-Numerical Index VARAC TOR DIODES INDEX (continued) 1N4808-1N5153 CAPACITANCE MULTIPLIER PERFORMANCE | Voltage P PAGE I D . | TPE | yumeer | , | lotmay! Rage | Be| a@t | HX) @ Min Min C; Tol | Eaminy | Vi yp" 25C | Pin | fin | Pout | four | 7 o 2 prot % 1 Volts | Voits | Volts GHz | ohms | Watts |Watts| GHz | Watts | GHz | % 1N4808 27 20 |2.46 0 14.0 65 15 }0.05 0.50 1N4808A 27 10 | 2.46 0 14.0 65 15 |0.05 0.50 1N4808B 27 5.0 12.46 0 14.0 65 15 }0.05 0.50 1LN4 8086 27 2.0 12.46 444.90 65 L5 $0.05 9.50 1N4808D 27 1.0 |2.46 0 14.0 65 15 }0.05 0.50 1N4 809 33 20 12.46 0 44.0 60 15 }0.05 0.50 1N4809A 33 10 |2.46 0 14.0 60 15 |0.05 0.50 1N4809B 33 5.0 12.46 0 14.0 60 15 70.05 0.50 1N4809C 33 2.0 12.46 0 44.0 60 15 490.05 9.50 1N4809D 33 1.0 [2.46 0 14.0 60 15 |0.05 0.50 1N4810 39 20 12.44 Q 44.0 55 15 10.05 0.50 1N4810A 39 10 {2.44 0 14.0 55 15 |0.05 0.50 1N4810B 39 5.0 12,44 0 14.0 55 15 10.05 0.50 1N4810C 39 2.0 12.44 Q 14.0 55 15 10.05 0.50 1N4810D 39 1.0 12.44 oO 14.0 55 15 |0.05 0.50 1N4811 47 20 12.43 0 14.0 50 15 |0.05 0.50 1IN4811A 47 10 (2.43 Q 14.0 50 15 {0.05 0.50 1N4811B 47 5.0 12.43 0 14.0 50 15 ;0.05 0.50 1N4811C 47 2.0 |2.43 0 {4.0 50 15 |0.05 0.50 1N4811D 47 1.0 (2.43 Q 14.0 50 15 0.05 0.50 1N4812 56 20 12.42 0 14.0 40 15 |0.05 0.50 1N4812A 56 10 | 2.42 0 (4.0 40 15 10.05 0.50 1N4812B 56 5.0 | 2.42 Oo 14.0 40 15 |0.05 0.50 1N4812C 56 2.0 12,42 0 14.0 40 15 70.05 0.50 1N4812D 56 1.0 [2.42 0 {4.0 40 15 [0.05 0.50 1N4813 68 20 |2.40 0 {4.0 30 15 |0.05 0.50 1N4813A 68 10 | 2.40 0 14.0 30 15 $0.05 0.50 1N4813B 68 5.0 [2.40 0 44.0 30 15 [0.05 0.50 1N4813C 68 2.0 |2.40 0 14.0 30 15 [0.05 0.50 1N4813D 68 1.0 |2.40 0 14.0 30 15 |0.05 0.50 1N4814 82 20 |2.36 0 14.0 20 15 {0.05 0.50 1N4814A 82 10 |} 2.36 0 14.0 20 15 |0.05 0.50 1N4814B 82 5.0 | 2.36 Oo 14.0 20 15 |0.05 0.50 1N4814C 82 2.0 {2.36 0 14.0 20 15 [0.05 0.50 1N4814D 82 1,0 | 2.36 0 14.0 20 15 10.05 0.50 1N4815 100 20 12.33 0 14.0 20 15 10.05 0.50 LN4815A 100 10 | 2.33 0 14.0 20 15 |0.05 0.50 1N4815B 100 5.0 | 2.33 0 14.0 20 15 ]0.05 0.50 1N4815C 100 2.0 |2.33 0 |4.0 20 15 |0.05 0,50 1N4815D 100 1.0 12.33 0 14.0 20 15 |0.05 0.50 1N4885 35 2.57 16.0 [150 | 150 0.70 20 1N4886 35 2.57 |6.0 {120 | 120 0.80 20 1N4941 0.4 2.0 Q 16.0 |6.0 4} 2000 10 2.0 0.1 1N5139 12-10 6.8% 10 2.9 |4.0 60 60 350 |0.05 0.4 1N5139A 12-10 6.8% 5.0 2.9 14.0 60 60 350 |0.05 0.4 1N5140 12-10 10* 10 3.0 | 4.0 60 60 300 {0.05 0.4 1N5140A 12-10 10* 5.0 3.0 |4.0 60 60 300 |0.05 0.4 1N5141 12-10 12* 10 3.0 14.0 60 60 300 }0.05 O.4 IN5141A 12-10 12* 5.0 3.0 14.0 60 60 300 |0.05 0.4 1N5142 12-10 15* 10 3.0 14.0 60 60 250 70.05 0.4 1N5142A 12-10 15* 5.0 3.0 14.0 60 60 250 | 0.05 0.4 1N5143 12-10 18% 10 3.0 [4.0 60 60 250 |0.05 0.4 IN5143A 12-10 18% 5.0 3.0 )4.0 60 60 250 |0.05 0.4 1N5144 12-10 22* 10 3.4 14.0 60 60 200 |0.05 0.4 1N5144A 12-10 22* 5.0 3.4 14.0 60 60 200 |0.05 0.4 IN5145, 12-10 27% 190 3.4 44.0 60 60 200 |}0.05 0.4 1N5145A 12-10 27% 5.0 3.4 [4.0 60 60 200 {0.05 0.4 1N5146 12-10 33% 10 3.4 [4.0 60 60 200 10.05 0.4 LN5 146A 12-10 33% 5.9 3.4 14.0 60 60 200 |0.05 0.4 1N5147 12-10 39% 10 3.4 [4.0 60 60 200 10.05 0.4 LN5S147A 12-10 39% 5.0 3.4 14.0 60 60 200 10.05 0.4 1N5148 12-10 47* 10 3.4 ]4.0 60 60 200 {0.05 0.4 IN5148A 12-10 47* 5.0 3.4 ]4.0 60 60 200 |0.05 0.4 IN5149 12-12 411.5% 80 800 40.05 10 20 40.5 li 1.0 55 LN5150 12-12 |11.5* 80 800 |0.05 14 37 $0.5 24 1.0 65 LNSLSOA 42-15 12 19 aa 800 10.05 10.25%) 29.2 37 10.5 [25.1 1.0 68 IN5151 12-17 5.8% 75 11100 10.05 0.5 5.5 12 [1.0 6.0 2.0 50 LN5152 12-17 5.8% 75 |1100 | 0.05 0.5 5.5 12 [1.0 6.0 2.0 50 1N5152A 12-15 6.0 10 75 | 1100 |0.05 0O.5*! 11.7 12 |1.0 7.5 2.0 60 1N5153 12-17 5.8* 75 {1100 | 0.05 0.5 5.5 12 {1.0 6.0 2.0 50 1-891n5149 (MV1806C) in5150 (MV1807C) Voltage Variable Capacitance Diodes Vp = 80V I; =1.0A P, to 14W Silicon high-frequency step-recovery power varactors for 100 MHz to 2.0 GHz harmonic-generation applications CASE 47 cathode MAXIMUM RATINGS (Ta = 25C unless otherwise noted) with output power up to 25 watts at 1.0 GHz. Rating Symbol | Value Unit Reverse Voltage Vp 80 Vdc Forward Current I, 1.0 Amp RF Power Input 1N5149 P, 25 Watts 1N5150 m 40 Total Device Dissipation @ Ty = 75C 1N5149 Py 10 Watts 1N5150 14 Derate above 75C 1N5149 0.08 w/C 1N5150 0.11 Junction Temperature Ty +200 c Storage Temperature Range Tete -65 to +200 c ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol Test Conditions Min | Typ } Max | Unit Reverse Breakdown Voltage BV, Ip = 10 wAdc 80 90 _ Vde Reverse Current In VR = 70 Vdc _ _ 2 pAde Vp = 70 Vde, Ty = 150C} _ 100 Diode Capacitance Cy VR = 6 Vdc, f = 50 MHz 5 11.5 20 pF Figure of Merit Q VR = 6 Vdc, f = 50 MHz _ 800 _ _ Thermal Resistance P| IN5150 _ _ 9 C/W FUNCTIONAL TEST I1N5149 RF Power Output P Test Setup Figure 1 rel _ |Watts out Pin =20W fin 20.5 GHz Doubler Efficiency n { .=1.0 GHz 55 _ _ % out . 1N5150 Test Setup Figure 1 _ RF Power Output Pout P = 37W 24 25 Watts fin = 0.5 GHz Doubler Efficiency n f = 1.0 GHz 65 68 _ % out . 12-12Voltage Variable Capacitance Diodes 1N5149, 1N5150 (continued) FIGURE 1 HARMONIC DOUBLER EFFICIENCY TEST CIRCUIT 500 MHz COAX CAVITY 1 GHz COAX CAVITY 4 r a] 500 MHz O- ! f O 1GHz Z,, = 50 ohms | ' Zou = 90 ohms 1 MEGOHM ' | | | | ! | L 3 _ 1N5150 # > 3 & & x 2 = 40 To, CASE TEMPERATURE (C) FIGURE 2 LINEARITY CHARACTERISTIC FIGURE 3 CAPACITANCE WITHOUT RETUNING versus REVERSE VOLTAGE 24 21 | | 2 1N5150 | = 1s t A & 5S 15; fi, = 500 MHz Le ws = fous = 1000 MHz 2 3 2 = gs <= = 3 _ 3s a Ee $ 6 a (CIRCUIT TUNED FOR 30 WATTS INPUT POWER) 3 a Reias = 100% ohms 1 t J L 1 \ | ar 6 9 2 1 18 @ 2 27 30 10 20 30 50 70 10 20 30 50 70 100 Pin, POWER INPUT (WATTS) Vp, REVERSE VOLTAGE (VOLTS) 12-131N5149, 1N5150 (continued) Voltage Variable Capacitance Diodes POWER OUTPUT versus OUTPUT FREQUENCY IN5149 FIGURE 4A DOUBLING {X2) 100 $00 900 2100 four, OUTPUT FREQUENCY (MHz) FIGURE 4B TRIPLING (X3) 100 500 900 1700 2100 four OUTPUT FREQUENCY (MHz) FIGURE 4 QUADRUPLING (x4) Pi, = Pou POWER OUTPUT OWATTS} four, OUTPUT FREQUENCY (MHz) Pout, POWER OUTPUT (WATTS) Pout, POWER OUTPUT (WATTS) Pout, POWER OUTPUT (WATTS) 12-14 100 1N5150 FIGURE 5A DOUBLING (X2) 500 900 fous, OUTPUT FREQUENCY (MHz) 1700 FIGURE 5B TRIPLING (X3) 500 FIGURE 5C QUADRUPLING (X4) 500 900 1300 four, OUTPUT FREQUENCY (MHz) 900 1300 four OUTPUT FREQUENCY (MHz) 1700 3 1700 2100 2100Numerical Index IN5117-1N5234A RECTIFIERS ZENER DIODES =z e Vp Ve . = = pace | = | Wolts) | (olts) camps) | 2(mit) may] Ve% | Po TYPE fe | REPLACEMENT = . m NUMBER | = 2 T (min) +: Tmax) | : oho ae : : Cc * 1N5117 8 1M200ZSB5 2-29 ZD 400* 5.0 1.0W 1N5118 Ss ZD 14% 5.0 | 3.0W 1N5119 ZD 40* 5.0 3.0W 1N5120 s ZD 45* 5.0 3.0W 1N5121 s ZzD 50% 5.0 3.0W 1N5122 8 ZD 60* 5.0 3.0W 1N5123 s ZD 70* 5.0 3.0W 1N5124 s ZD 80* 5.0 3.0W 1N5125 8 ZD 90% 5.0 3.0W 1N5126 S ZD 140% 5.0 3.0W 1N5127 s zZzD 170* 5.0 3.0W 1N5128 s ZD 190* 5.0 3.0W 1N5129 s ZD 260* 5.0 3.0W 1N5130 s ZD 280% 5.0 3.0W 1N5131 i) ZD 320* 5.0 } 3.0W 1N5132 s ZD 340% 5.0 | 3.0W 1N5133 s ZzD 380% 5.0 | 3.0W 1N5134 s zD 400* 5.0 } 3.0W 1N5139 thru Varactors, See table on page 1-86 1N5157 | 1N5150A Varactor, See table on page 1-86 1N5152A Varactor, See table on page 1-86 IN5153A Varactor, See table on page 1-86 IN5155A Varactor, See table on page 1-86 1N5156 thru Varactors, See table on page 1-86 1N5157 } 1N5158 thru 4-Layer Diodes, See table on Page 1-96 1N5160 1N5163 s Harmonic Generator 1N5181 s R 4000 0.6 0.02 1N5182 s R 5000 0.6 0.02 1N5183 Ss R 7500 0.6 0.02 1N5184 Ss R 10,000 0.6 0.02 1N5197 8 R 50 2.0 0.1 1N5198 Ss R 100 2.0 0.1 1N5199 s R 200 2.0 0.1 1N5200 8 R 400 2.0 0.1 1N5201 s R 600 2.0 O.1 1N5221 8 2-32 ZD 2.4% 10 500M 1N5221A s 2-32 ZD 2.4% 10 500M 1N5221B S 2-32 ZzD 2.4% 5.0 500M 1N5222 s 2-32 zD 2.5* 10 | 500M 1N5222A s 2-32 2D 2.5% 10 500M 1N5222B s 2-32 ZD 2.5% 5.0 500M 1N5223 5 2-32 ZzD 2.7% 10 500M 1N5223A | S 2-32 ZD 2.7% 10 | 500M 1N5223B s 2-32 ZzD 2.7% 5.0 500M 1N5224 8 2-32 ZD 2.8% 10 500M 1N5224A | S 2-32 2D 2.8% 10 | 500M 1N5224B s 2-32 ZD 2.8% 5.0 500M 1N5225 2-32 ZD 3.0% 10 500M 1N5225A | S 2-32 2D 3.0% 10 | 500M 1N5225B s 2-32 ZD 3.0* 5.0 500M 1N5226 8 2-32 ZD 3.3% 10 500M 1N5226A | S 2-32 ZD 3.3% 10 | 500M 1N5226B S 2-32 ZD 3.3% 5.0 500M 1N5227 s 2-32 ZD 3.6% 10 500M 1N5227A 8 2-32 ZD 3.6% 10 500M 1N5227B s 2-32 ZD 3.6% 5.0 500M 1N5228 Ss 2-32 zD 3.9% 10 500M 1N5228A Ss 2-32 ZD 3.9% 10 500M 1N5228B s 2-32 ZD 3.9% 5.0 500M 1N5229 8 2-32 ZD 4.3% 10 500M 1N5229A |] S 2-32 ZD 4.3% 10 | 500M 1N5229B 8 2-32 ZD 4.3% 5.0 500M 1N5230 S 2-32 ZD 47% 10 500M 1N5230A 8 2-32 zD 4.7% 10 500M 1N5230B 8 2-32 ZD 4.7% 5.0 500M 1N5231 S 2-32 zD 5.1* 10 500M 1N5231A 8 2-32 ZzD 5.1% 10 500M 1N5231B s 2-32 ZD 5.1% 5.0 500M 1N5232 8 2-32 ZD 5.6% 10 500M 1N5232A $ 2-32 zD 5.6* 10 500M 1N5232B $ 2-32 ZD 5.6% 5.0 500M 1N5233 s 2-32 zD 6.0* 10 500M 1N5233A Ss 2-32 ZD 6.0% 10 500M 1N5233B | S 2-32 ZD 6.0% 5.0 | 500M 1N5234 s 2-32 ZD 6.2% 10 500M 1N5234A Ss 2-32 zD 6.2% 10 500M R~Rectifier, RDReference Diode, ZDZener Diode, GPGeneral Purpose, HCHigh Conductance (= 20mA @ =1V), HS High Speed Switch (Max ty, < 0.38), CSHigh Conductance, High Speed Switch, MSMedium Speed Switch, PAParametric Amplifier, SP Special Purpose. 1-81