SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Complementary to KTD718. C Recommended for 45 50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING (Ta=25 ) d CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5 V Collector Current IC -10 A Base Current IB -1 A PC 80 W Tj 150 Tstg -55 150 P 1 P 2 T M 3 DIM A B C D d E F G H I J K L M P Q T MILLIMETERS 15.9 MAX 4.8 MAX _ 0.3 20.0 + _ 0.3 2.0 + 1.0+0.3/-0.25 2.0 1.0 3.3 MAX 9.0 4.5 2.0 1.8 MAX _ 0.5 20.5 + 2.8 _ 0.2 5.45 + _ 0.2 3.2 + 0.6+0.3/-0.1 1. BASE 2. COLLECTOR Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC 3. EMITTER TO-3P(N) ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -10 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -10 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -120 - - V DC Current Gain hFE (Note) VCE=-5V, IC=-1A 55 - 160 VCE(sat) IC=-5A, IB=-0.5A - - -2.5 V Base-Emitter Voltage VBE VCE=-5V, IC=-5A - - -1.5 V Transition Frequency fT VCE=-5V, IC=-1A - 10 - MHz VCB=-10V, IE=0, f=1MHz - 280 - pF Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification R:55 1997. 1. 25 110, O:80 160 Revision No : 0 1/2 KTB688 0m A COMMON EMITTER -4 0 -8 Tc=25 C mA 0 -30 -200mA -6 -100mA -4 -50mA I B =-20mA -2 0mA 0 -2 -4 -6 -8 -10 -12 -14 100 1 Ta=Tc INFINITE HEAT SINK 2 300x300x2mm Al HEAT SINK 3 200x200x2mm Al HEAT SINK 4 100x100x2mm Al HEAT SINK 1 80 60 2 40 3 5 NO HEAT SINK 4 20 5 0 0 40 80 120 160 200 COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( C) VCE(sat) - IC SAFE OPERATING AREA -5 -3 -30 COMMON EMITTER -1 -0.5 -0.3 C 0 10 = Tc Tc=25 C Tc=-25 C -0.1 -0.05 -0.03 -0.03 -0.1 t=1ms t=10ms t=100ms t=500ms I C MAX(PULSED) I C/I B =10 -0.01 -0.01 240 -0.3 -1 -3 -10 I C MAX(CONTINUOUS) -10 DC O Tc PE =2 RA 5 TI C ON -5 -3 -1 SINGLE NONREPETITIVE PULSE Tc=25 C -0.5 -0.3 VCEO MAX COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) -10 COLLECTOR POWER DISSIPATION PC (W) Pc - Ta IC - VCE CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.1 COLLECTOR CURRENT IC (A) -1 -3 -10 -30 -100 -300 COLLECTOR EMITTER VOLTAGE VCE (V) hFE - IC 1k DC CURRENT GAIN hFE COMMON EMITTER 500 VCE =-5V 300 Tc=100 C Tc=25 C 100 Tc=-25 C 50 30 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT IC (A) 1997. 1. 25 Revision No : 0 2/2