VS-25TTS...SPbF Series
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Revision: 08-Jul-15 1Document Number: 94383
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Thyristor, Surface Mount, Phase Control SCR, 16 A
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-25TTS...SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Note
•T
A = 55 °C, TJ = 125 °C, footprint 300 mm2
PRODUCT SUMMARY
Package TO-263AB (D2PAK)
Diode variation Single SCR
IT(AV) 16 A
VDRM/VRRM 800 V, 1200 V
VTM 1.25 V
IGT 45 mA
TJ-40 to +125 °C
Gate
2, 4
Anode
Cathode
1
3
1
2
4
3
TO-263AB (D
2
PAK)
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper 3.5 5.5
A
Aluminum IMS, RthCA = 15 °C/W 8.5 13.5
Aluminum IMS with heatsink, RthCA = 5 °C/W 16.5 25.0
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 16 A
IRMS 25
VRRM/VDRM 800 to 1200 V
ITSM 350 A
VT16 A, TJ = 25 °C 1.25 V
dV/dt 500 V/μs
dI/dt 150 A/μs
TJ-40 to +125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM,
AT 125 °C
mA
VS-25TTS08SPbF 800 800 10
VS-25TTS12SPbF 1200 1200
VS-25TTS...SPbF Series
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Revision: 08-Jul-15 2Document Number: 94383
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum average on-state current IT(AV) TC = 93 °C, 180° conduction half sine wave 16
A
Maximum RMS on-state current IRMS 25
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied 300
10 ms sine pulse, no voltage reapplied 350
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 450 A2s
10 ms sine pulse, no voltage reapplied 630
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 6300 A2s
Maximum on-state voltage drop VTM 16 A, TJ = 25 °C 1.25 V
On-state slope resistance rtTJ = 125 °C 12.0 m
Threshold voltage VT(TO) 1.0 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.5
mA
TJ = 125 °C 10
Holding current IH
VS-25TTS08,
VS-25TTS12
Anode supply = 6 V,
resistive load, initial IT = 1 A,
TJ = 25 °C
- 150
Maximum latching current ILAnode supply = 6 V, resistive load, TJ = 25 °C 200
Maximum rate of rise of off-state voltage dV/dt TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open 500 V/μs
Maximum rate of rise of turned-on current dI/dt 150 A/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 60
mAAnode supply = 6 V, resistive load, TJ = 25 °C 45
Anode supply = 6 V, resistive load, TJ = 125 °C 20
Maximum required DC gate voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5
V
Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
μsTypical reverse recovery time trr TJ = 125 °C 4
Typical turn-off time tq110
VS-25TTS...SPbF Series
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Revision: 08-Jul-15 3Document Number: 94383
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Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -40 to +125 °C
Soldering temperature TSFor 10 s (1.6 mm from case) 260
Maximum thermal resistance,
junction to case RthJC DC operation 1.1
°C/W
Typical thermal resistance,
junction to ambient (PCB mount) RthJA (1) 40
Approximate weight 2g
0.07 oz.
Marking device Case style D2PAK (SMD-220) 25TTS08S
25TTS12S
90
100
110
120
130
0 5 10 15 20
30° 60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Cond uc tion Angle
Average On-state Current (A)
R (DC) = 1.1 °C/ W
thJC
80
90
100
110
120
130
0 5 10 15 20 25 30
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduc tion Period
R (DC) = 1.1 °C/W
thJC
0
5
10
15
20
25
048121620
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
T = 125°C
J
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
T = 125°C
J
VS-25TTS...SPbF Series
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Revision: 08-Jul-15 4Document Number: 94383
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
150
200
250
300
350
110100
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Pe a k Ha lf S
ine Wave On-sta te Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
100
150
200
250
300
350
400
0.01 0.1 1
Pe a k Ha lf S
ine Wave On-state Current (A)
Pulse Tra in Dura t io n ( s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduc tion Ma y Not Be Mainta ined.
Initia l T = 125°C
No Voltag e Rea p p lied
Ra te d V Reapp lied
RRM
J
1
10
100
1000
012345
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Si n g l e Pu l se
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
thJC
Transient Thermal Imp ed anc e Z (°C/W)
VS-25TTS...SPbF Series
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Revision: 08-Jul-15 5Document Number: 94383
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Fig. 9 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-25TTS08SPbF 50 1000 Antistatic plastic tubes
VS-25TTS08STRRPbF 800 800 13" diameter reel
VS-25TTS08STRLPbF 800 800 13" diameter reel
VS-25TTS12SPbF 50 1000 Antistatic plastic tubes
VS-25TTS12STRRPbF 800 800 13" diameter reel
VS-25TTS12STRLPbF 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
Instantaneous Gate Current (A)
Insta nta neous Ga te Volta ge (V)
TJ = 2 5 ° C
T
J = 125 °C
b)Recommended load line for
Frequency Limited by PG(AV)
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
TJ = - 1 0 ° C
IGD
VGD
<= 30% rated di/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, t p = 1 ms
(2) PGM = 20 W, t p = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
08 = 800 V
12 = 1200 V
-
1
- Vishay Semiconductors product
2
- Current rating (25 = 25 A)
3
- Circuit configuration:
4
- Package:
-PbF = lead (Pb)-free
5
6
- Voltage rating: voltage code x 100 = VRRM
T = single thyristor
- Type of silicon:
T = TO-220AC
S = standard recovery rectifier
9
7
- S = TO-220 D2PAK (SMD-220) version
8
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
Device code
5
132 4 6 7 8 9
VS- 25 T T S 12 S TRL PbF
Outline Dimensions
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Revision: 08-Jul-15 1Document Number: 95046
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D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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