G*SiC(R) Technology MegaBright LEDs Cxxx-MB290-S0100 Features * Applications MegaBright Performance - 9.0mW min (395nm) Ultraviolet - 10.0mW min (405nm) Ultraviolet * Single Wire Bond Structure * Class I ESD Rating * White LEDs * Counterfeit Bill Detection Description Cree's MB series of MegaBright LEDs combine highly efficient InGaN materials with Cree's proprietary G*SiC(R) substrate to deliver superior price performance for high intensity UltraViolet LEDs. These LED chips have a geometrically enhanced vertical chip structure to maximize light extraction efficiency, and require only a single wire bond connection. Cree's MB series chips are tested for conformity to optical and electrical specifications and the ability to withstand 400V ESD. These LEDs are useful in a broad range of applications such as white light applications and counterfeit bill detection, yet can also be used in high volume applications. Cree's MB series chips are compatible with most radial and SMT LED assembly processes. Cxxx-MB290-S0100 Chip Diagram Bottom View Topside View G*SiC(R) LED Chip 300 x 300 m Mesa (junction) 240 x 240 m Gold Bond Pad 114 m Diameter CPR3BE Rev. (c) Cree, Inc. 2003 All Rights Reserved. Die Cross Section Anode (+) h = 250 m Backside Metallization Cathode (-) InGaN SiC Substrate G*SiC(R) Technology MegaBright LEDs Cxxx-MB290-S0100 Maximum Ratings at TA = 25C Notes 1&3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Note 2 Cxxx-MB290-S0100 30mA 100mA 125C 5V -20C to +80C -30C to +100C 400 V Class 1 Typical Electrical/Optical Characteristics at TA = 25C, If = 20mA Note 3 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), A] Peak Wavelength (p, nm) Optical Rise Time (, ns) Typ Max Max Min Typ Max Typ C395-MB290-S0100 3.7 4.0 10 390 395 400 30 C400-MB290-S0100 3.7 4.0 10 390 400 410 30 C405-MB290-S0100 3.7 4.0 10 400 405 410 30 Mechanical Specifications Note 4 Description P-N Junction Area (m) Top Area (m) Bottom Area (m) Chip Thickness (m) Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Back Contact Metal Width (m) Cxxx-MB290-S0100 Dimension 240 x 240 300 x 300 200 x 200 250 114 1.2 19.8 Tolerance 25 25 25 25 20 0.5 -5, +10 Notes: 1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package with Hysol OS1600 epoxy for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the G*SiC die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). 2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD. 3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages with Hysol OS1600 epoxy. 4) All Products conform to the listed mechanical specifications within the tolerances shown. 5) Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80m. CPR3BE Rev. (c) Cree, Inc. 2003 All Rights Reserved. G*SiC(R) Technology MegaBright LEDs Cxxx-MB290-S0100 Standard Bins for UltraViolet MB290: LED chips are sorted to the radiant flux and peak wavelength bins. A sorted die sheet contains die from only one bin. Sorted die kit (Cxxx-MB290-S0100) orders may be filled with any or all bins (Cxxx-MB290-01xx) contained in the kit. Radiant Flux C395MB290-S0100 C395MB290-0103 C405MB290-S0100 C395MB290-0104 11.0mW C405MB290-0103 C405MB290-0104 C405MB290-0101 C405MB290-0102 12.0mW C395MB290-0101 9.0mW 390 C395MB290-0102 395 Pe ak Wave le ngth (nm) 400 10.0mW 400 405 Pe ak Wave le ngth (nm) C400MB290-S0100 Sorted Die Kit contains all bins shown above (390-410nm). CPR3BE Rev. (c) Cree, Inc. 2003 All Rights Reserved. 410