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©2009-2010 by RF Monolithics, Inc. XVT9003-1 3/15/10
Electrical Characteristics
Characteristic Sym Notes Minimum Typical Maximum Units
Nominal Frequency fo 19.200000 MHz
Component Storage Temperature Range -55 +125 °C
Storage Temperature Range in Tape and Reel -40 +85 °C
Soldering Profile, 10 seconds, up to 5 cycles 260 °C
Operating Temperature Range -40 +85 °C
Power Supply Volt age Vcc 3.14 3.30 3.46 V
Output Voltage with Load 10 pF||10 KΩVout 0.8 VP-P
Output Wav e fo rm clipped sinewave
Power Supply Current Icc 2.0 mA
Control Voltage Vcon 1.5±1.0 V
Control Voltage Input Impedance 100K ohms
Frequency Tolerance, Single Solder Reflow, Vcontrol = 1.50 V ±2.0 ppm max @ 25 °C ±2 °C
Frequency Stability versus:
Temperature, -40 to 85 °C ±1.0 ppm
Supply Voltage, 3.14 to 3.46 V ±0.2 ppm
Load 10 pF||10 KΩ ±10% ±0.2 ppm
Control Voltage Frequency Range (1.5 ±1.0 V) ±8 ppm/V
Start Up Time, 90% of final RF level in VP-P 2.0 ms
Aging @ 25 °C ±1 ppm/year
Harmonics -5.0 dBc
SSB Phase Noise @ 1 kHz Carrier Offset -130 dBc/Hz
Stanard Shipping Quantity on 180 mm (7”) Reel 1000 units
Lid Symbolization 9003-1/YWWS
SM3225-4 Case
• Voltage Controlled Temperature Compensated Crystal Oscillator
• Excellent Frequency Stability & Low Phase Noise
• 3.2 x 2.5 x 1.2 mm Surface-mount Case
• Complies with Directive 2002/95/EC (RoHS)
19.200000 MHz
VCTCXO
XVT9003-1
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1. The design, manufacturing process, and specifications of thi s device are subject to change without notice.
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Preliminary