EMZ2T2R - ROHM Electronics

EMZ2 / UMZ2N / IMZ2A

Transistors

Rev.A 1/4

Power management (dual transistors)

EMZ2 / UMZ2N / IMZ2A

zFeature

1) Both a 2SA1037AK chip and 2SC2412K chip in a

EMT or UMT or SMT package.

zEquiva lent circuit s

EMZ2 / UMZ2N

(3) (2) (1)

(4) (5) (6)

IMZ2A

(4) (5) (6)

(3) (2) (1)

zA bsolute maximum ratings (Ta = 25°C)

Parameter Symbol Limits

−60 60

Unit

−50 50 V

−67

−150 150 V

300 (TOTAL)

−55 to +150 °C

150 °C

CBO

CEO

EBO

150 (TOTAL)

∗

IMZ2A

EMZ2, UMZ2N mW

Tstg

∗

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

zPackage, marking, and packaging specifications

Part No. UMZ2N

UMT6

3000

EMZ2

EMT6

T2R

8000

IMZ2A

SMT6

T108

3000

Package

Marking

Code

Basic ordering unit (pieces)

zExternal dimensions (Unit : mm)

ROHM : EMT6

ROHM : UMT6

UMZ2N

EMZ2

EIAJ : SC-88

2.0

Each lead has same dimensions

0to0.1

(6)

1.3

0.15

0.7

0.1Min.

2.1

0.65

0.2

1.25

(1)

0.65

(4)

(3)

(2)

(5)

ROHM : SMT6

IMZ2A

EIAJ : SC-74

Each lead has same dimensions

(6)

(5)

(4)

0.3to0.6

0.15 0.3

1.1

0.8

0to0.1

(3)

2.8

1.6

1.9

2.9

0.95

(2)

0.95

(1)

Each lead has same dimensions

0.22

1.2

1.6

(1)

(2)(5)

(3)

(6)

(4)

0.13

0.5

1.0

1.6

EMZ2 / UMZ2N / IMZ2A

Transistors

Rev.A 2/4

zElectrical characteristics (Ta=25°C)

Tr1

(PNP)

Parameter Symbol Min. Typ. Max. Unit Conditions

BVEBO

ICBO

IEBO

VCE(sat)

hFE

BVCEO −50

−6

−

120

−

−0.1

−0.5

560

µA

−

IC = −1mA

BVCBO −60 −− VIC = −50µA

IE = −50µA

VCB = −60V

VEB = −6V

IC/IB = −50mA/−5mA

VCE = −6V , IC = −1mA

Cob

−

140

−

5MHz

pF VCE = −12V , IE = 2mA , f = 100MHz

VCB = −12V , IE = 0A , f = 1MHz

Tr2

(NPN)

Parameter Symbol Min. Typ. Max. Unit Conditions

BVEBO

ICBO

IEBO

VCE(sat)

hFE

BVCEO 50

−

120

−

0.1

0.4

560

µA

−

IC = 1mA

BVCBO 60 −−VIC = 50µA

IE = 50µA

VCB = 60V

VEB = 7V

IC/IB = 50mA/5mA

VCE = 6V , IC = 1mA

Cob

−

180

−

3.5 MHz

pF VCE = 12V , IE = −2mA , f = 100MHz

VCB = 12V , IE = 0A , f = 1MHz

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current

transfer ratio

Transition frequency

Output capacitance

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current

transfer ratio

Transition frequency

Output capacitance

∗

Transition frequency of the device.

∗

Transition frequency of the device.

zElectrical characteristics curves

PNP T r

Fig.1 Grounded emitter propagation

characteristics

−0.2

COLLECTOR CURRENT : Ic (

mA)

−50

−20

−10

−5

−2

−1

−0.5

−0.2

−0.1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6

= −6V

BASE TO EMITTER VOLTAGE : V

(

Ta=100˚C

25˚C

−40˚C

Fig.2 Grounded emitter output

characteristics (I)

−0.4

−4

−8

−1.20

−2

−6

−10

−0.8 −1.6 −2.0

−3.5µA

−7.0

−10.5

−14.0

−17.5

−21.0

−24.5

−28.0

−31.5

Ta=25˚C −35.0

COLLECTOR CURRENT : I

(mA)

COLLECTOR TO MITTER VOLTAGE : V

(V)

Fig.3 Grounded emitter output

characteristics (II)

−40

−80

−5−3−4−2−1

−20

−60

−100

Ta=25˚C

COLLECTOR CURRENT : I

(

)

COLLECTOR TO EMITTER VOLTAGE : VCE (

−50µA

−100

−150

−200

−250

−500

−450

−400

−350

−300

EMZ2 / UMZ2N / IMZ2A

Transistors

Rev.A 3/4

Fig.4 DC current gain vs.

collector current (I)

500

200

100

−0.2 −0.5 −1−2−5−10 −20 −50 −100

DC CURRENT GAIN : hFE

Ta=25˚C VCE= −5V

−3V

−1V

COLLECTOR CURRENT : IC (

mA)

Fig.5 DC current gain vs.

collector current (II)

500

200

100

−0.2 −0.5 −1−2−5−10 −20 −50−100

DC CURRENT GAIN : h

COLLECTOR CURRENT : I

(

mA)

= −6V

Ta=100˚C

−40˚C

25˚C

Fig.6 Collector-emitter saturation

voltage vs. collector current (I)

−0.1

−0.2 −0.5 −1−2−5−10 −20 −50 −100

−1

−0.5

−0.2

−0.05

Ta=25˚C

COLLECTOR CURRENT : I

(

mA)

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(

Fig.7 Collector-emitter saturation

voltage vs. collector current (II)

−0.1

−0.2 −0.5 −1−2−5−10 −20 −50 −100

−1

−0.5

−0.2

−0.05

COLLECTOR CURRENT : I

(mA)

=10

Ta=100˚C

25˚C

−40˚C

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(

Fig.9

Collector output capacitance vs.

collector-base voltage

Emitter inputcapacitance vs.

emitter-base voltage

COLLECTOR TO BASE VOLTAGE : VCB (V)

EMITTER TO BASE VOLTAGE : VEB (V)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER INPUT CAPACITANCE : Cib (pF)

−0.5 −20

−1−2−5−10

Cib

Cob

Ta=25˚C

f=1MHz

=0A

Fig.8 Gain bandwidth product vs.

emitter current

50 1000.5 20

100

200

500

1000

12 510

EMITTER CURRENT : I

(

mA)

TRANSITION FREQUENCY : f

(

MHz)

Ta=25˚C

= −

12V

NPN Tr

Fig.10 Grounded emitter propagation

characteristics

0.1

0.2

0.5

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

100°C

=6V

COLLECTOR CURRENT : I

(mA)

BASE TO EMITTER VOLTAGE : V

(V)

25°C

−55°C

Fig.11 Grounded emitter output

characteristics ( Ι )

100

0.4 0.8 1.2 1.6 2.00

COLLECTOR CURRENT : I

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

(V)

0.05mA

0.10mA

0.15mA

0.25mA

0.30mA

0.35mA

0.20mA

Ta=25°C

=0A

0.40mA

0.50mA

0.45mA

4 8 12 16

=0A

Ta=25°C

COLLECTOR CURRENT : I

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

(V)

3µA

6µA

9µA

12µA

15µA

18µA

21µA

24µA

27µA

30µA

Fig.12 Grounded emitter output

characteristics ( ΙΙ )

EMZ2 / UMZ2N / IMZ2A

Transistors

Rev.A 4/4

0.2

10 0.5 1 2 5 10 20 50 100 200

100

200

500

=5V

Ta=25°C

Fig.13 DC current gain vs.

collector current ( Ι )

DC CURRENT GAIN : h

COLLECTOR CURRENT : I

C (mA)

0.2 0.5 1 2 5 10 20 50 100 200

100

200

500

25°C

−55°C

Ta=100°CV

Fig.14 DC current gain vs.

collector current ( ΙΙ )

DC CURRENT GAIN : h

COLLECTOR CURRENT : I

C (mA)

Fig.15 Collector-emitter saturation

voltage vs. collector current

0.2

COLLECTOR SATURATION VOLTAGE : VCE(sat)

(V)

COLLECTOR CURRENT : I

(mA)

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100 200

=50

Ta=25°C

Fig.16 Collector-emitter saturation

voltage vs. collector current ( Ι )

0.2

COLLECTOR SATURATION VOLTAGE : VCE(sat)

(V)

COLLECTOR CURRENT : I

(mA)

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100 200

=10

Ta=100°C

25°C

−55°C

Fig.17 Collector-emitter saturation

voltage vs. collector current (ΙΙ)

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : IC

(mA)

0.2

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100

IC/IB=50

Ta=100°C

25°C

−55°C

Fig.18 Gain bandwidth product vs.

emitter current

−0.5 −1−2−5−10 −20 −50 −100

100

200

500

Ta=25°C

=6V

EMITTER CURRENT : I

(mA)

TRANSITION FREQUENCY : f

(MHz)

Fig.20 Base-collector time constant

vs. emitter current

−0.2 −0.5 −1−2−5−10

BASE COLLECTOR TIME CONSTANT : Cc·r

bb' (ps)

EMITTER CURRENT : I

(mA)

100

200 Ta=25°C

f=32MH

=6V

Fig.19 Collector output capacitance vs.

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

COLLECTOR TO BASE VOLTAGE : V

(V)

EMITTER TO BASE VOLTAGE : V

(V)

COLLECTOR OUTPUT CAPACITANCE : Cob (

pF)

EMITTER INPUT CAPACITANCE : Cib (

pF)

0.2 0.5 1 2 5 10 20 50

Cob

Ta=25°C

1MHz

=0A

Cib

Appendix

Appendix1-Rev1.1

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.