TPH7R006PL
1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH7R006PL
TPH7R006PL
TPH7R006PL
TPH7R006PL
Start of commercial production
2016-10
1.
1.
1.
1. Applications
Applications
Applications
Applications
High-Efficiency DC-DC Converters
Switching Voltage Regulators
Motor Drivers
2.
2.
2.
2. Features
Features
Features
Features
(1) High-speed switching
(2) Small gate charge: QSW = 6.2 nC (typ.)
(3) Small output charge: Qoss = 20 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 5.4 m (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
SOP Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
2016-11-21
Rev.1.0
©2016 Toshiba Corporation
TPH7R006PL
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
Single-pulse avalanche energy
Single-pulse avalanche current
Channel temperature
Storage temperature
(Tc = 25 )
(Silicon limit)
(t = 100 µs)
(Tc = 25 )
(Note 1)
(Note 1), (Note 2)
(Note 1)
(Note 3)
(Note 4)
(Note 5)
(Note 5)
Symbol
VDSS
VGSS
ID
ID
IDP
PD
PD
PD
EAS
IAS
Tch
Tstg
Rating
60
±20
60
79
180
81
3
0.96
14
60
175
-55 to 175
Unit
V
A
W
mJ
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
(Tc = 25 )
(Ta = 25 )
(Ta = 25 )
(Note 3)
(Note 4)
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a)
Max
1.83
50
156
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 175 .
Note 2: Limited by silicon chip capability.
Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 5: VDD = 48 V, Tch = 25 (initial), L = 3.1 µH, IAS =60 A
Fig.
Fig.
Fig.
Fig. 5.1
5.1
5.1
5.1 Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Board (a)
Board (a)
Board (a)
Board (a)
Fig.
Fig.
Fig.
Fig. 5.2
5.2
5.2
5.2 Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Board (b)
Board (b)
Board (b)
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2016-11-21
Rev.1.0
©2016 Toshiba Corporation
TPH7R006PL
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
(Note 6)
Symbol
IGSS
IDSS
V(BR)DSS
V(BR)DSX
Vth
RDS(ON)
Test Condition
VGS = ±20 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = -20 V
VDS = 10 V, ID = 0.2 mA
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 30 A
Min
60
45
1.5
Typ.
8.9
5.4
Max
±0.1
10
2.5
13.5
7.0
Unit
µA
V
m
Note 6: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
rg
tr
ton
tf
toff
Test Condition
VDS = 30 V, VGS = 0 V, f = 1 MHz
See Fig. 6.2.1
Min
Typ.
1440
35
300
0.8
5.6
11
4.5
19
Max
1875
70
1.3
Unit
pF
ns
VDD 30 V
VGS = 0 V/ 10 V
ID = 30 A
RL = 1.0
RGG = 4.7
RGS = 4.7
Duty 1 %, tw = 10 µs
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
6.3.
6.3.
6.3.
6.3. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Output charge
Symbol
Qg
Qgs1
Qgd
QSW
Qoss
Test Condition
VDD 30 V, VGS = 10 V, ID = 30 A
VDD 30 V, VGS = 4.5 V, ID = 30 A
VDD 30 V, VGS = 10 V, ID = 30 A
VDS = 30 V, VGS = 0 V, f = 1 MHz
Min
Typ.
22
11
6.9
3.0
6.2
20
Max
Unit
nC
2016-11-21
Rev.1.0
©2016 Toshiba Corporation
TPH7R006PL
4
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 7)
Symbol
IDRP
VDSF
trr
Qrr
Test Condition
(t = 100 µs)
IDR = 60 A, VGS = 0 V
IDR = 15 A, VGS = 0 V,
-dIDR/dt = 100 A/µs
Min
Typ.
32
28
Max
180
-1.2
Unit
A
V
ns
nC
Note 7: Ensure that the channel temperature does not exceed 175 .
7.
7.
7.
7. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
2016-11-21
Rev.1.0
©2016 Toshiba Corporation
TPH7R006PL
5
8.
8.
8.
8. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 I
I
I
ID
D
D
D - V
- V
- V
- VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 8.2
8.2
8.2
8.2 I
I
I
ID
D
D
D - V
- V
- V
- VDS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.3
8.3
8.3
8.3 I
I
I
ID
D
D
D - V
- V
- V
- VGS
GS
GS
GS Fig.
Fig.
Fig.
Fig. 8.4
8.4
8.4
8.4 V
V
V
VDS
DS
DS
DS - V
- V
- V
- VGS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.5
8.5
8.5
8.5 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - I
- I
- I
- ID
D
D
DFig.
Fig.
Fig.
Fig. 8.6
8.6
8.6
8.6 I
I
I
IDR
DR
DR
DR - V
- V
- V
- VDS
DS
DS
DS
2016-11-21
Rev.1.0
©2016 Toshiba Corporation
TPH7R006PL
6
Fig.
Fig.
Fig.
Fig. 8.7
8.7
8.7
8.7 V
V
V
V(BR)DSS
(BR)DSS
(BR)DSS
(BR)DSS - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 8.8
8.8
8.8
8.8 V
V
V
Vth
th
th
th - T
- T
- T
- Ta
a
a
a
Fig.
Fig.
Fig.
Fig. 8.9
8.9
8.9
8.9 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 8.10
8.10
8.10
8.10 Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Fig.
Fig.
Fig.
Fig. 8.11
8.11
8.11
8.11 Capacitance - V
Capacitance - V
Capacitance - V
Capacitance - VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 8.12
8.12
8.12
8.12 Q
Q
Q
Qoss
oss
oss
oss - V
- V
- V
- VDS
DS
DS
DS
2016-11-21
Rev.1.0
©2016 Toshiba Corporation
TPH7R006PL
7
Fig.
Fig.
Fig.
Fig. 8.13
8.13
8.13
8.13 r
r
r
rth
th
th
th - t
- t
- t
- tw
w
w
w
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
Fig.
Fig.
Fig.
Fig. 8.14
8.14
8.14
8.14 P
P
P
PD
D
D
D - T
- T
- T
- Ta
a
a
a
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
Fig.
Fig.
Fig.
Fig. 8.15
8.15
8.15
8.15 P
P
P
PD
D
D
D - T
- T
- T
- Tc
c
c
c
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
Fig.
Fig.
Fig.
Fig. 8.16
8.16
8.16
8.16 Safe Operating Area
Safe Operating Area
Safe Operating Area
Safe Operating Area
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2016-11-21
Rev.1.0
©2016 Toshiba Corporation
TPH7R006PL
8
Package Dimensions
Package Dimensions
Package Dimensions
Package Dimensions
Unit: mm
Weight: 0.069 g (typ.)
Package Name(s)
TOSHIBA: 2-5Q1S
Nickname: SOP Advance
2016-11-21
Rev.1.0
©2016 Toshiba Corporation
TPH7R006PL
9
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's
written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE").
("UNINTENDED USE").
("UNINTENDED USE").
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation,
equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles,
trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices,
elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR
IF YOU USE PRODUCT FOR
IF YOU USE PRODUCT FOR
IF YOU USE PRODUCT FOR
UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.
UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.
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ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,
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regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration
Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
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TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
2016-11-21
Rev.1.0
©2016 Toshiba Corporation