MMBD4148 / SE / CC / CA
MMBD4148, Rev. C
Small Signal Diodes
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
MARKING
MMBD4148 5H MMBD4148CA D6
MMBD4148CC D5 MMBD4148SE D4
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
MMBD4148 / SE / CC / CA
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD Power Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Symbol
Parameter
Value
Units
VRRM Maximum Repetitive Reverse Voltage 100 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperature 150 °C
12
3
5H
3
1
2
SOT-23
Connection Diagrams
4148 4148SE
4148CC 4148CA
11
3
21
2
2
3
3
3
1
Symbol
Parameter Test Conditions Min
Max
Units
VR Breakdown Voltage IR = 5.0 µA
IR = 100 µA 75
100 V
V
VF Forward Voltage IF = 10 mA 1.0 V
IR Reverse Current VR = 20 V
VR = 20 V, TA = 150°C
VR = 75 V 25
50
5.0
nA
µA
µA
CT Total Capacitance VR = 0, f = 1.0 MHz 4.0 pF
trr Reverse Recovery Time IF = 10 mA, VR = 6.0 V,
IRR = 1.0 mA, RL = 100 4.0 ns
2NC
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Advance Information
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OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
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CROSSVOLT
DenseTrench™
DOME™
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E2CMOSTM
EnSignaTM
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™