FQA34N25 - Fairchild Semiconductor

October 2001

Rev. A, October 2001

FQA34N25

250V N-Ch anne l MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters and

switch mode power supplies.

Features

• 34A, 250V, RDS(on) = 0.085Ω @VGS = 10 V

• Low gate charge ( typical 60 nC)

• Low Crss ( typical 60 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQA34N25 Units

VDSS Drain-Source Voltage 250 V

IDDrain Current - Continuous (TC = 25°C) 34 A

- Continuous (TC = 100°C) 21.3 A

IDM Drain Current - Pulsed (Note 1) 136 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 700 mJ

IAR Avalanche Current (Note 1) 34 A

EAR Repetitive Avalanche Energy (Note 1) 24.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.8 V/ns

PDPower Dissipation (TC = 25°C) 245 W

- Derate above 25°C 1.96 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 0.51 °C/W

RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

TO-3P

FQA Series

GSD

Rev. A, October 2001

FQA34N25

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.97mH, IAS = 34A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 14A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit i ons Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA250 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.27 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 µA

VDS = 200 V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V , ID = 17 A -- 0.067 0.085 Ω

gFS Forward Transconductance VDS = 40 V, ID = 17 A -- 24 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 2110 2750 pF

Coss Output Capacitance -- 465 610 pF

Crss Reverse Transfer Capacitance -- 60 8 0 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 125 V, ID = 34 A,

RG = 25 Ω

-- 45 100 ns

trTurn-On Rise Time -- 335 680 ns

td(off) Turn-Off De l a y Time -- 110 230 n s

tfTurn -Off Fall Time -- 1 5 0 310 ns

QgTotal Gate Ch arge VDS = 200 V, ID = 34 A,

VGS = 10 V

-- 60 80 nC

Qgs Gate-Source Charge -- 14 -- nC

Qgd Gate-Drain Charge -- 36 -- nC

Drain-Sour ce Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 34 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 136 A

VSD Drain-Source Diode Forward V olt age VGS = 0 V, IS = 34 A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, I S = 34 A,

dIF / dt = 100 A/µs

-- 220 -- ns

Qrr Reverse Recovery Charge -- 1.9 - - µC

FQA34N25

0 20406080

VDS = 125V

VDS = 50V

VDS = 200V

$ Note : ID = 34 A

VGS, G ate-Source Voltage [V]

QG, T otal Ga te Char g e [n C]

10-1 100101

1000

2000

3000

4000

5000 Ciss = C gs + Cgd (C ds = shorted)

Coss = Cds + Cgd

Crss = Cgd

$ N o tes :

1. V GS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

101

102

150%

$ N o te s :

1. VGS = 0V

2. 250&s Pulse T est

25%

IDR, Reverse Drain Current [A]

VSD, So u rc e- D ra in v o ltag e [V ]

0 30 60 90 120 150 180

0.0

0.1

0.2

0.3

0.4

VGS = 20V

VGS = 10V

$ Note : TJ = 25%

RDS(ON) ['],

Drain-Source On-Resistance

ID, Drain Current [A]

246810

10-1

100

101

102

150%

25%

-55%

$ N o te s :

1. V DS = 50V

2. 250&s Pulse T est

ID, Drain C u rre n t [A ]

VGS, Gate-Source Voltage [V]

10-1 100101

100

101

102 VGS

T o p : 1 5 .0 V

1 0 .0 V

8 .0 V

7 .0 V

6 .5 V

6 .0 V

B o tto m : 5 .5 V

N o te s :

1 . 2 5 0 &s P u lse Te st

2 . T C = 25%

ID, D ra in Curr en t [A ]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics. Figure 6. Gate -Charge Characteristics.

Figure 3. On-Resistanc e Variation vs

Drain Current and Gate Voltage. Figure 4. Body Diode Fo rwa rd Voltage

Variation with Source Current

and Temperature.

Figure 2. Transfer Characteristics.Figure 1. On - Region Ch ar acterist ics.

FQA34N25

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

$ No te s :

1 . Z(JC(t) = 0.51 %/W M a x .

2 . D u ty Fa c to r , D= t1/t2

3 . TJM - T C = PDM * Z (JC(t)

single pu lse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z(JC

(t), T h erma l R e sp on se

t1, S q u a re W a ve P u lse Du ra tion [s ec ]

25 50 75 100 125 150

ID, D rain C urrent [A]

TC, Case Temperature [%

]

100101102

10-1

100

101

102

103

10 µs

DC 10 ms1 ms 100 µs

Operation in This Area

is Limited by R DS(on)

$ No tes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Cu rrent [A]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

$ Notes :

1. V GS = 10 V

2. ID = 17 A

RDS(ON) , (Norm alized)

Drain-Source On -Resistance

TJ, Junction Tem perature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :

1. V GS = 0 V

2. ID = 250 &A

BV DSS , (Norm alized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

Typical Characteristics (Continued)

Figure 9. Maxi m u m Sa fe Operating Area. Figur e 10. M ax imu m Dr ai n C ur re nt

vs Case Temperat ure.

Figu re 7. Brea kdown Voltage Variati on

vs Temperature. Figure 8. On-Resistance Variation

vs Temperature.

Figure 11. Transient The rm al Response C ur ve.

PDM

FQA34N25

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K)

200nF

12V

Same Type

as DUT

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K)

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FQA34N25

Peak Diode Recover y dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQA34N25

Package Dimensions

15.60 ±0.20 4.80 ±0.20

13.60 ±0.20

9.60 ±0.20

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20 1.40 ±0.20

ø3.20 ±0.10

3.80 ±0.20

13.90 ±0.20

3.50 ±0.20

16.50 ±0.30

12.76 ±0.20

19.90 ±0.20

23.40 ±0.20

18.70 ±0.20

1.50 +0.15

–0.05

0.60 +0.15

–0.05

5.45TYP

[5.45 ±0.30]5.45TYP

[5.45 ±0.30]

TO-3P

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Form ative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This dat asheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor .

The datasheet is printed for reference information only.

Rev. H4

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