 0.26 to 0;3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
- Spectral width is < 4nm FWHM ( < 3nm on request )
- Other wavelength selections are available in the range of 795nm to 860nm
- Specifications are for nominal lifetime 109 pulses ( for 200µs pulse width )
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1210-C TH-Q1225-C TH-Q1225-C TH-Q1225-C UNITS
QCW output power 630 1570 1050 2100 Watt
Pulse width 400 400 300 300 µs
Reverse voltage 3 3 3 3 Volt
Operating
temperature +5 to +35 +5 to +35 +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 -40 to +85 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
TH-Q12xx-C / TH-Q13xx-C
COOLING : Water
• Flow : 0.5 - 1 l/mn
• Pressure : 1 - 3 bar
• Temperature : 25 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Demande d'information
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300W_to_2kW_QCW_Actively_cooled_Stacked_array
Australia
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PRELIMINARY DATA TH-Q14xx-C
500W to 2.5kW QUASI-CW STACKED ARRAYS
DESCRIPTION
The TH-Q14xx-C series are high optical power laser diodes stacks
assembled on a liquid cooled heatsink.
These stacks are based upon highly efficient 1cm linear bar
arrays. According to the number of assembled bars "xx" , a large
range of optical power are available from 500W QCW to 2.5kW
QCW.
Low thermal impedance liquid cooled package allows easy
control of the central wavelength. So the TH-Q14xx-C stacks are
ideal for different applications : pumping rod or slab solid state lasers, illuminators...
Assembly in a compact and rugged package allows easy connection.
MAIN FEATURES
500W to 2500W peak optical power●
Standard QCW operation (200µs/100Hz)●
Up to 500 mJ energy per pulse●
795 to 860nm wavelength range●
Liquid cooled package●
High conversion efficiency●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Fluid temperature: 25°C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
Thomson LaserDiodes - Produit : th-q14xx-c
Products are designed with 5 to 25 linear bar arrays.
Characteristics presented in the following table are respectively for 10 bars( TH-Q1410-C)
and for 25 bars( TH-Q1425-C).
PARAMETERS TH-Q1410-C TH-Q1425-C UNITS
QCW output power 1000 2500 Watt
Energy per pulse 200 500 mJ
Emitting area 10 x 3.6 10 x 9.6 mm x mm
Threshold current 22 22 Amp.
Operating current 120 120 Amp.
Operating voltage 21 52 Volt
Total efficiency 39 to 44 39 to 44 %
Beam divergence (FWHM) 10 x 40 10 x 40 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
- Spectral width is < 4nm FWHM ( < 3nm on request )
- Other wavelength selections are available in the range of 795nm to 860nm
- Specifications are for nominal lifetime 109 pulses ( for 200µs pulse width )
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1210-C TH-Q1225-C UNITS
QCW output power 1050 2600 Watt
Pulse width 300 300 µs
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
COOLING : Water
Flow : 0.5 - 1 l/mn●
Pressure : 1 - 3 bar●
Temperature : 25 °C●
Thomson LaserDiodes - Produit : th-q14xx-c
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Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-q14xx-c
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TH-Q14xx-C
500W to 2.5kW QUASI-CW STACKED ARRAYS
DESCRIPTION
The TH-Q14xx-C series are high optical power
laser diodes stacks assembled on a liquid
cooled heatsink.
These stacks are based upon highly efficient
1cm linear bar arrays. According to the number
of assembled bars "xx" , a large range of optical
power are available from 500W QCW to 2.5kW
QCW .
Low thermal impedance liquid cooled package
allows easy control of the central wavelength.
So the TH-Q14xx-C stacks are ideal for
different applications : pumping rod or slab
solid state la sers , illuminators...
Assembly in a compact and rugged package
allows easy connection.
MAIN FEATURES
• 500W to 2500W peak optical power
• Standard QCW operation (200µs/100Hz)
•Up to 500 mJ energy per pulse
• 795 to 860nm wavelength range
• Liquid cooled package
• High conversion efficiency
• Highly reproducible MOCVD process
• GaAlAs quantum well design
TH-Q14xx-C
SPECIFICATIONS
Fluid temperature: 25°C
Quasi-continuous mode: pulse width = 200µs
repetition = 100Hz
Products are designed with 5 to 25 linear bar arrays .
Characteristics presented in the following table are respective ly for 10 bars( TH-Q1410-C) and for
25 bars( TH-Q1425-C).
PARAMETERS TH-Q1410-C TH-Q1425-C UNITS
QCW output power 1000 2500 Watt
Energy per pulse 200 500 mJ
Emitting area 10 x 3.6 10 x 9.6 mm x mm
Threshold current 22 22 Amp.
Operating current 120 120 Amp.
Operating voltage 21 52 Volt
Total efficiency 39 to 44 39 to 44 %
Beam divergence (FWHM) 10 x 40 10 x 40 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
- Spectral width is < 4nm FWHM ( < 3nm on request )
- Other wavelength selections are available in the range of 795nm to 860nm
- Specifications are for nominal lifetime 109 pulses ( for 200µs pulse width )
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1210-C TH-Q1225-C UNITS
QCW output power 1050 2600 Watt
Pulse width 300 300 µ s
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
TH-Q14xx-C
COOLING : Water
• Flow : 0.5 - 1 l/mn
• Pressure : 1 - 3 bar
• Temperature : 25 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
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TH-Q1324-D
HIGH TEMPERATURE 1300W QCW STACKED
ARRAYS
DESCRIPTION
TH-Q1324-D is an actively cooled laser diode stack specifically
designed to operate at very high temperature.
Laser diode bar array benefit of fully mastered MOCVD quantum
well technology. Appropriate design of epitaxial layers has been
developed for improved efficiency and reliable operation at very
high junction temperature operation.
Packaging and heat exchanger have been optimized to reduce the
overall thermal resistance. TH-Q1324-D stacks are ideal for
different applications under severe environmental conditions: pumping rods or slabs solid
state lasers, illuminators...
Assembly in a compact and rugged package allows easy connection.
MAIN FEATURES
1300W peak optical power●
QCW operation (200µs/100Hz)●
Over 60°C operating fluid temperature●
Up to 260 mJ energy per pulse●
Low thermal resistance assembly●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Fluid temperature: 60° C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
Product is designed with 24 linear bar arrays
Thomson LaserDiodes - Produit : th-q1324-d
PARAMETERS TH-Q1324-D UNITS
QCW output power 1300 Watt
Energy per pulse 260 mJ
Emitting area 10 x 9.4 mm x mm
Threshold current 25 Amp.
Operating current 90 Amp.
Operating voltage 45 Volt
Total efficiency 31 to 36 %
Beam divergence (FWHM) 12 x 40 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm●
Spectral width is < 4nm FWHM●
Other wavelength selections are available in the range of 795nm to 820nm●
Specifications are for nominal lifetime 108 pulses (for 200µs pulse width)●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1324-D UNITS
QCW output power 1400 Watt
Pulse width 250 µs
Maximum duty cycle 3 %
Reverse voltage 3 Volt
Operating fluid temperature +20 to +70 °C
Storage temperature -40 to +85 °C
Note:Operation at temperature below dew point requests to use dry N2 environment●
COOLING : Water
Flow : 0.5 -1 l/mn●
Pressure : 1 - 3 bar●
Temperature : 20 - 60 °C●
Thomson LaserDiodes - Produit : th-q1324-d
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Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-q1324-d
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TH-Q1324-D
HIGH TEMPERATURE 1300W QCW STACKED ARRAYS
DESCRIPTION
TH-Q1324-D is an actively cooled laser diode
stack specifically designed to operate at very
high temperature.
Laser diode bar array benefit of fully mastered
MOCVD quantum well technology. Appropriate
design of epitaxial layers has been developed
for improved efficiency and reliable operation at
very high junction temperature operation.
Packaging and heat exchanger have been
opimized to reduce the overall thermal
resistance. TH-Q1324-D stacks are ideal for
different applications under severe
environmental conditions: pumping rods or
slabs solid state lasers, illuminators....
Assembly in a compact and rugged package
allows easy connection.
MAIN FEATURES
• 1300W peak optical power
• QCW operation (200µs/100Hz)
• Over 60°C operating fluid temperature
•Up to 260 mJ energy per pulse
• Low thermal resistance assembly
• Highly reproducible MOCVD process
• GaAlAs quantum well design
TH-Q1324-D
SPECIFICATIONS
Fluid temperature: 60° C
Quasi-continuous mode: pulse width = 200µs
repetition = 100Hz
Product is designed with 24 linear bar arrays
PARAMETERS TH-Q1324-D UNITS
QCW output power 1300 Watt
Energy per pulse 260 mJ
Emitting area 10 x 9.4 mm x mm
Threshold current 25 Amp.
Operating current 90 Amp.
Operating voltage 45 Volt
Total efficiency 31 to 36 %
Beam divergence (FWHM) 12 x 40 degree
Note:
• Variation of wavelength is approximately 0.26 to 0.3 nm/°C
• Standard wavelength is 808nm
• Tolerance on wavelength is +/- 4nm
• Spectral width is < 4nm FWHM
• Other wavelength selections are available in the range of 800nm to 820nm
• Specifications are for nominal lifetime 108 pulses (for 200µs pulse width)
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1210-B UNITS
QCW output power 1400 Watt
Pulse width 250 µs
Maximum duty cycle 3 %
Reverse voltage 3 Volt
Operating fluid temperature +20 to +70 °C
Storage temperature -40 to +85 °C
Note:
• Operation at temperature below dew point requests to use dry N2 environment
TH-Q1324-D
COOLING : Water
• Flow : 0.5 -1 l/mn
• Pressure : 1 - 3 bar
• Temperature : 20 - 60 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
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TH-Q1312-AS / TH-Q1410-AS
1 kW QUASI-CW HIGH BRIGHTNESS
STACKED ARRAY
DESCRIPTION
TH-Q1312-AS and TH-Q1410-AS are high brightness optical
power laser diode sources.
These products are based upon high packing density of efficient
1cm linear bar arrays which leads to 9 to 10 kW/cm2 of optical
power density in Quasi-CW mode. The quality of the process of
these GaAlAs laser diodes allows longer lifetime and improved
reliability.
These 'High Brightness' stacked arrays can be also easily
associated with optical concentrator. So, products with optical
power density of 40 kW/cm2 can be proposed. Such a source is ideal to design solid state
lasers with optimized pumping efficiency.
Assembly in a compact and rugged package allows easy connection to a heat exchanger for a
good temperature control.
MAIN FEATURES
1000 W peak optical power●
QCW operation ( typical 150µs/25Hz)●
Up to 150mJ energy per pulse●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
Possibility to design over 40kW/cm2 optical source●
SPECIFICATIONS
Thomson LaserDiodes - Produit : th-q1312-1410as
Case temperature: 25°C
Quasi-continuous mode: pulse width = 150µs repetition = 20Hz
PARAMETERS TH-Q1312-AS TH-Q1410-AS UNITS
QCW output power 1000 1000 Watt
Energy per pulse 150 150 mJ
Emitting area 9.6 x 1.1 9.6 x 0.9 mm x mm
Threshold current 20 22 Amp.
Operating current 100 120 Amp.
Operating voltage 24 21 Volt
Total efficiency 39 to 44 38 to 43 %
Beam divergence 10 x 40 10 x 40 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 3nm
- Spectral width is < 6nm for TH-Q1312-AS and < 7 nm for TH-Q1410-AS
- Other wavelength selections are available in the range of 795nm to 860nm
- Specifications are for nominal life time 109 pulses ( for 150µs pulse width )
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1312-AS TH-1410-AS UNITS
QCW output power 1100 1100 Watt
Pulse width 500 400 µs
Duty cycle 0.5 0.4 %
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to + 85 °C
Note:
- Operation at temperature below dew point requests to use dry N2 environment.
NOTES:
- Anode and cathode can be inverted on request
- The two electrical pads have to be isolated from heatsink
Thomson LaserDiodes - Produit : th-q1312-1410as
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Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : th-q1312-1410as
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TH-Q1312-AS / TH-Q1410-AS
1 kW QUASI-CW HIGH BRIGHTNESS STACKED ARRAY
DESCRIPTION
TH-Q1312-AS and TH-Q1410-AS are high
brightness optical power laser diode sources.
These products are based upon high packing
density of efficient 1cm linear bar arrays which
leads to 9 to 10 kW/cm² of optical power
density in Quasi-CW mode. The quality of the
process of these GaAlAs laser diodes allows
longer lifetime and improved reliability.
These ‘High Brightness’ stacked arrays can be
also easily associated with optical concentrator.
So, products with optical power density of 40
kW/cm² can be proposed. Such a source is
ideal to design solid state lasers with optimized
pumping efficiency.
Assembly in a compact and rugged package
allows easy connection to a heat exchanger for
a good temperature control.
MAIN FEATURES
• 1000 W peak optical power
• QCW operation ( typical 150µs/25Hz)
• Up to 150mJ energy per pulse
• 795 to 860nm wavelength range
• Highly reproducible MOCVD process
• GaAlAs quantum well design
• Possibility to design over 40kW/cm² optical source
TH-Q1312-AS / TH-Q1410-AS
SPECIFICATIONS
Case temperature: 25°C
Quasi-continuous mode: pulse width = 150µs
repetition = 20Hz
PARAMETERS TH-Q1312-AS TH-Q1410-AS UNITS
QCW output power 1000 1000 Watt
Energy per pulse 150 150 mJ
Emitting area 9.6 x 1.1 9.6 x 0.9 mm x mm
Threshold current 20 22 Amp.
Operating current 100 120 Amp.
Operating voltage 24 21 Volt
Total efficiency 39 to 44 38 to 43 %
Beam divergence 10 x 40 10 x 40 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 3nm
- Spectral width is < 6nm for TH-Q1312-AS and < 7 nm for TH-Q1410-AS
- Other wavelength selections are available in the range of 790nm to 820nm
- Specifications are for nominal life time 109 pulses ( for 150µs pulse width )
ABS OLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1312-AS TH-1410-AS UNITS
QCW output power 1100 1100 Watt
Pulse width 500 400 µ s
Duty cycle 0.5 0.4 %
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to + 85 °C
Note:
- Operation at temperature below dew point requests to use dry N2 environment.
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
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Présentation
institutionnelle Références Les produits Nouveautés,
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Diodes Laser pour la Détection de Gaz
Principle
Laser Spectroscopy is a tool to accurately measure narrow absorption lines in the near-infrared
spectral region (1.30µm - 1.8µm). Gas molecules absorb energy at specific wavelength, providing a
unique print for that species. This process is highly selective such that slighly away from the
absorption lines their is no absorption. By tuning the laser's beam wavelength to the desired gas
absorption line and by precise measurement of the absorption level of that beam, it is possible to
determine the concentration of the gas. Resolution of the measurement is generally expressed in
ppm.
Product specification : SE 635
Applications
Production line quality control (e.g. H2O monitoring in pyrotechnic, pharmaceutical,
semiconductor and food industries)
●
Gas-waste monitoring at the points of discharge in the environment●
In-situ control of combustion process●
sensor for atmospheric trace gas analysis●
Other applications include:
Dust monitoring,❍
Medical,...❍
●
Gases of particular interest
Gases Species Wavelength (nm)
H2F1330
H2O1365
HB21341
NH31544
H2S1578
CO 1567
CO21573
TLD : Produits - Diodes Laser
CH41651
HCl 1747
TLD : Produits - Diodes Laser
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SE 635
DFB LASER DIODE MODULE
Wavelength selection
DESCRIPTION
The SE635 DFB is a family of Laser Diode module in a 14 pin package.
SE 635 contains a DFB chip assembled on a TEC-cooler with a
monitoring PIN photodiode and coupled into a single mode fiber.
This coupling is made through a tilted fiber to limit the feedback
reflections into the DFB.
DFB Laser Diodes are tuned to the specific wavelength
corresponding to the Gas of particular interest.
Accurate single mode fiber optical coupling allows stable optical
output power. An Optical Isolator can be inserted for highly sensitive detection.
Full MOCVD process for the laser diode and a strong package expertise gives highly reliable
laser diode modules.
MAIN FEATURES
Single mode fiber coupled devices●
Over 1mW CW optical power●
1.3µm to 1.8µm wavelength coverage●
Accurate wavelength selection ( ± 2nm)●
PIN photodiode for monitoring●
Optical isolator (option)●
Highly reliable MOCVD process●
SPECIFICATIONS
Temperature: 25°C
Thomson LaserDiodes - Produit : se 635
PARAMETERS Min. Typ. Max. UNITS
Thermistor (@ 25°C) 10 k
Thermistor coefficient 4 % / °C
TE Cooler :
-current
- voltage 1
2A
V
Average optical power 0.5 mW
Slope efficiency (@ 500µW) 9 15 µW / mA
Threshold current 20 30 40 mA
Forward voltage 1.2 1.5 V
Serial resistance 3 10 Ohm
Wavelength on request nm
Spectral width (-3dB) 0.4 nm
Side mode suppression 30 dB
Temperature drift 1 A° / °C
Current drift 0.1 A° / mA
Monitoring photocurrent 450 µA
Monitoring frequency response (R1=50 ) 100 MHz
Relative Intensity Noise (optical reflection < 25 dB) -120 dB / Hz
Note: More standard wavelengths: 1512nm, 1564nm, 1600nm, 1740nm●
Other wavelengths can be realized on request●
Standard wavelength accuracy is +/- 2nm●
Optical isolator can be inserted on request●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Typ. Max. UNITS
Case Temperature range -20 +60 °C
Storage Temperature -40 +85 °C
Demande d'information Retour liste Version Pdf
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Thomson LaserDiodes - Produit : se 635
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : se 635
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SE 635
DFB LASER DIODE MODULE
Wavelength selection
DESCRIPTION
The SE635 DFB is a family of Laser Diode
module in a 14 pin package.
SE 635 contains a DFB chip assembled on a
TEC-cooler with a monitoring PIN photodiode
and coupled into a single mode fiber. This
coupling is made through a tilted fiber to limit
the feedback reflections into the DFB.
DFB Laser Diodes are tuned to the specific
wavelength corresponding to the Gas of
particular interest.
Accurate single mode fiber optical coupling
allows stable optical output power. An Optical
Isolator can be inserted for highly sensitive
detection.
Full MOCVD process for the laser diode and a
strong package expertise gives highly reliable
laser diode modules.
MAIN FEATURES
• Single mode fiber coupled devices
• Over 1mW CW optical power
• 1.3µm to 1.8µm wavelength coverage
• Accurate wavelength selection ( + 2nm)
• PIN photodiode for monitoring
• Optical isolator (option)
• Highly reliable MOCVD process
SE 635
SPECIFICATIONS
Temperature: 25°C
PARAMETERS Min. Typ. Max. UNITS
Thermistor (@ 25°C) 10 kΩ
Thermistor coefficient 4 % / °C
TE Cooler : -current
- voltage 1
2A
V
Average optical power 0.5 mW
Slope efficiency (@ 500µW) 9 15 µW / mA
Threshold current 20 30 40 mA
Forward voltage 1.2 1.5 V
Serial resistance 3 10 Ohm
Wavelength on
request nm
Spectral width (-3dB) 0.4 nm
Side mode suppression 30 dB
Temperature drift 1 A° / °C
Current drift 0.1 A° / mA
Monitoring photocurrent 450 µA
Monitoring frequency response (R1=50 Ω)100 MHz
Relative Intensity Noise
(optical reflection < 25 dB) -120 dB / Hz
Note:
• More standard wavelengths: 1512nm, 1564nm, 1600nm, 1740nm
• Other wavelengths can be realized on request
• Standard wavelength accuracy is +/- 2nm
• Optical isolator can be inserted on request
ABS OLUTE MAXIMUM RATINGS
PARAMETERS Min. Typ. Max. UNITS
Case Temperature range -20 +60 °C
Storage Temperature -40 +85 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
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Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Fonctions optoélectroniques
Pour illustrer l'expertise de TLD, le tableau suivant décrit quelques types de modules 'Transmitters'
et 'Receivers'.
TRANSMITTERS
High frequency Laser Diode Module - compact package / high
temperature range -
HFLM 3306
Pour plus d'informations
622 Mb/s Digital Transmitter Module
TX20622
Pour plus d'informations
High frequency Laser Transmitter
HFLT
Pour plus d'informations
Nous consulter pour les autres fonctions.
RECEIVERS
Analog receiver module - 10 MHz to 1 GHz
ARM 31000
Pour plus d'informations
Digital Receiver modules
RX 20622
Pour plus d'informations
TLD : Produits - Fonctions Optoelectroniques
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HFLM 3306
High Frequency Laser Diode Module
DESCRIPTION
The HFLM 3306 product is a compact package, High Frequency
Laser Diode Module. Basic component is a low threshold
GaInAsP/InP BH laser diode made by Low pressure Metal
Organic Chemical Vapor Deposition process, optimized to
operate at high temperature. Coupled optical power into single
mode fiber is monitored by a InGaAs photodiode and a thermistor
controls the temperature.
Assembly is based upon hybrid technology design to ensure a 50
Ohm input impedance and to optimize bias circuit. Highly
efficient coupling into a single mode fiber gives more than 1 mW of modulated optical power.
The ceramic substrate and the package have been specifically designed to reduce overall
volume (< 0.5cm3). All the technologies, as YAG welding for fiber fixing, have been qualified
for a wide temperature range operation.
MAIN FEATURES
High frequency modulation capability (> 10GHz)●
50 input●
Low threshold current GaInAsP BH diode structure●
Highly coupled optical power●
Stability of fiber coupling●
Compact package●
Qualified for a large storage temperature range: -65oC to +150oC●
SPECIFICATIONS
Temperature: + 25oC
Thomson LaserDiodes - Produit : hflm 3306
PARAMETERS Min. Typ. Max. UNITS
Optical output power 1 mW
Wavelength range 1280 1330 nm
Spectral width RMS ( ) 2.5 nm
Input impedance 50
Input VSWR 2.2
Bandwidth (± 3dB) 10 GHz
Output modulation ratio 0.04 mW/mA
Signal to noise ratio (m=1) 120 135 dB/Hz
3nd order intermodulation (m1 = m2 = 0.3) -45 dBc
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
RF input power 100 mW
Operating case Temperature range -40 +85 oC
Storage Temperature -65 +150 oC
Demande d'information Retour liste Version Pdf
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Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : hflm 3306
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HFLM 3306
HIGH FREQUENCY LASER DIODE MODULE
DESCRIPTION
The HFLM 3306 product is a compact package,
High Frequency Laser Diode Module. Basic
component is a low threshold GaInAsP/InP BH
laser diode made by Low pressure Metal Organic
Chemical Vapor Deposition process, optimized
to operate at high temperature. Coupled optical
power into single mode fiber is monitored by a
InGaAs photodiode and a thermistor controls the
temperature.
Assembly is based upon hybrid technology
design to ensure a 50 Ohm input impedance and
to optimize bias circuit. Highly efficient coupling
into a single mode fiber gives more than 1 mW
of modulated optical power.
The ceramic substrate and the package have
been specifically designed to reduce overall
volume (< 0.5cm3). All the technologies, as YAG
welding for fiber fixing, have been qualified for a
wide temperature range operation.
MAIN FEATURES
• High frequency modulation capability (> 10GHz)
• 50 Ω input
• Low threshold current GaInAsP BH diode structure
• Highly coupled optical power
• Stability of fiber coupling
• Compact package
• Qualified for a large storage temperature range: -65°C to +150°C
HFLM 3306
SPECIFICATIONS
Temperature: + 25°C
PARAMETERS Min. Typ. Max. UNITS
Optical output power 1 mW
Wavelength range 1280 1330 nm
Spectral width RMS (σ)2.5 nm
Input impedance 50 Ω
Input VSWR 2.2
Bandwidth (+ 3dB) 10 GHz
Output modulation ratio 0.04 mW/mA
Signal to noise ratio (m=1) 120 135 dB/Hz
3nd order intermodulation
(m1 = m2 = 0.3) -45 dBc
ABS OLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
RF input power 100 mW
Operating case Temperature range -40 +85 °C
Storage Temperature -65 +150 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Demande d'informations
Version PDF
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TX 20622
622 Mb/s Digital Transmitter Module
DESCRIPTION
The TX20622 product is a high performance, cost effective
module for serial data communication applications specified for a
data rate up to 622 Mb/s.
This Transmitter integrates a 1300nm Fabry Perot laser diode
optically coupled into a single mode fiber. The output power is
controlled through a specific circuit via a monitor photodiode.
The electronic circuit provides two controls which maintain
constant the output optical power level both for a digital 'one' and a digital 'zero' on the input.
These two loops compensate effects due to thermal variations on the laser diode
characteristics. So, the transmitter circuit can operate from -40°C to +85°C.
When there is no input digital stream, the loop is blocked to protect the laser for the case of
appearance of a new signal. An alarm is provided in that case.
Another alarm is provided when current into the laser goes up to 150% of the initial value.
A digital interface, between digital inputs and laser driver circuit, controls the peak to peak
voltage to the laser modulator input. So, variations can be accepted on the digital input levels.
MAIN FEATURES : APPLICATIONS
SONET OC-12 / SDH STM 4 Equipment Interconnect and ATM applications●
Data link●
Fiber in the loop●
SPECIFICATIONS
Operating Case Temperature: - 40°C to + 85°C
Thomson LaserDiodes - Produit : tx 20622
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1260 1310 1340 nm
Spectral width (rms) 4 7 nm
Average optical power (*) -12 - 10 - 8 dBm
Optical power stability (-40°C to +85°C) ± 1.5 dB
Extinction ratio 8 12 17 dB
Bit rate ( 223 - 1 PRBS NRZ) 20 622 Mb/s
Data inputs ECL 10K compatible
Alarm on (Laser current limitation) +4 V
Alarm off (Laser current limitation) 1 V
No input signal alarm on +4 V
No input signal alarm off 1 V
Thermistor at +25°C 10 k
Thermistor coefficient 4 % / °C
Positive supply voltage + 4.75 + 5 + 5.25 V
Positive supply current (**) 60 80 mA
Negative supply voltage - 4.75 - 5 - 5.25 V
Negative supply current (**) 150 250 mA
DC power consumption(**) 1 1.7 W
(*) measured at point S in accordance with CCITT G. 957
(**) Depending on the case temperature
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
Positive supply voltage + 6 V
Negative supply voltage - 6 V
Fiber bending radius 40 mm
Operating Case Temperature range -40 +85 °C
Storage Temperature -40 +85 °C
Demande d'information Retour liste Version Pdf
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Thomson LaserDiodes - Produit : tx 20622
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : tx 20622
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TX 20622
622 Mb/s DIGITAL TRANSMITTER MODULE
DESCRIPTION
The TX20622 product is a high performance, cost
effective module for serial data communication
applications specified for a data rate up to 622
Mb/s.
This Transmitter integrates a 1300nm Fabry Perot
laser diode optically coupled into a single mode
fiber. The output power is controlled through a
specific circuit via a monitor photodiode. The
electronic circuit provides two controls which
maintain constant the output optical power level
both for a digital ‘one’ and a digital ‘zero’ on the
input. These two loops compensate effects due to
thermal variations on the laser diode
characteristics. So, the transmitter circuit can
operate from -40°C to +85°C.
When there is no input digital stream, the loop is
blocked to protect the laser for the case of
appearance of a new signal. An alarm is provided
in that case.
Another alarm is provided when current into the
laser goes up to 150% of the initial value.
A digital interface, between digital inputs and laser
driver circuit, controls the peak to peak voltage to
the laser modulator input. So, variations can be
accepted on the digital input levels.
MAIN FEATURES : APPLICATIONS
• SONET OC-12 / SDH STM 4 Equipment Interconnect and ATM applications
• Data link
• Fiber in the loop
TX 20622
SPECIFICATIONS
Operationg Case Temperature: - 40°C to + 85°C
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1260 1310 1340 nm
Spectral width (rms) 4 7 nm
Average optical power (*) -12 - 10 - 8 dB m
Optical power stab ility (-40 °C to +85°C) + 1.5 dB
Extinction ratio 8 12 17 dB
Bit rate ( 223 - 1 PRBS NRZ) 20 622 Mb/s
Data inputs ECL 10K compatible
Alarm on (Laser current limitation) +4 V
Alarm off (Laser current limitation) 1 V
No input signal alarm on +4 V
No input signal alarm off 1 V
Thermistor at +25°C 10 kΩ
Thermistor coefficient 4 % / °C
Positive supply vo ltage + 4.75 + 5 + 5.25 V
Positive supply current (**) 60 80 mA
Negative supply voltage - 4.75 - 5 - 5.25 V
Negative supply current (**) 150 250 mA
DC power consumption(**) 11.7W
(*) measured at point S in accordance with CCITT G. 957
(**) Depending on the case temperature
TX 20622
ABS OLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
Positive supply vo ltage + 6 V
Negative supply voltage - 6 V
Fiber bending radius 40 mm
Operating Case Temperature range -40 +85 °C
Storage Temperature -40 +85 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Demande d'informations
Version PDF
Retour liste
HFLT xxxx
High Frequency Laser Transmitter
DESCRIPTION
The HFLTxxxx products are High Frequency Laser Transmitters
built to control DIL laser diode modules.
Electronic circuit ensures both the Laser Diode temperature
stabilization (+25°C in standard) and the regulation of the average
output optical power.
HFLTxxxx transmitters are easy to use units which require no
adjustments from the user. These Transmitters are biased by an
external DC power supply(+/-5V). An RF modulation signal can be applied to the laser diode
through a SMA connector.
The DC power supply is made through a standard 9 pin Sub-D connector. This connector also
provides analog information from the Laser Module: laser current, monitoring photodiode
current, temperature error and Peltier current.
These Transmitters can be associated with TLD Receiver counterparts which is an easy way to
realize broad-band analog fiber link.
MAIN FEATURES
Analog signal fiber transmission●
Different wavelength available●
Single mode or multimode fiber possibilities●
Low noise●
Stabilized optical power●
Temperature stabilization●
High reliability●
SPECIFICATIONS
Thomson LaserDiodes - Produit : hflt
Temperature: + 25°C
PARAMETERS Min. Typ. Max. UNITS
Optical characteristics:
- Wavelength
HFLT 1300
HFLT 1550
- Optical output power
- Spectral width (rms)
- Relative Intensity Noise
1280
1500
1
1300
1550
1.5
2
-135
1340
1600
2
-130
nm
nm
mW
nm
dB/Hz
Input impedance
-Input VSWR 2 3
Modulation efficiency:
- Electrical to Optical conversion 0.02 0.04 W/A
DC power suppply ± 4.5 ± 5 ± 5.5 V
RF characteristics:
- Modulation bandwith (-3dB)
HFLT 1300
HFLT 1303
- Ripple over -3dB bandwidth
- Low cut off frequency
1
3
100
± 1
GHz
GHz
dB
kHz
Monitoring outputs
- Laser current
- Monitoring photodiode
- Peltier current
- Temperature error
(reference +25°C = 10k )
1
1
1
1.25
mV/mA
mV/mA
mV/mA
mV/
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
RF input power 20 dBm
Power supply ± 4 ± 8 V
Operating case Temperature range -20 +65 °C
Storage Temperature -40 +80 °C
Thomson LaserDiodes - Produit : hflt
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : hflt
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HFLT xxxx
HIGH FREQUENCY LASER TRANSMITTER
DESCRIPTION
The HFLTxxxx products are High Frequency
Laser Transmitters built to control DIL laser diode
modules.
Electronic circuit ensures both the Laser Diode
temperature stabilization (+25°C in standard) and
the regulation of the average output optical power.
HFL Txxxx tr a n s m i t t e r s are e asy to us e u n i t s which
require no adjustments from the user. These
Transmitters are biased by an external DC power
supply(+/-5V). An RF modulation signal can be
applied to the laser diode through a SMA
connector.
The DC power supply is made through a standard
9 pin Sub-D connector. This connector also
provides analog informations from the Laser
Module: laser current, monitoring photodiode
current, temperature error and Peltier current.
These Transmitters can be associated with TLD
Receiver counterparts which is an easy way to
realize broad-band analog fiber link.
MAIN FEATURES
• Analog signal fiber transmission
• Different wavelength available
• Single mode or multimode fiber possibilities
• Low noise
• Stabilized optical p ower
• Temperature stab ilization
• High reliability
HFLTxxxx
SPECIFICATIONS
Temperature: + 25°C
PARAMETERS Min. Typ. Max. UNITS
Optical characteristics:
- Wavelength HFLT 1300
HFLT 1550
- Optical output power
- Spectral width (rms)
- Relative Intensity Noise
1280
1500
1
1300
1550
1.5
2
-135
1340
1600
2
-130
nm
nm
mW
nm
dB/Hz
Input impedance
-Input VSWR 2 3
Modulation efficiency:
- Electrical to Optical conversion 0.02 0.04 W/A
DC power suppply + 4.5 + 5 + 5.5 V
RF characteristics:
- Modulation bandwith (-3dB)
HFLT 1300
HFLT 1303
- Ripple over -3dB bandwidth
- Low cut off frequency
1
3
100
+ 1
GHz
GHz
dB
kHz
Monitoring outputs
- Laser current
- Monitoring photodiode
- Peltier current
- Temperature error
(reference +25°C = 10k Ω)
1
1
1
1.25
mV/mA
mV/mA
mV/mA
mV/Ω
HFLTxxxx
ABS OLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
RF input power 20 dBm
Power supply + 4 + 8 V
Operating case Temperature range -20 +65 °C
Storage Temperature -40 +80 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
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ARM 31000
Analog receiver Module 30 - 1000 MHz
DESCRIPTION
The ARM 31000 [Analog Receiver Module 1000 MHz
bandwidth] module contains a III-V PIN photodiode and a linear
electronic circuit . The basic design is based upon a
transimpedance preamplifier circuit. The module is built on a
thick film alumina substrate to achieve a bandwidth up to 1 GHz.
The pigtail is designed with a tilted single fiber to keep the optical
reflection level lower than -45 dB.
The ARM 31000 is mounted in a standard 16 pin DIP package.
The receiver has a very low distorsion level as requested for high quality AM analog
transmission with a very good carrier to noise ratio.
The module is supplied with a +5V (200mA) for the preamplifier and a +12V to feed the PIN
photodiode (1mA typical). So, the whole power consumption is lower than 1.2W.
MAIN FEATURES
Large bandwidth: 30 to 1000MHz●
Very low intermodulation product●
High carrier to noise ratio●
1µm to 1.55µm wavelength coverage●
Single mode fiber with low back reflection●
Efficient CATV receiver●
Adapted for Sub Carrier Multiplex transmission●
SPECIFICATIONS
Temperature: + 25oC
Thomson LaserDiodes - Produit : arm 31000
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1000 1600 nm
Photodiode responsivity 0.9 0.95 A / W
Optical return loss -60 - 50 - 45 dB
Bandwidth (-3 dB) 1000 1200 1350 MHz
Bandwidth flatness (50 to 860 MHz) ± 0.5 ± 1 dB
Dynamic ripple (in 8MHz bandwidth) ± 0.25 dB
Noise Equivalent Power 5 6 6.5 pA / Hz
Transimpedance value at 800MHz 400
Output VSWR
Rload = 75 (50 - 860 MHz) 12 15 dB
Carrier to noise ratio (C/N) (*)
( BW = 5MHz, m= 4%, Popt =0 dBm) 55 dB
Second Order Intermodulation product (*) - 70 dBc
Third Order Intermodulation product (*) - 75 dBc
Current supply @ + 5V 200 230 mA
Output power level per carrier 97 102 dB µV
(*) 2tone test conditions m1 = m2 = 35% (each laser is modulated with a modulation index of
70%)
Input optical power = 0 dBm
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
Photodiode bias voltage + 15 V
Preamplifier supply voltage + 8 V
Input Optical Power + 5 dBm
Operating Temperature range -40 +85 oC
Storage Temperature -40 +85 oC
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
Thomson LaserDiodes - Produit : arm 31000
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : arm 31000
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ARM 31000
ANALOG RECEIVER MODULE 30 - 1000 MHz
DESCRIPTION
The ARM 31000 [Analog Receiver Module 1000
MHz bandwidth] module contains a III-V PIN
photodiode and a linear electronic circuit . The
basic design is based upon a transimpedance
preamplifier circuit. The module is built on a thick
film alumina substrate to achieve a bandwidth up
to 1 GHz.
The pigtail is designed with a tilted single fiber to
keep the optical reflection level lower than -45 dB.
The ARM 31000 is mounted in a standard 16 pin
DIP package. The receiver has a very low
distorsion level as requested for high quality AM
analog transmission with a very good carrier to
noise ratio.
The module is supplied with a +5V (200mA) for
the preamplifier and a +12V to feed the PIN
photodiode (1mA typical). So, the whole power
consumption is lower than 1.2W.
MAIN FEATURES
• Large bandwidth: 30 to 1000MHz
• Very low intermodulation product
• High carrier to noise ratio
• 1µm to 1.55µm wavelength coverage
• Single mode fiber with low back reflection
• Efficient CATV receiver
• Adapted for Sub Carrier Multiplex transmission
ARM 31000
SPECIFICATIONS
Temperature: + 25°C
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1000 1600 nm
Photodiode responsivity 0.9 0.95 A / W
Optical return loss -60 - 50 - 45 dB
Bandwidth (-3 dB) 1000 1200 1350 MHz
Bandwidth flatness (50 to 860 MHz) + 0.5 + 1 dB
Dynamic ripple (in 8MHz bandwidth) + 0.25 dB
Noise Equivalent Power 5 6 6.5 pA / √ Hz
Transimpedance value at 800MHz 400 Ω
Output VSWR
Rload = 75 Ω (50 - 860 MHz) 12 15 dB
Carrier to noise ratio (C/N) (*)
( BW = 5MHz, m= 4%, Popt =0 dBm) 55 dB
Second Order Intermodulation product (*) - 70 dBc
Third Order Intermodulation product (*) - 75 dBc
Current supply @ + 5V 200 230 mA
Output power level per carrier 97 102 dB µV
(*) 2tone test conditions m1 = m2 = 35% (each laser is modulated with a modulation index of 70%)
Input optical power = 0 dBm
ABS OLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
Photodiode bias voltage + 15 V
Preamplifier supply voltage + 8 V
Input Optical Power + 5 dBm
Operating Temperature range -40 +85 °C
Storage Temperature -40 +85 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Demande d'informations
Version PDF
Retour liste
RX 20622
Receiver Module
DESCRIPTION
The RX20622 is a highly performing receiver module. It is
designed for serial data communication applications respectively
specified for a signal rate at 155 Mb/s and 622 Mb/s.
This module is well suited for single mode links in at wavelengths
of 1300nm and 1550nm. It integrates the detector, the amplifier
circuit, the clock recovery and the decision circuit.
The module can detect data rates both at 155 Mb/s and 622 Mb/s just by changing a TTL
level. All electronic functions are realized on thick alumina substrate.
MAIN FEATURES
155 Mb/s and 622 Mb/s receiver●
Low noise preamplifier-amplifier circuit●
Clock recovery operating for both bit rates●
Decision and alarm circuits●
1.3µm to 1.6µm wavelength coverage●
Single mode fiber●
SPECIFICATIONS
Temperature: + 25°C
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1260 1310 1560 nm
Thomson LaserDiodes - Produit : rx 20622
Sensitivity (BER 10-9)
@ 155.52 Mb/s
@ 622.08 Mb/s -37
-33 -36
-32 dBm
dBm
Overload -7 -6 dBm
Low Optical alarm on Yes
HighOptical alarm on Yes
Power Supply Voltage
- Negative
- Positive - 4.75
+ 4.75 -5
+ 5 -5.25
+ 5.25 V
V
Power Supply Current (*)
- Negative
- Positive 300
150 mA
mA
DC power consumption 2.2 W
(*) measured at S point in accordance with CCITT G.957
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
Operating temperating range -30 + 70 °C
Storage temperature - 40 + 85 °C
Positive supply voltage + 6 V
Negative supply voltage - 6 V
Minimum fiber bending radius 40 mm
Storage Temperature -40 +85 °C
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : rx 20622
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RX 20622
RECEIVER MODULE
DESCRIPTION
The RX20622 is a highly performing receiver
module. It is designed for serial data
communication applications respectively specified
for a signal rate at 155 Mb/s and 622 Mb/s.
This module is well suited for single mode links in
at wavelengths of 1300nm and 1550nm. It
integrates the detector, the amplifier circuit, the
clock recovery and the decision circuit.
The module can detect data rates both at 155
Mb/s and 622 Mb/s just by changing a TTL level. All
electronic functions are realized on thick alumina
substrate.
MAIN FEATURES
• 155 Mb/s and 622 Mb/s receiver
• Low noise preamplifier-amplifier circuit
• Clock recovery operating for both bit rates
• Decision and alarm circuits
• 1.3µm to 1.6µm wavelength coverage
• Single mode fiber
RX 20622
SPECIFICATIONS
Temperature: + 25°C
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1260 1310 1560 nm
Sensitivity (BER 10-9)
@ 155.52 Mb/s
@ 622.08 Mb/s
-37
-33
-36
-32
dBm
dBm
Overload -7 -6 dBm
Low Optical alarm on Yes
High Optical alarm on Yes
Power Supply Voltage
- Negative
- Positive
- 4.75
+ 4.75
-5
+ 5
-5.25
+ 5.25
V
V
Power Supply Current (*)
- Negative
- Positive
300
150
mA
mA
DC power consumption 2.2 W
(*) measured at S point in accordance with CCITT G.957
ABS OLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
Operating temperating range -30 + 70 °C
Storage temperature - 40 + 85 °C
Positive supply vo ltage + 6 V
Negative supply voltage - 6 V
Minimum fiber bending radius 40 mm
Storage Temperature -40 +85 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Demande d'informations
Version PDF
Retour liste
DR 22488
High bit rate Receiver module (2.5 Gb/s)
DESCRIPTION
The DR 22488 module is a low cost 2.488 Gb/s receiver for long
wavelengths 1300nm and 1550nm. This receiver is based upon a
high speed photoreceiver design, using a III-V PIN photodiode
and silicon MMIC's.
The structure of the preamplifier circuit is of transimpedance type.
The module is built on a thick film alumina substrate to achieve a
bandwidth over 2 GHz.
The receiver package is an industrial 14 Pin low profile DIP pigtailed package. The standard
fiber pigtail is a 50/125 multimode one. However single mode pigtailing with low back
reflection (lower than -45dB) can be delivered on request.
MAIN FEATURES
High bit rate receiver●
Low cost design●
1.3µm to 1.55µm wavelength coverage●
Multimode pigtail●
Low back reflection single mode pigtail possibility●
SPECIFICATIONS
Temperature: + 25°C
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1300 1600 nm
Photodiode responsivity 0.95 A / W
Thomson LaserDiodes - Produit : dr 22488
Bandwith (-3 dB) 2000 MHz
Low cut-off frequency(-3db) 4 MHz
Noise Equivalent Power 9 11 13 pA / Hz
Effective transimpedance value 1500 1700 2100
Sensitivity ( STM16 BER measurement) -25 dBm
Overload (for a BER 10-9) -3 dBm
Dynamic range 22 dB
Output impedance 50
Output VSWR -12 dB
Power consumption (+12V) 50 mA
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Typ. Max. UNITS
Photodiode bias voltage + 15 V
Voltage supply + 15 V
Case Temperature range -40 +85 oC
Storage Temperature -40 +85 oC
Demande d'information Retour liste Version Pdf
Contactez nous
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Produit : dr 22488
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DR 22488
HIGH BIT RATE RECEIVER MODULE (2.5 Gb/s)
DESCRIPTION
The DR 22488 module is a low cost 2.488 Gb/s
receiver for long wavelengths 1300nm and
1550nm. This receiver is based upon a high
speed photoreceiver design, using a III-V PIN
photodiode and silicon MMIC’s.
The structure of the preamplifier circuit is of
transimpedance type. The module is built on a
thick film alumina substrate to achieve a
bandwidth over 2 GHz.
The receiver package is an industrial 14 Pin low
profile DIP pigtailed package. The standard fiber
pigtail is a 50/125 multimode one. However single
mode pigtailing with low back reflection (lower
than -45dB) can be delivered on request.
MAIN FEATURES
• High bit rate receiver
• Low cost design
• 1.3µm to 1.55µm wavelength coverage
• Multimode pigtail
• Low back reflection single mode pigtail possibility
DR 22488
SPECIFICATIONS
Temperature: + 25°C
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1300 1600 nm
Photodiode responsivity 0.95 A / W
Bandwith (-3 dB) 2000 MHz
Low cut-off frequency (-3db) 4 MHz
Noise Equivalent Power 9 11 13 pA / √ Hz
Effective transimpedance value 1500 1700 2100 Ω
Sensitivity
( STM16 BER measurement)
-25 dBm
Overload
(for a BER 10-9)
-3 dBm
Dynamic range 22 dB
Output impedance 50 Ω
Output VSWR -12 dB
Power consumption (+12V) 50 mA
ABS OLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
Photodiode bias voltage + 15 V
Voltage supply + 15 V
Case Temperature range -40 +85 °C
Storage Temperature -40 +85 °C
Information furnished is beleived to be accurate and reliable. However THOMSON-CSF LASER DIODES assumes no
responsability for the cons equences of use of suc h inform ation nor for any infringem ent of patents or other rights of third
parties which may result from its use. Specifications mentioned in this document are subjected to change without notice.
Copyright C 1997 THOMSON-CSF Laser Diodes http://www.laser-diodes.thomson-csf.com.
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Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Références
As an exemple of Space Application, the following presentation has been given at OE'Lase
Conference , San Jose, January 1998
VERY HIGH SPEED OPTOELECTRONIC FUNCTIONS FOR HIGH DATA RATE
COMMUNICATIONS BETWEEN SATELLITE
Georges Folcke, Jean Marc Defrancq and Dominique Geffroy
Thomson CSF Laser Diodes (Orsay) france
Bernard Roy
Matra Marconi Space (Toulouse) France
Performance requirements & systems aspects
on 830 nm wavelength
WDM technics (4 )❍
●
using very high power laser modules
240 mWatts launched into single mode fiber❍
●
using Silicon Avalanche Photodiode
very high gain value (> 300)❍ very low excess noise factor x : close to 0.2❍
●
very high bit rate : 622 Mbs per channel(155 Mbs or 622 Mbs)● based End to End attenuation 71 dB●
4 included into a common communication box 1.5 liter ; 1.5 kg●
Laser Diode characteristics
High speed package (butterfly type) with :
fiber grating pigtail❍ bandwidth higher than 1 GHz at - 3 dB❍ high speed monitoring photodiode❍
●
TLD : Références - 1
No TE-cooler❍ Popt > 200 mW CW❍ very low optical power threshold❍
more than one supplier is available today
Silicon Avalanche Photodiode
Very high sensitivity fiber pigtail devices
active area diameter of 100 mm❍
> 0.56 A/W❍ bandwidth higher than 1 GHz❍ very low parasitic capacitance 0.3 pF❍ very high gain more than 300 for VAPD in the range of 350 Volts❍ delivered on specific alumina substrate able to be integrated into "standard 14
pin DIP package"
❍
very low dark current at high gain value 25 nA max❍
●
more than one supplier is available today
Laser Driver Structure
Speed as high as possible 622 Mbs● Final design structure
first stage based on voltage amplifier❍ following by a current convertor❍ using power GaAs FET stage to drive the
laser diode
❍
the laser diode is connected to the GaAs
FET Drain giving the maximum
achievable bandwidth
❍
on the PIN monitoring photodiode peak
to peak detection to generated two error
signals
❍
●
peak level used to control the optical "one"
levels
●
low level used to control the "zero" levels●
Power consumption as low as possible
Main Transmitter Characteristics achieved
bandwidth is good enough to perform the goal of 622 Mbs bit rate● able to drive laser diode with 600 mA pp● electrical power consomption limited to :
2.2 W with 300 mA pp❍ 3.2 W with 600 mA pp❍
●
TLD : Références - 1
extinction ratio lower than 2%
Receiver Structure
Pre-amplifier based on transimpedance design
very good reproductibility in production❍ very stable design in temperature❍ dynamic range big enough in this application❍
●
Theoretical simulation approach made using standard model and presented below●
Integrated into a 14 pin DIP low profile package
Theoretical Approach
Simulation results with :
Transimpedance value 4.3 k
Idark 25 nA
x 0.2
0.56 A/W
a (PminPmax) 2 %
Mopt 110 to 160
Receiver Implementation
APD-FET pre-amplifier circuit Hybrid module 1● Post amplifier (30 dB gain)● Switches and filters● Limiter amplifier Hybrid module 2● Clock recovery and decision circuit● Peak detector and AGC
High voltage DC/DC converter On PCB
●
Sensitivity measurement results
TLD : Références - 1
622 Mbs (m=4.6%)
155Mbs (m=4.6%)
Main Receiver Characteristics
Complete receiver is working at 155 Mbs and 622 Mbs by external selection●
TLD : Références - 1
Power consumption is limited to 2.5 Watts (in +/- 5 volts)● Hybrid size in thin film technology is around 1" x 2"● Dynamic range 25 dB●
Output impedance 50 ●
Single initial adjustement : AGC point (function of the APD chip)
Further activities
Hybrid are under finalization on both functions● The pre-amplifier is already achieved● Receiver Sensitivity will be improved at least by 1 or 2 dB● Double sources aspect are under evaluation today
one source is finalized, the other one is under qualification❍
●
one receiver source is finalized, two other ones are under evaluation
TLD : Références - 1
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Specific Optoelectronic Functions
Thomson-CSF Laser Diodes will design and develop specific electronic functions
with Laser diodes modules and photoreceivers to realize customized Transmitters
and Receivers for your application.
TLD expertise in Optoelectronic functions :
TLD has over 15 years of experience in design, development, characterization and
qualification of advanced optoelectronic fonctions. This expertise covers a wide
range of performances:
Wide bandwidth circuit design: from DC to several GHz●
High speed O/E functions: 2488 Mb/s and over●
Analog Receivers Low Intermodulation products, CSO, CTB●
Very high modulation current: up to 600 mA at 622 Mb/s●
Highly sensitive receiver:
-47 dBm at 622 Mb/s ;❍
-52 dBm at 155 Mb/s❍
●
TLD expertise in Optoelectronic packaging
TLD processes a wide expertise in Optoelectronic assembly and packaging for
different non-standard environments. These severe operating conditions covers:
Wide temperature range(*):
operating from -55 °C to + 125 °C ;❍
storage from -65 °C to + 155 °C❍
●
Space environment : where size, mass or irradiation are crucial●
Nuclear environment: where irradiation is critical●
(*) certified by French DOD
TLD : References - 3
Applications
TLD can design any kind of Optoelectronic products.
Digital functions with non standard bit rate●
Pseudo digital fonctions as optical bus for Aircraft applications●
Low noise and ultra linear circuits for Analog applications●
An example is given as high speed optoelectronic functions for Space
communications between satellites.
TLD : References - 3
Présentation
institutionnelle Références Les produits Nouveautés,
Actualités Messagerie,
Contacts
Laser diodes for gas sensors
Laser Diode Spectrometer system
The system uses one Laser Diode driving a power divider. One part is sent via the
hybrid cable to the Transmitter and Receiver. The other part of the light goes to a
reference cell containing only the gas to be measured with a known concentration.
The output signal of the detector goes to the control unit which in turn optimises the
Laser Diode current for fine tuning of the wavelength output.
( by courtesy of ALTOPTRONIC AB )
Laser Diode Spectrometer system advantages
High accuracy: down to 100ppb @ 1m measurement path (depending on gas)●
Fast response time●
Minimum of maintenance●
TLD : Références - 2 - Laser diodes for gas sensors
High selectivity●
TLD : Références - 2 - Laser diodes for gas sensors
Company
profile References Products News Contacts
News
15/06/1999
New performances Fiber coupled laser bars
The TH-C17xx-Fy series are high optical power fiber coupled laser diodes sources.
The CW optical power, from 12W to 20W, is delivered through a single multimode
fiber terminated by a SMA connector. Small fiber diameter and low numerical
aperture lead to high brightness and high optical power density.
TH-C1715-F4 15W into a 400µm fiber NA 0.22
TH-C1720-F6 20W into a 600µm fiber NA 0.22
TH-C1722-F9 22W into a 940µm fiber NA 0.22
N.A. 0.16 available on request
TLD : News
TLD : News
TLD : News
Company
profile References Products News Contacts
News
08/01/1999
New fiber coupled laser bar products
The TH-C17xx-Fy series are high optical power fiber coupled laser diodes sources.
The CW optical power, from 12W to 20W, is delivered through a single multimode
fiber terminated by a SMA connector. Small fiber diameter and low numerical
aperture lead to high brightness and high optical power density.
TH-C1712-F4 12W into a 400µm fiber NA 0.22
TH-C1716-F6 16W into a 600µm fiber NA 0.22
TH-C1720-F9 20W into a 940µm fiber NA 0.22
TLD : News
TLD : News
Company
profile References Products News Contacts
News
21/04/1998
940nm - 980nm
TLD starts to offer 940nm - 980nm power laser diode bar arrays. Products are
proposed for 20W CW to 30W CW with overall efficiency over 40%. Standard
operating currents are 30A @ 20W CW and 42A @ 30W CW with operating voltage
of 1.5V. The bars can be mounted on conductively cooled package ('S' type) or on
actively cooled package: 'P' type or 'R' type for linear associations.
Pulsed diodes operating QCW can also be proposed for 60W to 80W QCW. These
bars can be assembled in all the stack configurations.
Specific operating conditions can be discussed and designed.
TLD : News
TLD : News
TLD : News
Company
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Power Laser Diodes
CW PRODUCTS
20W to 30W CW Linear bar array on conductively cooled package
TH-C1420-S
TH-C1725-S / TH-C1730-S
TH-C5520-S / TH-C5530-S (915 nm to 980 nm)
Request information
20W to 30W CW Linear bar array with actively cooled package
TH-C1420-R(n)
TH-C1420-P
TH-C1725-R(n) / TH-C1730-R(n)
TH-C1725-P / TH-C1730-P
TH-C5520-P / TH-C5530-P (915 nm to 980 nm)
Request information
Collimated diode bar
TH-C1417-PO
TH-C1725-PO
Request information
Fiber-coupled
TH-C1310-F
TH-C1315-F
Request information
QCW PRODUCTS
TLD : Produits - Power Laser Diodes
60W to 100W QCW Diode bar on conductively cooled package
TH-Q1201-A
TH-Q1301-A
TH-Q1401-A
Request information
360W to 600W QCW Conductively cooled Stacked array
TH-Q1206-A
TH-Q1306-A
TH-Q1406-A
Request information
600W to 1kW QCW Conductively cooled Stacked array
TH-Q1210-B
TH-Q1310-B
TH-Q1410-B
Request information
300W to 2kW QCW Actively cooled Stacked array
TH-Q12xx-C
TH-Q13xx-C
Request information
500W to 2.5kW QCW Actively stacked array
TH-Q14xx-C
Request information
High temperature stacked array
TH-Q1324-D
Request information
1kW QCW High brightness Stack array
TH-Q1312-AS
TH-Q1410-AS
Request information
TLD : Produits - Power Laser Diodes
Company
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Pdf version
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TH-C1420-S
20W CW LINEAR BAR ARRAY
DESCRIPTION
The TH-C1420-S is a high optical power laser diode source
operating at 20 Watt in CW mode. This linear bar array is ideal
for applications which request high output power like pumping
solid state lasers , illuminators , beacons ,...
The TH-C1420-S structure is multiple emitters spaced on a
monolithic 1cm "bar". The bar is mounted with the active zone (
P-side ) towards a high conductivity submount to minimize the thermal resistance.
The quality of the epitaxial quantum well structure and of the process leads to high electrical
to optical conversion efficiency and reliability.
The compact and rugged package allows easy connection to an efficient heat exchanger. So
the submount temperature can be adjusted to tune the emission wavelength. With this open
package the optical beam can be directly used to achieve efficient coupling.
MAIN FEATURES
20 W CW optical power●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
Quantum well design●
Very high conversion efficiency●
SPECIFICATIONS
Case temperature: 25°C
Thomson LaserDiodes - Product : th-c1420-s
PARAMETERS TH-C1420-S UNITS
CW output power 20 Watt
Emitting area 10 x 0.001 mm x mm
Threshold current 7 Amp.
Operating current 27 Amp.
Operating voltage 1.85 Volt
Total efficiency 42 %
Beam divergence (FWHM) 10 x 35 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/oC●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 3nm●
Spectral width is <= 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1420-S UNITS
CW output power 24 Watt
Reverse voltage 3 Volt
Operating temperature +5 to +35 °C
Storage temperature -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
Request information Back to list Pdf version
Contact us
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Product : th-c1420-s
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TH-C1725-S / TH-C1730-S
CONDUCTIVELY COOLED 25W / 30W CW
LINEAR BAR ARRAY
DESCRIPTION
The TH-C17XX-S products are highly performing 25W CW and
30W CW Laser Diode Bar Arrays. The Laser Diode structure is
multiple emitters spaced on a monolithic 1cm "bar".The bar is
mounted with the active zone (P side) towards a conductively
cooled submount.
The quality of the improved epitaxial quantum well structure and
of the process leads to a strong increase in electrical to optical
conversion efficiency and reliability.
The conductively cooled package has a specific design for efficient thermal management. This
product is an unique solution to implement powerfull solid state laser pumping, illuminators....
MAIN FEATURES
25 W and 30W CW optical power●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
Very high conversion efficiency●
SPECIFICATIONS
Case temperature: 25°C
PARAMETERS TH-C1725-S TH-C1730-S UNITS
CW output power 25 30 Watt
Emitting area 10 x 0.001 10 x 0.001 mm x mm
Threshold current 9 9 Amp.
Thomson LaserDiodes - Product : th-c17xx-s
Operating current 34 39 Amp.
Operating voltage 1.9 1.95 Volt
Total efficiency 39 to 45 41 to 47 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Note: Variation of wavelength is approximately 0.28 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is <= 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-S TH-C1730-S UNITS
CW output power 27 32 Watt
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
Request information Back to list Pdf version
Contact us
Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Product : th-c17xx-s
Request information
Please fulfill attentively the following form to get your informations.
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First Name
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Address
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TH-C5520-S / TH-C5530-S
TH-C5520-P / TH-C5530-P
940nm CW LINEAR BAR ARRAY
DESCRIPTION
The TH-C5520-S and TH-C5530-S products are a highly
performing 20W CW and 30W CW, 940nm Laser Diode Bar
Array assembled on a conductively cooled package. An actively
cooled package is also available ('P' type). The Laser Diode
structure is multiple emitters spaced on a monolithic 1cm
"bar".The bar is mounted with the active zone (P side) towards an
actively cooled submount.
The quality of the epitaxial quantum well structure and of the
process leads to high electrical to optical conversion efficiency
and reliability.
The compact and rugged package allows easy connection to an efficient heat exchanger. So
the submount temperature can be adjusted to tune the emission wavelength. With this open
package the optical beam can be directly used to achieve efficient coupling.
MAIN FEATURES
20W CW to 30 W CW optical power●
915 to 980nm wavelength range●
Highly reproducible MOCVD process●
Conductively cooled package●
High conversion efficiency●
Possibility of actively cooled package 'P' or 'R' type●
SPECIFICATIONS
Thomson LaserDiodes - Product : th-c5530-s
Case temperature: 25°C
PARAMETERS TH-C5520-S TH-C5530-S UNITS
CW output power 20 30 Watt
Emitting area 10 x 0.001 10 x 0.001 mm x mm
Threshold current 8 8 Amp.
Operating current 30 42 Amp.
Operating voltage 1.5 1.6 Volt
Total efficiency 42 45 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Flow rate : 1 l/mn for 'P' package.
Note:
Variation of wavelength is approximately 0.26 to 0.3 nm/oC●
Standard wavelength is 940nm●
Tolerance on wavelength is +/- 5nm●
Spectral width is <= 5nm FWHM●
Other wavelength selections are available in the range of 915nm to 980nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C5520-S TH-C5530-S UNITS
CW output power 22 32 Watt
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 oC
Storage temperature -40 to +85 -40 to +85 oC
Note :Operation at temperature below dew point requests to use dry N2 environment●
COOLING for the 'P' package : Water
Flow : 1 l/mn●
Pressure : 0.5 bar●
Temperature : 25 oC●
Thomson LaserDiodes - Product : th-c5530-s
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Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
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TH-C1420-R(n)
ACTIVELY COOLED 20W CW LINEAR BAR
ARRAY
DESCRIPTION
Series association
TH-C1420-R5 (5 elements)
The TH-C1420-R(n) product is based upon a highly performing
20W CW Laser Diode Bar Array. The Laser Diode structure is
multiple emitters spaced on a monolithic 1cm "bar".The bar is
mounted with the active zone (P-side ) towards an actively
cooled submount.
The quality of the epitaxial quantum well structure and of the
process leads to high electrical to optical conversion efficiency
and reliability.
The actively cooled package has a unique design (*) for easy
association in series from n=2 to 7 TH-C1420-R elements. So, up
to 140W CW are emitted over a line of 9 cm This compact association is an ideal solution to
implement powerful solid state laser pumping, illuminators...
(*) CEA- COGEMA Patent
MAIN FEATURES
20 W CW optical power per element●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
Actively cooled package●
Specific assembly design for high packing density●
SPECIFICATIONS
Fluid temperature: 25°C
Thomson LaserDiodes - Product : th-c1420-r
Flow rate : 1 l/mn.
PARAMETERS TH-C1420-R(n) UNITS
CW output power 20 x n Watt
Emitting area 12 n x 0.001 mm x mm
Threshold current 7 Amp.
Operating current 27 Amp.
Operating voltage 1.85 x n Volt
Total efficiency 42 %
Beam divergence (FWHM) 10 x 35 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 3nm
- Spectral width is < 3nm FWHM
- Other wavelength selections are available in the range of 795nm to 860nm
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1420-R UNITS
CW output power 24 Watt
Reverse voltage 3 Volt
Operating temperature +5 to +35 °C
Storage temperature -40 to +85 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
COOLING : Water
Flow : 0.5 - 1 l/mn●
Pressure : 1 - 4 bar●
Temperature : 25 °C●
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Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
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TH-C1420-P / TH-C1417-PO
ACTIVELY COOLED 20W CW LINEAR BAR
ARRAY(17W CW COLLIMATED)
DESCRIPTION
TH-C1417-PO (collimated)
The TH-C1420-P product is a highly performing 20W CW Laser
Diode Bar Array assembled on a water cooled package. The
Laser Diode structure is multiple emitters spaced on a monolithic
1cm "bar".The bar is mounted with the active zone (P side)
towards an actively cooled submount.
The quality of the epitaxial quantum well structure and of the
process leads to high electrical to optical conversion efficiency
and reliability.
The actively cooled package has a specific design for efficient
thermal management. Fast axis collimation is also proposed,
TH-C1417-PO, with the adjonction of a compact optics. This
product is an unique solution for flexible integrations to
implement powerful solid state laser pumping, illuminators...
MAIN FEATURES
20 W CW optical power●
A collimated beam version●
Actively cooled package●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
SPECIFICATIONS
Thomson LaserDiodes - Product : th-c1420-p
Fluid temperature: 25°C
Flow rate : 1 l/mn.
PARAMETERS TH-C1420-P TH-C1417-PO
collimated UNITS
CW output power 20 17 Watt
Emitting area 10 x 0.001 10 x 0.7 mm x mm
Threshold current 7 7 Amp.
Operating current 27 29 Amp.
Operating voltage 1.85 1.85 Volt
Total efficiency 42 33 %
Beam divergence (FWHM) 10 x 35 10 x 2 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 3nm●
Spectral width is < 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1420-P TH-C1417-PO UNITS
CW output power 24 20 Watt
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
COOLING : Water
Flow : 1 l/mn●
Pressure : 0.5 bar●
Temperature : 25 °C●
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Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
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TH-C1725-R(n) / TH-C1730-R(n)
ACTIVELY COOLED 25W / 30W CW LINEAR BAR
ARRAYS
DESCRIPTION
Series association
TH-C1730-R5
(5 elements)
The TH-C17XX-R(n) products are based upon highly performing
25W CW and 30W CW Laser Diode Bar Arrays. The Laser
Diode structure is multiple emitters spaced on a monolithic 1cm
"bar".The bar is mounted with the active zone (P-side ) towards
an actively cooled submount.
The quality of the improved epitaxial quantum well structure and
of the process leads to a strong increase in electrical to optical
conversion efficiency and reliability.
The actively cooled package has a unique design (*) for easy
association in series from n=2 to 7 TH-C17xx-R elements. So, up
to 175W CW (for TH-C1725-R7 association) or 210W CW (for
TH-C1730-R7 association) are emitted over a line of 9cm This compact association is an ideal
solution to implement powerfull solid state laser pumping, illuminators...
(*) CEA- COGEMA Patent
MAIN FEATURES
25 W CW and 30W CW optical power per element●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
Actively cooled package●
Specific assembly design for high packing density●
SPECIFICATIONS
Fluid temperature: 25°C
Flow rate : 1 l/mn.
Thomson LaserDiodes - Product : th-c17xx-r
PARAMETERS TH-C1725-R(n) TH-C1730-R(n) UNITS
CW output power 25 x n 30 x n Watt
Emitting area 12n x 0.001 12n x 0.001 mm x mm
Threshold current 9 9 Amp.
Operating current 34 39 Amp.
Operating voltage 1.9 x n 1.95 x n Volt
Total efficiency 39 to 45 41 to 47 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Note: Variation of wavelength is approximately 0.28 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is < 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-R(n) TH-C1730-R(n) UNITS
CW output power 27 32 Watt
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
COOLING : Water
Flow : 1 l/mn●
Pressure : 1 - 4 bar●
Temperature : 25 °C●
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Product : th-c17xx-r
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TH-C1725-P / TH-C1730-P
ACTIVELY COOLED 25W / 30W CW LINEAR BAR
ARRAY
DESCRIPTION
The TH-C17XX-P products are highly performing 25W CW and
30W CW Laser Diode Bar Arrays. The Laser Diode structure is
multiple emitters spaced on a monolithic 1cm "bar".The bar is
mounted with the active zone (P side ) towards an actively cooled
submount.
The quality of the improved epitaxial quantum well structure and
of the process leads to a strong increase in electrical to optical
conversion efficiency and reliability.
The actively cooled package has a specific design for efficient
thermal management. This product is an unique solution to
implement powerfull solid state laser pumping, illuminators....
MAIN FEATURES
25 W and 30W CW optical power●
Actively cooled package●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
SPECIFICATIONS
Fluid temperature: 25°C
Flow rate : 1 l/mn.
PARAMETERS TH-C1725-P TH-C1730-P UNITS
CW output power 25 30 Watt
Thomson LaserDiodes - Product : th-c17xx-p
Emitting area 10 x 0.001 10 x 0.001 mm x mm
Threshold current 9 9 Amp.
Operating current 34 39 Amp.
Operating voltage 1.9 1.95 Volt
Total efficiency 39 to 45 41 to 47 %
Beam divergence (FWHM) 10 x 35 10 x 35 degree
Note: Variation of wavelength is approximately 0.28 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is <= 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-P TH-C1730-P UNITS
CW output power 27 32 Watt
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
COOLING : Water
Flow : 1 l/mn●
Pressure : 0.5 bar●
Temperature : 25 °C●
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Thomson LaserDiodes - Product : th-c17xx-p
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
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TH-C1725-PO
25W CW COLLIMATED LINEAR BAR ARRAY
DESCRIPTION
The TH-C1725-PO product is a highly performing 25W CW
Laser Diode Bar Array assembled on a water cooled package.
The Laser Diode structure is multiple emitters spaced on a
monolithic 1cm "bar".The bar is mounted with the active zone (P
side) towards an actively cooled submount.
The quality of the epitaxial quantum well structure and of the
process leads to high electrical to optical conversion efficiency
and reliability.
The actively cooled package has a specific design for efficient
thermal management. Fast axis collimation is achieved with the
adjonction of a compact optics. This product is an unique
solution for flexible integrations to implement powerful solid state laser pumping,
illuminators...
MAIN FEATURES
25 W CW collimated optical power●
Actively cooled package●
Monolithic linear array●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
SPECIFICATIONS
Fluid temperature: 25°C
Thomson LaserDiodes - Product : th-c1725-po
Flow rate : 1 l/mn.
PARAMETERS TH-C1725-PO UNITS
CW output power 25 Watt
Emitting area 10 x 0.7 mm x mm
Threshold current 9 Amp.
Operating current 40 Amp.
Operating voltage 1.95 Volt
Total efficiency 33 %
Beam divergence (FWHM) 10 x 2 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 3nm●
Spectral width is < 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1725-PO UNITS
CW output power 27 Watt
Reverse voltage 3 Volt
Operating temperature +5 to +35 °C
Storage temperature -40 to +85 °C
Note :Operation at temperature below dew point requests to use dry N2 environment●
COOLING : Water
Flow : 1 l/mn●
Pressure : 0.5 bar●
Temperature : 25 °C●
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Information furnished is believed to be accurate and reliable. However THOMSON-CSF Laser Diodes assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
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TH-C1310- F /TH-C1315-F
HIGH POWER FIBER COUPLED LASER DIODES
DESCRIPTION
The TH-C13xx-F series are high optical power fiber coupled laser
diode sources . CW power delivery from 10W to 15W are ideal
for applications which request high brightness sources like for
efficient pumping solid state lasers, illuminators, beacons,...
The optical power is delivered through a fiber bundle terminated
in a SMA connector. The diode bar is actively cooled to control
the emission wavelength.
The diode bar structure use quantum well technology which gives high efficiency and
reliability.
MAIN FEATURES
10W CW and 15W CW optical power●
Optical delivery through SMA connector●
Optical fiber 1m long, 0.2 N.A.●
798 to 820nm wavelength range●
Highly reproducible MOCVD process●
SPECIFICATIONS
Fluid temperature: 20°C
Flow rate: 1 l/mn.
PARAMETERS TH-C1310-F TH-C1315-F UNITS
CW output power 10 15 Watt
Fiber diameter F 900 900 µm
Thomson LaserDiodes - Product : th-c13xx-f
Numerical Aperture 0.2 0.2
Operating current < 30 < 35 Amp.
Operating voltage 2 2.1 Volt
Total efficiency 24 26 %
Note:
- Variation of wavelength is approximately 0.28 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
- Spectral width is < 3nm for TH-C1310-F and < 4nm FWHM for TH-C1315-F
- Other wavelength selections are available in the range of 798nm to 820nm
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-C1310-F TH-C1315-F UNITS
CW output power 11 16 Watt
Reverse voltage 3 3 Volt
Case Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -30 to +80 -30 to +80 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
COOLING : Water
Flow : 0.5 - 1 l/mn●
Pressure : 0.5 bar typical●
Temperature : 20 °C●
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Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
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TH-Q1201-A / TH-Q1301-A / TH-Q1401-A
60W / 80W / 100W QUASI-CW LINEAR BAR
ARRAYS
DESCRIPTION
The TH-Q1X01-A products are a high optical power laser diode
sources for quasi-CW operation. The 'X' index stands for the type
of diode bar: X=2, 3, 4 respectively for 60W, 80W, 100W QCW
peak optical power.
These products are based upon MOCVD quantum well design to
realize highly efficient 1cm linear bar arrays.The quality of the
process of these GaAlAs laser diodes leads to longer lifetime and
improved reliability.
Assembly in a compact and rugged package allows easy connection to a heat exchanger to get
good temperature control.
MAIN FEATURES
60W / 80W / 100W peak optical power●
Standard QCW operation (200µs/100Hz)●
12mJ / 16mJ / 20 mJ energy per pulse●
795 to 860nm wavelength range●
High conversion efficiency●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Case temperature: 25° C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
PARAMETERS TH-Q1201-A TH-Q1301-A TH-Q1401-A UNITS
QCW output power 60 80 100 Watt
Thomson LaserDiodes - Product : th-q1x01-a
Energy per pulse 12 16 20 mJ
Emitting area 10 x 0.001 10 x 0.001 10 x 0.001 mm x mm
Threshold current 17 20 22 Amp.
Operating current 76 100 120 Amp.
Operating voltage 1.9 2 2.1 Volt
Total efficiency 40 to 46 40 to 46 40 to 46 %
Beam divergence (FWHM) 10 x 40 10 x 40 10 x 40 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is < 3nm FWHM●
Other wavelength selections are available in the range of 795nm to 860nm●
TH-Q1201-A can operate at higher duty cycle, up to 1kHz for 60W QCW.●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1201-A TH-Q1301-A TH-Q1401-A UNITS
QCW output power 65 85 105 Watt
Reverse voltage 3 3 3 Volt
Operating temperature +5 to +50 +5 to +50 +5 to +50 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 °C
Note: Operation at temperature below dew point requests to use dry N2 environment●
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Product : th-q1x01-a
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TH-Q1206-A / TH-Q1306-A / TH-Q1406-A
360W / 480W / 600W QUASI-CW STACKED
ARRAYS
DESCRIPTION
TH-Q1X06-A are high optical power laser diode sources.
These products are based upon 6 highly efficient 1cm linear bar
arrays which are piled up to form a stack operating in Quasi-CW
mode. 'X' value in TH-Q1X06-A stands for the type of diode bars
which are assembled. For X= 2, 3, 4 respectively, peak optical
power are 360W, 480W, 600W with power density from 1.8 to
3kW/cm2.
The quality of the process of these GaAlAs laser diodes leads to
longer lifetime and improved reliability. So the TH-Q1X06-A stacked arrays are ideal for
different applications : pumping solid state lasers, illuminators,...
Assembly in a compact and rugged package allows easy connection to a heat exchanger to get
good temperature control.
MAIN FEATURES
360W / 480W / 600W peak optical power●
Standard QCW operation (200µs/100Hz)●
72mJ / 96mJ / 120 mJ energy per pulse●
795 to 860nm wavelength range●
High conversion efficiency●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Case temperature: 25° C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
Thomson LaserDiodes - Product : th-q1x06-a
PARAMETERS TH-Q1206-A TH-Q1306-A TH-Q1406-A UNITS
QCW output power 360 480 600 Watt
Energy per pulse 72 96 120 mJ
Emitting area 10 x 2 10 x 2 10 x 2 mm x mm
Threshold current 17 20 22 Amp.
Operating current 76 100 120 Amp.
Operating voltage 11.5 12 12.5 Volt
Total efficiency 40 to 46 40 to 46 40 to 46 %
Beam divergence (FWHM) 10 x 40 10 x 40 10 x 40 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is < 3nm FWHM ( < 4nm for TH-Q1406-A model)●
Other wavelength selections are available in the range of 795nm to 860nm●
Specifications are for nominal lifetime 109 pulses (for 200µs pulse width)●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1206-A TH-Q1306-A TH-Q1406-A UNITS
QCW output power 370 490 610 Watt
Reverse voltage 3 3 3 Volt
Operating temperature +5 to +50 +5 to +50 +5 to +50 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 °C
Note:Operation at temperature below dew point requests to use dry N2 environment●
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Specifications mentioned in this document are subject to change without notice.
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TH-Q1210-B / TH-Q1310-B / TH-Q1410-B
600W / 800W / 1000W QUASI-CW STACKED
ARRAYS
DESCRIPTION
TH-Q1X10-B are high optical power laser diode sources.
These Products are based upon 10 highly efficient 1cm linear bar
arrays which are piled up to form a stack operating in Quasi-CW
mode. 'X' value in TH-Q1X10-B stands for the type of diode bars
which are assembled. For X=2, 3, 4 respectively, peak optical
power are 600W, 800W, 1000W with power density from 1.7 to
2.8kW/cm2.
The quality of the process of these GaAlAs laser diodes leads to
longer lifetime and improved reliability. So the TH-Q1X10-B
stacked arrays are ideal for different applications : pumping solid state lasers, illuminators,...
Assembly in a compact and rugged package allows easy connection to a heat exchanger to get
good temperature control.
MAIN FEATURES
600W / 800W / 1000W peak optical power●
Standard QCW operation (200µs/100Hz)●
120mJ / 160mJ / 200 mJ energy per pulse●
795 to 860nm wavelength range●
High conversion efficiency●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Case temperature: 25° C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
Thomson LaserDiodes - Product : th-q1x10-b
PARAMETERS TH-Q1210-B TH-Q1310-B TH-Q1410-B UNITS
QCW output power 600 800 1000 Watt
Energy per pulse 120 160 200 mJ
Emitting area 10 x 3.6 10 x 3.6 10 x 3.6 mm x mm
Threshold current 17 20 22 Amp.
Operating current 76 100 120 Amp.
Operating voltage 19 20 21 Volt
Total efficiency 40 to 46 40 to 46 40 to 46 %
Beam divergence (FWHM) 10 x 40 10 x 40 10 x 40 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )●
Spectral width is < 3nm FWHM ( < 4nm for TH-Q1410-B model)●
Other wavelength selections are available in the range of 795nm to 860nm●
Specifications are for nominal lifetime 109 pulses (for 200µs pulse width)●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1210-B TH-Q1310-B TH-Q1410-B UNITS
QCW output power 630 840 1050 Watt
Reverse voltage 3 3 3 Volt
Operating temperature +5 to +50 +5 to +50 +5 to +50 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 °C
Note:Operation at temperature below dew point requests to use dry N2 environment●
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Thomson LaserDiodes - Product : th-q1x10-b
Specifications mentioned in this document are subject to change without notice.
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TH-Q12xx-C / TH-Q13xx-C
300W to 1.5kW QUASI-CW
STACKED ARRAYS
DESCRIPTION
The TH-Q12xx-C and TH-Q13xx-C series are high optical power
laser diodes stacks assembled on a liquid cooled heatsink.
These stacks are based upon highly efficient 1cm linear bar
arrays. According to the number of assembled bars "xx" , a large
range of optical power are available from 300W QCW to 2kW
QCW.
Low thermal impedance liquid cooled package allows easy
control of the central wavelength. So the TH-Q12xx-C and
TH-Q13xx-C stacks are ideal for different applications : pumping rod or slab solid state lasers,
illuminators...
Assembly in a compact and rugged package allows easy connection.
MAIN FEATURES
300W to 2000W peak optical power●
Standard QCW operation (200µs/100Hz)●
Up to 400 mJ energy per pulse●
795 to 860nm wavelength range●
Liquid cooled package●
High conversion efficiency●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Fluid temperature: 25°C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
Thomson LaserDiodes - Product : th-q12xx-c
Products are designed with 5 to 25 linear bar arrays.
Characteristics presented in the following table are respectively for 10 bars( TH-Q1210-C or
TH-Q1310-C ) and for 25 bars( TH-Q1225-C or TH-Q1325-C ).
PARAMETERS TH-Q1210-C TH-Q1225-C TH-Q1310-C TH-Q1325-C UNITS
QCW output power 600 1500 800 2000 Watt
Energy per pulse 120 300 160 600 mJ
Emitting area 10 x 3.6 10 x 9.6 10 x 3.6 10 x 9.6 mm x mm
Threshold current 17 17 20 20 Amp.
Operating current 76 76 100 100 Amp.
Operating voltage 19 48 20 50 Volt
Total efficiency 40 to 46 440 to 46 40 to 46 40 to 46 %
Beam divergence 10 x 40 10 x 40 10 x 40 10 x 40 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
- Spectral width is < 4nm FWHM ( < 3nm on request )
- Other wavelength selections are available in the range of 795nm to 860nm
- Specifications are for nominal lifetime 109 pulses ( for 200µs pulse width )
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1210-C TH-Q1225-C TH-Q1310-C TH-Q1325-C UNITS
QCW output power 630 1570 840 2100 Watt
Pulse width 400 400 300 300 µs
Reverse voltage 3 3 3 3 Volt
Operating temperature +5 to +35 +5 to +35 +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 -40 to +85 -40 to +85 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
COOLING : Water
Flow : 0.5 - 1 l/mn●
Pressure : 1 - 3 bar●
Temperature : 25 °C●
Thomson LaserDiodes - Product : th-q12xx-c
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Specifications mentioned in this document are subject to change without notice.
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PRELIMINARY DATA TH-Q14xx-C
500W to 2.5kW QUASI-CW STACKED ARRAYS
DESCRIPTION
The TH-Q14xx-C series are high optical power laser diodes stacks
assembled on a liquid cooled heatsink.
These stacks are based upon highly efficient 1cm linear bar
arrays. According to the number of assembled bars "xx" , a large
range of optical power are available from 500W QCW to 2.5kW
QCW.
Low thermal impedance liquid cooled package allows easy
control of the central wavelength. So the TH-Q14xx-C stacks are
ideal for different applications : pumping rod or slab solid state lasers, illuminators...
Assembly in a compact and rugged package allows easy connection.
MAIN FEATURES
500W to 2500W peak optical power●
Standard QCW operation (200µs/100Hz)●
Up to 500 mJ energy per pulse●
795 to 860nm wavelength range●
Liquid cooled package●
High conversion efficiency●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Fluid temperature: 25°C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
Thomson LaserDiodes - Product : th-q14xx-c
Products are designed with 5 to 25 linear bar arrays.
Characteristics presented in the following table are respectively for 10 bars( TH-Q1410-C)
and for 25 bars( TH-Q1425-C).
PARAMETERS TH-Q1410-C TH-Q1425-C UNITS
QCW output power 1000 2500 Watt
Energy per pulse 200 500 mJ
Emitting area 10 x 3.6 10 x 9.6 mm x mm
Threshold current 22 22 Amp.
Operating current 120 120 Amp.
Operating voltage 21 52 Volt
Total efficiency 39 to 44 39 to 44 %
Beam divergence (FWHM) 10 x 40 10 x 40 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 4nm ( +/- 3nm on request )
- Spectral width is < 4nm FWHM ( < 3nm on request )
- Other wavelength selections are available in the range of 795nm to 860nm
- Specifications are for nominal lifetime 109 pulses ( for 200µs pulse width )
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1210-C TH-Q1225-C UNITS
QCW output power 1050 2600 Watt
Pulse width 300 300 µs
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to +85 °C
Note :
- Operation at temperature below dew point requests to use dry N2 environment
COOLING : Water
Flow : 0.5 - 1 l/mn●
Pressure : 1 - 3 bar●
Temperature : 25 °C●
Thomson LaserDiodes - Product : th-q14xx-c
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Specifications mentioned in this document are subject to change without notice.
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TH-Q1324-D
HIGH TEMPERATURE 1300W QCW STACKED
ARRAYS
DESCRIPTION
TH-Q1324-D is an actively cooled laser diode stack specifically
designed to operate at very high temperature.
Laser diode bar array benefit of fully mastered MOCVD quantum
well technology. Appropriate design of epitaxial layers has been
developed for improved efficiency and reliable operation at very
high junction temperature operation.
Packaging and heat exchanger have been optimized to reduce the
overall thermal resistance. TH-Q1324-D stacks are ideal for
different applications under severe environmental conditions: pumping rods or slabs solid
state lasers, illuminators...
Assembly in a compact and rugged package allows easy connection.
MAIN FEATURES
1300W peak optical power●
QCW operation (200µs/100Hz)●
Over 60°C operating fluid temperature●
Up to 260 mJ energy per pulse●
Low thermal resistance assembly●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
SPECIFICATIONS
Fluid temperature: 60° C
Quasi-continuous mode: pulse width = 200µs repetition = 100Hz
Product is designed with 24 linear bar arrays
Thomson LaserDiodes - Product : th-q1324-d
PARAMETERS TH-Q1324-D UNITS
QCW output power 1300 Watt
Energy per pulse 260 mJ
Emitting area 10 x 9.4 mm x mm
Threshold current 25 Amp.
Operating current 90 Amp.
Operating voltage 45 Volt
Total efficiency 31 to 36 %
Beam divergence (FWHM) 12 x 40 degree
Note: Variation of wavelength is approximately 0.26 to 0.3 nm/°C●
Standard wavelength is 808nm●
Tolerance on wavelength is +/- 4nm●
Spectral width is < 4nm FWHM●
Other wavelength selections are available in the range of 795nm to 820nm●
Specifications are for nominal lifetime 108 pulses (for 200µs pulse width)●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1324-D UNITS
QCW output power 1400 Watt
Pulse width 250 µs
Maximum duty cycle 3 %
Reverse voltage 3 Volt
Operating fluid temperature +20 to +70 °C
Storage temperature -40 to +85 °C
Note:Operation at temperature below dew point requests to use dry N2 environment●
COOLING : Water
Flow : 0.5 -1 l/mn●
Pressure : 1 - 3 bar●
Temperature : 20 - 60 °C●
Thomson LaserDiodes - Product : th-q1324-d
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Specifications mentioned in this document are subject to change without notice.
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TH-Q1312-AS / TH-Q1410-AS
1 kW QUASI-CW HIGH BRIGHTNESS STACKED
ARRAY
DESCRIPTION
TH-Q1312-AS and TH-Q1410-AS are high brightness optical
power laser diode sources.
These products are based upon high packing density of efficient
1cm linear bar arrays which leads to 9 to 10 kW/cm2 of optical
power density in Quasi-CW mode. The quality of the process of
these GaAlAs laser diodes allows longer lifetime and improved
reliability.
These 'High Brightness' stacked arrays can be also easily
associated with optical concentrator. So, products with optical
power density of 40 kW/cm2 can be proposed. Such a source is ideal to design solid state
lasers with optimized pumping efficiency.
Assembly in a compact and rugged package allows easy connection to a heat exchanger for a
good temperature control.
MAIN FEATURES
1000 W peak optical power●
QCW operation ( typical 150µs/25Hz)●
Up to 150mJ energy per pulse●
795 to 860nm wavelength range●
Highly reproducible MOCVD process●
GaAlAs quantum well design●
Possibility to design over 40kW/cm2 optical source●
SPECIFICATIONS
Thomson LaserDiodes - Product : th-q1312-1410as
Case temperature: 25°C
Quasi-continuous mode: pulse width = 150µs repetition = 20Hz
PARAMETERS TH-Q1312-AS TH-Q1410-AS UNITS
QCW output power 1000 1000 Watt
Energy per pulse 150 150 mJ
Emitting area 9.6 x 1.1 9.6 x 0.9 mm x mm
Threshold current 20 22 Amp.
Operating current 100 120 Amp.
Operating voltage 24 21 Volt
Total efficiency 39 to 44 38 to 43 %
Beam divergence 10 x 40 10 x 40 degree
Note:
- Variation of wavelength is approximately 0.26 to 0.3 nm/°C
- Standard wavelength is 808nm
- Tolerance on wavelength is +/- 3nm
- Spectral width is < 6nm for TH-Q1312-AS and < 7 nm for TH-Q1410-AS
- Other wavelength selections are available in the range of 795nm to 860nm
- Specifications are for nominal life time 109 pulses ( for 150µs pulse width )
ABSOLUTE MAXIMUM RATINGS
PARAMETERS TH-Q1312-AS TH-1410-AS UNITS
QCW output power 1100 1100 Watt
Pulse width 500 400 µs
Duty cycle 0.5 0.4 %
Reverse voltage 3 3 Volt
Operating temperature +5 to +35 +5 to +35 °C
Storage temperature -40 to +85 -40 to + 85 °C
Note:
- Operation at temperature below dew point requests to use dry N2 environment.
NOTES:
- Anode and cathode can be inverted on request
- The two electrical pads have to be isolated from heatsink
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Laser Diodes
Principle
Laser Spectroscopy is a tool to accurately measure narrow absorption lines in the near-infrared
spectral region (1.30µm - 1.8µm). Gas molecules absorb energy at specific wavelength, providing a
unique print for that species. This process is highly selective such that slighly away from the
absorption lines their is no absorption. By tuning the laser's beam wavelength to the desired gas
absorption line and by precise measurement of the absorption level of that beam it is possible to
determine the concentration of the gas. Resolution of the measurement is generally expressed in
ppm.
Product specification : SE 635
Applications
Production line quality control (e.g. H2O monitoring in pyrotechnic, pharmaceutical,
semiconductor and food industries)
●
Gas-waste monitoring at the points of discharge in the environment●
In-situ control of combustion process●
sensor for atmospheric trace gas analysis●
Other applications include:
Dust monitoring,❍
Medical,...❍
●
Gases of particular interest
Gases Species Wavelength (nm)
H2F1330
H2O1365
HB21341
NH31544
H2S1578
CO 1567
CO21573
TLD : Products - Laser Diodes
CH41651
HCl 1747
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SE 635
DFB LASER DIODE MODULE
Wavelength selection
DESCRIPTION
The SE635 DFB is a family of Laser Diode module in a 14 pin package.
SE 635 contains a DFB chip assembled on a TEC-cooler with a
monitoring PIN photodiode and coupled into a single mode fiber.
This coupling is made through a tilted fiber to limit the feedback
reflections into the DFB.
DFB Laser Diodes are tuned to the specific wavelength
corresponding to the Gas of particular interest.
Accurate single mode fiber optical coupling allows stable optical
output power. An Optical Isolator can be inserted for highly sensitive detection.
Full MOCVD process for the laser diode and a strong package expertise gives highly reliable
laser diode modules.
MAIN FEATURES
Single mode fiber coupled devices●
Over 1mW CW optical power●
1.3µm to 1.8µm wavelength coverage●
Accurate wavelength selection ( ± 2nm)●
PIN photodiode for monitoring●
Optical isolator (option)●
Highly reliable MOCVD process●
SPECIFICATIONS
Temperature: 25°C
Thomson LaserDiodes - Product : se 635
PARAMETERS Min. Typ. Max. UNITS
Thermistor (@ 25°C) 10 k
Thermistor coefficient 4 % / °C
TE Cooler :
-current
- voltage 1
2A
V
Average optical power 0.5 mW
Slope efficiency (@ 500µW) 9 15 µW / mA
Threshold current 20 30 40 mA
Forward voltage 1.2 1.5 V
Serial resistance 3 10 Ohm
Wavelength on request nm
Spectral width (-3dB) 0.4 nm
Side mode suppression 30 dB
Temperature drift 1 A° / °C
Current drift 0.1 A° / mA
Monitoring photocurrent 450 µA
Monitoring frequency response (R1=50 ) 100 MHz
Relative Intensity Noise (optical reflection < 25 dB) -120 dB / Hz
Note: More standard wavelengths: 1512nm, 1564nm, 1600nm, 1740nm●
Other wavelengths can be realized on request●
Standard wavelength accuracy is +/- 2nm●
Optical isolator can be inserted on request●
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Typ. Max. UNITS
Case Temperature range -20 +60 °C
Storage Temperature -40 +85 °C
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Specifications mentioned in this document are subject to change without notice.
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Optoelectronic functions
To illustrate TLD expertise, the following table gives few types of Transmitters and Receivers in
catalogue.
TRANSMITTERS
High frequency Laser Diode Module - compact package / high
temperature range -
HFLM 3306
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622 Mb/s Digital Transmitter Module
TX20622
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High frequency Laser Transmitter
HFLT
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RECEIVERS
Analog Receiver module - 10 MHz to 1 GHz
ARM 31000
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Digital Receiver modules
RX 20622
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HFLM 3306
High Frequency Laser Diode Module
DESCRIPTION
The HFLM 3306 product is a compact package, High Frequency
Laser Diode Module. Basic component is a low threshold
GaInAsP/InP BH laser diode made by Low pressure Metal
Organic Chemical Vapor Deposition process, optimized to
operate at high temperature. Coupled optical power into single
mode fiber is monitored by a InGaAs photodiode and a thermistor
controls the temperature.
Assembly is based upon hybrid technology design to ensure a 50
Ohm input impedance and to optimize bias circuit. Highly
efficient coupling into a single mode fiber gives more than 1 mW of modulated optical power.
The ceramic substrate and the package have been specifically designed to reduce overall
volume (< 0.5cm3). All the technologies, as YAG welding for fiber fixing, have been qualified
for a wide temperature range operation.
MAIN FEATURES
High frequency modulation capability (> 10GHz)●
50 input●
Low threshold current GaInAsP BH diode structure●
Highly coupled optical power●
Stability of fiber coupling●
Compact package●
Qualified for a large storage temperature range: -65oC to +150oC●
SPECIFICATIONS
Temperature: + 25oC
Thomson LaserDiodes - Product : hflm 3306
PARAMETERS Min. Typ. Max. UNITS
Optical output power 1 mW
Wavelength range 1280 1330 nm
Spectral width RMS ( ) 2.5 nm
Input impedance 50
Input VSWR 2.2
Bandwidth (± 3dB) 10 GHz
Output modulation ratio 0.04 mW/mA
Signal to noise ratio (m=1) 120 135 dB/Hz
3nd order intermodulation (m1 = m2 = 0.3) -45 dBc
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
RF input power 100 mW
Operating case Temperature range -40 +85 oC
Storage Temperature -65 +150 oC
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Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
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TX 20622
622 Mb/s Digital Transmitter Module
DESCRIPTION
The TX20622 product is a high performance, cost effective
module for serial data communication applications specified for a
data rate up to 622 Mb/s.
This Transmitter integrates a 1300nm Fabry Perot laser diode
optically coupled into a single mode fiber. The output power is
controlled through a specific circuit via a monitor photodiode.
The electronic circuit provides two controls which maintain
constant the output optical power level both for a digital 'one' and a digital 'zero' on the input.
These two loops compensate effects due to thermal variations on the laser diode
characteristics. So, the transmitter circuit can operate from -40°C to +85°C.
When there is no input digital stream, the loop is blocked to protect the laser for the case of
appearance of a new signal. An alarm is provided in that case.
Another alarm is provided when current into the laser goes up to 150% of the initial value.
A digital interface, between digital inputs and laser driver circuit, controls the peak to peak
voltage to the laser modulator input. So, variations can be accepted on the digital input levels.
MAIN FEATURES : APPLICATIONS
SONET OC-12 / SDH STM 4 Equipment Interconnect and ATM applications●
Data link●
Fiber in the loop●
SPECIFICATIONS
Operating Case Temperature: - 40°C to + 85°C
Thomson LaserDiodes - Product : tx 20622
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1260 1310 1340 nm
Spectral width (rms) 4 7 nm
Average optical power (*) -12 - 10 - 8 dBm
Optical power stability (-40°C to +85°C) ± 1.5 dB
Extinction ratio 8 12 17 dB
Bit rate ( 223 - 1 PRBS NRZ) 20 622 Mb/s
Data inputs ECL 10K compatible
Alarm on (Laser current limitation) +4 V
Alarm off (Laser current limitation) 1 V
No input signal alarm on +4 V
No input signal alarm off 1 V
Thermistor at +25°C 10 k
Thermistor coefficient 4 % / °C
Positive supply voltage + 4.75 + 5 + 5.25 V
Positive supply current (**) 60 80 mA
Negative supply voltage - 4.75 - 5 - 5.25 V
Negative supply current (**) 150 250 mA
DC power consumption(**) 1 1.7 W
(*) measured at point S in accordance with CCITT G. 957
(**) Depending on the case temperature
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
Positive supply voltage + 6 V
Negative supply voltage - 6 V
Fiber bending radius 40 mm
Operating Case Temperature range -40 +85 °C
Storage Temperature -40 +85 °C
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Product : tx 20622
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HFLT xxxx
High Frequency Laser Transmitter
DESCRIPTION
The HFLTxxxx products are High Frequency Laser Transmitters
built to control DIL laser diode modules.
Electronic circuit ensures both the Laser Diode temperature
stabilization (+25°C in standard) and the regulation of the average
output optical power.
HFLTxxxx transmitters are easy to use units which require no
adjustments from the user. These Transmitters are biased by an
external DC power supply(+/-5V). An RF modulation signal can be applied to the laser diode
through a SMA connector.
The DC power supply is made through a standard 9 pin Sub-D connector. This connector also
provides analog information from the Laser Module: laser current, monitoring photodiode
current, temperature error and Peltier current.
These Transmitters can be associated with TLD Receiver counterparts which is an easy way to
realize broad-band analog fiber link.
MAIN FEATURES
Analog signal fiber transmission●
Different wavelength available●
Single mode or multimode fiber possibilities●
Low noise●
Stabilized optical power●
Temperature stabilization●
High reliability●
SPECIFICATIONS
Thomson LaserDiodes - Product : hflt
Temperature: + 25°C
PARAMETERS Min. Typ. Max. UNITS
Optical characteristics:
- Wavelength
HFLT 1300
HFLT 1550
- Optical output power
- Spectral width (rms)
- Relative Intensity Noise
1280
1500
1
1300
1550
1.5
2
-135
1340
1600
2
-130
nm
nm
mW
nm
dB/Hz
Input impedance
-Input VSWR 2 3
Modulation efficiency:
- Electrical to Optical conversion 0.02 0.04 W/A
DC power suppply ± 4.5 ± 5 ± 5.5 V
RF characteristics:
- Modulation bandwith (-3dB)
HFLT 1300
HFLT 1303
- Ripple over -3dB bandwidth
- Low cut off frequency
1
3
100
± 1
GHz
GHz
dB
kHz
Monitoring outputs
- Laser current
- Monitoring photodiode
- Peltier current
- Temperature error
(reference +25°C = 10k )
1
1
1
1.25
mV/mA
mV/mA
mV/mA
mV/
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
RF input power 20 dBm
Power supply ± 4 ± 8 V
Operating case Temperature range -20 +65 °C
Storage Temperature -40 +80 °C
Thomson LaserDiodes - Product : hflt
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Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Product : hflt
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ARM 31000
Analog receiver Module 30 - 1000 MHz
DESCRIPTION
The ARM 31000 [Analog Receiver Module 1000 MHz
bandwidth] module contains a III-V PIN photodiode and a linear
electronic circuit . The basic design is based upon a
transimpedance preamplifier circuit. The module is built on a
thick film alumina substrate to achieve a bandwidth up to 1 GHz.
The pigtail is designed with a tilted single fiber to keep the optical
reflection level lower than -45 dB.
The ARM 31000 is mounted in a standard 16 pin DIP package.
The receiver has a very low distorsion level as requested for high quality AM analog
transmission with a very good carrier to noise ratio.
The module is supplied with a +5V (200mA) for the preamplifier and a +12V to feed the PIN
photodiode (1mA typical). So, the whole power consumption is lower than 1.2W.
MAIN FEATURES
Large bandwidth: 30 to 1000MHz●
Very low intermodulation product●
High carrier to noise ratio●
1µm to 1.55µm wavelength coverage●
Single mode fiber with low back reflection●
Efficient CATV receiver●
Adapted for Sub Carrier Multiplex transmission●
SPECIFICATIONS
Temperature: + 25oC
Thomson LaserDiodes - Product : arm 31000
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1000 1600 nm
Photodiode responsivity 0.9 0.95 A / W
Optical return loss -60 - 50 - 45 dB
Bandwidth (-3 dB) 1000 1200 1350 MHz
Bandwidth flatness (50 to 860 MHz) ± 0.5 ± 1 dB
Dynamic ripple (in 8MHz bandwidth) ± 0.25 dB
Noise Equivalent Power 5 6 6.5 pA / Hz
Transimpedance value at 800MHz 400
Output VSWR
Rload = 75 (50 - 860 MHz) 12 15 dB
Carrier to noise ratio (C/N) (*)
( BW = 5MHz, m= 4%, Popt =0 dBm) 55 dB
Second Order Intermodulation product (*) - 70 dBc
Third Order Intermodulation product (*) - 75 dBc
Current supply @ + 5V 200 230 mA
Output power level per carrier 97 102 dB µV
(*) 2tone test conditions m1 = m2 = 35% (each laser is modulated with a modulation index of
70%)
Input optical power = 0 dBm
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
Photodiode bias voltage + 15 V
Preamplifier supply voltage + 8 V
Input Optical Power + 5 dBm
Operating Temperature range -40 +85 oC
Storage Temperature -40 +85 oC
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Thomson LaserDiodes - Product : arm 31000
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Product : arm 31000
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RX 20622
Receiver Module
DESCRIPTION
The RX20622 is a highly performing receiver module. It is
designed for serial data communication applications respectively
specified for a signal rate at 155 Mb/s and 622 Mb/s.
This module is well suited for single mode links in at wavelengths
of 1300nm and 1550nm. It integrates the detector, the amplifier
circuit, the clock recovery and the decision circuit.
The module can detect data rates both at 155 Mb/s and 622 Mb/s just by changing a TTL
level. All electronic functions are realized on thick alumina substrate.
MAIN FEATURES
155 Mb/s and 622 Mb/s receiver●
Low noise preamplifier-amplifier circuit●
Clock recovery operating for both bit rates●
Decision and alarm circuits●
1.3µm to 1.6µm wavelength coverage●
Single mode fiber●
SPECIFICATIONS
Temperature: + 25°C
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1260 1310 1560 nm
Thomson LaserDiodes - Product : rx 20622
Sensitivity (BER 10-9)
@ 155.52 Mb/s
@ 622.08 Mb/s -37
-33 -36
-32 dBm
dBm
Overload -7 -6 dBm
Low Optical alarm on Yes
HighOptical alarm on Yes
Power Supply Voltage
- Negative
- Positive - 4.75
+ 4.75 -5
+ 5 -5.25
+ 5.25 V
V
Power Supply Current (*)
- Negative
- Positive 300
150 mA
mA
DC power consumption 2.2 W
(*) measured at S point in accordance with CCITT G.957
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Max. UNITS
Operating temperating range -30 + 70 °C
Storage temperature - 40 + 85 °C
Positive supply voltage + 6 V
Negative supply voltage - 6 V
Minimum fiber bending radius 40 mm
Storage Temperature -40 +85 °C
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Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Product : rx 20622
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DR 22488
High bit rate Receiver module (2.5 Gb/s)
DESCRIPTION
The DR 22488 module is a low cost 2.488 Gb/s receiver for long
wavelengths 1300nm and 1550nm. This receiver is based upon a
high speed photoreceiver design, using a III-V PIN photodiode
and silicon MMIC's.
The structure of the preamplifier circuit is of transimpedance type.
The module is built on a thick film alumina substrate to achieve a
bandwidth over 2 GHz.
The receiver package is an industrial 14 Pin low profile DIP pigtailed package. The standard
fiber pigtail is a 50/125 multimode one. However single mode pigtailing with low back
reflection (lower than -45dB) can be delivered on request.
MAIN FEATURES
High bit rate receiver●
Low cost design●
1.3µm to 1.55µm wavelength coverage●
Multimode pigtail●
Low back reflection single mode pigtail possibility●
SPECIFICATIONS
Temperature: + 25°C
PARAMETERS Min. Typ. Max. UNITS
Wavelength 1300 1600 nm
Photodiode responsivity 0.95 A / W
Thomson LaserDiodes - Product : dr 22488
Bandwith (-3 dB) 2000 MHz
Low cut-off frequency(-3db) 4 MHz
Noise Equivalent Power 9 11 13 pA / Hz
Effective transimpedance value 1500 1700 2100
Sensitivity ( STM16 BER measurement) -25 dBm
Overload (for a BER 10-9) -3 dBm
Dynamic range 22 dB
Output impedance 50
Output VSWR -12 dB
Power consumption (+12V) 50 mA
ABSOLUTE MAXIMUM RATINGS
PARAMETERS Min. Typ. Max. UNITS
Photodiode bias voltage + 15 V
Voltage supply + 15 V
Case Temperature range -40 +85 oC
Storage Temperature -40 +85 oC
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Specifications mentioned in this document are subject to change without notice.
Copyright ©1998 THOMSON-CSF Laser Diodes /
Thomson LaserDiodes - Product : dr 22488
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References
As an exemple of Space Application, the following presentation has been given at OE'Lase
Conference , San Jose, January 1998
VERY HIGH SPEED OPTOELECTRONIC FUNCTIONS FOR HIGH DATA RATE
COMMUNICATIONS BETWEEN SATELLITE
Georges Folcke, Jean Marc Defrancq and Dominique Geffroy
Thomson CSF Laser Diodes (Orsay) france
Bernard Roy
Matra Marconi Space (Toulouse) France
Performance requirements & systems aspects
on 830 nm wavelength
WDM technics (4 )❍
●
using very high power laser modules
240 mWatts launched into single mode fiber❍
●
using Silicon Avalanche Photodiode
very high gain value (> 300)❍ very low excess noise factor x : close to 0.2❍
●
very high bit rate : 622 Mbs per channel(155 Mbs or 622 Mbs)● based End to End attenuation 71 dB●
4 included into a common communication box 1.5 liter ; 1.5 kg●
Laser Diode characteristics
High speed package (butterfly type) with :
fiber grating pigtail❍ bandwidth higher than 1 GHz at - 3 dB❍ high speed monitoring photodiode❍
●
TLD : References - 1
No TE-cooler❍ Popt > 200 mW CW❍ very low optical power threshold❍
more than one supplier is available today
Silicon Avalanche Photodiode
Very high sensitivity fiber pigtail devices
active area diameter of 100 mm❍
> 0.56 A/W❍ bandwidth higher than 1 GHz❍ very low parasitic capacitance 0.3 pF❍ very high gain more than 300 for VAPD in the range of 350 Volts❍ delivered on specific alumina substrate able to be integrated into "standard 14
pin DIP package"
❍
very low dark current at high gain value 25 nA max❍
●
more than one supplier is available today
Laser Driver Structure
Speed as high as possible 622 Mbs● Final design structure
first stage based on voltage amplifier❍ following by a current convertor❍ using power GaAs FET stage to drive the
laser diode
❍
the laser diode is connected to the GaAs
FET Drain giving the maximum
achievable bandwidth
❍
on the PIN monitoring photodiode peak
to peak detection to generated two error
signals
❍
●
peak level used to control the optical "one"
levels
●
low level used to control the "zero" levels●
Power consumption as low as possible
Main Transmitter Characteristics achieved
bandwidth is good enough to perform the goal of 622 Mbs bit rate● able to drive laser diode with 600 mA pp● electrical power consomption limited to :
2.2 W with 300 mA pp❍ 3.2 W with 600 mA pp❍
●
TLD : References - 1
extinction ratio lower than 2%
Receiver Structure
Pre-amplifier based on transimpedance design
very good reproductibility in production❍ very stable design in temperature❍ dynamic range big enough in this application❍
●
Theoretical simulation approach made using standard model and presented below●
Integrated into a 14 pin DIP low profile package
Theoretical Approach
Simulation results with :
Transimpedance value 4.3 k
Idark 25 nA
x 0.2
0.56 A/W
a (PminPmax) 2 %
Mopt 110 to 160
Receiver Implementation
APD-FET pre-amplifier circuit Hybrid module 1● Post amplifier (30 dB gain)● Switches and filters● Limiter amplifier Hybrid module 2● Clock recovery and decision circuit● Peak detector and AGC
High voltage DC/DC converter On PCB
●
Sensitivity measurement results
TLD : References - 1
622 Mbs (m=4.6%)
155Mbs (m=4.6%)
Main Receiver Characteristics
Complete receiver is working at 155 Mbs and 622 Mbs by external selection●
TLD : References - 1
Power consumption is limited to 2.5 Watts (in +/- 5 volts)● Hybrid size in thin film technology is around 1" x 2"● Dynamic range 25 dB●
Output impedance 50 ●
Single initial adjustement : AGC point (function of the APD chip)
Further activities
Hybrid are under finalization on both functions● The pre-amplifier is already achieved● Receiver Sensitivity will be improved at least by 1 or 2 dB● Double sources aspect are under evaluation today
one source is finalized, the other one is under qualification❍
●
one receiver source is finalized, two other ones are under evaluation
TLD : References - 1
Company
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Specific Optoelectronic Functions
Thomson-CSF Laser Diodes will design and develop specific electronic functions
with Laser diodes modules and photoreceivers to realize customized Transmitters
and Receivers for your application.
TLD expertise in Optoelectronic functions :
TLD has over 15 years of experience in design, development, characterization and
qualification of advanced optoelectronic fonctions. This expertise covers a wide
range of performances:
Wide bandwidth circuit design: from DC to several GHz●
High speed O/E functions: 2488 Mb/s and over●
Analog Receivers Low Intermodulation products, CSO, CTB●
Very high modulation current: up to 600 mA at 622 Mb/s●
Highly sensitive receiver:
-47 dBm at 622 Mb/s ;
-52 dBm at 155 Mb/s
●
TLD expertise in Optoelectronic packaging
TLD processes a wide expertise in Optoelectronic assembly and packaging for
different non-standard environments. These severe operating conditions covers:
Wide temperature range(*):
operating from -55 °C to + 125 °C ;❍
storage from -65 °C to + 155 °C❍
●
Space environment : where size, mass or irradiation are crucial●
Nuclear environment: where irradiation is critical●
(*) certified by French DOD
TLD : References - 3
Applications
TLD can design any kind of Optoelectronic products.
Digital functions with non standard bit rate●
Pseudo digital fonctions as optical bus for Aircraft applications●
Low noise and ultra linear circuits for Analog applications●
An example is given as high speed optoelectronic functions for Space
communications between satellites.
TLD : References - 3
Company
profile References Products News Contacts
Laser diodes for gas sensors
Laser Diode Spectrometer system
The system uses one Laser Diode driving a power divider. One part is sent via the
hybrid cable to the Transmitter and Receiver. The other part of the light goes to a
reference cell containing only the gas to be measured with a known concentration.
The output signal of the detector goes to the control unit which in turn optimises the
Laser Diode current for fine tuning of the wavelength output.
( by courtesy of ALTOPTRONIC AB )
Laser Diode Spectrometer system advantages
High accuracy: down to 100ppb @ 1m measurement path (depending on gas)●
Fast response time●
Minimum of maintenance●
TLD : References - 2 - Laser diodes for gas sensors
High selectivity●
TLD : References - 2 - Laser diodes for gas sensors
