G•SiC® Technology
MegaBright LEDs
Cxxx-MB290-S0100
Features Applications
• MegaBright Performance
– 9.0mW min (395nm) Ultraviolet
– 10.0mW min (405nm) Ultraviolet
• Single Wire Bond Structure
• Class I ESD Rating
• White LEDs
• Counterfeit Bill Detection
Description
Cree's MB series of MegaBright LEDs combine highly efficient InGaN materials with Cree's
proprietary G•SiC® substrate to deliver superior price performance for high intensity UltraViolet LEDs.
These LED chips have a geometrically enhanced vertical chip structure to maximize light extraction
efficiency, and require only a single wire bond connection. Cree's MB series chips are tested for
conformity to optical and electrical specifications and the ability to withstand 400V ESD. These LEDs
are useful in a broad range of applications such as white light applications and counterfeit bill detection,
yet can also be used in high volume applications. Cree's MB series chips are compatible with most radial
and SMT LED assembly processes.
Cxxx-MB290-S0100 Chip Diagram
Top
side View
G•SiC® LED Chip
300 x 300 µm
Mesa (junction)
240 x 240 µm
Gold Bond Pad
114 µm Diameter
Anode (+)
h = 250
µm
Backside
Metallization
Cathode (-)
InGaN
SiC Substrate
Bottom View Die Cross Section
CPR3BE Rev. -
© Cree, Inc. 2003 All Rights Reserved.
G•SiC® Technology
MegaBright LEDs
Cxxx-MB290-S0100
Maximum Ratings at TA = 25°C Notes 1&3 Cxxx-MB290-S0100
DC Forward Current 30mA
Peak Forward Current (1/10 duty cycle @ 1kHz) 100mA
LED Junction Temperature 125°C
Reverse Voltage 5 V
Operating Temperature Range -20°C to +80°C
Storage Temperature Range -30°C to +100°C
Electrostatic Discharge Threshold (HBM) Note 2 400 V
Electrostatic Discharge Classification (MIL-STD-883E) Note 2 Class 1
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20mA Note 3
Part Number
Forward Voltage
(Vf, V)
Reverse Current
[I(Vr=5V), µA]
Peak Wavelength
(λp, nm)
Optical Rise Time
(τ, ns)
Typ Max Max Min Typ Max Typ
C395-MB290-S0100 3.7 4.0 10 390 395 400 30
C400-MB290-S0100 3.7 4.0 10 390 400 410 30
C405-MB290-S0100 3.7 4.0 10 400 405 410 30
Mechanical Specifications Note 4 Cxxx-MB290-S0100
Description Dimension Tolerance
P-N Junction Area (µm) 240 x 240 ± 25
Top Area (µm) 300 x 300 ± 25
Bottom Area (µm) 200 x 200 ± 25
Chip Thickness (µm) 250 ± 25
Au Bond Pad Diameter (µm) 114 ± 20
Au Bond Pad Thickness (µm) 1.2 ± 0.5
Back Contact Metal Width (µm) 19.8 -5, +10
Notes:
1) Maximum ratings are package dependent. The above ratings were determ ined using a T-1 3/4 package with Hysol OS1600 epoxy for characterization.
Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are
not limited by the G•SiC die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of
the T-1 3/4 package; junction temperatur e should be characterized in a specific package to determine limitations. Assembly processing temperature
must not exceed 325°C (< 5 seconds).
2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAE T ). The RAET procedures
are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD.
3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20
mA within the maximum ratings shown above. Efficiency decreases at higher curr e nts. Typical values given are the average values expected by Seller
in large quantities and are provided for information only. Seller gives no assurances Products shipped will exhibit such typical ratings. All
measurements were ma de using lamps in T-1 3/4 packages with Hysol OS1600 epoxy.
4) All Products conform to the listed mechanical specifications within the tolerances shown.
5) Caution: To obtain optimum output ef ficiency, the maxim um height of die attach epoxy on the side of the chip should not exc eed 80µm.
CPR3BE Rev. -
© Cree, Inc. 2003 All Rights Reserved.
CPR3BE Rev. -
© Cree, Inc. 2003 All Rights Reserved.
G•SiC® Technology
MegaBright LEDs
Cxxx-MB290-S0100
Standard Bins for UltraViolet MB290:
LED chips are sorted to the radiant flux and peak wavelength bins. A sorted die sheet contains die from only one bin.
Sorted die kit (Cxxx-MB290-S0100) orders may be filled with any or all bins (Cxxx-MB290-01xx) contained in the kit.
1
1.0mW 12.0mW
9.0mW 10.0mW
C400MB290-S 0100 Sorte d Die Kit conta i ns all bi ns shown a bove (390-410nm).
C395MB290-S0100
390 395
C395MB290-0103
C395MB290-0101
C395MB290-0104
C395MB290-0102
C405MB290-S0100
400 405 410
C405MB290-0103 C405MB290-0104
C405MB290-0101 C405MB290-0102
400
Radiant Flux
Pea k Wavelength (nm) Pea k Wavelength (nm)
