FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 FGB3040G2-F085 / FGD3040G2-F085 FGP3040G2-F085 / FGI3040G2-F085 EcoSPARK(R)2 300mJ, 400V, N-Channel Ignition IGBT Features Applications SCIS Energy = 300mJ at TJ = 25oC Automotive lgnition Coil Driver Circuits Logic Level Gate Drive Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package Symbol JEDEC TO-263AB D-Pak JEDEC TO-220AB E C G COLLECTOR G E R1 JEDEC TO-252AA D-Pak JEDEC TO-262AA E GATE C G R2 G EMITTER E COLLECTOR (FLANGE) Device Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 400 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 300 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 170 mJ IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25C 41 A IC110 Collector Current Continuous, at VGE = 5.0V, TC = 110C 25.6 A VGEM Gate to Emitter Voltage Continuous 10 V Power Dissipation Total, at TC = 25C 150 W 1 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -55 to +175 o C TSTG Storage Junction Temperature Range -55 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Reflow soldering according to JESD020C 260 o C ESD HBM-Electrostatic Discharge Voltage at100pF, 1500 4 kV CDM-Electrostatic Discharge Voltage at 1 2 kV @2014 Semiconductor Components Industries, LLC. August-2017, Rev. 3 Publication Order Number: FGB3040G2-F085/D Device Marking Device Package FGB3040G2 FGB3040G2-F085 FGD3040G2 FGD3040G2-F085 TO-263AB TO-252AA FGP3040G2 FGI3040G2 FGP3040G2-F085 TO-220AB FGI3040G2-F085 TO-262AA Reel Size 330mm Tape Width 24mm Quantity 800 330mm Tube 16mm N/A 2500 50 Tube N/A 50 Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1K, TJ = -40 to 150oC 370 400 430 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 390 420 450 V BVECS Emitter to Collector Breakdown Voltage ICE = -20mA, VGE = 0V, TJ = 25C 28 - - V BVGES Gate to Emitter Breakdown Voltage IGES = 2mA 12 14 - V - - 25 A - - 1 mA - - 1 - - 40 - 120 - 10K - 30K ICER Collector to Emitter Leakage Current IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance VCE = 250V, RGE = 1K VEC = 24V, TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC mA On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, L = 3.0 mHy,RG = 1K, Self Clamped Inductive Switching ESCIS VGE = 5V, (Note 1) TJ = 25oC - 1.15 1.25 V - 1.35 1.50 V TJ = 150oC - 1.68 1.85 V TJ = 25C - - 300 mJ - - 1 oC/W TJ = 150oC Thermal Characteristics RJC Thermal Resistance Junction to Case Notes: 1: Self Clamping Inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that starting Tj=25oC; L=3mHy, ISCIS=14.2A,VCC=100V during inductor charging and VCC=0V during the time in clamp. 2: Self Clamping Inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that starting Tj=150oC; L=3mHy, ISCIS=10.8A,VCC=100V during inductor charging and VCC=0V during the time in clamp. www.onsemi.com 2 FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 Package Marking and Ordering Information Symbol Parameter Test Conditions Min Typ - 21 Max Units Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V - nC 1.3 1.7 2.2 0.75 1.2 1.8 VCE = 12V, ICE = 10A - 2.8 - V Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1 VGE = 5V, RG = 1K Current Rise Time-Resistive TJ = 25oC, - 0.9 4 s - 1.9 7 s - 4.8 15 s - 2.0 15 s VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, VGEP Gate to Emitter Plateau Voltage TJ = 25oC TJ = 150oC V Switching Characteristics td(ON)R trR td(OFF)L tfL Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH, VGE = 5V, RG = 1K Current Fall Time-Inductive ICE = 6.5A, TJ = 25oC, www.onsemi.com 3 FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 Electrical Characteristics TA = 25C unless otherwise noted o TJ = 150 C 10 1 SCIS Curves valid for Vclamp Voltages of <430V 1 1000 10 100 tCLP, TIME IN CLAMP (S) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp 1.20 30 25 20 o TJ = 25 C 15 10 o TJ = 150 C 5 0 SCIS Curves valid for Vclamp Voltages of <430V 0 6 9 12 L, INDUCTANCE (mHy) 15 ICE = 10A 1.40 VGE = 4.0V VGE = 3.7V 1.30 VGE = 8V VGE = 5V 1.05 3 Figure 2. Self Clamped Inductive Switching Current vs. Inductance 1.35 1.10 1.25 VGE = 4.5V VGE = 5V 1.20 VGE = 4.5V VGE = 8V 1.15 1.00 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) Figure 3. Collector to Emitter On-State Voltage vs. Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) 35 1.45 VGE = 4.0V 1.15 RG = 1K, VGE = 5V, VCE = 100V 40 1.50 ICE = 6A VGE = 3.7V ISCIS, INDUCTIVE SWITCHING CURRENT (A) o TJ = 25 C 45 VCE, COLLECTOR TO EMITTER VOLTAGE (V) RG = 1K, VGE = 5V, VCE = 100V 30 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V 20 VGE = 3.7V 10 o 0 TJ = -40 C 0 4 1 2 3 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage vs. Collector Current 1.10 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) Figure 4. Collector to Emitter On-State Voltage vs. Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 100 30 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V 20 VGE = 3.7V 10 o 0 TJ = 25 C 0 4 1 2 3 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage vs. Collector Current www.onsemi.com 4 FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) (Continued) 30 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V 20 VGE = 3.7V 10 o 0 TJ = 175 C 0 4 1 2 3 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 30 VCE = 5V 20 TJ = 25oC TJ = -40oC 0 1.0 35 30 25 20 15 10 5 0 25 75 100 125 150 50 o TC, CASE TEMPERATURE( C) 175 10 o 8 VCE = 6V 6 VCE = 12V 4 2 0 0 LEAKAGE CURRENT (A) VTH, THRESHOLD VOLTAGE (V) 1.6 1.4 1.2 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE(oC) Figure 11. Threshold Voltage vs. Junction Temperature 20 30 40 Qg, GATE CHARGE(nC) 50 60 10000 VCE = VGE ICE = 1mA -25 10 Figure 10. Gate Charge 2.0 1.0 -50 4.5 ICE = 10A, TJ = 25 C Figure 9. DC Collector Current vs. Case Temperature 1.8 1.5 2.0 2.5 3.0 3.5 4.0 VGE, GATE TO EMITTER VOLTAGE (V) Figure 8. Transfer Characteristics VGS, GATE TO EMITTER VOLTAGE(V) ICE, DC COLLECTOR CURRENT (A) VGE = 5.0V 40 TJ = 175oC 10 Figure 7. Collector to Emitter On-State Voltage vs. Collector Current 45 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VECS = 24V 1000 100 10 VCES = 300V 1 VCES = 250V 0.1 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERATURE ( C) Figure 12. Leakage Current vs. Junction Temperature www.onsemi.com 5 FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 Typical Performance Curves (Continued) 12 2000 10 Resistive tOFF 8 Inductive tOFF 6 4 f = 1MHz VGE = 0V 1600 CIES 1200 800 CRES 400 2 COES Resistive tON 0 25 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) Figure 13. Switching Time vs. Junction Temperature BVCER, BREAKDOWN VOLTAGE (V) CAPACITANCE (pF) SWITCHING TIME (S) ICE = 6.5A, VGE = 5V, RG = 1K 0 175 15 20 5 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 Figure 14. Capacitance vs. Collector to Emitter Voltage 430 ICER = 10mA 420 o TJ = -40 C 410 o TJ = 25 C 400 o TJ = 175 C 390 380 10 100 RG, SERIES GATE RESISTANCE () 1000 6000 Figure 15. Break down Voltage vs. Series Gate Resistance 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZJC 1 D = 0.5 0.20 0.10 0.1 0.01 -5 10 0.05 0.02 0.01 SINGLE PULSE -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case www.onsemi.com 6 10 FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 Typical Performance Curves *Operation in this area is permitted during SCIS 100 ar d Pulse Operation * Pul ICE, COLLECTOR to EMITTER CURRENT (A) Operation in this area is limited by Vce(on) or transconductance 10us 10 100us 1 1ms 10ms *For Single Non Repetitive *For operation Single Non Repetitive Pulse Tj=175C Tc=25C Vge=5.0V Rev. 2.1 DC & 100ms 0.1 1 10 100 VCE, COLLECTOR to EMITTER VOLTAGE (V) Figure 17. Forward Safe Operating Area www.onsemi.com 7 500 FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 Typical Performance Curves L VCC R or L C PULSE GEN RG G LOAD C RG = 1K DUT G + DUT 5V E VCC E Figure 18. Inductive Switching Test Circuit Figure 19. tON and tOFF Switching Test Circuit BVCES VCE tP VCE L C VARY tP TO OBTAIN REQUIRED PEAK ISCIS VGE ISCIS VCC + RG G VCC DUT - E tP 0V ISCIS 0 0.01 tAV Figure 20. Energy Test Circuit Figure 21. Energy Waveforms www.onsemi.com 8 FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 Test Circuit and Waveforms ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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