GS61008P
100V enhancement mode GaN transistor
PRELIMINARY DATASHEET
Preliminary – Rev 150405
© 2009-2015 GaN Systems Inc.
1
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Features
– 100V enhancement mode power switches
– Ultra low FOM Island Technology™ die
– Low inductance GaNPX™ package
– Footprint compatible family
– Reverse current capability
– Zero reverse recovery loss
– Source-sense for optimal high speed design
– RoHS 6 compliant
Applications
– 48V DC-DC conversion
– AC-DC power supplies (secondary)
– VHF very small form-factor AC-DC Adapter
– Appliances and power tools
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Symbol
Value
Unit
Operating Junction Temperature
TJ
-55 to +150
°C
Storage Temperature Range
TS
-55 to +150
°C
Drain-to-Source Voltage
VDS
100
V
Gate-to-Source Voltage
VGS
±10
V
Continuous Drain Current (Tcase=25°C) (Note 1)
IDS(cont)25
90
A
Continuous Drain Current (Tcase=100°C)
IDS(cont)100
60
Pulsed Drain Current (Tcase=25°C)
IDS(pulse)25
135
(1) Limited by saturation
Thermal Characteristics (Typical values unless otherwise noted)
Parameter
Symbol
Value
Units
Thermal Resistance (junction to case)
RΘJC
0.55
°C /W
Thermal Resistance (junction to ambient) (Note 2)
RΘJA
55
Maximum Soldering Temperature (MSL3 rated)
TSOLD
260
°C
(2) Device mounted on 40mm x 40mm x 1.5mm single layer epoxy PCB FR4 with 6cm2 copper area (thickness 70μm) for thermal pad
connection. PCB is vertical without air stream cooling.
Ordering information
Part number
Package type
Ordering code
Packing method
GS61008P
GaNPX
GS61008P-TR
Tape-and-reel
GS61008P
GaNPX
GS61008P-MR
Mini-reel
D
S
G
SS
D
S
SS
G
top view
TP
TP = thermal pad
GS61008P
100V enhancement mode GaN transistor
PRELIMINARY DATASHEET
Preliminary – Rev 150405
© 2009-2015 GaN Systems Inc.
2
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Electrical Characteristics (Typical values at TCASE= 25°C unless otherwise noted)
Parameters
Symbol
Value
Units
Conditions (Note 3)
Drain-to-Source Breakdown Voltage
BVDSS
100
V
VGS = 0V
ID = 1mA
Drain-to-Source On Resistance (TJ = 25°C)
RDS(ON)
7.4
mΩ
VGS = 7V, TJ = 25°C
ID = 25A
Drain-to-Source On Resistance (TJ = 150°C)
18.5
mΩ
VGS = 7V, TJ = 150°C
ID =25A
Gate Threshold Voltage
VGS(th)
1.6
V
VDS = VGS
ID = 2mA
Drain to Source Leakage Current (TJ = 25°C)
IDSS
0.5
µA
VDS = 100V
VGS = 0V, TJ = 25°C
Drain to Source Leakage Current (TJ = 150°C)
100
µA
VDS = 100V
VGS = 0V, TJ = 150°C
Gate to Source Current
IGDL
200
µA
VGS=7V, VDS=0V
Gate Resistance
RG
1.5
Ω
f=1MHz, open drain
Input Capacitance
CISS
345
pF
VDS = 80V
VGS = 0V
f = 1MHz
Output Capacitance
COSS
267
Reverse Transfer Capacitance
CRSS
24
Effective Output Capacitance, Energy Related (Note 4)
Co(er)
331
pF
VGS =0V
VDS=0 to 80V
Effective Output Capacitance, Time Related (Note 5)
Co(tr)
360
pF
ID =constant
VGS =0V
VDS=0 to 80V
Total Gate Charge
QG(TOT)
16
nC
VGS=0 to 7V
VDS=80V
ID=27A
Gate-to-Source Charge
QGS
3.0
nC
Gate-to -Drain Charge
QGD
7
nC
Reverse Recovery Charge
QRR
0
nC
Output Charge
QOSS
30
nC
Gate plateau voltage
Vplat
3.0
V
VDS = 80V
Source-Drain Reverse Voltage
VSD
2.8
V
VGS = 7V, TJ = 25°C
ISD =27A
Lead Inductance, Source
LS
0.2
nH
Lead Inductance, Drain
LD
0.2
Lead Inductance, Gate
LG
1.0
Lead Inductance, Source-Sense
LSS
1.0
(3) All parameters are specified with the substrate and thermal pad connected to the source
(4) Co(er) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0V to the stated VDS
(5) Co(tr) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0V to the stated VDS
GS61008P
100V enhancement mode GaN transistor
PRELIMINARY DATASHEET
Preliminary – Rev 150405
© 2009-2015 GaN Systems Inc.
3
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Package Dimensions
Recommended Minimum Footprint
Note: These pad sizes are the minimums recommended and should only be used as a guideline. Other factors, such as end-user layout,
specific application standards and thermal performance must be taken into consideration to define final footprints.
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Important Notice – Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed,
authorized or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may
result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of
performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of
intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein
is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or
implicitly, to any party any patent rights, licenses, or any other intellectual property rights. GaN Systems standard terms and conditions apply.
© 2009-2015 GaN Systems Inc. All rights reserved.
Pads plated with ENIG
immersion gold process
Pullback of 0.05mm on all sides for all pads
Typ. except as stated
